Solution

WORKSHEET-3

Class 12 - Physics

1.
(c) 25
Explanation:
actual depth = H
U= 4

Apparent depth = actual depth/U

= H/4/3 = 3H/4
shift = actual depth- apparent depth
3H
=H- 4
H
= 4

= h * 100/4/4 = 25%

2.
(c) 21.28 cm
Explanation:
1 μ2 1 1
= ( − 1)( − )
f μ R1 R2
1

For violet light,

1 1 1 1 1
= (1.5 − 1)( − ) = 0.5( − )
fv R1 R2 R1 R2

For red light,

1 1 1 1 1
= (1.47 − 1)( − ) = 0.47( − )
fr R1 R2 R1 R2

Hence, f r =
0.5

0.47
fv = 1.064 × 20 = 21.28cm

3. (a) The fringes shrink

Explanation:
The fringes shrink
4.
(c) 2 : 1
Explanation:
In case of coherent sources, interference occurs. Intensity at the midpoint is
Imax = k(a + a)2 = k × 4a2
In case of incoherent sources, interference does not occur.
Intensity at the midpoint is
I = I1 + I2 = ka2 + ka2 = k × 2a2
Imax
∴
I
=
4

2
=2:1

5.
(c) sin-1 ( 3

4
)

Explanation:
The condition for first minimum is
a sin θ = λ
⇒ a sin 30o = λ
⇒ a = 2λ
The condition for first secondary maximum is
a sin θ = 1
3λ

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 ⇒ sin θ 1 =
3λ

2a
=
3λ

2×2λ
=
3

∴ θ1 = sin-1 ( 3

4
)

6.
(d) β -particle
Explanation:
h 1
λ = ⇒ λ ∝
mv m

Now, m α > mn > mp > mβ

⇒ λα < λn < λp < λβ

∴ β -particle has the longest wavelength.

7.
(b) 0.51 eV
Explanation:
0.51 eV

8. (a) 1.76 ×10 11

Ckg
−1

Explanation:
1 2
eV0 = mv
2
7 2
2 (1.33× 10 )
e v 11 −1
= = = 1.76 × 10 C kg
m 2V0 2×500

9.
(b) a micron
Explanation:
a micron

10.
(d) unidirectional voltage having ripples
Explanation:
A rectifier which rectifies both halves of each a.c. input cycle is called a full wave rectifier. The output of a full wave rectifier
is continuous but pulsating in nature. However, it can be made smooth by using a filter circuit.

11.
(b) raises the potential barrier
Explanation:
When a diode is connected in a Reverse Bias condition, a positive voltage is applied to the N-type material and a negative
voltage is applied to the P-type material. The positive voltage applied to the N-type material attracts electrons towards the
positive electrode and away from the junction, while the holes in the P-type end are also attracted away from the junction
towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of electrons and holes and presents a high impedance path,
almost an insulator. The result is that a high potential barrier is created thus preventing current from flowing through the
semiconductor material.

12.
(b) Both A and R are true but R is not the correct explanation of A.
Explanation:
One assumes that in general, there is no loss of energy.

13.
(c) A is true but R is false.
Explanation:

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 A is true but R is false.

14.
(d) Both A and R are false.
Explanation:
When a light wave travel from a rarer to a denser medium it loses speed, but energy carried by the wave does not depend on its
speed. Instead, it depends on the amplitude of wave The frequency also remain constant.

15. (a) Both A and R are true and R is the correct explanation of A.
Explanation:
Both A and R are true and R is the correct explanation of A.
16. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
Explanation:
Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
17.
(b) μ = μ < μ
1 2

Explanation:
Since light rays do not suffer any refraction while entering the lens, μ = μ 1

But as light rays diverge when they emerge from convex lens, μ < μ 2

18. (a) there will be no change in fringe width

Explanation:
The fringe width remains the same and only the pattern shifts.
19. (a) 2.5 A
Explanation:
D1 is reverse biased and D2 is forward biased. D1 blocks current. Hence, Current will flow through 10 V cell, R1, D2 and R3.
∴ I= ε

R1 + R3

10 V
= = 2.5 A
(2+2)Ω

20.
(b) 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junction
Explanation:
When p-n junction is forward biased, it opposes the potential barrier across junction. When p-n junction is reverse biased, it
supports the potential barrier junction, resulting increase in potential barrier across the junction.

21. Here, the point P on the right of the lens acts as a virtual object.
a. f = 20 cm, u = 12 cm
Since = + 1

v
1

f
1

1 1 1 3+5 8
∴ = + = =
v 20 12 60 60

or v = 60

8
= 7.5cm

Image is at 7.5 cm to the right of the lens, where the beam converges.
b. f = -16cm, u = 12 cm
1 1 1 1 1 −3+4 1
∴ = + = − + = =
v f u 16 12 48 48

or v = 48 cm
Hence the image is at 48 cm to the right of the lens, where the beam would converge.

