NAME:______________________________________ PUID:______________________________________

Semiconductor Fundamentals

Practice Exam 2: Units 3 - 5

Mark Lundstrom
Purdue University, Spring 2021

This is a closed book exam. You may use the formula sheet provided at the beginning of
the answer sheet. A calculator is required:

Purdue on-campus students: Following the Purdue University ECE policy, the
calculator must be a Texas Instruments TI-30X IIS scientific calculator.

Purdue/edX students: Only the online edX calculator may be used. It is located on
the lower right corner of the screen.

The first question is multiple choice. Clearly mark the best answer on the answer
sheet.

To receive credit (and partial credit) for the other problems, you must show your work
on the answer sheet. Most questions require two answers: 1) a mathematical
expression and 2) a numerical answer. Be sure to draw a box around your final two
answers.

You will have 50 minutes to complete the exam.

Be sure to fill in your name and Purdue student ID at the top of the answer sheet.

100 total points possible

Q1: 20 points (10 multiple choice questions – 2 points per part)

Q2 – Q9: 10 points per question

Any student found to have cheated on this exam will receive a grade of F on the
exam and will fail the entire course.

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 Semiconductor Fundamentals: Key Equations for Exam 2
Mark Lundstrom, Purdue University
Spring 2021

Physical constants: Silicon parameters (T = 300 K);

k BT q = 0.026 eV
 = 1.055 × 10 −34 [ J-s ] N C = 3.23× 1019 cm -3
m0 = 9.109 × 10 −31 [ kg ] NV = 1.83× 1019 cm -3
kB = 1.380 × 10 −23 [ J/K ] ni = 1× 1010 cm -3
q = 1.602 × 10 −19 [ C ] EG = 1.125 eV
ε 0 = 8.854 × 10−12 [F/m] K S = 11.8

Miller Indices: (hkl) {hkl} [hkl] <hkl>

h1h2 + k1k2 + l1l2
Angle between two planes: cosθ =
h + k12 + l12 h22 + k22 + l22
2
1
!
Spacing between two planes: d =1 N = a h2 + k 2 + l 2

Quantum mechanics:
( )
Wave function: Ψ x,t = ψ x e− iω t ()
−! 2 d ψ ( x )
2

Time independent wave eq.: + U ( x )ψ ( x ) = Eψ ( x )

2m0 dx 2

d 2ψ ( x ) 2m0
(E −U ) > 0 :
0
dx 2
+ k 2ψ ( x ) = 0 k2 = ⎡ E − U 0 ⎤⎦
!2 ⎣
ψ ( x ) = Ae± ikx

d ψ ( x)
2
2m
(E −U ) < 0 :
0
dx 2
− α 2ψ ( x ) = 0 α 2 = 2 0 ⎡⎣U 0 − E ⎤⎦
!
ψ ( x ) = Ae±α x

Infinite quantum well of width, W:

! 2 k 2j ! 2 j 2π 2 2 π
εj = *
= * 2 j = 1, 2, 3, … ψ (x) = sin k j x kj = j j = 1,2, 3...
2m 2m W W W
Plane wave: Y ( x, t ) = ei( kx -wt ) Momentum of plane wave: p = !k
Uncertainty relations: ΔpΔx ≥ ! 2 ΔEΔt ≥ ! 2
Group velocity: υ g = dω dk = (1 ! ) dE dk

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 Key equations (continued)

Density of states in k-space:

( )
1D: N k dk= 2 × L 2π dk = L π dk ( )
⎣ ⎦
2
(
2D: N k d 2 k = 2 × ⎡⎢ A ( 2π ) ⎤⎥ d 2 k = A 2π 2 d 2 k )
( )
3D: N k d 3k=2 × Ω 8π 3 d 3k = Ω 4π 3 d 3k ( )
Density of states in energy (above the bottom of a parabolic conduction band):

(m ) 2 ( E − EC )
3/2
*
1 2m*D m*D
1D: D1D (E) =
π! E − EC
2D: D2 D (E) = 2
π!
3D: D3D ( E) = D

π 2!3

Fermi function: You should know the Fermi function

Equilibrium Carrier densities (3D):

You should know how the equilibrium carrier densities depend on the Fermi level.

