Scribd
Upload
65 views1 page

Basic Electronics May 2024

This document outlines the examination structure for the Basic Electronics course for III B. Tech I Semester students, detailing the units and questions to be answered. Students are required to answer five questions, one from each unit, covering topics such as pn junction diodes, transistors, FETs, and SCRs. The exam is scheduled for May/June 2024, with a duration of 3 hours and a maximum score of 70 marks.

Uploaded by

kawidi4334
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
65 views1 page

Basic Electronics May 2024

This document outlines the examination structure for the Basic Electronics course for III B. Tech I Semester students, detailing the units and questions to be answered. Students are required to answer five questions, one from each unit, covering topics such as pn junction diodes, transistors, FETs, and SCRs. The exam is scheduled for May/June 2024, with a duration of 3 hours and a maximum score of 70 marks.

Uploaded by

kawidi4334
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Code No: R203104O R20 SET - 1

III B. Tech I Semester Supplementary Examinations, May/June -2024


BASIC ELECTRONICS
(Com to EEE,ME,CSE,IT,CSE(AI),CSE(AIML),CSE(CS),CSE(IOT),CSE(DS),AIML,AIDS,CS)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions ONE Question from Each unit
All Questions Carry Equal Marks
*****
UNIT-I
1. a) Explain the formation of the depletion layer in a pn junction diode. [6M]
b) Write the block diagram of a complete power supply and describe the function [8M]
of each block.
(OR)
2. a) Explain the conduction of current through a pn junction diode [7M]
under forward and reverse bias conditions
b) Draw the block diagram of series voltage regulator and explain its operation. [7M]
UNIT-II
3. a) Briefly explain about avalanche and zener breakdown. [7M]
b) What is the optical diode? What are the different types of optical diodes? [7M]
Explain any one.
(OR)
4. a) Explain the characteristics of zener diode. [7M]
b) Explain the characteristics and applications of varactor diode. [7M]
UNIT-III
5. a) Draw and explain the input and output characteristics of a transistor in CB [7M]
configuration.
b) Describe how switching achieved by a BJT. [7M]
(OR)
6. a) Explain the working of NPN transistor. [7M]
b) What are the bias conditions of base-emitter and base-collector junction to [7M]
operate a transistor in cut off region? Explain.
UNIT-IV
7. a) Explain with the help of neat diagrams, the structure of an N-channel FET and [9M]
its Volt-ampere characteristics.
b) Compare N-with P-channel MOSFETS. [5M]
(OR)
8. a) Define and explain the three parameters of a JFET give the relation between [9M]
them.
b) Draw output and transfer characteristics of MOSFET and explain the terms (i) [5M]
pinch off voltage (ii) threshold voltage and (iii) trans-conductance.
UNIT-V
9. a) Sketch static V-I characteristics of IGBT and mark the region in which the [7M]
device is operated as a switch.
b) Discuss the applications of SCR. [7M]
(OR)
10. a) Give the constructional details of SCR with the help of schematic diagram and [7M]
circuit symbol.
b) Write about optical couplers. [7M]
1 of 1
|''|''|||''|'''|||'|

You might also like