Electronic Devices Test 1

Number of Questions: 35 Time: 90 min.

Directions for questions 1 to 35: Select the correct alterna- (A) p+ – doped
tive from the given choices. (B) n+ – doped
1. The Haynes-Shockly experiment enables one to deter- (C) used to reduce the parasitic capacitance
mine the (D) None of these
(A) mobility of the minority charge carriers. 10. Two pure specimen of a semiconductor materials are
(B) diffusion co-efficient of majority carriers taken, one is doped with 1015 cm-3 number of donors
(C) Hall co-efficient and the other is doped with 1018 cm-3 number of accep-
(D) life time of the majority carriers tors. The minority carrier density in the second speci-
2. A long specimen of n+-type semiconductor material men is 108 cm-3. What is the minority carrier density in
(A) is +vely charged (B) is –vely charged the other specimen?
(C) is electrically neutral (D) None of these (A) 1012 cm-3 (B) 1014 cm–3
(C) 1011 cm-3 (D) 1025 cm–3
3. A zener diode works on the principle of
(A) thermionic emission 11. The intrinsic carrier concentration of Si sample at
(B) hopping of charge carriers across the junction 300oK is 2.25 × 1016 m–3. If after doping the number of
(C) diffusion of charge carriers across the junction majority carriers is 4.5 × 1019 m–3, then find the minor-
(D) avalanche multiplication ity carrier density.
(A) 1.125 × 1016 cm–3 (B) 11.25 × 1014 m–3
4. Under high electric field, in a semiconductor with
(C) 2.25 ×10 m 13 –3
(D) 1.125 ×1013 m–3
decreasing electric field
(A) the mobility of charge carriers decreases 12. If the forward voltage applied to a Si diode at 27°C
(B) the mobility of charge carriers increases is 0.75V. Find the value of the forward current, if the
(C) the velocity of the charge carriers saturates reverse saturation current is 35nA.
(D) the velocity of the charge carriers increases (A) 64.25 mA (B) 45 mA
(C) 55 mA (D) 6.82μA
5. For a certain transistor, IB = 25μA, IC = 2.5mA and
β = 75, then the value of ICBO is _____ . 13. For a npn transistor IE = 3mA, a = 0.97 and ICEO = 1.5
(A) 0.625 mA (B) 0.82 mA mA, then find IC value.
(C) 8.22 μA (D) 7.5 μA (A) 2.75 mA (B) 2.955 mA
(C) 2.9 mA (D) 2.25 mA
6. In a material, the Fermi level is located between the
center of the forbidden band and the valance band. 14. The bonding forces in compound semiconductors, such
Then what is that material? as GaAsp, arise from
(A) an n-type semiconductor (A) ionic bonding
(B) a p-type semiconductor (B) covalent bonding
(C) a p+-type semiconductor (C) metallic bonding
(D) an n+-type semiconductor (D) combination of ionic and covalent bonding
7. A piece of material that is 10cm wide and 12cm long 15. The diffusion diode capacitance of a forward biased
and 0.05 mm thick has a dielectric strength of 10kV/ n+ – p junction with a steady current I depends on
mm. If it is placed between two cu plates and subjected (A) width of the depletion region
to an increasing voltage, it will breakdown at (B) junction area
(A) 1kV (B) 0.5kV (C) mean lifetime of the holes
(C) 1.5kV (D) 1.2kV (D) mean lifetime of electrons
8. In the fabrication of a buried p-n-p transistor, the pro- 16. A n-type Ge crystal has a current density of 150 A/
cesses involved are m2. The crystal has a resistivity of 0.5Ω–m and electron
1. oxidation 2. epitaxy mobility of 0.5 m2/V–S, find the time taken by the elec-
3. diffusion 4. photo lithography tron to travel 15μm in the crystal.
The correct sequence in which these processes are to (A) 0.5 msec (B) 0.4 msec
be carried out, is (C) 0.25 msec (D) 0.2 msec
(A) 4, 1, 2, 3 (B) 4, 1, 3, 2 17. Find the reverse saturation current density in an abrupt
(C) 1, 2, 3, 4 (D) 1, 4, 3, 2 Si junction. Given the following data:
9. In the fabrication of n-p-n transistor in an IC, the buried ND = 1021 m–3; NA = 1022 m–3; Dn = 3.4 ×10–3 m2/sec;
layer on the p-type substrate is DP = 1.5 × 10–3 m2/sec; Ln = 7.5 × 10–4 m;
3.120 | Electronic Devices Test 1