22. Energy of electron accelerated through potential difference of 56V = 56 × 1.6 × 10-19J
2
p
a. As E = 2m
[p = mv, E =
1

2
2
mv ]

2
∴ p = 2mE
−−−−
⇒ p = √2mE

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 −−−−−−−−−−−−−−−−−−−−−−−−− −
or p = √2 × 9 × 10 −31
× 56 × 1.6 × 10
−19

p = 4.02 × 10-24kg ms-1

h
b. p = λ
−34
h 6.62×10
∴ λ = =
p −24
4.02×10

= 1.64 × 10-10 m
= 0.164 × 10-9m
or λ = 0.164nm
23. de-Broglie wavelength of accelerated charged particle is given by -
h 1
λ = ⇒ λ ∝
√2mqV √mqV

Ratio of wavelengths of proton and α -particle.

−−−−−−−−−−−−−−
λp ma qa Va
= √( )( )( )
λα mp q Vp
p

mα q
Here, mp
= 4,
α

qp
= 2 ,
Vα λp
X
= , = 1
Vp 512 λα
−−−−−−−−−−−
X X
⇒ 1 = √4 × 2 × ( )=
512 64

Thus, X = 64 V
24. λ = h

√2mK

′ h
λ =
√2 m×4 K

1 h
=
2 √2mK

λ
=
2

1.2 nm
=
2

= 0.6 nm
Hence the new value of the wavelength of the wave be 0.6 nm.
25. a. From the given curve, V = 0.8 volt for current 20 mA and V = 0.7 volt for current 10 mA,
⇒ ΔI = (20 − 10)mA

−3
⇒ ΔI = 10mA = 10 × 10 A

−2
⇒ ΔI = 10 A

and ΔV = (0.8 − 0.7) = 0.1V

ΔV
Resistance of the diode is given by, R = ΔI
0.1
⇒ R=
−2
10

⇒ R = 10Ω

b. For V = -10V, we have

−6
I = −1μA = −1 × 10 A
V
resistance of diode is given by, R = I
−10 7
⇒ R= = 1.0 × 10 Ω
−6
−1×10

n1
26. 1
= (
n2
− 1) (−
1

R2
−
1

R2
)
f

i. for n1 = n2 f = ∞
ii. for n1 < n2 f > 0
iii. for n1 > n2 f < 0
The path of rays in three cases is shown in fig.

(A+δm )
sin[ ]
2

27. i. At minimum deviation μ = A

sin( )
2

Given δ m = A

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 A A
2 sin cos
sin A 2 2 A
∴ μ= = = 2 cos
A A 2
sin sin
2 2

√3
∴ cos
A

2
=
2
or A

2
= 30

⇒ A= 60o

ii.

– 1 1
μ = √3 = ⇒ sin ic =
sin ic √3

28. Fringe width, β = λD

Clearly fringe width can be increased by

i. increasing the distance D between the coherent sources and the screen.
ii. decreasing the distance d between the two coherent sources,
iii. using the light of higher wavelength λ .
29. Wavefront is defined as the locus of all the points in space that reach a particular distance by a propagating wave at the same
instant.

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30. Here, λ = 16.5nm = 16.5 × 10 −9
m

and mass of proton m = 1.6 × 10 −27

kg

Using de-Broglie equation,

h
λ =
mv
h
⇒ v =
mλ
2
1 2 1 h
∴ K . E. = mv = m ⋅
2 2 2 2
m λ
2
h
K . E. =
2
2mλ
−34 −34
6.63× 10 ×6.63× 10
=
−27 −9 −9
2×1.675× 10 ×16.5× 10 ×16.5× 10

−25
= 4.82 × 10 J

−−−−
31. a. p = √2mE
−−−−−−−−−−−−−−−−−−−−−−−−−−−−−
−31 −19
⇒ p = √2 × (9 × 10 ) × (120 × 1.6 × 10 )

−24 −1
= 5.88 × 10 kg ms

b. p = mv
p
v= m
−24
5.88×10
=
−31
9.1×10

or v = 6.46 × 10 6
m/s
−34
h 6.63×10
c. λ = p
=
−24
= 1.13 × 10
−10
m
5.88×10

o
= 1.13 A
32. Let W0 be the work function of the metal. Let E1 and E2 be the kinetic energies of photoelectrons corresponding to frequencies ν
and 2ν of the incident radiation.
Using Einstein's photoelectric equation, we find
hν = E1 + W0

and 2hν = E2 + W0
On dividing,

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 E2 + W0
2 =
E1 + W0

or 2E1 + 2W0 = E2 + W0
or E2 = 2E1 + W0
Thus, the kinetic energy of photoelectrons is increased more than double on doubling the frequency of incident radiation.
33. Kinetic energy of photoelectrons emitted from the surface of a photosensitive material,
KEmax = hν - ϕo
A graph is shown between the frequency of incident radiation (ν ) and the maximum kinetic energy of the electrons emitted from
the surface of a photosensitive material.

i. So the graph between Kmax and ν is a straight line as shown in Figure. From this graph, the Planck constant can be calculated
by the slope of the current.
△Kmax
Slope of Kmax−ν graph = △ν
=h

ii. Work function is the minimum energy required to eject the photo-electron from the metal surface,
ϕo = hν 0 , where ν 0 = Threshold frequency
Now, Intercept on the negative Kmax axis = ϕ0
Thus, Intercept on the negative Kmax axis gives the value of work function.

