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ONS Micro Project

The document is an examination paper consisting of multiple-choice questions and descriptive problems related to electronic components and circuits, such as transistors, diodes, and power supplies. It includes instructions for answering questions, various topics to cover, and specific tasks like drawing circuit diagrams and explaining concepts. The questions require knowledge of electronic principles, calculations related to circuits, and comparisons between different types of electronic devices.

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0% found this document useful (0 votes)
10 views23 pages

ONS Micro Project

The document is an examination paper consisting of multiple-choice questions and descriptive problems related to electronic components and circuits, such as transistors, diodes, and power supplies. It includes instructions for answering questions, various topics to cover, and specific tasks like drawing circuit diagrams and explaining concepts. The questions require knowledge of electronic principles, calculations related to circuits, and comparisons between different types of electronic devices.

Uploaded by

kavalesiddhi96
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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11819 3 Hours / 70 Marks Seat No. [TTT Instructions: (1) All Questions are compulsory. (2) Answer cach next main Question on a new page. (3) Mlustrate your answers with neat sketches wherever necessary. (4) Figures to the right indicate full marks. Marks 1. Attempt any FIVE of the following : 10 f@ (b) © @ © @ 3) ‘Draw the symbol of photodiode. Define Transistor. State its type. Define load and line regulation. State application of FET. ‘Sketch energy band diagram of semiconductor. State the need of DC regulated power supply. ‘Name the components of following symbol 5 Ie ) 22216 [of 4] 2 Attempt any THREE of the following : R (@) Compare PN junction diode & zener diode (four points). (b) Explain with a neat circuit diagram of voltage divider bias method for biasing a transistor. (©) Draw the block diagram of DC power supply. Explain the function of each block. (@) Explain the concept of DC load line and operating point. Attempt any THREE of the following : n (0) An AC supply of 230 V is applied to HWR through a transformer with turns ratio 10: 1, Find Average DC output, Voltage current and P/V of diode, RMS value of voltage and current. (b) State the values of following parameters with reference to full wave rectifier : (i) Ripple factor (ii) Efficiency 32/82 ii) TUF (iv) PV (©) Compare EMOSFET & DMOSFET. (@) Determine output voltage V,, load current 1,, zener current I, & power dissipation in zener diode for the circuit shown below. Rg = 1009 R,=10KQ 22216 Attempt any THREE of the following : 2 2 @) (b) © @) [of 4] Compare PN junetion diode & zener diode (four points). Explain with a ncat circuit diagram of voltage divider bias method for biasing a transistor. Draw the block diagram of DC power supply. Explain the function of each block. Explain the concept of DC load line and operating point. 32/82 Attempt any THREE of the following : n @ (b) () @ An AC supply of 230 V is applied to HWR through a transformer with turns ratio 10; 1, Find Average DC output, Voltage current and P/V of diode, RMS value of voltage and current. State the valucs of following parameters with reference to full wave rectifier : (Ripple factor (ii) Efficiency Gii) TUF (iv) PV Compare EMOSFET & DMOSFET. Determine output voltage V,, load current |, zener current 1, & power dissipation in zener diode for the circuit shown below. Rg = 1009 22216 4, B of 4] Attempt any THREE of the following : R (a) (by (©) () Compare L, C, LC and 2 filter on the basis of usefulness in reducing ripple or suitability for heavy / light load. Explain the operating principle of PNP transistor. Find the Q point values for the following cireuit. Assume Vgg = 0.7 V & B= 60 +V ce" 10V Ry=290kQ Ro = 2kO B60 ‘Compare BIT & JFET with reference to following point: @ Symbol (i) Transfer characteristics Gi) VP impedance iv) Application Describe the working of zener diode as a voltage regulator with characteristics of zener diode. 