IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO.

6, JUNE 2023 2625

Efficient Synthesis of Angular Selective Surfaces

Based on Accurate Equivalent Circuit Analysis
Tao Qin , Student Member, IEEE, Xian Qi Lin , Senior Member, IEEE, Yao Yao , Yong Liu, Member, IEEE,
Hao Liu , Member, IEEE, Peng Hao , Member, IEEE, and Peng Mei , Member, IEEE

Abstract— A new efficient synthesis method of angular selective machine learning technologies are already applied in related
surfaces (ASSs) based on the accurate equivalent circuit model designs [11], [12], [13], [14], [15]. However, there has been
is proposed. The angular dispersion of different components little discussion on angular selective surfaces (ASSs), or spatial
under oblique incidence is modeled by virtual lumped elements
in the angular domain. The processes of obtaining the equivalent filters with an engineered response dependent on the incidence
circuit for substrates, electrically small grids and patch arrays angle, and only a few papers have ever touched on this topic
are presented in detail. The synthesized circuits are simple and [16], [17], [18], [19], [20], [21], [22], [23], [24]. In 1976,
accurate. Full-wave simulations are carried out to obtain the Mailloux [16] proposed the first spatial filter and a synthe-
angular dispersion of different structures, and the calculated sis method based on a cascaded scatter matrix and stepped
results are in good agreement with those of the equivalent circuit.
A third-order ASS with bandpass response and a second-order impedance transmission line filter. Consisting of several high
ASS with a tunable bandwidth are given as design examples. The permittivity substrates, this spatial filter has a synthesized
implemented second-order ASS shows the 0.33 to 0.52 tunable Chebyshev response. In [17], a spatial filter is designed with
bandwidth in the angular domain. The transmission loss is better cascaded metal grids and air spacers in between. It is used
than 1.2 dB when the incidence angle is 65◦ –77◦ . The simulation to suppress antenna side lobes, in which the spatial response
results and calculated results are in good agreement with the
measured results. of the grid array is analyzed using spatial harmonics. In [18]
and [19], a spatial filter comprised of substrate-supersaturates
Index Terms— Angular selective surface (ASS), equivalent is used to enhance the antenna gain. A third-order spatial
circuit, frequency selective surface, meta-surface, spatial angular
filter. filter based on a third-order frequency filter is presented in
[20] where the spatial filtering response is directly derived
from the frequency domain. In [21], a multilayer dielectric
I. I NTRODUCTION
angular filter is used to suppress the grating lobes of a patch

I N THE past decades, there has been considerable interest in

frequency selective surface (FSS), for its versatility enables
integration into all kinds of modern systems [1], [2], [3], [4],
antenna array, reducing grating lobes by 15–30 dB. Recently,
a spatial angular filter based on a single-layer interconnected
split-ring-resonators (SRRs) has been proposed in [22], greatly
[5]. An invariant response over different incidence angles is reducing the thickness of the filter compared with other
always desired in most applications with a whole host of designs [25].
efforts to this end [6], [7], [8], [9], [10]. Detailed equiva- However, many of these syntheses or design methods pre-
lent circuit analysis, well-developed filter synthesis and even sented in these papers still have some drawbacks. Specifi-
Manuscript received 13 September 2022; revised 30 November 2022; cally, the angular dispersion of the high dielectric substrates
accepted 17 December 2022. Date of publication 6 January 2023; date of in [17] is considered to be negligible and excluded in the
current version 5 June 2023. This work was supported in part by the National design process; the relationship between incidence angle and
Natural Science Foundation of China under Grant U1966201; in part by
the Fundamental Research Funds for the Central Universities under Grant frequency domain in [20] limited the design freedom; the
ZYGX2021J008; in part by the Scientific Research Foundation for the Yangtze cascaded scattering matrix used in [17] and [19], however,
Delta Region Institute, University of Electronic Science and Technology of needs to be applied to the whole structure, but this would make
China, Huzhou, under Grant U03210005; and in part by the China Scholarship
Council under Grant 202206070058. (Corresponding authors: Xian Qi Lin; the calculation cumbersome and difficult once the number of
Peng Mei.) layers is increased. In a word, due to an absence of accurate
Tao Qin is with the School of Electronic Engineering, University of circuit models comprised of transmission lines and equivalent
Electronic Science and Technology of China, Chengdu 611731, China, also
with the Yangtze Delta Region Institute (Huzhou), University of Electronic lumped components related to the incidence angles, there is
Science and Technology of China, Huzhou 313001, China, and also with the still a lack of a universal and direct spatial filter or ASS design
Department of Electrical and Information Technology (EIT), Lund University method.
(LU), 221 00 Lund, Sweden (e-mail: [email protected]).
Xian Qi Lin, Yao Yao, Yong Liu, Hao Liu, and Peng Hao are with the School In this article, the accurate equivalent circuits of several
of Electronic Engineering, University of Electronic Science and Technology fundamental cells are examined to address the above problems.
of China, Chengdu 611731, China, and also with the Yangtze Delta Region We present a new efficient synthesis method of ASSs based
Institute (Huzhou), University of Electronic Science and Technology of China,
Huzhou 313001, China (e-mail: [email protected]). on the accurate equivalent circuit model, in which the angular
Peng Mei is with the Department of Electronic Systems, Aalborg University, dispersion of reactance and susceptance in the FSS structure is
9220 Aalborg, Denmark (e-mail: [email protected]). represented by virtual capacitors or inductors, or their combi-
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/TMTT.2022.3232109. nations. Since these virtual capacitors and inductors are math-
Digital Object Identifier 10.1109/TMTT.2022.3232109 ematical objects with no physical restrictions, the capacitance
0018-9480 © 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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2626 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Fig. 1. Function of the proposed ASS. Different transmission characteristics

can be obtained under different incidence angles, such as the bandpass
response.