34. When p-type semiconductor is chipped with n-type semiconductor, e-from the n-side diffuse towards p-side and holes from p-side
diffuse towards n-side leaving behind a layer of immobile +ve ions on n-side and immobile -ve ions on p-side leading to
formation of depletion layer.
35. Barrier potential is the potential difference required by the electrons in the PN junction diode to pass the electric field across the
semiconductors.
During reverse biased conditions the p junction of the diode is connected to the negative of the battery and N junction to the
positive of the battery. Thus the holes of the P side are pulled away from junction and electrons form N side leave the charged ions
and thus the thickness of the depletion layer increases.
36. Diode D1 is forward biased, while diode D2 is reverse biased.
Hence the resistances of diodes D1 and D2 can be taken as zero and infinity respectively. The given circuit can, therefore, be
redrawn as shown in the figure

∴ Using Ohm's law,

6
I = A = 2A
(2+1)

∴ Current flowing in the 1 Ω resistor is 2 A.

2
I1 a a1 −
37. Here β = or
1
= = √β
I2 2 a2
a
2

As Imax = k (a1 + a2)2 and Imin = k (a1 - a2)2

2 2
Imax − Imin k( a1 + a2 ) −k( a1 − a2 )
∴ =
Imax + Imin 2 2
k( a1 + a2 ) +k( a1 − a2 )

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 2 2
( a1 + a2 ) − ( a1 − a2 ) 4a1 a2
= =
2 2 2 2
( a1 + a2 ) + ( a1 − a2 ) 2(a + a )
1 2

2( a1 /a2 ) 2√β

= =
2 β +1
a
1
[ +1]
2
a
2
h h
38. λ = p
=
√2mEk

where Ek = kinetic energy

since wavelengths associated with an electron and a proton are equal
Ek ∝ 1

mass

mass of electron < mass of proton

∴ Kinetic Energy of electron is more than kinetic energy of proton.

39.

For no parallax, the image formed by the convex lens must form at the pole of the concave mirror.
For the convex lens:
f = 15 cm and v = 10 cm (separation between the convex lens and the concave mirror)
From convex lens formula, we get
1 1 1
= −
f v u

1 1 1
= −
+15 30 u

1 1 1
= −
u 30 15
1 1
= −
u 30

∴ u = -30 cm
Now the image will form at Q which is the virtual object for concave mirror. The final image will form at the optical centre.
Hence the distance of the object is 30 cm from the mirror. This means that the object must be placed 30 cm in front of the convex
lens.
40. A telescope has objective lenses producing long focal lengths, while a microscope has objective lenses producing short focal
lengths. Telescopes and microscopes also substantially differ in the diameters of their lenses.
Given: f0 = 1.25 cm, fe = 5 cm
M = -30 (Magnifying power is negative)
We know,
v0 D
M = (1 + )
u0 fe

Where, v0 = Distance of image from objective, u0 = Distance of object from objective, D = Distance of least distinct vision
Thus,
v0 25
-30 = u0
(1 +
5
)

Thus, v0 = -5 u0
Using lens formula,
1 1 1
= − +
f0 u0 v0

1 1 1
= − −
1.25 u0 5u0

So, u0 = -1.5 cm
Thus the object must be at a distance of 1.5 cm from objective lens.
41. d = 0.15mm = 15 × 10 m −4

−7
λ = 450nm = 4.5 × 10 m

D = 1m
i. a. The distance of nth order bright fringe from central fringe is given by
Dnλ
yn =
d

For second bright fringe,

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 −7
2Dλ 2×1×4.5×10
y2 = =
d −4
1.5×10

−3
y2 = 6 × 10 m

The distance of the second bright fringe,

y2 = 6mm
b. The distance of nth order dark fringe from central fringe is given by
′ Dλ
yn = (2n − 1)
2d

For second dark fringe, n = 2

′ Dλ 3Dλ
yn = (2 × 2 − 1) =
2d 2d
−7
′ 3 1×45×10
yn = ×
2 −4
1.5×10

The distance of the second dark fringe,

′
yn = 45mm

ii. With increase of D, fringe width increases as

Dλ
β =
d
or β ∝ D
42. a. Using the theory of diffraction fringes sin θ = nλ

a
x nλ
=
D a

n=1
a = 0.2 × 10-3 m
D=1m
λ = 600 × 10-9 m
−9

x= 1×600× 10

−3
×1

0.2×10

= 3 mm ; so the distance of first minima is 3 mm.