34/82 22216 [40f4] 5. Attempt any TWO of the following : n (@) With neat circuit diagram and mathematical expressions, explain the self biasing used in FET. (b) Identify the following circuit shown in Fig. No, 1 and draw input and output waveforms _ 34/82 3 * (©) Explain Vel characteristics of zener diode. 6. Attempt any TWO of the following : n () Draw the characteristics of LED and write advantages, disadvantages and application of it. (each two points) (b) Drow circuit and describe working of full wave rectifier using center tapped transformer with waveforms. (©) (In CE configuration if B = 99 leakage current [ogg = $0 pA. If base current is 0.5 mA. Determine Ir and Ip. (ii) Derive relation between o & B. 35/82 33 Qi Attempt any FIVE : 10-Tota— Marks a) Draw the symbol of photodiode. 2M. Ans: Z Correct node ms Cathod symbol 32M b) Define Transistor. State its type. 2M Ans: | Transistors are active electronic components made of semiconducting materials, which Definition - can amplify the electric signals by the application of a small input signal. IM; Types of transistors: 1. Unipolar Junction Transistors Types - IM 2. Bipolar Junction Transistors ) Define load and line regulation. 2M Ans: | Load regulation is the ability of the power supply to maintain its specified output | Each voltage given changes in the load. definition - Line regulation is the ability of the power supply to maintain its specified output | 1M voltage over changes in the input line voltage. Page d) ‘Ans: e) ‘Ans: ANONEC -27001 - 2013 Certined) State application of FET, ‘NOTE : Any other relevant Applic Applications of FET i. As input amplifiers in oscilloscopes, electronic voltmeters and other measuring and testing equipment because high input impedance reduces loading effect to the minimum. ‘Constant current source, ‘They are used to build RF amplifiers in FM tuners and other communication circuits. ‘Because of low noise. iv. FETs are used in mixer circuits of FM and TV receivers as it reduces inter modulation distortion. vv. Used as Analogue switch. vi As a Voltage Variable Resistor (VVR) in operational amplifiers. ‘Sketch energy band diagram of semiconductor. m mark shall be given, Any two application: (IM each) Energy band diagram for N type semiconductor: Any one correct Canduckon energy bord diagram - Z, ~ gacraased 2M dlecbvot ides, dower a Valence Energy Band Energy band diagram for P type semiconductor: conduckiy Baud 36/82 os Fe CAIDA a go State the need of DC regulated power supply. Need of DC regulated power supply = 1. To convert unregulated AC into constant DC 2. To convert fluctuating main supply into regulated constant DC. ‘Name the companents of follawing symbol: (@ N-channel Enhancement type MOSFET (ii) N-channel Depletion type MOSFET ‘Compare PN junction diode & Zener diode. (four points). [Parameter | PN junction diode: Symbol > Se Direction of Conduction _[ Conducts only in one ‘Conducts in bor direction Reverse breakdown Tthas no sharp reverse breakdown ‘Application ‘Used in rectification Used in regulation Resistance in reverse Very high Very small biased condition ‘Characteristics Tae ‘Any one relevant nee -2M b) | Explain with a neat circuit diagram of voltage divider bias method for biasinga___| 4M transistor. ‘Ans: The voltage divider is formed using extemal Explanation resistors Ri and R:, The voltage across R2 forward Vee -2M biases the emitter junction. By proper selection of 9 Diagram - resistors Ri and Ro, the operating