LP = 2.5 × 10–4 m; ni = 1.5 × 1016 m–3 thickness is 15nm, the charge density in the channel
(A) 2.323 ×10-7 A/m2 (B) 2.23 μA/m2 is __________.
(C) 2.52 mA/cm2 (D) 3.23 mA/cm2 (A) 3.45 mC/m2 (B) 0.88 mC/m2
18. The Hall coefficient of a specimen of a doped silicon (C) 4.52 × 10-7 C/cm3 (D) 3.23 × 10–3 C/cm2
is found to be 3.5 × 10–4 m3/C, the resistivity of the 24. A Si sample is doped with 1018 Arsenic atoms/cm3.
specimen is 8.9 × 10–3 Ω-m. Find the mobility of charge Where is EF relative to Ei?
carriers, assuming single carrier concentration. (A) 0.468eV below the intrinsic Fermi level
(A) 0.28 m2 /V-sec (B) 0.333 m2/V-sec (B) 0.468eV above the intrinsic Fermi level
(C) 3.45 cm /V-sec
2
(D) 0.033 m2/V-sec (C) 0.32eV above the conduction band
19. If the value of collector current IC decreases, then the (D) 0.468eV below the conduction band
value of VCE is 25. Determine the range of values of Vin that will works as
(A) decreases (B) increases the zener regulator.
(C) remains the same (D) None of the above 250Ω
+
20. If the transistor having VCE = 4.5V, VBE = 0.7 V and R
β = 50, then the value of R is _____.
Vin RL 1.5kΩ
+24V 20V
lZm
8kΩ –
R
V0 (consider Izm = 50 mA)
Vin C (A) 25 V ≤ Vin ≤ 35 V
(B) 23.33 V < Vin < 30 V
(C) 23.33 V ≤ Vin ≤ 35.83 V
250Ω (D) 20 V ≤ Vin ≤ 35 V
26. The drain of an n-channel MOSFET is shorted to the
gate so that VDS = VGS. The threshold voltage (Vth) of
(A) 79.51 KW (B) 82 KW MOSFET is 1.25V of the drain current ID is 1.5mA for
(C) 87.52 KW (D) 63.75 KW VGS = 3V, then for VGS = 1.5V, ID is
21. In a sample of Ge at room temperature, the electron (A) 2.37 mA (B) 3.45μA
concentration varies linearly with distance, as shown in (C) 4.23 mA (D) 30.61μA
figure. The diffusion current density is 0.25 A/cm2 and 27. Group-I four different semiconductor devices. Match
mobility of electrons is μn = 2400 cm2/V–s, then the each device in Group-I with its characteristic property
electron concentration is in Group-II.
N(cm–3) Group-I Group-II
2.5 × 1015
w. Photo diode 1. Early effect
x. MOS capacitor 2. Coherent radiation
No y. LASER 3. Flat band voltage
z. BJT 4. Dark current
O 0.05 x(cm)
(A) w-4, x-2, y-3, z-1 (B) w-2, x-3, y-2, z-4
(A) 24.98 × 1013 cm–3 (B) 2.498 ×1015 cm–3 (C) w-1, x-2, y-4, z-3 (D) w-4, x-3, y-2, z-1
(C) 3.24 × 10 cm
15 –3
(D) 5.25 × 1014 cm–3 28. Determine the current I in the circuit shown in figure.
22. In the following circuit transistor is in Assume the diodes to be of silicon and forward bias
resistance of diodes to be 100Ω.
D1