and inductance can be negative, which allows the non-Foster

behavior of the angular dispersion functions. Good consis-
tencies are obtained between the theoretical calculation and
simulation results in the whole process of analysis. A second-
order ASS with a tunable bandwidth and a third-order ASS are
demonstrated as design examples. Fig. 1 shows the function of
this novel spatial ASS. Different transmission characteristics
can be obtained under different incidence angles. On the basis
of the existing literature, the major contributions of our work
are summarized as follows.
1) Accurate equivalent circuit models of the basic FSS cells
in the angular domain are presented. During the whole analysis
process, the theoretical calculation is in good agreement with
the simulation results, which not only guarantees solution
accuracy but also greatly reduces the computational load. The
angular dispersion of the FSS can then be analyzed or syn-
thesized using simple methods or pure numerical optimization
that have already been developed in the circuits.
2) Electromagnetic properties of the proposed ASS are
the function of the incidence angle, not the function of the
electrical frequency. The ASS with such properties makes it
a potential device in secure communications, radome design,
energy harvesting, spatial multiplexing, and anti-interference
Fig. 2. Unit cell of an FSS and its equivalent circuits in the frequency
at a specific incidence angle. Based on this, a second-order domain and the angular domain. (a) Unit cell of a general FSS under the TE
ASS with tunable bandwidth in the angular domain is syn- incidence wave. (b) Equivalent circuits in the frequency domain and angular
thesized, fabricated and measured. And bandwidth tuning domain where the operating frequency is set and renormalization is employed.
(c) Impedance of basic components in the frequency domain and the angular
is realized directly by adjusting the distance between the domain, respectively.
substrates.
This article is organized as follows. Section II defines the
angular function in the angular domain and the necessary metallic patterns on both sides and one or more air spacers
renormalization process involved. In Section III, the equivalent between them. A plane wave propagates at an arbitrary angle
circuits in the angular domain of substrates, electrically small θ with respect to the negative Z -direction in the X O Z plane.
grids, and patches are summarized and verified numerically. In this setting, the electric field of the TE incidence wave
The design procedure and the two examples are demon- will be polarized along the Y -axis, while the magnetic field of
strated in Section IV, and the experimental verification of the TM incidence wave is polarized along the X-axis. Some
the second-order ASS with tunable bandwidth is presented in reasonable assumptions needed for further discussion are given
Section V. Section VI discusses the responses of these designs below.
in the frequency domain. Conclusions and further discussions 1) The unit cell of the FSS has a much smaller periodic D
are drawn in Section VII. than the wavelength in free space at the frequency of interest,
so only basic Floquet modes are presented in the reflected
and transmitted waves, i.e., TE00 for TE incidence and TM00
II. A NGULAR D OMAIN AND N ORMALIZATION for TM incidence. Higher modes are evanescent and decay
Fig. 2(a) shows the unit cells of a general FSS with exponentially from the cells [26], [27], [28].
the periodical structure in the X OY plane, which can be 2) There is no cross-polarization component between the
comprised of, for example, multiple substrates with etched reflected and transmitted waves, which is appropriate for

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QIN et al.: EFFICIENT SYNTHESIS OF ASSs BASED ON ACCURATE EQUIVALENT CIRCUIT ANALYSIS 2627

