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BE - Mids - 2012

This document outlines the examination details for the Basic Electronics course at the Indian Institute of Technology, including instructions for answering questions and the structure of the exam. It contains multiple-choice questions, calculations related to semiconductor properties, circuit analysis tasks, and design questions for power supply circuits. The exam is designed for 660 students from non-ECE branches and spans 2 hours with a total of 60 marks.

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narutok2004
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4 views2 pages

BE - Mids - 2012

This document outlines the examination details for the Basic Electronics course at the Indian Institute of Technology, including instructions for answering questions and the structure of the exam. It contains multiple-choice questions, calculations related to semiconductor properties, circuit analysis tasks, and design questions for power supply circuits. The exam is designed for 660 students from non-ECE branches and spans 2 hours with a total of 60 marks.

Uploaded by

narutok2004
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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~ INDIAN INSTITUTE OF TECHNOLOGY

Date:_ Feb 2012, FN/AN, Time: 2 Hrs., Full Marks: 60, No. of Students: 660 (Non-ECE branches); Mid Spring Semester,
Sub. No.: EC21101, Sub. Name: Basic Electronics
Instructions
--------------------------~------------------------------
• All waveform sketches I diagrams must be neatly drawn and clearly labeled. Answers must be brief and to the point.
• The final answers (numerical values with unit) should be underlined or enclosed within[§] with unit.
• For every Question No., start your answer from a new page.
• Avoid writing answers ofthe various parts of a single question at different locations in your answer-script.
• For any value related to any device parameter or circuit parameter, which you may find not given with a problem, assume
suitabl(( value for such parameter.
• The choice among 4B and 4B' is given.

lA. Multiple choice questions: (3x2=6 marks)


I. The breakdown mechanism in a lightly doped p-njunction under reverse biased condition is called
(a) avalanche breakdown (b) Zener breakdown.
(c) breakdown by tunneling (d) high voltage breakdown.

II. In an n-type semiconductor, the Fermi-level is


(a) closer to the valence band (b) midway between conduction and valence band
(c) closer to the conduction band (d) within the valence band

III. The reverse - saturation current of a silicon diode -


(a) doubles for every 10°C increase in temperature (b) does not change with temperature
(c) halves for every 1oc decrease in temperature (d) increases by 1.5 times for every 2°C increment

16 3 15 3
lB. Consider a silicon pnjunction at T=400K, with doping concentration of Na=l 0 cm· and Nd= 10 cm· • Calculate
15 3 312
intrinsic carrier concentration and junction capacitance at VR=5.2 V. For silicon B= 5.23 x 10 ( cm" K ), E8 = 1.1 eV and
Cjo=0.5 pF. Boltzman constant K= 1.38 x 10"23 J/K. (9 marks)

2. Assume the circuit shown in Fig.lJand diode parameters of


Vv.= lOY, R=15 Kn, V1 =0.7 V, and v;=0.2sinrot V. Determine
the small signal diode diffusion conductance & ac component
of the output voltage. Draw appropriate circuits for de and ac
analysis.
(15 marks) Fig.l

3A. If v, = 0.7 v for the diode in Fig. 2(A), determine Vo.


(5 marks)

Fig. 2(A)

3B. Each diode in the circuit in Fig. 2(B) has piecewise linear
parameters of V1=0 and rc =0. Plot V0 versus V1 for 0::SVJ90 V.
Indicate the breakpoints and give the state of each diode in the
various regions ofthe plot.
(10 marks)

Fig 2(B)
4A.You are given a task to construct a de power supply from an ac power supply (120V rms) with minimum output
voltage ripples. What components and circuits would be required to achieve it? Make use of rectifier circuit that uses
lower peak inverse voltage diode. Explain with the help of suitable circuit diagrams and plot the input and output
waveforms at each stage. (10 marks)

4B. In the Zener diode circuit shown in Fig. 3, assume Vz== 12V
and rz ==0. (a) Calculate the Zener diode current and the power
dissipated in the Zener diode for RL==oo, (b) What will be the
value of RL such that the current in the Zener diode is one-tenth
of the current supplied by the 40 V source? (5 marks)

(Fig. 3)

OR
4B'. Plot v0 for the circuit in Fig. 4 with proper explanations.
Assume diode cut-in voltage (Vy) of 0.6 V. The input pulse
varies between +20V to -5V. The resistance in the circuit is 2.2
kn. (5 marks) ~~'4::,_.y.

j;;~
(Fig. 4)

- l

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