+ 2.4kΩ 500Ω
5V –
+ l
+
25V D2
– 5V
–
(A) cut-off region (B) Active region
(C) saturation (D) inverse active
23. In a MOS capacitor the oxide voltage exceeds (A) 5.25 mA (B) 6.433 mA
the threshold voltage by 1.5V. If the oxide (C) –4.63 mA (D) 6.9 mA
 Electronic Devices Test 1 | 3.121

29. A P-type Si sample contains a acceptor concentration 31. At VCE = 8V, find the corresponding value of ICEO.
of Na = 1020 m-3. The minority carrier electron lifetime (A) 0.237 mA (B) 2.38 μA
is τno = 15μs. Then the lifetime of the majority carrier is (C) 3 μA (D) 2.42 mA
(ni = 1.5 ×1010 cm–3)
Data for Questions 32 and 33
(A) 12.32 × 103 S (B) 3.24 × 103 S
A Si bar 0.5cm long and 120μm2 in cross-section-
(C) 1.2 × 103 S (D) 6.66 × 102 S
al area is doped with 1016 cm-3 phosphorus. Consider
Data for Questions 30 and 31 μ = 1250 cm2/V-s.
For the common-emitter characteristics of figure shown in
32. Find the resistance of the Si bar.
below
(A) 2.08KΩ (B) 4.16 KΩ
Ic(mA)
(C) 208 KΩ (D) 25.8 KΩ
8
33. Find the current at 800oK with 14V applied.
60µA
7 (A) 50.25mA (B) 6.25 mA
(C) 67.3 mA (D) 3.25mA
Saturation
region Data for Questions 34 and 35
40µA For a pn-junction with NA = 1018 cm–3 and ND = 1017 cm–3,
4
(active region) operating at T = 300°K. Consider ni = 1.5 × 1010 cm–3 and
20µA
2 17µA εr = 11.9.
10µA 34. The value of Cjo per unit junction area (μm2) would
IB = 0µA be ________ .
(A) 1.25 × 10–14 F/(μm)2 (B) 0.936 fF/(μm)2
0 5 10 15 20 VCE(V) (C) 9.36 fF/(μcm)2 (D) 1.9 fF/(μm)2
Cut off
35. If grading coefficient m = ½. Find the capacitance cj at
reverse – bias voltage of 2V, assuming a junction area
30. Find the dc β at an operating point of VCE = 8V and of 2500 μm2.
IC = 2mA (A) 1.29 pF (B) 1.52pF
(A) 120 (B) 99 (C) 0.13fF (D) 2.52pF
(C) 110 (D) 117.64

Answer Keys
1. A 2. C 3. B 4. B 5. C 6. B 7. B 8. D 9. B 10. C
11. D 12. A 13. B 14. D 15. D 16. B 17. A 18. D 19. B 20. A
21. B 22. B 23. A 24. B 25. C 26. D 27. D 28. B 29. A 30. D
31. A 32. C 33. C 34. B 35. A

Hints and Explanations

1. Choice (A) 8. Choice (D)
2. Under thermal equilibrium all semiconductors are elec- 9. Choice (B)
trically neutral. i.e., 2
10. n.p = ni
∴ total +ve charge = total –ve charge. Choice (C)
n1p1 = n2.p2
3. Choice (B)
from the given data
4. Vd = μE n1 = 1015 cm–3
1
μaE  Choice (B) p1 = ?
n2 = 108 cm–3
5. IC = β.IB + ICEO p2 = 1018 cm–3
2.5 × 10–3 – 75 × 25 × 10–6 = ICEO 108 × 1018
ICEO = 0.625 mA P1 = = 1011 cm −3  Choice (C)
ICEO = (1 + β).ICBO 1015
ICBO = 8.22 μA Choice (C) 2
11. n.p = ni
6. Choice (B)
ni2
7. V = E.d = 10 × 103 × 0.05 ∴ minority carrier density =
majority carrier density
= 0.5 kV Choice (B)
3.122 | Electronic Devices Test 1