planar passive FSS and electrically small periodic structures is perpendicular to the selective surface. However, in order to
[1], [29]. establish an effective synthesis method in the angular domain,
3) The FSS is homogeneous in both X- and Y -directions and a much more accurate model is required.
the geometric dimensions of the elements in the same layer Given that the renormalization of the impedance does not
are identical and not scaled so that no phase gradient occurs affect the scattering parameters of transmission lines [30], [31],
across the surface, ensuring that the reflection and transmission a normalization is adopted firstly. Then, the port impedance
angles remained at −θ and θ , respectively [2], [26], [27]. becomes 1 , but the values of these shunt components are
According to these assumptions, the frequency domain still functions of both θ and f . Once the operating frequency
equivalent circuit shown in Fig. 2(b) can be used to study the is fixed, values of all these components are functions of θ . And
multilayer FSS’s behavior under different incidence angles. the equivalent circuit in the angular domain is finally obtained.
In this circuit, the shunt components represent the metallic For a better understanding of the relationship between the
patterns and the transmission lines represent substrates or angular domain and the frequency domain, Fig. 2(c) shows
air spacers. The port impedance of this two-port network is several basic elements and their equivalent impedance in
the Floquet modal impedance corresponding to the incidence these two domains. In the frequency domain, the normalized
wave, which is analyzed in this article. The TEz modal port impedance is usually 1  in the equivalent circuits of
fields, for example, have no electric field component along filter synthesis. The equivalent impedance of an inductor with
z by definition. The TEz modal field components can be inductance L is j ωL, which is only related to the operating
→
−
generated from an electric vector potential F that has only a frequency f (or 2π f ) and the value of L. In the angular
z-component. It can be expressed as [26] domain, after the previous normalization, the port impedance
→
−   is 1, and the equivalent impedance of the same inductor
F = ẑ A exp − j kxmn x − j kymn y − j k zmn z (1) becomes j cos θ L, which is related to the value of incidence
where A is a constant related to the amplitude, which is not angle θ (or cos θ ) and L. But, when focusing on the response
discussed here. kxmn and kymn are the mode numbers for the function of these elements or their combinations, classical
TEz Floquet mode. The symbol (m, n) is used to represent theories such as filter theory and even-odd mode analysis
either the TEz or the TMz Floquet modes. can be reasonably applied in both the frequency domain and
As mentioned in the former assumptions, only the basic angular domain. Simply speaking, normalization and fixed
Floquet modes are presented here. For m = n = 0, k x00 , frequency are the transformations of these two domains. The
k y00 are equal to the phase constants related to the intended renormalization method discussed here will be adopted in
radiation direction, which are given by the following analyzes, and the operating frequency of all
the proposed designs will be fixed at 10 GHz. Notably, for
k x00 = k0 sin θ cos φ (2a) propagating plane waves, the angular function cos θ is confined
k y00 = k0 sin θ sin φ (2b) to [0, 1], corresponding to θ in [0◦ , 90◦ ].
where k0 is the wavenumber in free space, and (θ, φ) is the
intended radiation direction in the spherical coordinate system. III. E QUIVALENT C IRCUITS OF THE BASIC FSS
Then the wavenumber along z is obtained as C ELLS IN THE A NGULAR D OMAIN
 A. Free Space Filled With Dielectric
k z00 = k02 − k x00
2
− k 2y00 = k0 cos θ. (3)
Some basic FSS cells, i.e., free spaces filled with dielectrics,
Therefore the modal impedance for TE00 can be expressed metallic patches, and grids on the substrate, are discussed in
as this part. The detailed process of obtaining equivalent circuits
−   →
→   − in the angular domain is given and the numerical validation is
E | j ωμ|−∇ × F  η0
= − =  carried out.
→ = cos θ
TE
Z 00 (4)
→   − Consider the substrate with relative permittivity εr under the
H ∇ × −∇ × F 
incidence wave as shown in Fig. 3(a), θ is the incidence angle
where ω is the angular frequency, μ is the permeability, and in the free space and ϕ is the refracted angle in the substrate,
η0 is the free-space impedance, which is equal to 120π . which can be defined from Snell’s law [32]
The modal impedance of TM00 obtained by using magnetic  
vector potential and similar procedures is given by εr − sin 2 θ εr − 1 + cos2 θ
cos ϕ = = . (6)
TM
Z 00 = η0 cos θ. (5) εr εr

Equations (4) and (5) indicate that when analyzing equiv- The wavenumber in the substrate kd is given by
alent circuits of FSSs in the frequency domain, the port √ √
kd = 2π f εr ε0 μ0 = k0 εr . (7)
impedance is only a function of θ and independent of f .
But for the shunt components introduced by metal patterns Since the homogeneous media and characteristics are dis-
as shown in Fig. 2(b), these parameters are generally the cussed along the direction perpendicular to the interface,
functions of both incidence angle and operating frequency. +z-direction here, the substrate between the two reference
In most of the existing FSS analyzes and designs, the incidence planes TT is equivalent to a section of the transmission line
angle is usually fixed at around 0◦ , that is, the incidence wave as shown in Fig. 3(b). The characteristic impedance of this

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2628 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

the following conditions:

−1
= j Z dz sin θz (13a)
Y12
cos θz − 1
Y12 + Y11 = . (13b)
j Z dz sin θz
Importantly, when β0 l(εr )1/2 cos ϕ ≤ π/18, which means an
infinitesimally thin slice of the substrate, (13) can be simplified
by substituting (6), (9), (11) and the following equivalent
infinitesimal:
sin x ∼0 x (14a)
cos2 x − 1 x
∼0 − . (14b)
sin x 2
Then, the simplified results are presented here.
For TE incidence wave
−1
= j cos θ β0l (15a)
Y12
Fig. 3. Equivalent circuits of free space filled with dielectric. (a) Substrate β0 l 1
under oblique incidence. (b) Transmission line model. (c) General pi-shape Y12 + Y11 = j cos θ + −2
. (15b)
network. (d) Normalized transmission line model. (e) Under the TE incidence 2 j cos θ (εr −1)β 0l
wave, it has a series inductor, two parallel capacitors, and two parallel
inductors. (f) Under the TM incidence wave, it has a series capacitor, a series For TM incidence wave
inductor and two parallel capacitors. −1 β0 l 1
= j cos θ + −εr (16a)
Y12 εr j cos θ (εr −1)β 0l
transmission line is equal to the modal impedance in the ε r β0 l
substrate, which can be expressed as Y12 + Y11 = j cos θ . (16b)
2
ηd η0
TE
Z dz = =√ (8a) According to (15), in the angular domain where values
cos ϕ εr cos ϕ of the equivalent elements are the functions of cos(θ ), the
η0 cos ϕ equivalent circuit of a substrate with relative permittivity εr
TM
Z dz = ηd cos ϕ = √ . (8b)
εr under the TE incidence wave, as shown in Fig. 3, has a series
The electric length of this transmission line is given by inductor, two parallel capacitors, and two parallel inductors,
√ and the capacitance and inductance are given as follows:
θz = βz l = (kd cos ϕ)l = β0 l εr cos ϕ (9)
s = β0 l
L TE (17a)
where (7) and the propagation constant in free space: β0 = k0 2
p = −
L TE (17b)
are substituted to simplify. (εr − 1)β0 l
Then, as shown in Fig. 3(d), the normalized ABCD matrix β0 l
is written as CpTE = . (17c)
2
⎡ ⎤
A B cos θ z j Z dz sinθ z According to (16), the equivalent circuit of a substrate with
=⎣ j ⎦ (10) relative permittivity εr under the TM incidence wave shown
C D sinθ z cos θ z
Z dz in Fig. 3, has a series inductor, a series capacitor, and two
parallel capacitors, and its capacitance and inductance are as
where
follows:
TE
Z dz cos θ
TE
Z dz = = √ (11a)
TE
Z 00 εr cos ϕ β10l
L TM = (18a)
TM
Z dz cos ϕ s
εr
TM
Z dz = TM = √ . (11b) εr
Z 00 εr cos θ CsTM = − (18b)
(εr − 1)β0 l
For further synthesis, considering a typical symmetric ε r β0 l
π-shape equivalent circuit shown in Fig. 3(c), its ABCD matrix CpTM = . (18c)
2
is given by
⎡ ⎤
A B − YY11 − Y112 B. Metallic Patches and Grid
= ⎣ Y2 ⎦.
12
(12)
C D − 11 + Y − Y11 Fig. 4 shows the electrically small patch array and its
Y12 12 Y12
complementary structure grid. As simple and basic cells in
The equivalence of these two circuits as shown in Fig. 3, FSS designs, plenty of works have focused on the analysis of
that is, (12) is equal to (10), can be achieved under their equivalent circuits in the frequency domain [29], [33],