1 λ
b. sin θ = (n − 2
)
a

x 1 λ
= (n − )
D 2 a

n=2
3λD
x= 2a
−9
3×600× 10 ×1
= −3
2×0.2×10

= 4.5 mm
43. a. When a photon of the energy hv is absorbed by an electron in the photosensitive material, a part of the energy absorbed is used
up in liberating it from the surface (the work function). The remaining energy appears as KE of the photoelectron.
b. Emission of electron will not take place.
Energy hv, of a single photon, is less than the work function ϕ ∘

c. Vo = 1.5 V
kmax = eVo = 1.6 × 10-19 × 1.5 = 2.4 × 10-19 J
44. i. W 0 = hv0 =
hc

λ0

−34 8
hc 6.6× 10 ×3× 10
∴ λ0 = =
W0 −19
2.0×1.6×10

o
= 6.1875 × 10-7 m = 6187.5 A
ii. K max =
hc

λ
− W0

−34 8
6.6× 10 ×3× 10
= − 2.0
−9 −19
500× 10 ×1.6× 10

= 2.475 - 2.0 = 0.475 eV.

Kmax
iii. V 0 =
e
= 0.475 V.
45. a. Mass of the bullet, m = 0.040 kg
Velocity with which the bullet is travelling, v = 1 kms-1 = 103 ms-1
using the formula of momentum,
p = mv
3
= 0.040 × 10

= 40 kg ms-1
∴ De-broglie wavelength of bullet is given by :-

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 h
λ =
p
−34
6.62×10
=
40

−35
= 1.7 × 10 m

b. Mass of the ball, m = 0.060 kg

Velocity with which the balls is moving, v = 1.0 ms-1
Momentum of the particle, p = mv = 0.060 kg ms -1
Therefore,
h
λ =
p
−34

De-broglie wavelength of the ball is given by = 6.62×10

0.060
−32
= 1.1 × 10 m

c. Mass of the dust particle, m = 1.0 × 10 −9

kg

Velocity of the particle, v = 2.2 m/s

Momentum of the particle, p = mv = 2.2 × 10-9 kg ms-1
Therefore,
−34

De-broglie wavelength, λ = h

p
=
6.62×10

−9
2.2×10

−25
= 3 × 10 m

46. a. The diagram of astronomical telescope is as shown below

b. i. Length of tube = fo + fe
= 150 + 6 = 156 cm
ii. Magnification = 150

= 25
47. a. Two conditions
i. The light must travel from an optically denser medium to a rarer medium.
ii. Angle of incidence should be greater than the critical angle.

b.

48. i. The two theories are similar in the respect that according to both the theories, light is a wave motion. However by
electromagnetic theory light does not need any medium to propagate while by Huygen's, wave theory a medium is a must.
That is why he assumed a hypothetical medium 'ether' through which light wave travels in a vacuum.
ii. The angle between incident wavefront with the interface is called the incident angle of the light wave.
49. In case of single slit, the diffraction pattern obtained on the screen consists of a central bright band having alternate dark and weak
bright band of decreasing intensity on both sides.
The diffraction pattern can be graphically represented as

10 / 21
 Points to compare the intensity distribution between interference and diffraction are:
a. In the interference,it is produced due to two different wave fronts, but in diffraction, it is produced due to different parts of
same wave fronts.
b. In the interference, fringe width is same size, but in diffraction, central fringe is twice as wide as other fringes.
c. In the interference, all bright fringes have same intensity, but in diffraction, all the bright fringes are not of the same intensity.
d. In interference, the widths of all the fringes are same but in diffraction, fringes are of different widths. The point C
corresponds to the position of central maxima and the position−3λ, 2λ, −λ, λ, 2λ, 3λ. . . . . are secondary minima. The
above conditions for diffraction maxima and minima are exactly reverse of mathematical conditions for interference maxima
and minima.
50. Let XY be interface and c1 and c2 are velocity of light in rarer and denser medium respectively.

c1
then, μ = c2

μis refractive index of medium 2 with respect to medium 1.

According to Huygens principle, every point of plane wavefront AB acts as a source of secondary wavelet. Let the secondary
wavelets from B strikes XY at A' in t seconds
BA' = c1 × t
Similarly from A secondary wavelet travels in denser medium with velocity c2
AB' = c2 × t
In △AA'B
′ C1 t
sin i = BA

′
=
′
AA AA
′ C2 ×t
In △AA'B' sin r = AB
′
= ′
AA AA
c1 n2
sin i

sin r
=
c2
= u =
n1
This proves snell's law of refraction.
h
51. a. λ = mv
−34
6.63×10
v= h

mλ
= −31 −9
9.1× 10 ×0.30× 10

= 2.41 × 106 m/s

b. K.E. = 1

2
mv2
= 1

2
× 9.1 × 10-31 × (2.41 × 106)2 J
= 26.42 × 10-19 J
K.E. in eV
−19

= 26.42×10

19
= 16.5 eV
1.6×10

52. a. E = hv
−19

v= E

h
= 6.5×10

−34
6.63×10

= 9.8 × 1014 Hz

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 b. Energy of photon in eV
E = 6.5 × 10-19 J = 4.06 eV
∵ E > ∅ There will be photoelectric emission.
0

