Emc-Optimized High Speed Can Transceiver: Features Applications
Emc-Optimized High Speed Can Transceiver: Features Applications
1FEATURES APPLICATIONS
• Qualified for Automotive Applications • GMW3122 Dual-Wire CAN Physical Layer
• Meets or Exceeds the Requirements of • SAE J2284 High-Speed CAN for Automotive
ISO 11898-2 and -5 Applications
• GIFT/ICT Compliant • SAE J1939 Standard Data Bus Interface
• ISO 11783 Standard Data Bus Interface
• ESD Protection up to ±12 kV (Human-Body
Model) on Bus Pins • NMEA 2000 Standard Data Bus Interface
• Low-Current Standby Mode With Bus
DESCRIPTION
Wake-Up, <12 µA Max
• High Electromagnetic Compliance (EMC) The SN65HVDA1040A meets or exceeds the
specifications of the ISO 11898 standard for use in
• SPLIT Voltage Source for Common-Mode applications employing a Controller Area Network
Stabilization of Bus Via Split Termination (CAN). The device is qualified for use in automotive
• Digital Inputs Compatible with 3.3V and 5V applications. As a CAN transceiver, this device
Microprocessors provides differential transmit capability to the bus and
• Package Options: SOIC and VSON differential receive capability to a CAN controller at
signaling rates up to 1 megabit per second (Mbps) (1) .
• Protection Features
– Bus-Fault Protection of –27 V to 40 V
– TXD Dominant Time-Out
– Thermal Shutdown Protection
– Power-Up/Down Glitch-Free Bus Inputs and
Outputs
– High Bus Input Impedance With Low VCC
(1) The signaling rate of a line is the number of voltage
(Ideal Passive Behavior on Bus When transitions that are made per second, expressed in the units
Unpowered) bps (bits per second).
1 Input
TXD Logic Driver
VCC
7 CANH
6
8 Standby Mode CANL
STB
4 Output
RXD MUX
Logic
Wake-Up
Filter
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. © 2010–2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SN65HVDA1040A-Q1
SLLS995C – FEBRUARY 2010 – REVISED FEBRUARY 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DESCRIPTION (CONTINUED)
The device is designed for operation in especially harsh environments and includes many device protection
features such as undervoltage lock out, over temperature thermal shutdown, wide common-mode range and loss
of ground protection. The bus pins are also protected against external cross-wiring, shorts to -27 V to 40 V and
voltage transients according to ISO 7637.
TXD 1 8 STB
TXD STB
GND CANH
GND 2 7 CANH
VCC CANL
RXD SPLIT
VCC 3 6 CANL
NC NC
NC NC
RXD 4 5 SPLIT
TERMINAL FUNCTIONS
TERMINAL
SOIC VSON TYPE DESCRIPTION
NAME
NO. NO.
TXD 1 1 I CAN transmit data input (low for dominant bus state, high for recessive bus state)
GND 2 2 GND Ground connection
VCC 3 3 Supply Transceiver 5V supply voltage input
RXD 4 4 O CAN receive data output (low in dominant bus state, high in recessive bus state)
SPLIT 5 9 O Common mode stabilization output
CANL 6 10 I/O LOW-level CAN bus line
CANH 7 11 I/O HIGH-level CAN bus line
STB 8 12 I Standby mode select pin (active high)
NC NA 5, 6, 7, 8 NC No connect
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
FUNCTIONAL DESCRIPTION
Operating Modes
The device has two main operating modes: normal mode and standby mode. Operating mode selection is made
via the STB input pin.
CANH
Normal & Silent Mode Low Power
Standby Mode VCC/2 A
Typical Bus Voltage
RXD
CANH B
CANL
Vdiff
Vdiff
CANL A: Normal Mode
B: Low Power Standby Mode
Figure 1. Bus States (Physical Bit Representation) Figure 2. Simplified Common Mode Bias and
Receiver Implementation
Normal Mode
This is the normal operating mode of the device. It is selected by setting STB low. The CAN driver and receiver
are fully operational and CAN communication is bi-directional. The driver is translating a digital input on TXD to a
differential output on CANH and CANL. The receiver is translating the differential signal from CANH and CANL to
a digital output on RXD. In recessive state the bus pins are biased to 0.5 × VCC. In dominant state the bus pins
(CANH and CANL) are driven differentially apart. Logic high is equivalent to recessive on the bus and logic low is
equivalent to a dominant (differential) signal on the bus.
