Scribd
Upload
43 views22 pages

Chapter 2a Power Diodes

The document discusses power electronic devices, focusing on power diodes and their characteristics. It outlines the classification of power electronics, the structure and operational requirements of power diodes, and their switching characteristics. Additionally, it compares different types of diodes, including Schottky, Fast Recovery, and Line Frequency diodes, highlighting their applications and performance metrics.

Uploaded by

elie.mukongo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
43 views22 pages

Chapter 2a Power Diodes

The document discusses power electronic devices, focusing on power diodes and their characteristics. It outlines the classification of power electronics, the structure and operational requirements of power diodes, and their switching characteristics. Additionally, it compares different types of diodes, including Schottky, Fast Recovery, and Line Frequency diodes, highlighting their applications and performance metrics.

Uploaded by

elie.mukongo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 22

BEE4101 POWER ELECTRONICS

Power Electronic Devices

Power Diodes

Chapter 2a

1
Lecture Outline

2
Power Electronic Devices
• The power Electronic devices provides the
utility of switching.

• The flow of power through these devices can


be controlled via small currents.

• Power electronics devices differ from ordinary


electronics devices in terms of their
characteristics.
3
Power Electronic Devices
• Power Electronics Devices can be classified
into three groups according to their degree of
controllability.

– Diodes (on and off controlled by power circuit)


– Thyristors (latched on by control signal but must
be turned off by power circuit)
– Controllable Switches (turned on and off by
control signal)

4
Diode
• A p-n junction diode is formed by placing p and n
type semiconductor materials in intimate contact
on an atomic scale.
Diode Characteristics

6
Diode Equation
𝑞𝑣
𝐼𝐹 = 𝐼𝑠 𝑒 𝑘𝑇 −1

Where,
Is = Reverse saturation current ( Amps)
v = Applied forward voltage across the device (volts)
q = Change of an electron
k = Boltzmann's constant
T = Temperature in Kelvin

7
Power Diode
• Power semiconductor diode
is the “power level” counter
part of the “low power
signal diodes”.

• The symbol of the Power


diode is same as signal level
diode. However, the
construction and packaging
is different.

8
Power Diode
• Power dides are required to carry up to several KA of current
under forward bias condition and block up to several KV under
reverse biased condition.

• Large blocking voltage requires wide depletion layer.

• This requirement will be satisfied in a lightly doped p-n


junction diode of sufficient width to accommodate the
required depletion layer.

• Such a construction, however, will result in a device with high


resistively in the forward direction.

• If forward resistance (and hence power loss) is reduced by


increasing the doping level, reverse break down voltage will
reduce.
9
Power Diode
• These extreme requirements call for important structural changes
in a power diode which significantly affect their operating
characteristics.
• This apparent contradiction in the requirements of a power diode
is resolved by introducing a lightly doped “drift layer” of required
thickness between two heavily doped p and n layers.

10
Switching Characteristics of Power Diodes
• Power Diodes take finite time to make transition from reverse bias
to forward bias condition (switch ON) and vice versa (switch OFF).

• Behavior of the diode current and voltage during these switching


periods are important due to the following reasons.

– Severe over voltage / over current may be caused by a diode switching


at different points in the circuit using the diode.

– Voltage and current exist simultaneously during switching operation of


a diode. Therefore, every switching of the diode is associated with
some energy loss. At high switching frequency this may contribute
significantly to the overall power loss in the diode.

11
Turn On Characteristics
• Diodes are often used in
circuits with di/dt limiting
inductors.

• The rate of rise of the


forward current through
the diode during Turn ON
has significant effect on
the forward voltage drop
characteristics.

12
Turn On Characteristics
• It is observed that the forward
diode voltage during turn ON
may transiently reach a
significantly higher value Vfr
compared to the steady slate
voltage drop at the steady
current IF.

• Forward recovery time, tFR is


the time required for the diode
voltage to drop to a particular
value after the forward current
starts to flow.
13
Turn Off Characteristics
• The diode current does not
stop at zero, instead it grows
in the negative direction to Irr
called “peak reverse recovery
current” which can be
comparable to IF.

• Voltage drop across the diode


does not change appreciably
from its steady state value till
the diode current reaches
reverse recovery level.

14
Turn Off Characteristics
• The reverse recovery
characteristics shown is
typical of a particular type
of diodes called “normal
recovery” or “soft
recovery” diode.
• The total recovery time (trr)
in this case is a few tens of
microseconds.

15
Turn Off Characteristics
• This is acceptable for line frequency rectifiers (these diodes
are also called rectifier grade diodes).

• High frequency circuits (e.g PWM inverters) demand faster


diode recovery.

16
Types of Diodes
• Depending on the application requirement various
types of diodes are available.

– Schottky Diode

– Fast Recovery Diode

– Line Frequency Diode


Types of Diodes
– Schottky Diode

– These diodes are used where a low forward voltage drop


(typically 0.3 v) is needed.

– These diodes are limited in their blocking voltage


capabilities to 50v- 100v.
Types of Diodes
– Fast Recovery Diode

– These diodes are designed to be used in high frequency


circuits in combination with controllable switches where
a small reverse recovery time is needed.

– At power levels of several hundred volts and several


hundred amperes such diodes have trr rating of less than
few microseconds.
Types of Diodes
– Line Frequency Diode

– The on state of these diodes is designed to be as low as

possible.

– As a consequence they have large trr, which are

acceptable for line frequency applications.


Comparison between different types
of Diodes

General Purpose Fast Recovery Schottky Diodes


Diodes Diodes
Up to 6000V & Up to 6000V and Up to 100V and
3500A 1100A 300A
Reverse recovery Reverse recovery Reverse recovery
time – High time – Low time – Extremely
low.
trr  25 s trr = 0.1s to 5s trr = a few nano sec

21
Comparison between different types
of Diodes

General Purpose Fast Recovery Schottky Diodes


Diodes Diodes
Turn off time – Turn off time – Low Turn off time –
High Extremely low
Switching Switching Switching
frequency – Low frequency – High frequency – Very
(Max 1KHz) (Max 20KHz) high.
(Max 30KHz)
VF = 0.7 to 1.2V VF = 0.8 to 1.5V VF  0.4 to 0.6V
22

You might also like