point of the transistor 2M can be made independent of . In this circuit, the | |x Je voltage divider holds the base voltage fixed independent of base current provided the divider current is large compared to the base current a rs ‘The voltage at transistor base, Va=Vec X - ey Neglecting Ve, The emitter current = Ie= z= ie We Ver = Vee = Ie. Ro~Ie. Re eno ©) | Draw the block diagram of DC power supply. Explain the function of each block. _| 4M ‘Ans: AC Mains ; Diagram - * 2M vs Finer bc Output ne MI Transformer 38/82 ‘Transformer ; It reduces the amplitude of ac voltage to the desired level ana Fum a rectifier circuit aM Rectifier : This circuit converts the voltage at the secondary of the transformer into | ~ pulsating de voltage. Filter: This circuit reduces the ripple content in the pulsating de, producing unregulated de voltage. Regulator: This circuit converts the unregulated de voltage into regulated constant de volta Explain the concept of DC load line and oprating point. DC Toad Hine: The straight line drawn on the characteristics of a BJT amplifier which ive the DC values of collector current Ic and collector to emitter voltage Veg Corresponding to zero signal i.e. DC conditions is called DC load line. To plot leawax), Vor atax) 0n output characteristics: Get Veroaax) by putting le=0 Vor =Nac~le Re Ver auxs- Voc since k = 0 Get Icomax by putting Vee <0 Jeon = SEE a ‘Saturation IM 5 point or Q- point: The fixed levels of certain currents and voltages in a transistor in active region defines the operating point on the DC load line. For normal operation of the transistor, the Q- point is to be selected at the center of the load line. Q3 ‘Attempt any THREE of the following: 12-Total Marks a) | An AC supply of 230 Vis applied to HWR through a transformer with turns ratio _| 4M 10:1. Find Average DC output, Voltage current and PIV of diode, RMS value of voltage and current. ‘Ans: | Vemns=230V, np/ns=10/1 Max primary voltage is Vp=v2* Vrms =V2* 230 =325.22Volt ‘The max secondary voltage is Vm=ns/np*Vp= 1/10*325.22 =32.82V V average=Vde=Vanin ‘Vde = 32.5/ 3.14 1 Mark =10.35V PIV=Vmz= 32.52V PIV = 1 Mark Ide=Im/n Irms= Im/2 40/82 Assume Ri-10KQ - (Note - Students may assume any value and attempt to solve, can be considered) Im=Va/R, =32.52/10°1000 =3.25mA Ide=Im/x 3.25*10/n Ripple factor 48% Efficiency - 81.2% TUF -693 or 81.2 (iv) PIV- Vm ‘Compare EMOSFET & DMOSFET. Sr.No. E MOSFET DMOSFET 1 Insulating oxide layeris | Aminsulating oxide layer is present present between gate and | between G & channel n or p-type substrate channel is absent. | channel is present, At the operation induced channel get created. 2. For n- channel EMOSFET | For an n-channel DMOSFET, the Vex Vos will be only positive. | can be negative for depletion mode & positive for Enhancement mode 3 For an n-channel For an n-channel DMOSFET Ip EMOSFET Ip increases as _| decreased as Vas becomes more and Ves becomes more and —_| more negative. more positive 4 For an n-channel For an n-channel DMOSFET Ip = 0 for EMOSFET Ip = 0 for Vas SVr(Vasn) (Vas 2 Ver Any 4 points — Imari 40/82 wf ni ‘© ~@ canna OEY Chanel MONET 4) | Determine output voltage Vo,load current Ii, zener current I, & power dissipation in | 4M zener diode for the circuit shown below. 41/82 ‘Ans: [DVO=Va Vo = Tima =8V ii) load current h. BWR, = 8/(10*1000) Ie = mark 00,0008 208mA iii)zener current lz Le = Imark Vo=Vin-Is.Rs Is=(Vin- Voy/Rs MAHARASHTRASTATE BOARD OF TECHNIC. ve. m : ‘AL EDUCATION (ISOMTEC « 27001 - 2013 Certified Isles, eels. I 0.0008 0.01928 iv)Power dissipation Vit h dissipation = mark Compare L, C and 7 filter on the basis of usefulness suitability for hea Tipple o Parameters | L filter Cfilier LC flier u filter weeny Ri MORE, LESS LOW LOWEST for heavy / Suitability for [HEAVY LIGHT LOAD [HEAVY LOW LOAD " 1} | light load heavy /light | LOAD LOAD CURRENT mark cach load. CURRENT. point b) | Explain the operating principle of PNP transistor. aM ‘Ans: Diagram ~ 1 mark Explanation = marks APNP transistor biased in active mode, i.