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QIN et al.: EFFICIENT SYNTHESIS OF ASSs BASED ON ACCURATE EQUIVALENT CIRCUIT ANALYSIS 2629

Fig. 4. Geometry of the metallic grid and metallic patch on substrates.

(a) Array of patches in a homogeneous host medium. (b) Mesh of ideally
conducting strips in a homogeneous host medium. Metal parts are colored
black.

[34], [35], [36], [37], [38], [39], [40]. When the periodic D
is electrically small and w D, the shunt impedance of the
gird and patch can be given as follows.
For TE incidence wave [39]
ηeff
TE
Z grid = j α (19a)
2
ηeff Fig. 5. Summarized equivalent circuits in the angular domain of the basic
TE
Z patch = −j  . (19b) FSS cells under different polarization.
β 2 sin2 θ
2α 1 − 02β 2
eff

For TM incidence wave [39] For TM incidence wave

 
ηeff β02 sin2 θ TM β0 ζ 1
Z grid = j
TM
α 1− (20a) Z grid = j cos θ + (24a)
2 2
2βeff 2(εr + 1) j cos θ −2(ε r +1)
εr β0 ζ
η eff 1
TM
Z patch = −j . (20b) TM
Z patch = . (24b)
2α j cos θ (εr + 1)β0 ζ
Here, ηeff = η0 /(εeff )1/2 and βeff = β0 (εeff )1/2 refer to It can be seen in (22) that under the TE incidence wave,
the wave impedance and wavenumber in the effective host the grid shunt impedance is that of a positive inductor while
medium where the patch array or grid is located, respectively. the patch array has a conductance of a parallel capacitor and
A good approximation for the effective permittivity of the host a parallel negative inductor as shown in Fig. 5. The values of
medium εeff is given by εeff = (εr + 1)/2 [41]. α is a geometry the equivalent inductance and capacitance are
parameter defined as [42]
β0 ζ
βeff D grid =
L TE (25a)
2
α= 1
π   ∞    patch = −
L TE (25b)
1  (2i − 1) (2i + 1) βeff D 2i ε r β0 ζ
× ln + TE
= β0 ζ.
sin π2Dw i=1
22i−1 2π Cpatch (25c)
(21) It is apparent from (24) that under the TM incidence wave,
the grid shunt impedance is that of a series inductor and a
where is the Riemann zeta-function and the terms with series capacitor with a negative value, while the patch array
can be negligible when |βeff D| 2π [42]. has a conductance of a positive capacitor as shown in Fig. 5,
Equations (19) and (20) can be renormalized in the same and the capacitance and inductance are as follows:
way as mentioned previously, and the normalized shunt
impedance after mathematical processing are as follows. β0 ζ
grid =
L TM (26a)
For TE incidence wave 2(εr + 1)
2(εr + 1)
TE β0 ζ TE
Cgrid =− (26b)
Z grid = j cos θ (22a) ε r β0 ζ
2
TE 1
TE
Cpatch = (εr + 1)β0 ζ. (26c)
Z patch = (22b)
j cos θ β0 ζ + 1
j cos θ εr−1
β ζ
0

where C. Numerical Validation

  The aforementioned conclusions are summarized and listed
D 1
ζ = ln . (23) in Fig. 5. Numerical simulation is performed to validate the
π sin π2Dω obtained equivalent circuits.

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2630 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Fig. 6. Numerical validation of the equivalent circuits shown in Fig. 5. The simulation results obtained by the full-wave simulation are represented by the
solid lines without markers, while the calculated results obtained by the mathematical calculation are represented by pure markers. (a) Substrate under TE
incidence. (b) Patch under TE incidence. (c) Grid under TE incidence. (d) Substrate under TM incidence. (e) Patch under TM incidence. (f) Grid under TM
incidence.