K.E of photoelectron Ek = E - ∅ 0

= 4.06 - 2.14
= 1.92 eV
53. i. The photoelectric effect cannot be explained on the basis of wave nature of light because wave nature of radiation cannot
explain the following:
a. The instantaneous ejection of photoelectrons.
b. The existence of threshold frequency for a metal surface.
c. The fact that kinetic energy of the emitted electrons is independent of the intensity of light and depends upon its frequency.
ii. Photon picture of electromagnetic radiation on which Einstein's photoelectric equation is based on particle nature of light Its
basic features are given as below:
a. In interaction of radiation with matter, radiation behaves as if it is made up of particles called photons.
b. Each photon has energy E (= hν = hc

λ
) and momentum p(= E/c).
c. All photons of light of a particular frequency ν or wavelength λ have the same energy E (= hν = hc

λ
) and momentum p (=
E/c) whatever the intensity radiation may be.
d. By increasing the intensity of light of given wavelength, there is only an increase in the number of photons per second
crossing a given area with each photon having the same energy. Thus, photon energy is independent of the intensity of
radiation.
54. i. When p-n junction is forward biased, the positive terminal of the battery pushes the holes of the p-region and negative
terminal pushes the electrons of n-region towards the junction. The presence of electrons and holes decreases the width of the
p-n junction, as shown in the figure.

ii. When p-n junction is reversed biased, the negative terminal of the battery pulls holes from p-region and positive terminal pulls
the electrons from the n-region away from the junction. This increases width of the depletion layer, as shown in figure.

55. Semiconductors in which the number of electrons ne is equal to the number of holes nh are intrinsic semiconductors.
When a small amount of suitable impurity is added to the intrinsic semiconductor we can convert it into an extrinsic
semiconductor of either p-type or n-type. Doping changes the concentration of charge carriers in the element.
i. p-type: When Si or Ge is doped with any trivalent impurity like AI, B, etc we get a p-type semiconductor. The dopant has one
valence electron less. Thus, this atom form a covalent bond with the neighboring three atoms and is less of one electron to
offer to the fourth silicon atom and as a result, there is a vacancy. Hence, an electron in the outer orbit of the neighboring atom
may jump to fill this vacancy leaving a vacancy or hole at its own site. This hole is the conducting charge carrier. Therefore,
doping with a trivalent impurity gives us a p-type semiconductor.
The energy band diagram for a p-type semiconductor is as shown below:

12 / 21
 ii. n-type: When we dope Si or Ge with pentavalent impurities like As, P then four electrons of this atom will form covalent
bonds with the neighboring Si atom in the lattice. Whereas, the fifth electron will remain loosely bound to its parent atom.
Hence, the ionization energy which is required to make this electron free is very less and it will move around even at room
temperature. Thus, the pentavalent dopant will donate one extra electron for conduction and this acts as an n-type
semiconductor.
The energy band diagram for n-type semiconductor is as shown below:

56. Diffusion and drift processes take place during the formation of the p-n junction.
The region near the junction which is free from the charge carriers is called the depletion layer. It is formed due to the
combination of electrons and holes during the diffusion process due to the difference in the density of charge carriers in p and n
semiconductors. It develops a layer of positive ions on n-side and negative ions on the p-side.

The positive ions and negative ions develops potential difference across the junction and an internal electric field E, directed from
n-side top-side. The potential difference gets developed due to positive and negative ions across the depletion layer is called the
potential barrier. It stops the diffusion process. This potential barrier reduces in forward biased mode and increases in reverse
biased mode.

57. a.

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 b.

Since n 21 =
sin i

sin r

From the figure and calculations

r1 + r2 = A
At minimum deviation i.e. δ = δ m, i = e and r1 = r2 = r

∴ r= A

2
...(eqn 1)
From the figure
δ = (i - r1) + (e - r2)

∴ δm = (i + e) + (r1 + r2)

... (eqn 2)
A+δm
i =
2
A+δm
Sin
sin i 2
∴ n21 = =
sin r A
sin
2

58. Consider a plane Mirror m1 m2

Let AB is the plane wavefront incident on the mirror such that ∠ BAA' = ∠ i
1, 2, 3 are corresponding incident rays perpendicular to AB.
Let the secondary wavelet from B strike mirror at A' in t seconds. As according to Huygen's principle
A'B' acts as reflected wavefront.
BA' = c × t
c = velocity of light
similarly secondary wavelet travel in t time from A.
AB' = c × t
Thus A'B' is the secondary wavefront after t second. Hence A'B' is the true reflected wavefront.
In △s AA'B and AA'B'
BA' = AB' = c × t
∠ B = ∠ B' = 90o
AA' is common and thus △s are congruent
∴ ∠ i = ∠ r first law of reflection

Also, incident wavefront AB, the reflected wavefront A'B' and reflecting surface m1m2 all are perpendicular to the plane of the
paper. Therefore, incident ray, normal to the mirror m1m2 and reflected ray all lie in the plane of the paper.
This is second law of reflection.