¢. the emitter ~base (E-B) junction as forward biased battery Vee and the collector ~ base (C-B) junction as reverse biased, the emitter — base (E-B), junction is forward biased only if the emitter to base (E-B) voltage (VEB) exceed the barrier potential which is 0.7 volts for silicon and 0.3 volts for germanium transistors, “The forward biased on the emitter base (E-B) junction causes majority carriers Le. holes the P type emitter region to flow towards the N type base region. This E-B junction, they tend to combine with the maj holes in the base res Pavel 5) and collector current i.e. Ie = Is + le Find the Q point values for the following circuit, Assume Ver WV“ WV Re =210 Ry-29040 Most collector current is also injected current because this current is produced due to the holes injected from the emitter region, There is another small component of collector current due to thermally generated carriers, This current component is called reverse saturation current (Ico) and is quite small. In this way, almost entire emitter current flows in the collector circuit, itis clear that the emitter current is the sum of the base current TVEP=0. ay ‘Saturation point (0r upper end) Cut-off point (ot lower end) Collector-o-emitter VO —— voltage (Voc) —® For point on X axis—le=0 Vou= Vee=10V For pointon Y AXIS ~ VCE=0 Ic=VeoRe = 10/2000 = 0.005 =5mA Compare BIT & JFET with reference to following point: D Symbol ii) Transfer characteristics il) VP impendence iy) Application 43/8: Ic = 2marks Vee ‘Ans: T mark each Parameters BIT FET Symbol put ‘oxtpat —= = mm he toy he a ep ae ae a — pm wars pp anior ‘Transfer characteristics | oy OR OR Linear in BJT Non-linear in FET UP impedance Low High ‘Application ‘Amplifier and Switch ‘Amplifier and Switch 44/82 — @) | Describe the working of Zener diode as a voltage regulator with reverse iM characteristics of zener diode ‘Ans: 2 marks R diagram 2 oe + marks . ie . explanation SEVg + Vz RDN; Unregulated | Regulated voltage voltage Circuit Deseription As the zener diode is connected in parallel or shunt with the load hence it is also known as SHUNT REGULATOR. ‘A resistance (Rs) is connected in series with the zener diode to limit current in the circuit. For proper operation, the input voltage(Vs) must be greater than the zener voltage( V7). vz MS as Vi=Ve + lz-Rz Where, Razz zener resistance WORKING OF ZENER DIODE SHUNT REGULATOR A] REGULATION BY VARYING INPUT VOLTAGE Vs Variable Here the load Resistance is kept fixed and input voltage is varied within the limits CONDITION 1. WHEN INPUT VOLTAGE IS INCREASED When input voltage is increased the input current (Is) also increases. Thus current through zener diode gets increased without affecting the load current(IL).The increase in input voltage also increases the voltage drop across the resistance Rs thereby keeping the VL constant. CONDITION 2. WHEN INPUT VOLTAGE IS DECREASED When input voltage is decreased, the input current gets reduced, as a result of this Iz also decreases. The voltage drop across Rs will be reduced and thus the load voltage (Vi) and oad current(Iz) remains constant. B] REGULATION BY VARYING LOAD RESISTANCE In this method the input voltage is kept constant whereas load resistance Rt is varied. CONDITION 1. WHEN LOAD RESISTANCE IS INCREASED When load resistance is increased, the load current reduces, due to which the zener current Iaincreases. Thus the value of input current and voltage drop across series resistance is kept constant. Hence the load voltage remains constant, CONDITION 2, WHEN LOAD RESISTANCE IS REDUCED When load re tance is decreased, the load current increases. This leads to decrease in Iz Because of this the input current and the