The S-parameters of the substrates, the grid and the patch calculated results are represented by pure markers. Except
array are illustrated in Fig. 6. The relative permittivity of for tiny deviations, all these simulation results are in good
the lossless substrates used is 2 and the dimensions of the agreement with the calculated ones.
metallic patterns are D = 7 mm, w = 1 mm, h = 1 mm,
which means ζ = 0.123 for metallic patches and grids. The IV. D ESIGNING E XAMPLES AND P ROCEDURES
calculated elemental values under different conditions are also A. Equivalent Inverter Under TM Incidence Wave
given. To obtain the calculated results, circuit analysis and As shown in Fig. 5, the equivalent circuit of a substrate
matrix operations of microwave networks are adopted here. with relative permittivity εr under the TM incidence wave has
For example, for the metallic patch under TM polarization, a series capacitor with the negative value, a series inductor,
the cascaded ABCD matrix of the metallic patch and substrate and two parallel capacitors; the equivalent circuit of a patch
can be written as
 TM   TM  TM 
array under the TM incidence wave has a parallel capacitor
Atotal = Apatch Asub with a positive value. Therefore, an equivalent J-inverter under
   TM  TM  TM  TM polarization, as shown in Fig. 7(a), can be realized by a
= ATMpatchC ATM
subC2 A subC1 A subL A subC2 structure that is obtained by etching two same metallic patches
   on both sides of a substrate with high permittivity. Fig. 7(a)
0.978 − 0.022τ 2 j 0.105
τ
+ 0.105τ
=   (27) depicts the simplified equivalent circuit of the inverter in which
j 2.473τ − 0.051τ 3 0.757 − 0.243τ 2 the series inductance is negligible due to the high permittivity
where τ is the angular function (cos θ ). [ ATM of the substrate. The numerical validation of the inverter is
patchC ], [ A subC2 ],
TM
demonstrated in Fig. 7(b), and the physical dimensions are as
[ AsubC1 ], and [ AsubL ] are the ABCD matrix of corresponding
TM TM
follows: D = 3 mm, w = 0.29 mm, h = 1 mm, which means
equivalent elements shown in Fig. 5. Using the conversion
formulas between ABCD matrix and [S] matrix [31], the the value of the equivalent inverter is J = 1/5.29 cos θ and
the reflection zero occurs when cos θ = 0.189. As can be seen
calculated S-parameters can be obtained
in Fig. 7(b), the simulated results are in good agreement with
−2.06 + j 0.34τ + 46.59τ 2 + j 4.77τ 3 − τ 4 the calculated results. Additionally, Fig. 7(c) shows simulation
S11 =
−2.06 + j 34.13τ − 50.71τ − j 4.77τ 2 + τ 3 results of the same structure under TE incidence wave. Since
j 39.33τ its equivalent circuits are quite different from the one under the
S21 = . (28)
−2.06 + j 34.13τ − 50.71τ − j 4.77τ 2 + τ 3 TM incidence wave, there is no reflection zero in the angular
domain although good consistency between the simulation and
In Fig. 6, the simulation results obtained by the full-wave calculation is maintained. Sections IV–VI only discuss the
simulation using High Frequency Structure Simulator (HFSS) equivalent circuits and designs under TM polarization. The
are represented by the solid lines without markers, while the equivalent circuit under TE polarization can be obtained by

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QIN et al.: EFFICIENT SYNTHESIS OF ASSs BASED ON ACCURATE EQUIVALENT CIRCUIT ANALYSIS 2631

Fig. 8. Proposed ASS in the angular domain. (a) Layout. (b) Synthesis of
its equivalent circuits. Compared with State I, the series inductance of the
substrate and series capacitance of the air space are neglected reasonably
in States II and III. The equivalent J-inverter in the angular domain is also
employed here.

Fig. 7. Equivalent J-inverter in the angular domain. (a) Geometry and its
equivalent circuits. (b) Numerical validation under TM mode. The reflection the air spacer is reasonably ignored. Some of the equivalent
zero occurs when cos θ = 0.189. (c) Numerical validation under TE mode. parallel capacitors of the patch, the substrate, and the air
spacer constitute the parallel capacitor of the J-inverter. The
relationship among these equivalent elements is given as
referring to Fig. 5 and the relevant analysis method is basically
follows:
consistent with TM polarization.
Note that the equivalent inverter shown in Fig. 7(a) is
sensible and realizable only when −CsTM ≥ CpTM , which meets C1 = Cren1 = Cpatch
n1
+ Csubp
n1
+ Csubs
n1

the following condition: C2 = Cren2 = Cpatch

n2
+ Csubp
n1
+ Csubs
n1
+Cairp
n1

2 ...
β0 l ≤ . (29)
εr − 1 C7 = Cren7 = Cpatch
n7
+ Csubp
n4
+ Csubs
n4
+Cairp
n3

Besides, once the thickness and permittivity of the substrate C8 = Cren8 = Cpatch
n8
+ Csubp
n4
+ Csubs
4
are selected, the values of CsTM and CpTM are fixed, and the  
 1 
corresponding achievable inverter is determined. Ji =  ni , (i = 1, 2, 3, 4)
C cos θ 
stubs
nj
B. Examples One (Third-Order ASS) L j = L airs , ( j = 1, 2, 3). (30)
The structure and the equivalent circuits of the proposed
ASSs are presented in Fig. 8. As the permittivity of air is Substitute the equations from Fig. 5 and the dimensions
close to 1, the series capacitor in the equivalent circuit of shown in Fig. 8(a) into (30), the simplified values in the

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2632 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Fig. 10. Equivalent circuit of the proposed second-order passband ASS by

using the even-odd-mode analysis where TT is the symmetry plane.