59. Let A and B are two fine slits at a distance of d. Let monochromatic light of wavelength λ is illuminated through these slits. If O
is the centre of slit having width d. Consider a point P at a distance x from C.
Path difference of two waves = BP - AP

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 In △PBF
BP2 = BF2 + PF2
1

BP = (BF 2
+ PF
2
) 2

1
2
= (D 2
+ (x +
d

2
)
2

d 2 2
(x+ )

= D[1 + 2

2
]
D

d 2
(x+ )

= D [1 + 1

2
2

2
]
D

Similarly in △PAE
1

AP = (AE 2
+ PE
2
) 2

2 2
d
= [D 2
+ (x −
2
) ]

2
d
⎡ x− ⎤
=D 1 +
1

2
(
2
2
)
⎣ D ⎦

So, BP-AP
d 2
(x+ )

=D+ 1

2
2

D
− D−
2D
1
(x −
d

2
2
)

= 1

2D
[
4xd

2
]

= xd

For bright fringes,

xd

D
= nλ
x= nλD

n = 0, 1, 2, 3...
n = 0 for central maxima
for dark fringes
xd λ

D
= (2n − 1) 2
λD
x = (2n − 1) 2d
n = 1, 2 ...
by using bright fringes
fringe width = x − x n n−1

= nλD
− (n − 1)
d
= λD

d
λD

d
λD
β =
d

60. Given that

Initial kinetic energy of photoelectrons is given by = K1​
Final kinetic energy of photoelectrons is given by K2 = 2K1​
Wavelength of light changes from λ to λ 1 2

Let the threshold frequency is ν ​and work function is ϕ 0 0

Now, we know that:-

hc

λ
= ϕ + KE 0

hc

λ1
= ϕ + K1 ...(i)
0

hc

λ2
= ϕ + K2 ...(ii)
0

K2 = 2K1
hc

λ2
= ϕ + 2K1 ...(iii)
0

15 / 21
 2hc

λ1
= 2ϕ + 2K1 (eq (i) × 2)
0

2hc hc
− = ϕ0
λ1 λ2

2λ2 − λ1
⇒ ϕ0 = hc ( )
λ1 λ2

We know
work function is given by ϕ 0 =
hc

λ0

hc 2λ2 − λ1
= hc ( )
λ0 λ1 λ2

1 2λ2 − λ1
=
λ0 λ1 λ2

λ1 λ2
λ0 =
2λ2 − λ1

61. Read the text carefully and answer the questions:

Distance between two successive bright or dark fringes is called fringe width.
(n+1)λD
β = Yn + 1 - Yn = d
−
nλD

d
= λD

Fringe width is independent of the order of the maxima. If whole apparatus is immersed in liquid of refractive index μ then β =
λD

μd
(fringe width decreases). Angular fringe width (θ) is the angular separation between two consecutive maxima or minima
β λ
θ= =
D d

In the arrangement shown in figure, slit S3 and S4 are having a variable separation Z. Point O on the screen is at the common
perpendicular bisector of S1S2 and S3S4.

(i) (d) five

Explanation:
The condition for possible interference maxima on the screen is, d sinθ = nλ
where d is slit separation and λ is the wavelength.
As d = 2λ (given) ∴ 2λ sinθ = nλ or 2 sinθ = n
For number of interference maxima to be maximum,
sinθ = 1 ∴ n = 2
The interference maxima will be formed when
n = 0, ± 1, ± 2
Hence the maximum number of possible maxima is 5.
(ii) (b) narrower
Explanation:
Fringe width, β = λD

∴ If we replace yellow light with blue light, i.e., longer wavelength with shorter one, therefore the fringe width
decreases.
(iii) (c) Quadrupled
Explanation:
d' = and D' = 2D
d

Fringe width, β = λD

New fringe width β ' = λ ( 2D

) = 4β
d/2

(iv) (a) become narrower

Explanation:
′

When Youngs double slit experiment is repeated in water, instead of air. λ =

′ λ

μ
, i.e., wavelength decreases. β = λ D

d
,
i.e., fringe width decreases.
∴ The fringe become narrower.

16 / 21
 (v) (a) does not move at all
Explanation:
Using white light, we get white fringe at the centre i.e., white fringe is the central maximum. When the screen is
moved, its position is not changed.
62. 2
Explanation:
For the convex spherical refracting surface i.e., air-oil interface
u = -24 cm, v = ?, u1 = 1, μ = and R = 6 cm 2
7

−μ1 μ2 μ2 − μ1
+ =
u v R
7 7
−1
−1 4 4
∴ + =
(−24) v 6

∴ v = 21 cm
This image will not as object for the water-oil interface

u = 21 cm, v = v , μ ′
1
=
7

4
,μ 2
=
4

3
anf R = ∞
−7 4

+21
4
+
3

′
=0
V

∴ v = 16 cm
′

Therefore the distance of the image from the bottom of the tank = 18 - 16 = 2 cm
63. i.