The SPLIT pin is biased to 0.5 × VCC for bus common mode bus voltage bias stabilization in split termination
network applications (see application information).
Bus VDiff
RXD
Figure 3. Standby Mode Low Power Receiver and Bus Monitor Behavior
(1) H = high level, L = low level, X = irrelevant, Y = weak pull down to GND, ? = indeterminate, Z = high
impedance
Protection Features
Thermal Shutdown
If the junction temperature of the device exceeds the thermal shut down threshold the device will turn off the
CAN driver circuits, including SPLIT pin. This condition is cleared once the temperature drops below the thermal
shut down temperature of the device.
Application Hints
SN65HVDA1040A 3
CANH
7
CANL
6
2
GND
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) Tested in accordance with ISO 7637 test pulses 1, 2, 3a, 3b per IBEE system level test (Pulse 1 = –100 V, Pulse 2 = 100 V, Pulse
3a = –150 V, Pulse 3b = 100 V). If dc may be coupled with ac transients, externally protect the bus pins within the absolute maximum
voltage range at any bus terminal. This device has been tested with dc bus shorts to +40 V with leading common-mode chokes. If
common-mode chokes are used in the system and the bus lines may be shorted to dc, ensure that the choke type and value in
combination with the node termination and shorting voltage either will not create inductive flyback outside of voltage maximum
specification or use an external transient-suppression circuit to protect the transceiver from the inductive transients.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions including operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
Supply
4.1 Standby mode STB at VCC, VI = VCC 6 12 µA
4.2 ICC 5-V supply current Dominant VI = 0 V, 60-Ω load, STB at 0 V 50 70
mA
4.3 Recessive VI = VCC, No load, STB at 0 V 6 10
4.4 UVVCC Undervoltage reset threshold 2.8 4.0 V
Device Switching Characteristics
Total loop delay, driver input to receiver output,
5.1 td(LOOP1) STB at 0 V, See Figure 12 90 230 ns
recessive to dominant
Total loop delay, driver input to receiver output,
5.2 td(LOOP2) STB at 0 V, See Figure 12 90 230 ns
dominant to recessive
Driver
6.1 Bus output voltage CANH VI = 0 V, STB at 0 V, RL = 60 Ω, 2.9 3.4 4.5
VO(D) V
6.2 (dominant) CANL See Figure 5 and Figure 1 0.8 1.75
VI = 3 V, STB at 0 V, RL = 60 Ω,
6.3 VO(R) Bus output voltage (recessive) 2 2.5 3 V
See Figure 5 and Figure 1
STB at Vcc, RL = 60 Ω,
6.4 VO Bus output voltage (standby mode) –0.1 0.1 V
See Figure 5 and Figure 1
VI = 0 V, RL = 60 Ω, STB at 0 V,
6.5 1.5 3 V
See Figure 5, Figure 1, and Figure 6
VOD(D) Differential output voltage (dominant)
VI = 0 V, RL = 45 Ω, STB at 0 V,
6.6 1.4 3
See Figure 5, Figure 1, and Figure 6
VI = 3 V, STB at 0 V, RL = 60 Ω,
6.7 –0.012 0.012 V
VOD(R) Differential output voltage (recessive) See Figure 5 and Figure 1
6.8 VI = 3 V, STB at 0 V, No load –0.5 0.05
Output symmetry (dominant or recessive)
6.9 VSYM STB at 0 V, RL = 60 Ω, See Figure 16 0.9 VCC VCC 1.1 VCC V
(VO(CANH) + VO(CANL))
6.10 VOC(ss) Steady-state common-mode output voltage STB at 0 V, RL = 60 Ω, See Figure 11 2 2.5 3 V
Change in steady-state common-mode output
6.11 ΔVOC(ss) STB at 0 V, RL = 60 Ω, See Figure 11 30 mV
voltage
6.12 VIH High-level input voltage, TXD input 2 V
6.13 VIL Low-level input voltage, TXD input 0.8 V
6.14 IIH High-level input current, TXD input VI at VCC –2 2 µA
