Design of Full Adder Circuits With Optimized Power and Speed Using CMOS Technique
Design of Full Adder Circuits With Optimized Power and Speed Using CMOS Technique
Abstract— Circuits for a 1-bit complete adder are Power reduction is very essential in VLSI circuit designing
proposed in this paper. The suggested circuits have very process, specially the reduction in power delay product (PDP)
low power consumption and minimal delay [1]. CMOS is very important for a good digital circuit and this can be
technology is used to develop various complete adder achieved by improving various parameters like width-to-
circuits with low power consumption and minimal delay. length (W/L) ratio. We always look for new designs while
Cadence Virtuoso at 90nm technology is used to designing VLSI (very larger scale technology) circuits
implement these, with a 1.8V supply voltage. The power because our main focus is to reduce area, power consumption
consumption [2], delay, and area parametric restrictions and delay, so that the performance of design will improve.
are compared with various complete adder circuit Although it is not possible to search any ideal design to
designs, and comments are made on which design achieve our targets and it is like never ending task. Our main
provides the best performance parameter. The Power focus is to maximize the performance while minimizing the
Delay Product indicates the circuit's efficiency. Since the resource consumption.
primary focus of VLSI research is low power design, One problem that we face is while designing VLSI circuits
create circuits with low power, little area, and little is that temperature of chips will increase as they work and
latency. The whole adder circuit design performance is hence cause more power consumption [1] this we can
related to the complete design performance. overcome with additional transistors. There are mainly two
types of power dissipation that is there in any circuit one is
Keywords— Full adder (FA), Cadence Virtuoso, Static power, static and another is dynamic. Static power dissipation [4], is
CMOS, Delay, Low Power, PDP, Dynamic power, PVT. there when transistor is off, the reverse current and
subthreshold current are the main causes of static power
Ⅰ. INTRODUCTION
dissipation. The source of power dissipation in the equation
Technology advancements have made circuit design more is as follows:
sophisticated, which means that designers are faced with
increasingly difficult VLSI difficulties, such as low power Pavg = Pleakage + PShort-circuit + Pswitching (1)
consumption [1], increased operating speed, and small space.
According to Moore's Law, the speed at which technology is Pswitching happens as a result of component switching. Short
developing has resulted in an exponential rise in the number circuit current is the cause of a short circuit. It results from
of transistors in VLSI circuits. VLSI engineers face difficult the simultaneous activation of NMOS and PMOS. This study
problems as a result of this expansion, including minimizing uses the Cadence Virtuoso tool to create two complete adder
chip space [2], increasing operating speed, and addressing circuits. The CMOS method at 90nm technology was used in
complicated issues like low power consumption. Designers the design of these adders. The traditional method of building
want to create more transistors per unit space while lowering a 1-bit complete adder circuit used 28 transistors, which
power consumption [3], since the number of transistors resulted in higher power dissipation, slower performance, and
doubles roughly every two years. a larger circuit footprint. Therefore, based on various
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A. 22T FULL ADDER: D. OUTPUT WAVEFORMS OF 22T:
In this design, a complete adder circuit is created at 90nm
technology using the CMOS process. 22 transistors total—11
NMOS and 11 PMOS—were utilized in this design. Two
additional NOT gates were needed during circuit design in
order to generate Abar, or the complement of A, and Cbar, or
the complement of C, which will be used as inputs in addition
to inputs A, B, and C. The XOR, XNOR, C, and Cbar signals
are utilized to form the output SUM signal. By using the Cbar
signal, we can minimize the capacitance at the nodes of XOR
and XNOR, which improves the driving capability of the
design and reduces power consumption [11, 12] and delay of
the circuit. We utilized XOR, XNOR, and C instead of Cbar
for the computation of CARRY [14]. A continuous supply of
1.8V was applied to the design during analysis. Fig. 6. 22T full adder output result and its waveforms
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TABLE I. SUM DELAYS FOR INPUT A, B AND, C.
C. Power consumption:
B. Delay:
VⅠ. CONCLUSION
The delay defines the speed of operation of circuits, if more
delay is there then speed will be less and if delay is less then A novel full adder has been designed for optimized power
speed will be more, the delay is mainly caused by the and high switching speed. The proposed full adder circuits
connecting wires and is known as transportation delay and the usage 22T and 14T, which shows better performance and
delay that is caused the change in output is known as inertial consumes very less power than conventional full adder
delay. Based on the latency of the total and carry from each circuits. The proposed circuits in this work has its own
input, Tables Nos. 2 and 3 compare several CMOS full adder advantage in terms of power consumption and delay. A 22T
circuits [18, 19]. full adder circuit have power reduction on 17.7% and in case
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of 14T power reduced by 21.49%. Additionally, the delay of [9] C. Venkatesan, S. M. Thabsera, M. G. Sumithra and M. Suriya,
"Analysis of 1- bit full adder using different techniques in Cadence
the circuit has been reduced by 12.41% and 9.06% for 22T 45nm Technology," 2019 5th International Conference on
and 14T respectively. Future work will involve designing Advanced Computing & Communication Systems (ICACCS),
whole adder circuits with varied widths and technologies. Coimbatore, India, 2019
The sensitivity of each suggested FA to PVT fluctuations is [10] P. Bhattacharyya, B. Kundu, S. Ghosh, V. Kumar, and A.
normal. Dandapat, “Performance analysis of a low-power high-speed
hybrid 1-bit full adder circuit,” IEEE Trans. Very Large Scale
Integr. (VLSI) Syst., vol. 23, no. 10, pp. 2001–2008, Oct. 2015.