TABLE III
S YNTHESIZED VALUES OF THE E QUIVALENT E LEMENTS D URING
THE S ECOND -O RDER ASS D ESIGN

Fig. 9. Numerical validation of the proposed third-order ASS. In State III, the
parallel inductance of the air spacer and the series inductance of the substrate
are ignored compared with State I.

TABLE I
S YNTHESIZED VALUES IN THE E QUIVALENT E LEMENTS
OF A T HIRD -O RDER S PATIAL ASS D ESIGN design is demonstrated in Fig. 9 with only small deviations
between the calculation and simulation. The passband of this
ASS is [0.08, 0.48] in the angular domain, corresponding to
the incidence angle of [61◦ , 84◦ ].

C. Examples Two (Second-Order Passband ASS With

TABLE II
Tunable Bandwidth)
P HYSICAL D IMENSIONS OF THE T HIRD -O RDER S PATIAL ASS
In the design process mentioned above, the equivalent
J-inverter is adopted, and those equivalent elements with neg-
ative values are absorbed into the inverter. However, since the
accurate equivalent circuits of the model have been obtained,
all these physical dimensions can be determined directly by
equivalent circuit are numerical optimization. The symmetrical structure shown in
ε 1 β0 h 1 ε1 Fig. 10 is adopted here, and the even-odd-mode analysis is
C1 = (ε1 + 1)ζ(D,w1 ) + − used to determine the resonant angular function.
2 β0 h 1 (ε1 − 1)
As for the odd-mode resonance, an equivalent electric wall
ε 1 β0 h 1 ε1 β0 h 2
C2 = (ε1 + 1)ζ(D,w2 ) + − + is inserted at the symmetry plane TT of the equivalent circuit
2 β0 h 1 (ε1 − 1) 2 shown in Fig. 10, and the one-port input admittance is derived
...
ε 4 β0 h 7 ε4 β0 h 6 as
C7 = (ε4 + 1)ζ(D,w7 ) + − + ⎛  −1 ⎞
2 β0 h 7 (ε4 − 1) 2 1 1
ε 4 β0 h 7 ε4 Yino = j ⎝τ C1 + + ⎠ (32)
C8 = (ε4 + 1)ζ(D,w8 ) + − n1
Csubs τ τ C2 − L n1 τ1−Y
  2 β0 h 7 (ε4 − 1) airs A

 (εi − 1)β0 h 2i−1  where τ is the angular function cos θ and

Ji =  , (i = 1, 2, 3, 4)
 εi cos θ    n2 2 n2 2 
1 C C τ
Lj = β0 h 2 j , ( j = 1, 2, 3) (31) = τ Csubs
n2
+ C3 −
subs airp
YA −1 + Csubs
n2 n2 2
Cairp τ + C4 Cairp
n2 2
τ
where ε1 , ε2 , ε3 , ε4 are the permittivity of the four substrates,
(33)
respectively. ζ(D,wk=1,2,...,8 ) are the geometry parameters that can
be determined by (21) and (23). C1 = Cpatch
n1
+ Csubp
n1
(34)
After obtaining the simplified equivalent circuits here, the C2 = n2
Cpatch + n1
Csubp + Cairp
n1
(35)
values of other elements can be synthesized using the classical C3 = n3
Cpatch + n2
Cairp + Csubp
n2
(36)
methods of filter design [30], [43], [44]. Note that once the
substrates are selected, the relevant value of the equivalent C4 = n4
Cpatch + n2
Csubp + Cairp
n2
. (37)
J-inverter is determined. Therefore the actual dimensions and And as for the even-mode resonance, an equivalent magnetic
the permittivity of the substrates should be taken into account wall is inserted at the symmetry plane TT and the one-port
in the first place. input admittance is derived as
The synthesized element values and the corresponding phys-
j
ical dimensions of the third-order spatial ASS are listed in Yine = j τ C1 + (38)
Tables I and II, respectively. The numerical validation of this n1
Csubs
1
τ
+ τ C21−Y B

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QIN et al.: EFFICIENT SYNTHESIS OF ASSs BASED ON ACCURATE EQUIVALENT CIRCUIT ANALYSIS 2633

by adjusting the air space lengths. The tunable 3-dB BW

of 0.3–0.5 in the angular domain is obtained when h 2 and
h 4 range from 2 to 6 mm and from 9 to 11 mm, respectively.
And in this design, the tunable 20-dB bandwidth achieved by
adjusting the lengths of the air spacers is near [0.08, 0.22] in
the angular domain.
Fig. 12(a) shows the general design guidelines for the pro-
posed ASSs. In this design, the genetic algorithm is applied.
Machine learning and inverse design methods [24] can also
work well since the equivalent circuits proposed are accurate.
To further demonstrate this design method, simulation results
of different responses are presented in Fig. 12(b). It can be
seen that the angular selections are achievable both in the
grating direction and the broadside direction. In this work,
since only basic patch units and four substrate layers are used,
the achievable 20-dB bandwidth is ranged from 0.06 to 0.63 in
the angular domain.