(2.25 ×10 ) 16 2
× 1.6 × 10-19 × (1.5 × 1016 )
2

=
4.5 × 1019 = [4.533 × 10–22 + 0.6 × 10–20] × 3.6 × 1013
= 1.125 × 1013 per m3 Choice (D) = 2.323 × 10-7 A/m2. Choice (A)
 VD
 18. We know
12. We know I D = I S . e
hVT
-1 Amp 8
m = s RH
  3p
 0.75  1
I D = 35 × 10-9 e 2 × 0.026 -1 = 64.25 mA Choice (A) ∴s =
r
 
8 3.5 × 10
-4
3.5
13. IC = a.IE + ICBO m= × = 0.8488 ×
3p 8.9 × 10 -3
89
1
I CEO = . I CBO = 0.033 m2/V–sec Choice (D)
1- ∝
19. We know
ICBO = (1 – a).ICEO = 45 μA VCC = IC RC + VCE + IE RE
IC = 0.97 × 3 ×10–3 + 0.045 × 10–3 Let IC ≈ IE
= 2.955 mA Choice (B) ∴ VCE = VCC – IC(RC + RE)
14. Intrinsic S.C ⇒ covalent bond ∴ VCE↑ ⇒ IC↓ Choice (B)
GaAsp ⇒ combination of covalent and ionic nature 20. From the given circuit
Because difference in the position of Ga and As, p. 24 − 4.5
Ga → IIIrd Group element IE = mA = 2.43 75 mA.
8
P, As → Vth Group elements Choice (D)
Given β = 50
t. I f VE = IE. RE
15. C D =
h VT = 2.4375 × 250 10–3
n – p ⇒ n – side heavily doped
+ VE = 0.61 Volts
∴ If more depends on the electrons (majority carries) VB = 0.7 + VE
 Choice (D) = 1.31 Volts.
VCE = 4.5 V
16. From the given data
VC = 4.5 + VE
ρ = 0.5 Ω–m
= 5.11 Volts.
J = 150 A/m2
IE = (1 + β) IB
μn = 0.5 m2/V–S
IB = 47.79 mA
d = 15 μm
V0 − VB
distance d = IB
we know speed or velocity V = = R
time t
5.11 − 1.31
d R= × 106
∴t = 47.79
u
R = 79.5 1kW. Choice (A)
J = μ.E = μ.J.r
21. We know
= μ.J.r = 0.5 × 150 × 0.5 = 37.5 m/sec
∂n
15 × 10-6 Jn = q.Dn.
t= = 0.4 μ sec Choice (B) ∂x
37.5
Dn
17. We know reverse saturation current But = VT
mn
 Dn Dp  2
I o = A.q  +  .ni Dn = 2400 × 0.026 = 62.4 cm2/S
 Ln . N A L p . N D 
 2.5 × 1015 − N o 
Io 0.25 = 1.6 × 10-16 × 62.4 ×  
But J o =  0.05 − 0 
A
∴ No = 2.5 × 1015 – 1.25 × 1012
 3.4 × 10-3 1.5 × 10-3  = 25 × 1014 – 0.125 × 1013
Jo =  + 
 7.5 × 10 × 10 2.5 × 10-4 × 10 21 
-4 22
= 249.875 × 1013
= 24.98 × 1014 cm–3 Choice (B)
 Electronic Devices Test 1 | 3.123