REFERENCES
[11] M. Vesterbacka, “A 14-transistor CMOS full adder with full
voltageswing nodes,” in Proc. IEEE Workshop Signal Process.
[1] M. Rafiee, N. Shiri and A. Sadeghi, "High-Performance 1-Bit Full Syst. (SiPS), Oct. 1999, pp. 713–722.
Adder With Excellent Driving Capability for Multistage [12] A. M. Shams and M. A. Bayoumi, “A novel high-performance
Structures," in IEEE Embedded Systems Letters, vol. 14, no. 1, pp. CMOS 1-bit full-adder cell,” IEEE Trans. Circuits Syst. II, Analog
47-50, March 2022. Digit. Signal Process., vol. 47, no. 5, pp. 478–481, May 2000.
[2] Gulafshan, M. A. Khan and M. Hasan, "Design of High Speed, [13] M. Aguirre-Hernandez and M. Linares-Aranda, “CMOS full-
Energy, and Area Efficient Spin-Based Hybrid MTJ/CMOS and adders for energy-efficient arithmetic applications,” IEEE Trans.
CMOS Only Approximate Adders," in IEEE Transactions on Very Large Scale Integr. (VLSI) Syst., vol. 19, no. 4, pp. 718–721,
Magnetics, vol. 58, no. 5, pp. 1-8, May 2022 Apr. 2011.
[3] A. K. Yadav, B. P. Shrivatava and A. K. Dadoriya, "Low power [14] Shrikant M Patar and Ravish Aradhya H V, “Novel low power and
high speed 1-bit full adder circuit design at 45nm CMOS High speed 8T full adder,” in International Journal of Scientific
technology," 2017 International Conference on Recent and Engineering Research, vol.4, Aug. 2016, pp. 1156–1160.
Innovations in Signal processing and Embedded Systems (RISE),
Bhopal, India, 2017, pp. 427-432. [15] Ms. Asha K A and Mr. Kunjan, Shinde D, “Analysis, Design and
Implementation of full adder for systolic array based
[4] A. P. Singh, R. K. Baghel and S. Tirkey, "Enhanced low architectures,” in IOSR Journal of VLSI and Signal Processing,
dimensional MOSFETs with variation of high K dielectric vol.6, May-Jun. 2016 , pp. 73–77.
materials," 2023 IEEE International Students' Conference on
Electrical, Electronics and Computer Science (SCEECS), [16] A.P. Singh, R.K. Baghel, S. Tirkey, and B.S. Choudhary,
Bhopal, India, 2023, pp. 1-5, doi: "Modeling Approaches to Field-Effect Transistors," in
10.1109/SCEECS57921.2023.10062976 Advanced Field-Effect Transistors, CRC Press, 2023, pp. 46-
73.
[5] A. BAGWARI and I. KATNA, "Low Power Ripple Carry Adder
Using Hybrid 1-Bit Full Adder Circuit," 2019 11th International [17] Dhanunjaya K, Dr. Giri Prasad MN, Dr. Padmaraju K,
Conference on Computational Intelligence and Communication “Performance analysis of low power full adder cells using 45nm
Networks (CICN), Honolulu, HI, USA, 2019, pp. 124-127. CMOS technology,” in International Journal o f Microelectronics
Engineering ( IJ M E ) , vol.1, 2015 , pp. 35–49
[6] Partha Bhattacharyya, Bijoy Kundu, Sovan Ghosh, Vinay Kumar,
Anup Dandapat, “Performance Analysis of a Low-Power High [18] B. K. Mohanty, “Efficient fixed-width adder-tree design,” IEEE
Speed Hybrid 1-bit Full Adder Circuit”, IEEETransactions on Trans. Circuits Syst. II, Exp. Briefs, vol. 66, no. 2, pp. 292–296,
Very Large Scale Integration (VLSI) Systems, 2014.pp. 1-8 Feb. 2019.
[19] S. Purohit and M. Margala, “Investigating the impact of logic and
[7] Senthil Kumaran Vardharajan and Viswanathan Nallasamy, “Low
Power VLSI Circuits Design Strategies and Methodologies: A circuit implementation on full adder performance,” IEEE Trans.
Literature Review”, IEEE Conference on Emerging Devices and Very Large Scale Integr. (VLSI) Syst., vol. 20, no. 7, pp. 1327–
Smart Systems, 2017, pp. 245-251. 1331, Jul. 2012.
[8] V. Thenmozhi, Mr.R.Muthaiah, “Optimized Low Power Full
Adder Design”, International Conference on Networks &
Advances in Computational Technologies, July 2017, pp. 86-89.
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