V. FABRICATION AND M EASUREMENT OF THE

S ECOND -O RDER ASS
As displayed in Fig. 13, the fabricated second-order ASS
consists of four identical TP−1/2 substrates (εr = 10.2,
tan δ = 0.0008). The design consists of 60 × 60 unit cells,
and the overall size is 180 × 180 mm. Several plastic screws
and cylinders are inserted between the substrates to form the
air spacers and to fix the position. Bandwidth tuning can
Fig. 11. Simulation results of the proposed second-order passband ASS. be realized simply by adjusting the length of these plastic
(a) Adjusting h 2 only. (b) Adjusting h 4 only. cylinders.
The prototype is measured with the setup displayed in
where Fig. 14. The transmitting and receiving antennas are placed
1 n2
Csubs + C4 on both sides of the absorbing material and are symmetrically
= L n1
airs τ −  n2 . (39)
YB Csubs τ C4 + τ C3 Csubs
n2
+ C4 tilted away from the normal direction. Crucially, there is a
square window of the same size as the fabricated spatial ASS
Then the angular response of this ASS can be given by
in the center of the absorbing material. And there are two
Y02 − Yine Yino tests required during the measurement: test 1 is to measure the
S11 = S22 = (40)
(Y0 + Yine )(Y0 + Yino ) transmission coefficient of the air-filled window S21_t1 ; test 2
(Yine − Yino )Y0 is to measure the transmission coefficient of the fabricated
S21 = S12 = (41) second-order spatial ASS fixed in the window S21_t2 . And with
(Y0 + Yine )(Y0 + Yino )
the decibel operations, the measured transmission coefficients
where Y0 = 1 −1 is the renormalized port admittance in the can be obtained: Strans = S21_t1 − S21_t2 (dB).
angular domain. The photograph of the measurement setup and the measured
Then, the numerical optimization can be adopted, and the results are shown in Figs. 15 and 16, respectively. Due to
optimized physical dimensions of the second-order ASS with the limitation of our setup, the measured incidence angle
tunable bandwidth are listed in Table III. For example, when can only vary from 0◦ to 85◦ , corresponding to the angular
h 2 = 4 mm and h 4 = 10 mm, the calculated spatial response function of [0.09, 1] in the angular domain. Compared with
is derived as the curves shown in Fig. 11, the measurement results, simu-
(−0.06 + F(t)) lation results, and calculation results are in good agreement.
S11 = (42)
(−0.06 + j E(τ ) + P(τ )) As shown in Fig. 17, the performance remains stable in the
where range from 9 to 11 GHz, and the bandwidth changes from
[0.33, 0.52] with the change of the center frequency from
F(τ ) = 1.2τ 2 + 0.5τ 4 − 53.3τ 6 − 100τ 8 (43) [0.21, 0.36] in the angular domain.
E(τ ) = 0.1τ − 4τ − 6τ + 16τ
3 5 7
(44)
P(τ ) = 1.56τ 2 + 1.2τ 4 + 52τ 6 + 100τ 8 . (45) VI. D ISCUSSION
Fig. 11 demonstrated the simulated validation of this In the angular domain analysis and equivalent cir-
design, and the bandwidth tuning of the passband is realized cuit mentioned above, the operating frequency is fixed

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2634 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Fig. 13. Photograph of the fabricated prototype.

Fig. 14. Setup of the measurement.

Fig. 12. Summary of the ASS design. (a) Flowchart of the design procedure.
(b) Simulation results of different responses, where two third-order ASS with
bandwidth close to the broadside direction and one second-order ASS with
tunable center angular function are presented.

Fig. 15. Photograph of test 2: measuring the transmission coefficient of the

fabricated second-order ASS, which is fixed at the air-filled window.
at one point, which emphasizes the response to differ-
ent incidence angles. In this section, the equivalent cir- reconstructed to analyze their characteristics in the frequency
cuits of these basic units discussed in Section III will be domain.

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QIN et al.: EFFICIENT SYNTHESIS OF ASSs BASED ON ACCURATE EQUIVALENT CIRCUIT ANALYSIS 2635

Fig. 16. Measured results of the implemented second-order ASS. The bandpass response versus different (a) h 4 at 9.5 GHz, (b) h 4 at 10 GHz, (c) h 4 at
10.5 GHz, (d) h 2 at 9.5 GHz, (e) h 2 at 10 GHz, and (f) h 2 at 10.5 GHz.

accidental but can be obtained by equivalent circuit modeling

and numerical analysis in the frequency domain.
As shown in (15), where the operating frequency is not fixed
at 10 GHz manually. Once the incidence angle θ , rather than
the operating frequency f , is fixed, the equivalent circuit in
the frequency domain can be obtained: for the TE incidence
wave, the equivalent circuit of the substrate has a series
inductor and two parallel capacitors. The same method also
applies to TM incidence wave and (16), (22), and (24). The
equivalent circuits of these basic ASS cells in the frequency
domain are summarized in Fig. 19. S-parameters of their
combinations can be determined based on circuit analyzes and
related calculations.
Fig. 17. Measured bandpass response of the implemented second-order ASS Actually, for a real FSS or ASS, all its response is
versus different operating frequencies. related to the incidence angle and the operating frequency.
To better understand this phenomenon, Fig. 20 shows the
transmission coefficient of the proposed second-order ASS
Fig. 18 shows the relationship between the S-parameters versus incidence angle and operating frequency. Specif-
of the two spatial ASSs proposed in Section V and different ically, the X-axis represents the incidence angle, the
operating frequencies. Bandwidths of the passband in the Y -axis represents the operating frequency, and the correspond-
frequency domain are wider when the incidence angle is ing color represents the transmission coefficient amplitude.
within the range of 70◦ –80◦ . However, these results are not This figure can also be expressed by an analytical formula that

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2636 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Fig. 20. Transmission coefficient of the proposed second-order ASS versus

incidence angle and frequency.