Here, ΔABC ∼ ΔA'B'C,

CP −BP −2f +u
AB

′ ′
=
CB

′
=
′
=
−2f +v
...(i)
A B CB CP +P B

Also, ΔM P F ∼ ΔA B F
′ ′
, therefore,
MP FP FP

′
= ′
= ′
′
A B FB FP +P B

−f
∴
AB
′ ′
=
−f +v
[∵ MP = AB] ...(ii)
A B

From equation (i) and (ii), we get

−2f +u −f
=
−2f +v −f +v

⇒ -fv - fu + uv = 0
uv = fv + fu
Dividing both sides by uvf, we get,
=
1

f
+ , this is the required result.
1

u
1

ii. By using the Lens-maker formula, we get

1 1 1
= (μ − 1) [ − ]
f R1 R2

1 1 1
= (1.5 − 1) [ − ]
f 20 ∞

1 0.5 1
= =
f 20 40

⇒ f = 40 cm
Now, = − 1

f
1

v
1

1 1 1
= −
40 v (−30)

−40×30
v= 10

17 / 21
 v = -120 cm
Image is virtual, and enlarged in front of lens 120 cm away.
64. i. Assuming the aperture of the surface is small as compared to other distance involved, so that small angle approximation can
be taken under consideration. For small angles in △NOC, i is the exterior angle.
By exterior angle theorem;
∴ i = ∠ NOM + ∠ NCM
i =
MN
+
OM
...(i) MN

MC

Similarly r = ∠ NCM - ∠ NIM

=
MN

MC
− ...(ii) MN

MI

By Snell’s law
n1sin i = n2 sin r
for small angles
n1 i = n2 r
substituting i and r from (i) and (ii) we get
n1 n2 n2 − n1
+ =
OM MI MC

Applying Cartesian coordinates

OM = -u, MI = +v, MC = +R
n2 n1 n2 − n1
− =
v u R
n2 n1 n2 − n1
ii. v
−
u
=
R

R= -6 cm, u = -3cm , n1 = 1.5 n2 = 1

1 1.5 1−1.5
+ =
v 3 −6

1 0.5 1.5
= −
v 6 3
1 0.5−3
=
v 6

1 −2.5
=
v 6

v = -2.4 cm
from the left surface inside the sphere
65. i. Each point of the wavefront is the source of a secondary disturbance and the wavelets emanating from these points spread out
in all directions with the spread of the wave. Each point of the wavefront is the source of a secondary disturbance and the
wavelets emanating from these points spread out in all directions with the speed of the wave. These wavelets emanating from
the wavefront are usually referred to as secondary wavelets and if we draw a common tangent to all these spheres, we obtain
the new position of the wavefront at a later time.

△EAC is congruent to △BAC; so <i = <r

ii. Two sources are said to be coherent if the phase difference between them does not change with time.
No, two independent sodium lamps cannot be coherent.
Two independent sodium lamps cannot be coherent as the phase between them does not remain constant with time.
iii. 4β = 5β
2 1

λ D
λD known
4 × = 5 ×
d d
5
⇒ λ = × λ
4 hnoun
5
= × 520
4

= 650 nm
66. i. ABC is the section of the prism, B is a right angle. A and C are equal angles i.e. A = C = 45°.
The ray PQ is normally incident on the face AB. Hence it is normally refracted and the ray QR strikes the face AC at an angle
of incidence 45°. It is given that the ray does not undergo refraction but is totally reflected at the face AC. This gives a
maximum value for the critical angle as 45°.

18 / 21
 sin C = sin 45° = 1
in the limit
√2

Since μ = 1

sin C
=
1

√2

–
or, μ = 1

sin 45
or μmin = √2

–
The minimum value of refractive index = √2 .
ii. When the prism is immersed in water the critical angle for the glass water interface is given by

4/3 4
sin C1 = =
√2 3√2

C1 = 70.53°
The angle of incidence at R continues to be 45° and since 45° < 70.53°, refraction taking place and the refracted ray is RS.
The angle of refraction r is given by μ sin i = μ sin r g w

sin i
g μω =
sin r
μ
ω sin i
=
μg sin r

– ∘ 4
√2 sin 45 = sin r
3

3√2 ∘ 3√2 1 3
sin r = sin 45 = × =
4 4 √2 4

−1 3 ∘ ′
r = sin = 48 36
4

∴ The angle of refraction in water = 48 ∘

36
′

67. In case of refraction at convex spherical surface, when object is in rarer medium, the image is formed real.

In △OAC, i = a + γ and in ΔAI C , γ = r + β or r = γ − β

α+γ
Therefore, By snell's law, we have 1
μ2 =
sin i

sin r
≈
i

r
=
γ−β
μ α+γ
or 2

μ1
=
γ−β
or μ 2γ − μ2 β = μ1 α + μ1 γ

or (μ − μ ) γ = μ α + μ β ................(i)
2 1 1 2

As α, β and γ are small and P and N lie close to each other.

