Subject: Solid State Devices and Circuits-I

Unit-IV Introduction to MOSFET

Q. No. 1 What is the MOSFET? What are the different types of MOSFET? Draw the symbol for
each.
Ans. The MOSFET (metal oxide semiconductor field-effect transistor) is another category of
field-effect transistor. The MOSFET, different from the JFET, has no pn junction structure;
instead, the gate of the MOSFET is insulated from the channel by a silicon dioxide (SiO2)
layer. The two basic types of MOSFETs are enhancement (E) and depletion (D). Of the
two types, the enhancement MOSFET is more widely used. Because polycrystalline silicon
is now used for the gate material instead of metal, these devices are sometimes called
IGFETs (insulated-gate FETs).
There are two types of MOSFET
1. Enhancement MOSFET (E-MOSFET): Further it is n-type and p-type enhance
MOSFET
2. Depletion MOSFET (D-MOSFET): Further it is n-type and p-type depletion MOSFET

n channel p channel n channel p channel

Figure 1.1 Enhance MOSFET Figure 1.2 Depletion MOSFET

Q. No. 2 Explain the working of n-channel Enhance type MOSFET.

Ans. The E-MOSFET operates only in the enhancement mode and has no depletion mode. It
differs in construction from the D-MOSFET that it has no structural channel. Notice in
Figure 2.1 (a) that the substrate extends completely to the SiO2 layer. For an n-channel
device, a positive gate voltage above a threshold value induces a channel by creating a thin
layer of negative charges in the substrate region adjacent to the SiO2 layer, as shown in
Figure 2.1 (b). The conductivity of the channel is enhanced by increasing the gate-to-source
voltage and thus pulling more electrons into the channel area. For any gate voltage below
the threshold value, there is no channel.

Class: S. E. (E & TC) Page 1

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET

(a) Basic construction (b) Induced channel (VGS > VGS(th))

Figure 2.1
Construction wise n-channel enhance MOSFET has two highly doped n region diffused in
lightly doped p type substrate. The source and drain are taken out through metallic contacts
to n-doped region as shown in figure 2.2 (b).
In detail, on application of drain to source voltage VDS and keeping gate to source voltage
zero by S.C. gate and source terminal. In this case no current flows which is just opposite
to that in the depletion type MOSFET and JFET. When voltage VGS is increased in positive
direction, concentration of electrons near SiO2 surface increase because of opposite
polarity. At certain magnitude of VGS there is sufficient numbers of electrons which cause
current to flow between drain and source. The value of V GS at which this current flows is
called threshold voltage denoted by VT. So In enhancement type n-channel MOSFET, by
applying positive gate voltage above threshold voltage a channel is induced which allows
the drain current to flow by creating thin layer of negative charge in the substrate region
adjacent to SiO2 layer as shown in figure 2.2 (b). To increase the conductivity of the
channel increase the gate to source voltage so that more electrons will be pull into the
induced channel. But below threshold voltage there is no channel. As there is no channel
exist at VGS=0 while it get enhance by applying positive gate to source voltage, this type
of MOSFET is referred as enhancement type MOSFET.

(a) Construction of enhance MOSFET (b) Working of enhance MOSFET

Figure 2.2

Class: S. E. (E & TC) Page 2

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET
Q. No. 3 Draw the drain and transfer characteristics of n-channel MOSFET and explain it.
Ans. Drain characteristics: Drain characteristics is the graph between VDS and ID with fixed
value of VGS. Figure 3.1 (a) shows the drain characteristics for n-channel enhance
MOSFET. As seen from the characteristics, increase in VGS above threshold causes
increase in the density of free carriers (electrons) in the induced channel. This results in
increase in drain current but after certain voltage it reach to saturation level which is due
to pinch off process similar to JFET.
Transfer Characteristics: It is the graph between VGS and ID which gives the value of
pinch-off voltage at particular value of ID. Figure 3.1 (b) shows the transfer characteristics
for n-channel MOSFET. The characteristics is different from n-channel JFET and depletion
type MOSFET, as it is in positive region of V GS. The value of VGS at which ID start flowing
is threshold voltage i. e. till VGS is below the threshold value drain current does not flow.
When VGS>VT the relation between drain current and VGS is nonlinear and is given by
equation
I D  K VGS  VT 2
Where K is a constant and it is the function of the construction of the device and its value
is given as
I D ON 
K
 