6.15 IIL Low-level input current, TXD input VI at 0 V –50 –10 µA
6.16 IO(off) Power-off TXD output current VCC at 0 V, TXD at 5 V 1 µA
VCANH = –12 V, CANL open, TXD = low,
6.17 –120 –85
See Figure 14
VCANH = 12 V, CANL open, TXD = low,
6.18 0.4 1
See Figure 14
VCANL = –12 V, CANH open, TXD = low,
6.19 –1 –0.6
Short-circuit steady-state output current, See Figure 14
IOS(ss) mA
Dominant VCANL = 12 V, CANH open, TXD = low,
6.20 75 120
See Figure 14
VCANH = 0 V, CANL open, TXD = low,
6.21 -100 -75
See Figure 14
VCANL = 32 V, CANH open, , TXD = low,
6.22 75 125
See Figure 14
-20 V ≤ VCANH ≤ 32 V, CANL open,
6.23 -10 10
Short-circuit steady-state output current, TXD = high, See Figure 14
IOS(ss) mA
Recessive -20 V ≤ VCANL ≤ 32 V, CANH open,
6.24 -10 10
TXD = high, See Figure 14
6.25 CO Output capacitance See receiver input capacitance
(2) The TXD dominant time out (t(dom)) disables the driver of the transceiver once the TXD has been dominant longer than t(dom), which
releases the bus lines to recessive, preventing a local failure from locking the bus dominant. The driver may only transmit dominant
again after TXD has been returned HIGH (recessive). While this protects the bus from local faults, locking the bus dominant, it limits the
minimum data rate possible. The CAN protocol allows a maximum of eleven successive dominant bits (on TXD) for the worst case,
where five successive dominant bits are followed immediately by an error frame. This, along with the t(dom) minimum, limits the minimum
bit rate. The minimum bit rate may be calculated by:
Minimum Bit Rate = 11/ t(dom) = 11 bits / 300 µs = 37 kbps
THERMAL CHARACTERISTICS
over recommended operating conditions, TA = –40°C to 125°C (unless otherwise noted)
THERMAL METRIC (1) TEST CONDITIONS MIN TYP MAX UNIT
THERMAL METRIC - SOIC 'D' PACKAGE
12.1-D Junction-to-air thermal Low-K thermal resistance (3) 140
θJA
12.2-D resistance (2) High-K thermal resistance (4) 112
Junction-to-board thermal
12.3-D θJB 50
resistance (5)
Junction-to-case (top) thermal
12.4-D θJC(TOP) 56
resistance (6)
°C/W
Junction-to-case (bottom)
12.5-D θJC(BOTTOM) NA
thermal resistance (7)
Junction-to-top
12.6-D ΨJT 13
characterization parameter (8)
Junction-to-board
12.7-D ΨJB 55
characterization parameter (9)
THERMAL METRIC - VSON 'DSJ' PACKAGE
12.1-DSJ Junction-to-air thermal Low-K thermal resistance (3) 290
θJA
12.2-DSJ resistance (2) High-K thermal resistance (4)
52
Junction-to-board thermal
12.3-DSJ θJB 14
resistance (5)
Junction-to-case (top) thermal
12.4-DSJ θJC(TOP) 56
resistance (6)
°C/W
Junction-to-case (bottom)
12.5-DSJ θJC(BOTTOM) 4.5
thermal resistance (7)
Junction-to-top
12.6-DSJ ΨJT 6
characterization parameter (8)
Junction-to-board
12.7-DSJ ΨJB 19
characterization parameter (9)
AVERAGE POWER DISSIPATION AND THERMAL SHUTDOWN
VCC = 5 V, TJ = 27°C, RL = 60 Ω, STB at 0 V,
12.5 Input to TXD at 500 kHz, 50% duty cycle 112
square wave, CL at RXD = 15 pF
PD Average power dissipation VCC = 5.5 V, TJ = 130°C, RL = 45 Ω, STB at mW
0 V,
12.6 170
Input to TXD at 500 kHz, 50% duty cycle
square wave, CL at RXD = 15 pF
Thermal shutdown
12.7 185 °C
temperature
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction temperature (TJ) is calculated using the following TJ = TA + (PD × θJA). θJAis PCB dependent, both JEDEC-standard Low-K
and High-K values are given as reference points to standardized reference boards.
