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Silicon Rectifier Diode

The experiment aimed to investigate the properties of a Silicon Rectifier Diode by measuring current at varying voltages. Results showed that current remained at 0 until a potential difference of 0.85V was reached, where it increased rapidly, indicating the typical barrier potential. The analysis revealed that the diode's resistance decreases exponentially as current increases, with a calculated resistance of 4.25 Ω at 0.85V.

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6 views2 pages

Silicon Rectifier Diode

The experiment aimed to investigate the properties of a Silicon Rectifier Diode by measuring current at varying voltages. Results showed that current remained at 0 until a potential difference of 0.85V was reached, where it increased rapidly, indicating the typical barrier potential. The analysis revealed that the diode's resistance decreases exponentially as current increases, with a calculated resistance of 4.25 Ω at 0.85V.

Uploaded by

matthewcohen115
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment #3

Objective: To investigate the properties of a Silicon Rectifier Diode.


Apparatus: Ammeter, Voltmeter, Power Supply Unit, Diode Switch,
Potentiometer, Connecting Wires

Circuit Diagram:

Method:
1) A circuit was connected as shown above and the switch was switched
on.
2) The power supply was set to a suitable range(20v)
3) The circuit was utilized and the current was read for varying voltages
between 0.1v and 1.0 v by varying the length of potentiometer wire .

Table:
Potential Difference, Current I, A
V
0.1 0
0.2 0
0.3 0
0.4 0
0.5 0
0.6 0
0.7 0
0.8 0.1
0.9 0.3
1.0 0.5
Data analysis and results
1)A graph of I against V was Plotted.
2) Based on the graph :
a) As the p.d increased the current I remained at 0 until it reached 0.85
where it was was 0.1A.
b)The resistance of the diode decreases exponentially as the current
increased.
c) The resistance of the diode when p.d is 0.85V is 4.25 Ω

Because:
At 0.85v, I=0.2A
V
R=
I
0.85
=
0.2
=4.25 Ω

Precautions:
1)The Power supply was switched off between readings to reduce heat, which
affects the voltage reading due to increased resistance.
2)The number of significant figures were determined for precision in voltage.
3) The polarity of batteries were set up according to the diagram
4) The microampere scale was used for precision

Sources of Error:
Parallax error from incorrect viewing was minimized by ensuring the
ammeter was read directly in front of the system

Conclusion:
The Silicon Diode followed the typical barrier potential which is 0.7v, where
once exceeded the current increases rapidly . In this case it was found to be
0.85V
In analyzing the graph it was found that as the resistance of the diode
decreases exponentially as the p.d increases, reflecting an exponential
increase in current.

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