So, α ≈ tan α = AN

NO
≈
AN

PO
AN AN
β ≈ tan β = ≈
NI PI
AN AN
γ ≈ tan γ = ≈
NC PC

On using them in equation (i), we obtain

AN AN AN
(μ2 − μ1 ) = μ1 + μ2
PC PO PI
μ2 − μ1 μ1 μ2
or PC
=
PO
+
PI
..........(ii)

19 / 21
 where, PC = +R, radius of curvature
PO = -u, object distance
PI = +v, image distance
μ −μ μ μ μ −μ μ μ
So, 2

R
1
=
−u
1
+
2

v
or 2

R
1
=
2

v
−
1

This gives formula for refraction at spherical surface, when object is in rarer medium.
68. a. The main considerations with an astronomical telescope:
The diameter of the objective on which the brightness of the image and resolving power depend.
f
The focal length of the objective on which the magnification (m = f
0
) depends.
E

b.

fo
Magnifying power =
fe

c. Two advantage
The image formed in a reflecting telescope is brighter than the image formed in a refracting telescope.
Lenses used in large sized refracting telescopes are very heavy and bulky and difficult to manufacture whereas mirrors used in
large sized reflecting telescopes can be made thin and light using different techniques
69. i. Suppose a plane wavefront AB in first medium is incident obliquely on the boundary surface XY and its end A touches the
surface at A' at time t = 0 while the other end B reaches the surface at point B' after time-interval t.

As the wavefront AB advances, it strikes the points between A and B' of boundary surface. According to Huygen’s principle,
secondary spherical wavelets originate from these points. First of all secondary wavelet starts from A, which traverses a
distance AA = v t in second medium in time t. In the same time-interval t, the point of wavefront traverses a distance
′
2

BB = v t in first medium and reaches B', from, where the secondary wavelet now starts. Assuming A as centre, draw an arc
′
1

of radius AA = v t and draw tangent B' A' on this arc from B'. As the incident wavefront AB advances, the secondary
′
2

wavelets start from points between A and B', one after the other and will touch A' B' simultaneously. According to Huygen’s
principle A' B' is the new position of wavefront AB in the second medium.
As the lines drawn normal to wavefront denote the rays, therefore we may say that the incident ray, refracted ray and the
normal at the point of incidence all lie in the same plane.
Let the incident wavefront AB and refracted wavefront A' B' make angles i and r respectively with refracting surface XY.
Now, in ΔABB , ′

′ v1 t
BB
sin i = =
AB ′
AB

In ΔAA B , ′ ′

′ v2 t
AA
sin r = =
′ ′
AB AB

Dividing equation (i) by (ii) , we get :

′
sin i v1 t/AB
=
sin r ′
v2 t/AB

v1
sin i

sin r
=
v2
= constant =
1
μ2

where, = refractive index of second medium w.r.t. first medium. Hence, Snell's law of refraction is verified.
1μ2

ii. No, the energy carried by the wave does not depend on its speed instead, it depends on the frequency of the wave.
70. The phenomenon observed is diffraction.

20 / 21
 i. At the cental maxima: The contributions due to the secondary wavelets, from all parts of the wavefront (at the slit), arrive in
phase at the central maxima θ = 0 At the secondary maxima: It is only the contributions from (nearly) (or , or ,...) of the
1

3
1

5
1

secondary maxima. These occur at points for which

θ ≡ (n + ) (n = 0, 1, 2, 3,...)
1

2
λ

At the minima:
The contribution, from 'corresponding pairs', of the sub-parts of the incident wavefront, cancel each other and the net
λ
contribution, at the location of the minima, is zero. The minima occur at points for which, θ = n (n = 0, 1, 2, 3,...)
a

ii. There is a significant fall in intensity at the secondary maxima because the intensity there is only due to the contribution of
1 1 1
(nearly)( 3
or 5
or 7
, ...,) of the incident wavefronts.
iii. The size of the central maxima would get halved when the width of the slit is doubled.
71. The complete path is shown in the figure.

Let a spherical refracting surface XY separate a rarer medium of refractive index n1 from a denser medium of refractive index n2.
Let P be the pole, C be the centre and R = PC be the radius of curvature of this surface.
Consider a point object O lying on the principal axis of the surface.
Let ∠AOM = α, ∠AlM = β, ∠ACM = γ
As external angle of a triangle is equal to sum of internal opposite angles, therefore, in ΔIAC,
r+β=γ
r = γ - β ....(i)
Similarly, in ΔOAC , i = α + γ ...(ii)
According to Snell's law,
n2

n1
=
sin i
=
sin r
...(ii) (∵ angles are small)
i

∴ n1i = n2r
Using (i) and (ii), we obtain
n1 (α + γ) = n2 (γ − β)

As angles α , β and γ are small, and applying trigonometric functions, we obtain

AM AM AM AM
∴ n1 (
MO
+
MC
) = n2 (
MC
−
MI
) ...(iii)
As aperture of the spherical surface is small, M is close to P. Therefore, MO ≈ PO, MI ≈ PI, MC ≈ PC
From (iii),
1 1 1 1
n1 ( + ) = n2 ( − )
PO PC PC PI

n1 n2 n2 − n1
∴ + =
PO PI PC

Using new Cartesian sign conventions, we put

PO = -u, PI = +v, PC = R
n1 n2 n2 − n1
+ =
−u v R

This is the required relation.

Now, f ∝ (from lens maker formula)
1

μ−1

As a wavelength of incident light increases, μ decreases. Hence, the focal length f increases.

21 / 21