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CE Characteristics

The document discusses the characteristics and configurations of NPN transistors, focusing on the common-emitter configuration, which is the most widely used due to its high voltage and power gain. It explains input and output characteristics, detailing how variations in base current lead to significant changes in collector current, thus enabling current amplification. Additionally, it covers the operation of transistors as switches, describing their behavior in both 'on' and 'off' states.

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6 views13 pages

CE Characteristics

The document discusses the characteristics and configurations of NPN transistors, focusing on the common-emitter configuration, which is the most widely used due to its high voltage and power gain. It explains input and output characteristics, detailing how variations in base current lead to significant changes in collector current, thus enabling current amplification. Additionally, it covers the operation of transistors as switches, describing their behavior in both 'on' and 'off' states.

Uploaded by

atharva.whatsappbackup
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CE Transistor

Characteristics
By : Dr. Atul R. Phadke
Associate Professor in Electrical Engineering
COEP Technological University Pune (Maharashtra)
CONFIGURATIONS OF TRANSISTORS:

Common-emitter, common-collector, and common-base configurations of NPN transistors

For the connection of input and output, one of the transistor terminals is made
common.
There are three types of configurations, namely (i) common-emitter configuration; (ii)
common-collector configuration; (iii) common-base configuration.
The common emitter configuration is the most widely used because of its very high
voltage and power gain.
Therefore, we will discuss the common emitter configuration only.
COMMON EMITTER TRANSISTOR CHARACTERISTICS:

Circuit diagram for determining the common-emitter characteristics of PNP type transistor

The input voltage is applied between the base and the emitter terminals.
The output is taken from the collector and the emitter terminals.
The emitter terminal is common to both input and output.
Thus, this connection is called the common-emitter configuration.
COMMON EMITTER TRANSISTOR CHARACTERISTICS:

Circuit diagram
Input Characteristics
The input characteristic is drawn between 𝑉𝐵𝐸 and 𝐼𝐵 .
To draw the input characteristic, the voltage between the collector and the emitter, i.e., 𝑉𝐶𝐸
is kept constant.
By changing 𝑉𝐵𝐸 , current 𝐼𝐵 is recorded and the characteristics can be plotted.
The input characteristics is similar to the characteristic of a forward-biased p–n junction.
The value of 𝐼𝐵 is very small, is of the order of several microamperes only.
COMMON EMITTER TRANSISTOR CHARACTERISTICS:

Circuit diagram

Output Characteristics

The output characteristics are drawn between 𝐼𝐶 and 𝑉𝐶𝐸 keeping 𝐼𝐵 constant.
For each value of 𝐼𝐵 , 𝑉𝐶𝐸 is adjusted in steps and the values of 𝐼𝐶 are recorded.
The values of 𝐼𝐶 are plotted against 𝑉𝐶𝐸 for each value of 𝐼𝐵 to obtain the output
characteristics.
COMMON EMITTER TRANSISTOR CHARACTERISTICS:

From the output characteristics, it can be


seen that for a small change in base current
(in A) there is a large change in collector
current and emitter current (in mA).
The current gain from the base to the
collector can be stated as:
∆𝐼𝐶
𝛽𝑑𝑐 =
∆𝐼𝐵
Thus, the transistor can be used as a current
amplification device.
The voltage gain, 𝐴𝑉 of the transistor is
defined as the ratio of output voltage to input
Output Characteristics
voltage.
TRANSISTOR AS AN AMPLIFIER:

Simple transistor amplifier circuit using NPN transistor connected in the common emitter configuration

The ac signal which is to be amplified is connected to the base circuit.


The output is taken across a resistance, RL in the collector circuit.
The voltage, VBE is the summation of dc voltage VBB and the ac input signal, Vi .
The dc voltage, VBB is the bias voltage.
TRANSISTOR AS AN AMPLIFIER:

Simple transistor amplifier circuit using NPN transistor connected in the common emitter configuration
The magnitude of VBB is such that the base will always remain positively biased in both
half cycles of the input voltage.
The base current IB is the sum of the dc base current IBQ and the ac current.
Because of the variation in the base current there will be a large variation in the collector
current, which will flow through the load resistance RL.
TRANSISTOR AS AN AMPLIFIER:

Simple transistor amplifier circuit using NPN transistor connected in the common emitter configuration

The amplified collector ac current is superimposed on the dc current, ICQ.


ICQ is the collector current which will flow if the ac input signal is not applied.
Due to the large collector current, an amplified output voltage will be available
across the load.
TRANSISTOR AS A SWITCH:

Off state of a BJT ON state of a BJT

A BJT can be also used as a switch.


There are two states for a switch.
The switch is closed, i.e., it offers minimum resistance and current flows through it.
Or the switch is open, i.e., there is no current flow (cut off).
TRANSISTOR AS A SWITCH:

Off state of a BJT ON state of a BJT

The base voltage level is either at zero level or at an appropriate positive level.
When the input voltage, Vi is at zero level, the base current is zero and there is no
collector current, i.e., IC = 0.
The transistor is cut off and works like an open switch.
TRANSISTOR AS A SWITCH:

Off state of a BJT ON state of a BJT

If Vi is at positive level, and the base current IB is made high enough, the transistor
operates in the saturation region.
Under saturated condition, large collector current IC flows and the transistor
operates as a closed switch.
Thank You

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