DIGITRON SEMICONDUCTORS

MAC228(A) SERIES SILICON BIDIRECTIONAL THYRISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, ½ sine wave, 50 to 60 Hz, gate open)
MAC228-2, MAC228A-2 50
MAC228-3, MAC228A-3 100
MAC228-4, MAC228A-4 200
MAC228-5, MAC228A-5 VDRM 300 Volts
MAC228-6, MAC228A-6 400
MAC228-7, MAC228A-7 500
MAC228-8, MAC228A-8 600
MAC228-9, MAC228A-9 700
MAC228-10, MAC228A-10 800
RMS on-state current (TC = 80°C, full cycle sine wave 50 to 60Hz) IT(RMS) 8 Amps
Peak non-repetitive surge current
ITSM Amps
(1 cycle, 60 Hz, TJ = 110°C) 80
Circuit fusing considerations (t = 8.3ms) I2t 26 A2s
Peak gate current (t ≤ 2µs) IGM ±2.0 Amps
Peak gate voltage (t ≤ 2µs) VGM ±10 Volts
Peak gate power (t ≤ 2µs) PGM 20 Watts
Average gate power (TC = 80°C, t = 8.3ms) PG(AV) 0.5 Watts
Operating junction temperature range TJ -40 to +110 °C
Storage temperature range Tstg -40 to +150 °C
Mounting torque 8.0 In. lb.
Note 1: VDRM or VRRM for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.

THERMAL CHARACTERISTICS
Characteristic Symbol Maximum Unit
Thermal resistance, junction to case RӨJC 2.2 °C/W
Thermal resistance, junction to ambient RӨJA 60 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic Symbol Min Typ. Max Unit
Peak blocking current
(VD = Rated VDRM @ TJ = 25°C) IDRM - - 10 µA
(VD = Rated VDRM @ TJ = 110°C) - - 2 mA
Peak on-state voltage
VTM Volts
(ITM = 11A peak, pulse width ≤ 2 ms, duty cycle ≤ 2%) - - 1.8
Gate trigger current (continuous dc)
(VD = 12V, RL = 12Ω)
IGT mA
(MT2(+),G(+); (MT2(+),G(-); (MT2(-),G(-) - - 5.0
(MT2(-),G(+) “A” suffix only - - 10
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) - - 2.0
MT2(-),G(+) “A” suffix only VGT - - 2.5 Volts
(VD = Rated VDRM, RL = 10kΩ, TC = 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(- 0.2 - -
MT2(-),G(+) “A” suffix only 0.2 - -
144 Market Street phone +1.908.245-7200 [email protected]
Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130130
 DIGITRON SEMICONDUCTORS
MAC228(A) SERIES SILICON BIDIRECTIONAL THYRISTORS

Characteristic Symbol Min Typ. Max Unit

Holding current
IH mA
(VD = 12V, gate open, ITM = 200mA) - - 15
Gate controlled turn on time
tgt µs
(VD = Rated VDRM, ITM = 16A peak, IG = 30mA) - 1.5 -
Critical rate of rise of off-state voltage
dv/dt V/µs
(VD = Rated VDRM, exponential waveform, TC = 110°C) - 25 -
Critical rate of rise of commutation voltage
(VD = Rated VDRM, ITM = 11.3A, commutating di/dt = 4.1A/ms, gate unenergized, dv/dt(c) - 5 - V/µs
TC = 80°C)

MECHANICAL CHARACTERISTIC
Case TO-220AB
Marking Body painted, alpha-numeric
Pin out See below

TO-220AB
Inches Millimeters
Min Max Min Max
A 0.575 0.620 14.600 15.750
B 0.380 0.405 9.650 10.290
C 0.160 0.190 4.060 4.820
D 0.025 0.035 0.640 0.890
F 0.142 0.147 3.610 3.730
G 0.095 0.105 2.410 2.670
H 0.110 0.155 2.790 3.930
J 0.014 0.022 0.360 0.560
K 0.500 0.562 12.700 14.270
L 0.045 0.055 1.140 1.390
N 0.190 0.210 4.830 5.330
Q 0.100 0.120 2.540 3.040
R 0.080 0.110 2.040 2.790
S 0.045 0.055 1.140 1.390
T 0.235 0.255 5.970 6.480
U - 0.050 - 1.270
V 0.045 - 1.140 -
Z - 0.080 - 2.030

144 Market Street phone +1.908.245-7200 [email protected]

Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130130
 DIGITRON SEMICONDUCTORS
MAC228(A) SERIES SILICON BIDIRECTIONAL THYRISTORS

144 Market Street phone +1.908.245-7200 [email protected]

Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130130