2
+ − N ⎛N ⎞
Space charge neutrality: p−n+ N − N = 0 n0 = D + ⎜ D ⎟ + ni2
D A
2 ⎝ 2 ⎠
N D+ 1 N A− 1
= =
N D 1+ gD e EF −ED ) kBT
( N A 1+ gA e EA −EF ) kBT
(

Recombination:
Radiative: RRad = B ( np − ni2 ) Auger: RAug = Cn n ( np − ni2 ) + C p p ( np − ni2 )

SRH: RSRH =
( np − n ) 2
i

τ p ( n + n1 ) + τ n ( p + p1 )
Low-level radiative, Auger, or SRH recombination in p-type semi: R = Δn τ n

Current equation:
T ( E ) M ( E ) ( f1 ( E ) − f2 ( E )) dE
2q
h ∫
I=

λ (E) h
T (E) = M ( E ) = A υ x+ ( E ) D3D ( E )
λ (E) + L 4
υ T λ0 2k BT
Dn = υT =
2 π m*

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 Key equations (continued)

Current equations in the bulk:

dF dn
J n = nµ n n J n = nqµ nE x + qDn Dn µ n = k BT q
dx dx
dF dp
J p = pµ p p J p = pqµ pE x − qD p D p µ p = k BT q
dx dx

( ) ( )
Conductivity and resistivity: σ = σ n + σ p = q nµ n + pµ p = 1 ρ

Semiconductor Equations:
!
∂n ⎛ Jn ⎞
= −∇ i ⎜ ⎟ + Gn − Rn
∂t ⎝ −q ⎠
!
∂p ⎛ Jp ⎞
= −∇ i ⎜ ⎟ + G p − Rp
∂t ⎝ q⎠
!
( )
0 = −∇ i ε E + ρ

Carrier densities and QFL’s:

You should know how the carrier densities depend on the quasi-Fermi levels.

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 Practice Exam 2:

1a) Which of the following is the Fermi function?

( ( E− E )
a) f0 = 1/ 1− e F
k BT
)
f = 1/ (1+ e( )
E− E F ) k BT
b) 0

f = 1/ (1− e( )
E+ E F ) k BT
c) 0

f = 1/ (1+ e( )
E+ E F ) k BT
d) 0

f = 1/ (1− e( )
E F − E ) k BT
e) 0

1b) Which of the following is true for a non-degenerate semiconductor in equilibrium?

a) p0 = NV e(
E F − EV ) k BT

b) p0 = NV e(
EV − E F ) k BT

c) p0 = NV e(
E F − Ei ) k BT

d) p0 = NV e(
Ei − E F ) k BT

e) p0 = NV e(
E F + Ei ) k BT

1c) Which of the following is true for a non-degenerate semiconductor in equilibrium?

a) n0 = ni e(
E F − Ei ) k BT

b) n0 = ni e(
Ei − E F ) k BT

c) n0 = ni e(
E F − EC ) k BT

d) n0 = ni e(
EC − E F ) k BT

e) n0 = ni e(
E F + Ei ) k BT

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 Practice Exam 2:

1d) How does the effective conduction band density-of-states vary with effective mass?