VII. C ONCLUSION
In summary, we have proposed a new efficient synthesis
method of FSSs in the angular domain based on the accurate
equivalent circuit model. The angular dispersion of different
components under oblique incidence is simulated by virtual
lumped elements in the angular domain. In the whole process
of analysis and design, the theoretical calculation is in good
agreement with the simulation results. A third-order FSS with
bandpass response and a second-order one with a tunable
Fig. 18. Response of the two spatial ASSs versus different operating bandwidth is given as design examples. The implemented
frequencies and different incidence angles. (a) Simulated results of the second-order ASS shows the [0.33, 0.52] tunable bandwidth
third-order spatial ASS in Table II. (b) Simulated results and the measured in the angular domain. The transmission loss is better than
results of the second-order ASS in Table III.
1.2 dB when the incidence angle is 65◦ to 77◦ . The simulated
results and calculated results are in good agreement with the
measured results. The proposed spatial ASS can serve as a
potential device in secure communications, radome design,
energy harvesting, spatial multiplexing and anti-interference
under a specific incidence angle.
Our work is the first step in the study of ASS equivalent
circuits. Future work will analyze more complex structures
to reduce the spatial ASS profile. Also, by synthesizing
the amplitude and phase shift for different incidence angles,
a spatial transmit array with high aperture efficiency and low
sidelobe level will be designed.

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Xian Qi Lin (Senior Member, IEEE) was born
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the B.S. degree in electronic engineering from the
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Antennas Propag., vol. 70, no. 3, pp. 2340–2345, Mar. 2022. the Ph.D. degree in electromagnetic and microwave
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May 2006, ch. 3, pp. 89–128. China, in 2008.
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circuit modeling techniques of frequency selective surfaces and metasur- From 2011 to 2012, he was a Post-Doctoral Researcher with the Department of
faces,” Appl. Comput. Electromagn. Soc. J., vol. 29, no. 12, pp. 960–976, Electromagnetic Engineering, KTH Royal Institute of Technology, Stockholm,
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pp. 217–220, Jan. 1985. circuits, metamaterials, and antennas.

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2638 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 71, NO. 6, JUNE 2023

Yao Yao was born in Ansun, Guizhou, China, Peng Hao (Member, IEEE) received the B.S. degree
in 1997. He received the B.S. degree in electro- in electronic information engineering and the Ph.D.
magnetic field and microwave technology from the degree in circuits and systems from the University
Chongqing University of Posts and Telecommunica- of Electronic Science and Technology of China
tions (CQUPT), Chongqing, China, in 2020. He is (UESTC), Chengdu, China, in 2013 and 2021,
currently pursuing the M.S. degree at the School respectively.
of Electronic Science and Engineering, University He is currently working as a Post-Doctoral
of Electronic Science and Technology of China Researcher with the Yangtze Delta Region Institute
(UESTC), Chengdu, China. (Huzhou), UESTC, Huzhou, China. His research
interests include hybrid analog/digital linearization
of power amplifiers, measurement, characterization,
and modeling of nonlinear devices.

Yong Liu (Member, IEEE) received the B.Eng. and Peng Mei (Member, IEEE) received the B.Eng.
Ph.D. (Hons.) degrees in electromagnetic fields and and M.Eng. (Hons.) degrees in electromagnetic
microwave technology from the University of Elec- fields and microwave technology from the Uni-
tronic Science and Technology of China (UESTC), versity of Electronic Science and Technology of
Chengdu, China, in 2007 and 2012, respectively. China (UESTC), Chengdu, China, in 2015 and
He is currently working as an Assistant Researcher 2018, respectively, and the Ph.D. degree in wireless
with UESTC. His current research interests include communications from Aalborg University, Aalborg,
millimeter wave circuits and systems, millimeter Denmark, in 2021.
wave communication, metasurfaces, beam-steerable He is currently working as a Post-Doctoral
and 3-D printing antennas, transmitarray/reflectarray Researcher with the Antennas, Propagation, and
antennas, and reconfigurable intelligent surfaces. Millimeter-Wave Systems (AMPS) Section, Depart-
ment of Electronic Systems, Aalborg University. His current research interests
include periodic structures, metasurfaces, beam-steerable and 3-D printing
antennas, transmitarray/reflectarray antennas, and reconfigurable intelligent
surfaces.
Hao Liu (Member, IEEE) was born in Hubei, China. Dr. Mei was a recipient of the Excellent Master Thesis from the Chinese
He received the M.S. degree in electronics and Institute of Electronics (CIE) in 2019. He was invited to serve as the Session
communication engineering and the Ph.D. degree in Chair for IEEE International Conference on Electromagnetics in Advanced
radio physics from the University of Electronic Sci- Applications (ICEAA) and IEEE-APS Topical Conference on Antennas and
ence and Technology of China (UESTC), Chengdu, Propagation in Wireless Communications (APWC) in 2019, Progress In
China, in 2014 and 2021, respectively. Electromagnetic Research Symposium (PIERS) in 2022, and International
He is currently working as a Post-Doctoral Symposium on Antennas and Propagation (ISAP) in 2022. He is also serves
Researcher with UESTC, and also with the Yangtze as the Chief Guest Editor for the Special Issue on Advanced Massive MIMO
Delta Region Institute (Huzhou), UESTC, Huzhou, Antenna Arrays, Metasurfaces, and Reconfigurable Intelligent Surfaces for
China. His current research interests include wide- Sensing, Localization, and Wireless Communications launched by Sensors and
band antennas, phased arrays, metamaterial designs, the Organization Committee of the 2023 International Workshop on Antenna
and their applications. Technology (iWAT), will be held in Aalborg, May 2023.

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