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LECTURE

This lecture covers the fundamentals of doped semiconductors, distinguishing between intrinsic and extrinsic types. It explains the processes of doping, the effects of temperature on conductivity, and the characteristics of n-type and p-type semiconductors. Key elements used for doping, such as Boron and Phosphorous, are highlighted for their roles in enhancing electrical properties.

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11 views23 pages

LECTURE

This lecture covers the fundamentals of doped semiconductors, distinguishing between intrinsic and extrinsic types. It explains the processes of doping, the effects of temperature on conductivity, and the characteristics of n-type and p-type semiconductors. Key elements used for doping, such as Boron and Phosphorous, are highlighted for their roles in enhancing electrical properties.

Uploaded by

sandyhoranx
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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“Electronic Engineering Fundamentals”

Lecture 4

Doped Semiconductor
Instructor:
Dr. Aya Hossam
TODAY’S MENU

Intrinsic & Extrinsic


1 Semiconductor

2 Doping in Semiconductors

PN- Junction
3
Intrinsic & Extrinsic
Semiconductor
1- INTRINSIC SEMICONDUCTOR
➢ A perfect semiconductor crystal with no impurities or lattice defects is called an
intrinsic semiconductor.

• At T=0K – No charge carriers Valence


band is filled with electrons Conduction
band is empty.

• At T>0
• Electron-hole pairs are generated
• EHPs are the only charge carriers in intrinsic
material Electron-hole pairs in the covalent
bonding model in the Si crystal.
Electron-Hole Pair in a Semiconductor

Creation of an Electron-Hole Pair in a Semiconductor

External energy
source
INCREASING CONDUCTIVITY

➢How temperature affects the carrier concentration?


Answer:
1) When the temperature increases, the conductivity of the semiconductor material
increases because some electrons in the valence band move to the conduction
band.

• When more heat is applied the higher the number of electrons that can gain the required
energy to make the conduction band transition and become available as charge carriers.
INCREASING CONDUCTIVITY
2) Another way to increase the number of charge carriers is to add them in from
an external source.

3) Doping is the process of adding impurity atom to semiconductor in order to


change its properties.

Semiconductors (Si or Ge) are typically doped with elements such as Boron,
Arsenic and Phosphorous to change and enhance their electrical properties.
2- EXTRINSIC MATERIAL
• Thus there are two types of doped semiconductors, n-type
(mostly electrons) and p-type (mostly holes).

• When a crystal is doped such that the equilibrium carrier


concentrations n0 and po are different from the intrinsic carrier
concentration ni, the material is said to be extrinsic.
Doping in
Semiconductor
SEMICONDUCTOR DOPING
• The interesting properties of semiconductors emerges when impurities are
introduced.

• Doping is the process of adding very small well controlled amounts of


impurities into a semiconductor.

• Doping enables the conductivity and other properties over a wide range of
values.

• For silicon, impurities are from columns III and V of the periodic table.
DONOR IMPURITIES IN SILICON

−q

+q e
• Phosphorous (or other column V element) atom
replaces silicon atom in crystal lattice.
• Since phosphorous has five outer shell electrons, there
is now an ‘extra’ electron in the structure.
• Material is still charge neutral, but very little energy is
required to free the electron for conduction since it is
not participating in a bond.
N-TYPE SEMICONDUCTOR
• A silicon crystal doped by a pentavalent element (eg. phosphorus). Each dopant atom
donates a free electron and is thus called a donor. The doped semiconductor becomes
n type.
• Any impurity from column V (penta-valent impurity atoms, as arsenic (As), phosphorus
(P)) introduces an energy level very near the conduction band in Ge or Si.
• This level is filled with electrons at 0 K, and very little thermal energy is required to
excite these electrons to the conduction band.

Figure shows the Donation


of electrons from a donor
level to the conduction band
N-TYPE SEMICONDUCTOR
• Thus, at about 50-100 K nearly all of the electrons in the impurity
level are "donated" to the conduction band.

• Such as impurities in Ge or Si are called donor impurities.

• Thussemiconductors doped with a significant number of donor


atoms will have n0>>(ni,p0) at room temperature. This is n-type
material.
ACCEPTOR IMPURITIES IN SILICON

• Boron (column III element) has been added to


silicon.
• There is now an incomplete bond pair, creating a
−q
vacancy for an electron. e
• Little energy is required to move a nearby
electron into the vacancy.
Vacancy
• As the ‘hole’ propagates, charge is moved across
the silicon. +q
ACCEPTOR IMPURITIES – HOLE
PROPAGATION

Hole is propagating through the silicon.


ACCEPTOR IMPURITIES – HOLE
PROPAGATION

e
Hole

Hole is propagating through the silicon.


ACCEPTOR IMPURITIES – HOLE
PROPAGATION

Hole

Hole is propagating through the silicon.


Acceptor Impurities – Hole propagation

Hole is propagating through the silicon.


P-TYPE SEMICONDUCTOR
• Atoms from column III (B, Ga) introduce impurity levels in Ge or Si near the valence
band.
• These levels are empty of electrons at 0 K. At low temperatures, enough thermal energy
is available to excite electrons from the valence band into the impurity level, leaving
behind holes in the valence band.

Acceptance of valence band electrons by an acceptor


level, and the resulting creation of holes.
P-TYPE SEMICONDUCTOR

• Such as impurities in Ge or Si are called acceptor impurities.

• Doping with acceptor impurities can create a semiconductor with a


hole concentration p0 much greater than the conduction band
electron concentration n0 (p0 >> n0 ).

• This is (p-type material).


Doping and Dopants

Covalent bond Free Hole Free Electron


Covalent bond

Boron Atom Phosphorous Atom

p-type-doping n-type-doping

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