22. From the given circuit 27. BJT → early effect

Base emitter junction forward bias. LASER ⇒ coherent
VB > VE mos capacitor ⇒ flat band voltage
and collector base junction reverse bias photo diode ⇒ dark current Choice (D)
VCB = 0 Choice (B) 28. Let D1 → OFF
23. We know D2 → ON
Q = CV ∴ The equivalent circuit is
= Cox.[VGS – VT] 2.4kΩ 500Ω
25V 0.7 V
e I + –
Q = ox VGS - VT 
Tox 100Ω +
5V
3.9 × 8.852 × 10 -14 –
= × 1.5
15 × 10-7
25 − 0.7 − 5
= 3.45 × 10–7 C/cm2 I= = 6.433mA
= 3.45 ×10–3 C/m2 = 3.45 mC/m2 Choice (A) 3000
24. From the given data Si doped with As. ID2 ⇒ +ve D2 → ON, D1 → OFF
∴ It is a n-type material. Otherwise D2 → OFF, D1 → ON. Choice (B)
∴ Fermi level above the Ei(intrinsic) n2

29. Minority carrier concentration ( N D ) = i

KT  N D  NA
EFn − Ei = ln   eV
q  ni 
=
(1.5 ×10 ) 10 2

 1018  = 2.25 × 106 cm–3

= 0.026.ln  eV 1014
10 
1.5 × 10  The relation between the recombination rates
= 0.468 eV Choice (B) ND NA
=
RL .Vin tno t po
25. VL = VZ =
R + RL NA
t po = .tno
Vi min =
(R + R )VL
ND
Z
RL 1014
t po = × 15 × 10-6 = 6.66 × 102 S Choice (A)
1750 2.25 × 106
= × 20V = 23.33V
1500 30. From the given graph
Vi max = IR max. R + VZ at VCE = 8 V and IC = 2 mA
IR max = Izm + IL IB ≈ 17μA
= 50mA + 13.33 mA I 2
∴ b = C = × 1000 = 117.64 Choice (D)
= 63.33 mA I B 17
Vi max = 63.33 × 10-3 × 250 + 20
= 35.83 volts Choice (C) 31. ICEO = (1 + β)ICBO
= (1 + 117.64) × 3μA
26. Given VDS = VGS = 0.237 mA Choice (A)
∴ VDS(min) = VGS
r
⇒ MOSFET operates in saturation region 32. We know R = Ω
A
I D = k (VGS − VT )
2
⇒ 1
∴ ID µ (VGS – VT)2 But r =
q. mn . N D
(V )
2
I D2 − VTn 1
=
GS2
= = 0.5 Ω – cm
(V ) 1.6 × 10-19 × 1250 × 1016
2
I D1 − VTn
GS1
0.5 × 0.5
(1.5 −1.25) R=
2
= 208.3KΩ Choice (C)
I D2 = × 1.5 × 10 = 30.61 μA
-3 120 × 10-12 × 10 +4
(3 −1.25)
2
−3
V 14 × 10
 Choice (D) 33. I = = = 67.3m Amp Choice (C)
R 208
3.124 | Electronic Devices Test 1

34. Cjo is the value of Cj obtained for zero applied voltage Cj eS 11.9 × 8.852 × 10
-12
F
= =
e .q  N N  1 A W 11.244 × 10-8 m2
∴C jo = A s .  A D  ×
2  N A + N D  Vo = 9.36 × 10-4 F/m2
 N .N  = 9.36 ×10-4 × 10–12 F/(μm)2 Choice (B)
Vo = VT ln  A 2 D  volts 35. We know general formula for junction capacitance at
 ni 
any VR.
 1018 × 1017  C jo
= 0.0259 ln  20  = 0.873 volts Cj =
 2.25 × 10   VR 
m

es . A 1 + V 
We know C jo = ∴VR = OV 
W 
o

 F
9.36 × 10-4  2  × 2500 × 10-12 m 2
2 es  1 1  m 
W=  +  (Vo + VR ) = 1
q  NA ND   2 2
1 + 
0.873 
2 × 11.9 × 8.852 × 10-14  1 1 
= ×  18 + 17  × 0.873
1.6 × 10 -19
10 10  2.34 × 10-12
=
1.814
W = 114.95 × 105 × 10-17 × 1.1 = 11.244 μcm
= 1.289 × 10–12 F
= 1.29 pF Choice (A)