voltage drop across series resistance remains constant. Hence the load voltage is also kept constant. Qs ‘Attempt any TWO of the following : 12-Total Marks a) | With neat circuit diagram and mathematical expressions, explain the self-biasing | 6M used in FET. ‘Ans: Circuit 1, SELF BIASING Digram:3M + In this circuit there is only one drain supply and no gate supply. Explanation © The gate terminal is connected through resistor Ra to the ground, IM . © The source terminal is connected through resistor Rs to the ground. Mathematic (NOTE: In JFET input PN junction between gate & source is always reverse a ‘ bias, due to this input resistance of JFET is very high, Due to this input gate re current Iq = zero. Hence if resistor Ro is connected in series with gate terminal, ic Ra= 0) voltage drop across Ro is zero as Vc 46/82 © VasloRa=0 © Vos = Va- Vs Vs APPLY KVL TO INPUT LOOP Vas + InRs =0 Vos =-InRs * Ip = Toss {1- P * APPLY KVL TO OUTPUT LOOP Vpn - [Ro Vaso InRs = 0 Voso = Vow = IoRp - Ins 5}? Shockley’s equation Ckt is Positive Diode Clamper Ww Vn +10 i t 5 Uy “Ym 47/8: Input Waveform dew Waveform Explain V-I characteristics of zener diode. ‘This characteristic is similar to that of an ordinary silicon P-N junction diode. ‘This indicates forward current is very smail for voltages below knee voltage (VK = MAHARASHTRASTATE BOARD OF TECHNICAL EDUCATION (Autooo mous) (ISOMEC - 27001 -2013 Certified) 0:7) and large Tor voltages above Knee voltage Reverse characteristics of Zener diode: * Fig above shows the reverse portion of V-I characteristics of the zener diode. © As the reverse voltage (Vx) is increased the reverse current (Iz) remains negligibly small up to the ‘Knee’ of the curve. © Atthis point the effect of breakdown process begins, * From the bottom of the knee, the breakdown voltage or Zener voltage (Vz) remains essentially constant. * This ability of a diode is called regulating ability and is an important feature of Zener diode, + Following two points are important from the characteristics of a Zener diode. * There is a minimum value of Zener current called “break over current” designated as Izx or Ia(min) which much be maintained in order to keep the diode in regulation region. ‘There is a maximum value of Zener current designated as Iza or Iz(max) above which the diode may be damaged. ‘Attempt any TWO: T2-Total Marks a) | Draw the characteristics of LED and write advantages, disadvantages and oM application of it. (each two points) VI characteristics of LED: Va characteristi csof LED:3M Forward voltage and current characteristics of it D ; Voting ee | MAHARASHTTRASTATE BOARD OF TECHNICAL EDUCATION ‘Aetaoemes) {QSOTEC - 27001 - 2013 Certified) ADVANTAGES: (Any Two Points) Efficiency: LEDs emit more hh ceelon: LEDs can emit light of an intended color. This is more efficient ‘andcan | Advantages: ower initial costs. IM fer than 2 mn?) and are easily attached to. | (2Points) «Size: LEDs can be very small (small printed circuit boards. « OnOff time: LEDs light up very quicl ‘can have even faster response times. «Dimming: LEDs can very easily be dimmed either by pulse-wiclh modulation or Iowering the forward current. «Cool light: In contrast to most Light sources, * Slow failure: LEDs mostly fail by dimming over time, failure of incandescent bulbs. |. Lifetime: LEDs can have a relatively long useful life. product. + Shock resistance: LEDs, being solid-state components, are difficult 10 damage, Sock ternal ahock, unlike fluorescent and incandescent bulbs, which are fragile. “sFocuss The solid package of the LED can be designed to focus its light Aly. LEDs used in communications devices LEDs radiate very little heat. rather than the abrupt Disadvantages (Any Two Points): © High initial price: LEDs are currently more expensive (price per lumen} on an initia capital cost basis, than most conventional lighting