VGS ON   VT 2

(a) Drain characteristics (b) Transfer characteristics

Figure 3.1

Q. No. 4 Explain the working of p-channel Enhance type MOSFET.

Ans. The E-MOSFET operates only in the enhancement mode and has no depletion mode. It
differs in construction from the D-MOSFET that it has no structural channel. Notice in
Figure 4.1 (a) that the substrate extends completely to the SiO2 layer. For an p-channel
device, a negative gate voltage above a threshold value induces a channel by creating a thin
layer of positive charges in the substrate region adjacent to the SiO2 layer, as shown in
Figure 4.1 (b). The conductivity of the channel is enhanced by increasing the gate-to-source
voltage and thus pulling more holes into the channel area. For any gate voltage below the
threshold value, there is no channel.

Class: S. E. (E & TC) Page 3

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET

(a) Basic construction (b) Induced channel (VGS > VGS(th))

Figure 4.1
Construction wise p-channel enhance MOSFET has two highly doped p region diffused in
lightly doped n type substrate. The source and drain are taken out through metallic contacts
to n-doped region as shown in figure 4.1 (a).
In detail, on application of drain to source voltage VDS and keeping gate to source voltage
zero by S.C. gate and source terminal. In this case no current flows which is just opposite
to that in the depletion type MOSFET and JFET. When voltage VGS is increased in negative
direction, concentration of holes near SiO2 surface increase because of opposite polarity.
At certain magnitude of VGS there is sufficient numbers of holes which cause current to
flow between drain and source. The value of VGS at which this current flows is called
threshold voltage denoted by VT. So In enhancement type p-channel MOSFET, by applying
negative gate voltage above threshold voltage a channel is induced which allows the drain
current to flow by creating thin layer of positive charge in the substrate region adjacent to
SiO2 layer. To increase the conductivity of the channel increase the gate to source voltage
so that more holes will be pull into the induced channel. But below threshold voltage there
is no channel. As there is no channel exist at VGS=0 while it get enhance by applying
negative gate to source voltage, this type of MOSFET is referred as enhancement type
MOSFET. Figure for the working of p-channel enhance MOSFET is same as that shown
in figure 2.2 (b) with change in polarities of gate to source and source to drain dc supply
and in place of electrons there will be holes in the induced channel and negative charge in
the substrate region adjacent to SiO2 layer.

Figure 4.2 Construction of enhance MOSFET

Class: S. E. (E & TC) Page 4

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET
Q. No. 5 Draw the drain and transfer characteristics of p-channel MOSFET and explain it.
Ans. Drain characteristics: Drain characteristics is the graph between VDS and ID with fixed
value of VGS. Figure 5.1 (a) shows the drain characteristics for p-channel enhance
MOSFET. As seen from the characteristics, increase in VGS above threshold causes
increase in the density of free carriers (holes) in the induced channel. This results in
increase in drain current but after certain voltage it reach to saturation level which is due
to pinch off process similar to JFET.
Transfer Characteristics: It is the graph between VGS and ID which gives the value of
pinch-off voltage at particular value of ID. Figure 5.1 (b) shows the transfer characteristics
for p-channel MOSFET. The characteristics is different from p-channel JFET and depletion
type MOSFET, as it is in negative region of VGS. The value of VGS at which ID start flowing
is threshold voltage i. e. till VGS is below the threshold value drain current does not flow.
It is the mirror image of transfer characteristics of n-channel because VGS is negative here.
When VGS>VT the relation between drain current and VGS is nonlinear and is given by
equation
I D  K VGS  VT 2
Where K is a constant and it is the function of the construction of the device and its value
is given as
I D ON 
K
 
