Department of Electrical Engineering

Indian Institute of Technology, Kanpur

EE 210 MID-SEM P1 24.2.21

The fab line data for an n-channel MOSFET: NA = 1016 cm3, tox = 30 nm, VTN0 = 0.7 V, n = 430 cm2/V-
sec, and (, Cgs0, Cgd0) → 0. Other relevant data: VT = 26 mV, 0 = 8.854  1014 F/cm, r(Si) = 11.7,
r(SiO2) = 3.9, q = 1.6  1019 C, ni = 1.5  1010 cm3.
a) Design the values (in m) of W and L, such that with the device biased in saturation with the lowest
allowed values of the gate overdrive voltage and the corresponding VDS, it should have unity-gain
cutoff frequency (fT) of 5 GHz and device power dissipation of 100 nW. 8
b) If the designed device is biased with VG = 3 V, VD = 1.5 V, VS = 1 V, and VB = 0 V, determine the
drain current ID. 4
c) If the values of VG and VS are maintained as in part b), but now VD is changed to 3 V, determine the
required value of VB that will make the device operate with a body factor () of 0.1. 3
 Department of Electrical Engineering
Indian Institute of Technology, Kanpur

EE 210 MID-SEM P2 24.2.21

VCC
All BJTs in the circuit shown are identical with (, VA) →  [for parts V0
a)-d)]. I1
R1
a) Show that I0 is a function only of VCC and RE, if R1 = R2. 4 R0
I0
b) If I0 = I1, how is RE related to R1 (or R2, since R1 = R2)? 2
c) If VCC = 5 V, determine R1 (= R2) and RE to give I0 = 1 mA. 2
d) What is V0,min? Is the value acceptable to you? Comment. 2 Q1 Q3
e) Only for this part, assuming  = 100, VA = 100 V, I0 and I1 remain at
1 mA, and using the values of R1 (= R2) and RE calculated in part c),
estimate the output resistance R0. 5 Q2
RE

R2
 Department of Electrical Engineering
Indian Institute of Technology, Kanpur

EE 210 MID-SEM P3 24.2.21

VDD
In the BiMOS (combination of BJT and MOS) cascode current source
5V
shown in the figure, M1-M2 is a perfectly matched pair, and so is Q3-Q4. V0
Neglect DC base current, and assume that VDS  1. R0
IREF
Data: for M1-M2: VTN0 = 0.7 V, k N = 40 A/V2,  = 0.4 V1/2, 2F = 0.6 V; R
I0
for Q3-Q4:  = 100, VA = 100 V.
a) Show that R0  r04. Clearly highlight all the assumptions made in
arriving at this result. 5 Q3 Q4
b) Choose the values of IREF, R, and (W/L) of M1-M2, in order to have
R0 and V0,min of 1 G and 1 V respectively. 7
c) What is the most critical parameter and what should be its value for
the assumption made in the derivation of R0 [part a)] to hold? An M1 M2
error band of 5% is acceptable. 3
 Department of Electrical Engineering
Indian Institute of Technology, Kanpur

EE 210 MID-SEM P4 24.2.21

VCC
A DC reference voltage (VREF) generator circuit is shown in the figure. For Q, 5V
assume  = 100, and neglect Early effect. The DC current source IREF is ideal. IREF
a) Choosing the base current of Q to be 20% of the current flowing through R1, 2.1 mA
VREF
design the values of R1 and R2 to produce VREF = 2 V. Caution: Do not use
equations blindly. 5
b) Quantitatively prove that the DC power of the circuit is a conserved quantity, R1
i.e., the DC power supplied by VCC is completely dissipated in the circuit. 4 R0
c) What is the output resistance (R0) of the designed voltage reference? Is it Q
acceptable? Why or why not? 6
R2