(3) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, Low-K board, as
specified in JESD51-3, in an environment described in JESD51-2a.
(4) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(5) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(6) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(8) The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(9) The junction-to-board characterization parameter, ΨJB estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
TXD VO (CANH)
II RL
VOD
VO(CANH) + VO(CANL)
2
STB I I(S)
VI VOC
+ I O(CANL)
VI(S) V O(CANL)
_
330 W ±1%
CANH
TXD
0V VOD RL
+
_ –2 V £ VTEST £ 7 V
STB
CANL
330 W ±1%
CANH
VCC
VI
VCC/2 VCC/2
TXD 0V
RL = 60 W VO
±1% tPLH tPHL
CL = 100 pF VO(D)
VI 90%
0.9 V
VO 0.5 V
STB 10%
VO(R)
CANL tr tf
CANH
VI (CANH) RXD
IO
VID
V + VI (CANL)
VIC = I (CANH)
2
VO
VI (CANL) CANL
CANH 3.5 V
VI 2V 2.4 V
RXD IO
VI 1.5 V
tPLH tPHL
CANL VOH
(See Note A) 1.5 V CL = 15 pF ±20% 90% 0.75 VCC
VO
STB (See Note B) VO 0.25 VCC
10% VOL
tr tf
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle,
tr ≤ 6 ns, tf ≤ 6 ns, ZO = 50 Ω.
B. CL includes instrumentation and fixture capacitance within ±20%.
DUT
CANH VCC
(B)
TXD (A) 60 W VI 0.5 VCC
0V CL
±1% 0V
STB CANL
VI VOH
VO 0.5 VCC
RXD VOL
ten
+
VO
_ 15 pF ± 20%
CANH
TXD
VI RL VO(CANH) + VO(CANL) VOC(SS)
VOC =
2
VOC
STB CANL VO(CANH)
VO(CANL)
NOTE: All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns,
pulse repetition rate (PRR) = 125 kHz, 50% duty cycle.
DUT
CANH VCC
TXD Input 0.5 VCC
(B) TXD 60 W
VI CL
(A)
0V
±1%
tloop2 tloop1
VO
_ 15 pF ±20%
CANH
VCC
VI
TXD
RL = 60 W CL
(B)
VOD 0V
±1%
VOD(D)
VI (A)
VOD
900 mV
STB 500 mV
CANL 0V
tdom
A. All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns,
pulse repetition rate (PRR) = 500 Hz, 50% duty cycle.
B. CL = 100 pF includes instrumentation and fixture capacitance within ±20%.
VCC 3.5 V
CANH
STB VI 2.65 V
IO
VI RXD
1.5 V
(see Note A) 0.7 µs tBUS
CANL CL
1.5 V VO VOH
(see Note B)
VO 400 mV
VOL
A. For VI bit width ≤ 0.7 µs, VO = VOH. For VI bit width ≥ 5 µs, VO = VOL. VI input pulses are supplied from a generator
with the following characteristics: tr/tf < 6 ns.
B. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
CANH
TXD
VI RL
VSYM = VO(CANH) + VO(CANL)
A. All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr/tf ≤ 6 ns,
pulse repetition rate (PRR) = 250 kHz, 50% duty cycle.
4.3 kW 15 W
Input Output
6V 6V
10 kW 10 kW
20 kW 20 kW
Input Input
10 kW 10 kW
40 V
40 V
CANH
4.3 kW
Input CANL
6V 40 V 40 V
SPLIT Output
VCC
2 kW
Output
2 kW
40 V
APPLICATION INFORMATION
VBATTERY
VSUP VCC
VCC
Vreg
VCC 3 CANH
(e.g., TPSxxxx) 7
STB
Port x 8
SN65HVDA1040A
CAN Transceiver
MCU SPLIT
(e.g., TMS470) 5
RXD
RXD 4
TXD CANL
TXD 1 6
2
GND
www.ti.com 9-Feb-2011
PACKAGING INFORMATION
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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