EXPERIMENT NO -1

P-N JUNCTION DIODE CHARACTERISTICS

AIM:
1. To observe and draw the Forward and Reverse bias I-V Characteristics of a P-N Junction diode.
2. To calculate static and dynamic resistance in forward and reverse Bias Conditions.

EQUIPMENT:
1. P-N Diode IN4007 - 1No.____________
2. Regulated Power supply (0-30V) - 1No.____________
3. Resistor 1KΩ - 1No.____________
4. Ammeter (0-20 mA) - 1No.____________
5. Ammeter (0-200µA) - 1No.____________
6. Voltmeter (0-20V) - 2No.____________
7. Bread board
8. Connecting wires

THEORY:
The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another
side of the semiconductor crystal forming a p-n junction as shown in the following figure.

At the junction initially free charge carriers from both side recombine forming negatively charged ions in P side
of junction(an atom in P-side accept electron and becomes negatively charged ion) and positively charged ion
on n side(an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This
region deplete of any type of free charge carrier is called as depletion region. Further recombination of free
carrier on both sides is prevented because of the depletion voltage generated due to charge carriers kept at
distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure.

Working principle:
When voltage is not applied across the diode, depletion region forms as shown in the above figure. When the
voltage is applied between the two terminals of the diode (anode and cathode) two possibilities arises depending
on polarity of DC supply.

[1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve
terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The
application of forward bias voltage will force electrons in N-type and holes in P-type material to recombine with
the ions near boundary and to flow crossing junction. This reduces width of depletion region. This further will

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result in increase in majority carriers flow across the junction. If forward bias is further increased in magnitude
the depletion region width will continue to decrease, resulting in exponential rise in current as shown in ideal
diode characteristic curve.

[2]Reverse-biased Condition: If the negative terminal of battery (DC power supply) is connected with P-type
terminal of diode and +Ve terminal of battery connected to N type then diode is said to be reverse biased. In this
condition the free charge carriers (i.e. electrons in Ntype and holes in P-type) will move away from junction
widening depletion region width. The minority carriers (i.e. –ve electrons in p-type and +ve holes in n-type) can
cross the depletion region resulting in minority carrier current flow called as reverse saturation current (Is). As
no of minority carrier is very small so the magnitude of Is is few microamperes. Ideally current in reverse bias
is zero. In short, current flows through diode in forward bias and does not flow through diode in reverse bias.
Diode can pass current only in one direction.

The I-V characteristics of the diode curve between voltage across the diode and current flowing through the
diode. When external voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode) is connected to +ve terminal and n- type (cathode)
is connected to –ve terminal of the supply voltage is known as forward bias.

The potential barrier is reduced when diode is in the forward biased condition. At some forward voltage, the
potential barrier altogether eliminated and current starts flowing through the diode and also in the circuit. Then
diode is said to be in ON state. The current increases with increasing forward voltage.

When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected –ve terminal of the supply
voltage is known as reverse bias and the potential barrier across the junction increases. Therefore, the junction
resistance becomes very high and a very small current (reverse saturation current) flows in the circuit. Then
diode is said to be in OFF state. The reverse bias current is due to minority charge carriers.
Experiment Procedure:
1. Connect the power supply, voltmeter, current meter with the diode as shown in the figure for forward
bias diode. You can use two multimeter (one to measure current through diode and other to measure
voltage across diode)
2. Increase voltage from the power supply from 0V to 20V in step as shown in the observation table
3. Measure voltage across diode and current through diode. Note down readings in the observation table.
4. Reverse DC power supply polarity for reverse bias
5. Repeat the above procedure for the different values of supply voltage for reverse bias
6. Draw VI characteristics for forward bias and reverse bias in one graph.
CIRCUIT DIAGRAM:
A) Forward bias:

B) Reverse Bias:

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EXPECTED GRAPH:

