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Unit 4

This document outlines various topics related to semiconductor devices, including the operation and characteristics of Zener diodes, p-n junction diodes, and rectifiers. It also covers the construction and principles of NPN and PNP transistors, differences between half wave and full wave rectifiers, and breakdown mechanisms. Additionally, it includes derivations for ripple factors of both half wave and full wave rectifiers.

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Ganta Druvath kumar
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9 views25 pages

Unit 4

This document outlines various topics related to semiconductor devices, including the operation and characteristics of Zener diodes, p-n junction diodes, and rectifiers. It also covers the construction and principles of NPN and PNP transistors, differences between half wave and full wave rectifiers, and breakdown mechanisms. Additionally, it includes derivations for ripple factors of both half wave and full wave rectifiers.

Uploaded by

Ganta Druvath kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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UNIT – 4

1. Illustrate the operation Zener diode and explain its V − I characteristics.


2. Draw the forward and reverse characteristics of a p-n junction diode and explain
them.
3. Explain the operation of Center-tapped full wave rectifier with relevant waveforms.
4. Explain the operation of Half Wave Rectifier with necessary waveforms
5. Explain the construction and principle of operation of NPN transistor with neat
diagram
6. Explain the construction and principle of operation of PNP transistor with neat diagram.
7. List out the differences between half wave and full wave rectifier.
8. Explain about Avalanche breakdown and zener breakdown.
9. Derive an expression for Ripple factor for half wave rectifier
10. Derive an expression for Ripple factor for full wave rectifier.

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