( )
12
a) N C ∝ m*

∝ (m )
−1 2
*
b) N C

∝ (m )
1
*
c) N C

∝ (m )
−1
*
d) N C

∝ (m )
32
*
e) N C

1e) Assume that the Fermi level is near the valence band. Which of the following is true?

a) n0 = p0 = ni
b) n0 >> p0 , p0 << ni
c) p0 >> n0 , n0 << ni
d) n0 >> p0 , p0 = ni
e) p0 >> n0 , n0 = ni

1f) What is the mathematical statement of space charge neutrality?

a) n = p
b) n = N D
c) n = N D+ − N A−
d) n + N A− = p + N D+
e) n + N A− + p + N D+ = 0

1g) Consider Si doped with Phosphorous ( N D ≈ 1015 cm -3 , EC − E D = 0.045 eV ). Where is

the Fermi level located at T = 0 K?

a) Near the middle of the band gap

b) In the upper half of the band gap
c) In the lower half of the band gap
d) Below EC and above E D
e) Above EC

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 Practice Exam 2:

1h) Consider Si doped with Phosphorous ( N D ≈ 1015 cm -3 , EC − E D = 0.045 eV ). Where is

the Fermi level located at T = 300 K?

a) Near the middle of the band gap

b) In the upper half of the band gap
c) In the lower half of the band gap
d) Below EC and above E D
e) Above EC

1i) Consider Si doped with Phosphorous ( N D ≈ 1015 cm -3 , EC − E D = 0.045 eV ). Where is

( )
the Fermi level located at T = 700 K? (HINT: ni 700 K = 10 cm .)
16 -3

a) Near the middle of the band gap

b) In the upper half of the band gap
c) In the lower half of the band gap
d) Below EC and above E D
e) Above EC

1j) Which of the following statements describes a semiconductor in the freeze-out

region?

a) N D+ < N D
b) N D+ ≈ N D
c) N D+ > N D
d) N D+ ≈ ni
e) N D+ ≈ N C

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 Practice Exam 2:

2) Consider a hypothetical non-degenerate semiconductor with EG = 1.5 eV and

N C = NV = 2 × 1019 cm −3 at room temperature (300 K). The energy band diagram is
shown below. What is the hole concentration in the valence band?

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

3) Consider a hypothetical non-degenerate semiconductor in equilibrium with

ni = 1017 cm −3 . Assume that N A = 0 and N D = 1× 1017 cm −3 , but assume that the donor
is “deep” (i.e. EC − E D >> k BT ) such that N D+ = 0.5N D . Solve for the density of
electrons in the conduction band.

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

4) Consider a hypothetical non-degenerate semiconductor with a mean-free-path for

backscattering of λ0 = 100 nm and an effective mass of m* = 0.05m0 . Assume that T =
300 K. What is the electron diffusion coefficient?

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

5) N-type silicon doped at N D = 5 × 1018 cm -3 has a resistivity of 0.01 Ω − cm . Assume

that the temperature is 300 K, and for the effective mass, use the conductivity
effective mass of Si: mc* = 0.26m0 . What is the mean free path for backscattering?
HINT: Begin by finding the mobility. You may assume a non-degenerate
semiconductor.

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

6) Answer the following question about the energy band diagram show below. You may
assume that the intrinsic carrier concentration is ni = 1010 cm -3 , the temperature is
300 K, the semiconductor is non-degenerate, and the dopants are fully ionized.

What is the doping density? Be sure to specify if is N-type or P-type.

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

7) For the energy band diagram shown in Prob. 6), what is the minority carrier
concentration per cm3? (Be sure to specify whether it is electrons or holes.)

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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 Practice Exam 2:

8) For the energy band diagram shown below, sketch the electric field vs. position
using a set of axes as shown below at the right.

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 Practice Exam 2:

9) For the energy band diagram shown in Prob. 8), you may assume that the intrinsic
carrier concentration is ni = 1010 cm -3 , the temperature is 300 K, that the dopants are
fully ionized, and the semiconductor is non-degenerate. If the electron density at
x = 0 is n0 = 3.23× 1019 cm -3 , then what is the hole density at x = 10−4 cm ?
HINT: Find the electron density at x = 10−4 cm first.

A) Write down the appropriate mathematical expression and draw a box around it.
B) Insert appropriate numbers in the expression and draw a box around it.
Be sure to include units. You DO NOT need to compute a final, numerical
answer.

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