OBSERVATIONS:
A) FORWARD BIAS:
Sr Applied Voltage Forward Voltage Forward Current
no. (V)V (Vf)V (If )mA
1 0 0 0
2 0.2 0.2 0
3 0.4 0.39 0.01
4 0.6 0.49 0.11
5 0.8 0.52 0.28
6 1.0 0.55 0.45
7 2.0 0.6 1.40
8 4.0 0.64 3.36
9 6.0 0.66 5.34
10 8.0 0.67 7.33
11 10 0.68 9.32
12 15 0.7 14.3
13 20 0.72 19.3

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 B) REVERSE BIAS:
Sr Applied Voltage Forward Voltage Forward Current
no. (V)V (Vf)V (If )mA
1 0 0 0
2 2 2 0
3 5 5 0
4 10 10 0
5 15 15 0
6 20 20 0
7 25 25 0
8 30 30 0
Draw I-V Characteristics of the P-N Junction Diode
FOWARD BIAS
25

20

15

10

0
0 0.2 0.4 0.6 0.8 1 2 4 6 8 10 15 20 25 30

I-V

REVERSE BIAS
0.00035
0.0003
0.00025
0.0002
0.00015
0.0001
0.00005
0
0 2 5 10 15 20 25 30

I-V

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Calculations:
Calculation of Static and Dynamic Resistance for a given diode.

In forward bias condition:

Static Resistance, Rs = Vf/If =
Dynamic Resistance, RD = ∆Vf/ ∆If =

In Reverse bias condition:

Static Resistance, Rs = VR/IR = Dynamic
Resistance, RD = ∆VR/ ∆IR =

RESULT: The static and dynamic resistances of the PN Junction Diode are calculated from the forward and
reverse bias Characteristics.

POST LAB QUESTIONS:

1. Define depletion region of a diode.

In semiconductor physics, the depletion region, also called depletion layer, depletion zone,
junction region, space charge region or space charge layer, is an insulating region within a
conductive, doped semiconductor material where the mobile charge carriers have been
diffused away, or have been forced away by an electric field. The only elements left in the
depletion region are ionized donor or acceptor impurities.

2. What is meant by transition & space charge capacitance of a diode?

Transition occurs when reverse biasing the diode while Diffusion occurs when forward biasing.
Depletion region is formed from immobile charges, and they store charges in form of electric
field.

3. Is the V-I relationship of a diode Linear or Exponential?

The V-I relationship of a diode is non-linear because of the underlying physics of how charge
carriers (electrons and holes) behave in the semiconductor material when a voltage is applied

4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes.
The forward voltage at which the current through the junction starts increasing rapidly, is
called the knee voltage or cut-in voltage. For a bias less than the Peak Inverse Voltage, the
reverse current is very small. ... A Silicon diode has higher forward voltage potential (0.7V)
than Germanium diode (0.3V).

5. What are the applications of a p-n diode?

A p-n diode has a wide range of applications due to its ability to control the direction of current
flow, act as a rectifier, and switch between conducting and non-conducting states (switch).

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6. Draw the ideal characteristics of P-N junction diode.

7. What is the diode equation?

The diode equation describes the current-voltage (I-V) relationship of a p-n junction diode in
both forward and reverse bias. It is given by:

𝒗
I = I𝒔(𝒆𝒏𝐕 𝒕 − 𝟏)
I = Diode current (A)
I𝒔 = Reverse saturation current (A) (a small constant current when the diode is reverse
biased)
V = Voltage across the diode (V)
n = Ideality factor (typically between 1 and 2, depends on the diode material)
𝐕𝒕 = Thermal voltage (≈26mV at room temperature)

8. What is PIV?
The maximum value of the reverse voltage that a PN junction or diode can withstand without
damaging itself is known as its Peak Inverse Voltage.

9. What is the break down voltage?

The breakdown voltage is the minimum reverse voltage that makes the diode conduct
appreciably in reverse.

10. What is the effect of temperature on PN junction diodes?

Thus as the Temperature of the PN junction increases it helps to increase the velocity of holes
and electrons and thus results in increase in conductance. The barrier potential decreases
and conductivity of the diode increases.

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FOWARD BIAS

(1) (2) (3)

(4) (5) (6)

(7) (8) (9)

(10) (11) (12)

(13)

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REVERSE BIAS

(1) (2)

(3) (4)

(5) (6)

(7) (8)

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