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TD4 Transistors 2024.Fr - en

The document contains exercises related to bipolar transistors, focusing on their operation in linear and saturation modes, and calculations involving base and collector currents. It includes specific circuit parameters and asks for the determination of resistor values and operating points for various configurations. Additionally, it discusses a Darlington transistor setup and requires calculations for its components.

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0% found this document useful (0 votes)
14 views2 pages

TD4 Transistors 2024.Fr - en

The document contains exercises related to bipolar transistors, focusing on their operation in linear and saturation modes, and calculations involving base and collector currents. It includes specific circuit parameters and asks for the determination of resistor values and operating points for various configurations. Additionally, it discusses a Darlington transistor setup and requires calculations for its components.

Uploaded by

Ramy Rk
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

Badji Mokhtar ANNABA University - Faculty of Technology December 2023

Department ST 2thYear License


Module: Fundamental Electronics 1

Series No. 04: Bipolar Transistors


Exercise 1
Consider the following circuit:
1.Determine the RB values that allow
the transistor to operate in linear mode (amplification).
RC
2.Determine the values of RB that allow the
RB IC
transistor to operate in saturation mode. E2
3. If RB = 25KΩ: IE
E1 VBE
a) Give the operating mode of the transistor.
b) Calculate IB, IC and VCE.
4. If RB=4 KΩ:
a) Give the operating mode of the transistor.
b) Calculate IB, IC and VCE.
E1=5V ; E2=24 V ; VCEsat=0.2V ; VBE=0.6 V ; RC=300Ω ; β=100.
Exercise 2
Let's take the following assembly: Vcc
1. We want to have a current IC of 100mA in the
RL VL
load RL. What value of resistance RB should we RB
IC
choose? IB
2. What is the maximum value that can be VCE
VBE
obtained for IC (Saturated Transistor)?
3. What is the minimum value of RB to
saturate the transistor?
The NPN transistor with static current gain β=100 and the voltage between the base and the emitter is
0.7 V. Vcc=12 V; RL=60Ω.
Exercise 3
We consider the following electronic assembly with a bipolar NPN transistor with a static
current gain of β=150 and the voltage between the base and the emitter is VBE=0.6V. The
assembly is powered by a voltage generator Vcc=12V base and emitter resistors
RE=750Ω, RB=100KΩ.
Determine the operating point of transistor VCE0and IC0.
RB IC
IB Vcc
IE
VBE
RE

1/2
BAD UniversityII MOKHTAR ANNABA - Faculty of Technology December 2023
Department ST 2thYear License
Module: Fundamental Electronics 1

Exercise 4
We consider a Darlington transistor composed of two NPN bipolar transistors whose Emitter
of 1ertransistor (B1,E1,C1) is connected to the base of the 2thtransistor (B2,E2,C2) . their static
gains are different: β1=100 ; β2=50 ; VB1E1=VB2E2=0.7V.
1. Determine IB1, IC1and VC1E1.
2. Determine IB2, IC2and VC2E2.
RC1
RB1=470kΩ ; RC1=4.7KΩ ; RC2=470Ω ;VCC=10V ;VBB=3V RC2
RB1 IC1
IB1 VCC
IE1 IC2
VBB IB2
VB1E1
IE2
VB2E2

Vcc

RB1 RC
C2
Rg C1 IC
IB
Ip RL Vs
eg See you
CE
RB2 RE

2/2

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