US1JDF
US1JDF
The US1JDF and US1MDF are rectifiers packaged in the low profile Low Profile Design, Package Height Less than 1.1mm
D-FLAT package. Providing ultra-fast recovery time for high Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
efficiency, this device is ideal for use in general rectification Halogen and Antimony Free. “Green” Device (Note 3)
applications.
D-FLAT
Top View
Marking Information
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 8) RJT 44 °C/W
Typical Thermal Resistance, Junction to Ambient (Note 8) RJA 80 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
1.20 10
IF, INSTANTANEO US FORWARD CURRENT (A)
TA = 150°C
I F, DC FORWARD CURRENT (A)
1 T A = 125°C
0.80 1
Note 9
T A = 100°C
0.60
TA = 85°C
Note 8
0.40 0.1
T A = 25°C
0.20
T A = -55°C
0 0.01
0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0
TA, AMBIENT TEMPERATURE (°C) VF , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1 Forward Current Derating Figure 2 Typical Forward Characteristics
US1JDF / US1MDF 2 of 5 May 2016
Document number: DS36877 Rev. 9 - 2 www.diodes.com © Diodes Incorporated
US1JDF/US1MDF
40 100
T A = 150°C
10
30
T A = 125°C
T A =100°C
1
T A = 85°C
20
0.1 T A = 25°C
10
0.01
TA = -55°C
0 0.001
1 10 100 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 3 Forward Surge Current Derating Curve Figure 4 Typical Reverse Characteristics
1
CT , TOTAL CAPACITANCE (pF)
15
0.8
10 0.6
0.4
5
0.2
Note 8
0 0
0 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2
V R, DC REVERSE VOLTAGE (V) IF(AV) AVERAGE FORWARD CURRENT (A)
Figure 5 Total Capacitance Figure 6 Forward Power Dissipation
D-FLAT
HE L k
E
D-FLAT
b Dim Min Max
A 0.90 1.10
D b 1.25 1.65
c 0.10 0.40
D 2.25 2.95
E 3.95 4.60
A k 2.80 –
HE 5.00 5.60
c
L 0.50 1.30
All Dimensions in mm
D-FLAT
X1
X Value
Dimensions
(in mm)
C 4.65
Y G 2.80
X 1.85
X1 6.50
G Y 1.70
C
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