technologies. . ‘Temperature dependence: LED performance largely depends on the ambicnt temperature of the operating environment — or “thermal management” propenict Disadvantag 4 Voltage sensitivity: LEDs must be supplied with the voltage above the threshold | IM ‘and a current below the rating. (2Points) change in applied voltage. «Light quality: Most cool-white LEDs have spectra that differ significantly from ‘a black body radiator like the sun or an incandescent light «Area light source: Single LEDs do not approximate a point source of light giving a spherical light distribution. + Efficiency droop: ‘The efficiency of LEDs decreases as the electric current increases, Heating also increases with higher currents which compromise the lifetime of the LED. + Impact om insects: LEDs are much more attractive to insects. {Use in winter conditions: Since they do not give off much heat in comparison to traditional electrical lights, LED lights used for traffic control cam have snow ‘obscuring them, leading to accidents. Applications of LED (Any Two Points @ Asa power indicator. © Inseven segment display. © Inthe opto-couplers, Application: Inthe infrared remote controls. ro (2Point 49/82 MANA RASHTRASTATE BOARD OF TECHNICAL EDUCATION ‘Conseaoas) (ISOMEC - 27001 - 2013 Certified) ie Db) _| Draw circuit and describe working of full wave rectifier using center tapped oo transformer with waveforms. ‘Ans: | Full wave Rectifier with Center tapped transformer(FWR) © In full wave rectification, the rectifier conducts in both the cycles as two diodes | Circuit are connected. oe 2 Circuit diagram: ny Operation: ‘The circuit employs two diodes D1 and D2 as shown. A center tapped secondary | Description: winding AB is used with two diodes connected. So that each uses one half — 2M eycles of input AC voltage. Diode D1 utilized the AC voltage appearing across the upper half (OA), while fiode D2 uses the lower half winding (OB), The voltage V, between the center-tap and either ends of secondary winding is. half of the secondary voltage VjieV, = 4 If the output voltage should be equal to the input voltage, a step up transformer with tums ratio “= 2 must be used. Thus the total secondary voltage V2 is twice the primary voltage. Ye Va = 2 In positive half cycle (0-I1). ‘The end A of the secondary winding becomes positive and end B negative. ‘This makes diode D1 forward biased and diode D2 reverse biased. Therefore D1 conducts while D2 does not. ‘The conventional current flow direction in the upper half winding ax shown in the fig above. A-DI-RL-O In negative half eyele ({1-211 End A of secondary winding becomes negative and end B positive. Therefore diode D2 conducts while diode DI does not ‘The conventional current flow is from as shown by the arrows in the above fig. B-D2-RL-O From fig. current in the load RL is in the same direction for both half-cycles of input AC voltage. Therefore DC is obtained across the load RL. 50/82 Pay, ‘(Anon (ISOMEC - 27001 - 2013 Certified) a MAHARASHTRASTATE BOARD OF TECHNICAL EDUCATION Waveforms: 2M © 1) In CE configuration if p= 99 leakage current Icro = 50 WA. If base current is | 6M 0.5 mA. Determine Ic and Iz, li) Derive relation between a & B. Ans: [7 Given: To find and In= fe99 VSmarks Teno = 50 pA, each Jy = 05 mA, = 500 pA Derive a relation Ie & Ie between a &B= Solution: marks Io=P* ln + lexo ‘Therefore, Te = 99 x 500 WA + 50 WA lo= 495S0NA ‘Therefore, IC = 49.55 mA. fe = Ie + Ip Ie = 49.55 mA +0.5 mA Ie = 50.05mA Ie = 50.05 mA 51/82 ii) Relation between a & fi: ‘We know that; Therefore Va=UB+1 (Since a= le/ Ie, B=lo/ls Pagel? MAHARASHTRASTATE BOARD OF TECHNICAL EDUCATION (Autonoma) 2701 - 2013 Certified) (ISOTEC Therefore = 148 B Therefore a = __B 1+8 a(14+B)=B atap=f Therefore a = B — af Therefore a= B( 1-a) Therefore B= _q@_ lea

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