VGS ON   VT 2

(a) Drain characteristics (b) Transfer characteristics

Figure 5.1

Q. No. 6 Explain the construction and working of n-channel Depletion type MOSFET.
Ans. It is another type of MOSFET called depletion MOSFET (D-MOSFET), Figure 6.1
illustrates its basic structure. The drain and source are diffused into the substrate material
and then connected by a narrow channel adjacent to the insulated gate. The p-channel
operation is the same, except the voltage polarities are opposite those of the n-channel. The
D-MOSFET can be operated in either of two modes—the depletion mode or the
enhancement mode—and is sometimes called a depletion/enhancement MOSFET. Since
the gate is insulated from the channel, either a positive or a negative gate voltage can be
applied. The n-channel MOSFET operates in the depletion mode when a negative gate-to-
source voltage is applied and in the enhancement mode when a positive gate-to-source

Class: S. E. (E & TC) Page 5

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET
voltage is applied. These devices are generally operated in the depletion mode. While the
p-channel MOSFET operates in the depletion mode when a positive gate-to-source voltage
is applied and in the enhancement mode when a negative gate-to-source voltage is applied.
These devices are generally operated in the depletion mode.

Figure 6.1
Basic construction of n-channel depletion type MOSFET is shown in figure 6.1. Two
highly doped n-region are diffused in lightly doped p-region called substrate. The two
highly doped n-regions are Source and Drain. In some MOSFET substrate is internally
connected to source terminal. Mettalic contacts are used to connect source and drain region.
Source and Drain is linked by n-channel. The Gate is also connected to a metal contact but
it is isolated from n-channel by a very thin layer of dielectric material called Silicon dioxide
(SiO2). So there is no direct electrical connection between the gate terminal and the channel
of a MOSFET, this increase the input imedance of MOSFET.
When drain to source voltage VDS is applied and gate to source voltage is kept zero by
directly connecting gate terminal to source, free electrons from the n-channel are attracted
toward positve terminal of battery which is connected to drain terminal. This produce the
current through the channel and it is denoted by IDSS which is at VGS=0. This action is
shown in figure 6.2 (a).

(a) (b)
Figure 6.2
Now if negative gate voltage is applied, then negative gate charge will repel electrons from
channel and will attract holes from the p-type subtract. This result in the recombination of
repelled electrons and attracted holes. This is shown in figure 6.2 b. The level of

Class: S. E. (E & TC) Page 6

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET
recombination depends on the magnitude of the negative voltage applied at the gate. This
.recombination reduces the number of free electrons in the n channel for conduction and
hence reduces the drain current. In other word, due to recombination n channel is depleted
of some of its electrons. This result in decrease in the channel conductivity. Depletion layer
increases with increase in negative voltage at gate. So the drain current decreases with
increase in negative VGS. This is shown transfer characteristics in figure 6.3 (a). Reverse
process take place when positive VGS is applied. Due to positive value of VGS, additional
electrons are drawn from p type substrate due to reverse leakage current and produce new
carriers due to collision between accelerating particles. Due to this drain current increases
with increase in VGS in positive direction. This is shown in figure 6.3 (b). AS positive gate
to source voltage enhance the level of free carriers in the channel as compare to V GS=0,
hence the region of positive gate voltage on the transfer characteristic is called
enhancement region and the region between cutoff and saturation level of I DSS is called
depletion region. Figure 6.3 (b) shows the drain characteristics of n channel depletion type
MOSFET. It is same as that of JFET only difference is that, here V GS is positive.

(a) (b)
Figure 6.3
Q. No. 7 Explain the construction and working of p-channel Depletion type MOSFET.
Ans. The construction of p channel MOSFET I s exactly opposite to p-channel depletion type
MOSFET. Here substrate is of n-type and region and channel is of p-type as shown in
figure 7.1

(a) (b)
Figure 7.1

Class: S. E. (E & TC) Page 7

Prepared by: BOHARI H. Y.
 Subject: Solid State Devices and Circuits-I
Unit-IV Introduction to MOSFET
As seen from figure 7.1 (b), voltage polarities and current directions are reversed. The drain
characteristics is exactly same as that of n-channel but VDS with negative values, ID in the
opposite direction and VGS having opposite polarities. Figure 7.1 (b) shows the transfer
characteristics of p-channel depletion type. It is mirror image of n-channel depletion type
MOSFET about Y-axis. It is because VGS is positive in –channel.

Class: S. E. (E & TC) Page 8

Prepared by: BOHARI H. Y.