<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

Terminal arrangement
DESCRIPTION
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for
12.5-volt portable radios that operate in the 400- to 470MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage ⑤
① ② ③ ④
(VGG=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain
current increase as the gate voltage increases. With a gate
voltage around 2.5V (minimum), output power and drain current
increases substantially. The nominal output power becomes ① INPUT TERMINAL (Pin)
available at 3V (typical) and 3.5V (maximum). ② GATE BIAS DC SUPPLY TERMINAL (VGG)
This module is designed for non-linear FM modulation, but may ③ DRAIN BIAS DC SUPPLY TERMINAL (VDD)
④ OUTPUT TERMINAL (Pout)
also be used for linear modulation by setting the drain quiescent ⑤ GND (FIN)
current with the gate voltage and controlling the output power with
the input power. PACKAGE CODE : H46S

FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• T>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 400-470MHz
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power

RoHS COMPLIANCE
• RA07H4047M is a RoHS compliant products.
• This product include the lead in the Glass of electronic parts and
the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

Antistatic tray,
RA07H4047M-501
50 modules/tray

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG=0V, Pin=0W 16 V

VGG Gate Voltage VDD≦12.5V, Pin=20mW 4 V

IDD Total Current - 4 A

Pin Input Power 30 mW

f=400-470MHz,
Pout Output Power 10 W
VGG≦3.5V
Tcase(OP) Operation Case Temperature Range -30 to +90 °C

Tstg Storage Temperature Range - -40 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range - 400 - 470 MHz

Pout Output Power VDD=12.5V, VGG=3.5V, Pin=20mW 7 - - W

T Total Efficiency 40 - - %

2f0 2nd Harmonic Pout=7W (VGG adj.), - - -25 dBc

3f0 3rd Harmonic VDD=12.5V,Pin=20mW - - -30 dBc

in Input VSWR - - 4:1 -

IDD Drain Current VDD=16V,Vgg=0V,Pin=0W - 300 - uA

Load VSWR VDD=13.2V, Pin=20mW, Pout=7W (VGG adj.), No degradation or

- -
Tolerance Load VSWR=20:1 (All Phase) destroy

VDD=7.2/12.5/15.0V, Pin=10/20/30mW, No parasitic

- Stability Pout≦8W (VGG control), oscillation -
Load VSWR=4:1(All Phase) more than -60dBc

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

rd
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3 HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
16 90 -30
Pout@V GG=3.5V V DD=12.5V
14 80 Pout@7W(VGG adj.)

TOTAL EFFICIENCY hT (%)

V DD=12.5V
OUTPUT POWER Pout (W)

Pin=20mW -40 Pin=20mW

12 70
INPUT VSWR r in (-)

HARMONICS (dBc)
2nd
10 60
-50
8 h T @Pout=7W 50
6 40 -60

4 30 3rd
r in @Pout=7W -70
2 20
0 10
-80
390 400 410 420 430 440 450 460 470 480
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
FREQUENCY f(MHz)

OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50 10 50 10
45 Pout 9 45 Pout 9
OUTPUT POWER Pout (dBm)

OUTPUT POWER Pout (dBm)

Gp
DRAIN CURRENT I DD (A)

40 8

DD(A)
Gp 40 8
POWER GAIN Gp(dB)

POWER GAIN Gp(dB)

35 7 35 7

DRAIN CURRENT I
30 6 30 6
25 5 25 5
20 f=400MHz 4 20 4
V DD=12.5V f=440MHz
15 3 V DD=12.5V
V GG=3.5V IDD 15 IDD 3
V GG=3.5V
10 2 10 2
5 1 5 1
0 0 0 0
-12 -8 -4 0 4 8 12 16 -12 -8 -4 0 4 8 12 16
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER
50 10
45 Gp 9
Pout
OUTPUT POWER Pout (dBm)

DRAIN CURRENT I DD (A)

40 8
POWER GAIN Gp(dB)

35 7
30 6
25 5
20 f=470MHz 4
V DD=12.5V
15 V GG=3.5V 3
IDD
10 2
5 1
0 0
-12 -8 -4 0 4 8 12 16
INPUT POWER Pin(dBm)

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

OUTPUT POWER, OUTPUT POWER,
and DRAIN CURRENT versus FREQUENCY and DRAINversus
CURRENT
DRAIN
versus
VOLTAGE
FREQUENCY
18 9 18 9
f=400MHz f=440MHz
16 V GG=3.5V 8 16 8
V GG=3.5V

OUTPUT POWER Pout (W)

OUTPUT POWER Pout (W)

Pin=20m W Pout
14 7 14 Pin=20m W 7

DRAIN CURRENT I DD (A)

DRAIN CURRENT I DD (A)

Pout
12 6 12 6
10 5 10 5
8 4 8 4
6 IDD 3 6 3
IDD
4 2 4 2
2 1 2 1
0 0 0 0
4 5 6 7 8 9 10 11 12 13 14 4 5 6 7 8 9 10 11 12 13 14
DRAIN VOLTAGE VDD (V) DRAIN VOLTAGE VDD (V)

OUTPUT POWER,
and DRAINversus
CURRENT
DRAIN
versus
VOLTAGE
FREQUENCY
18 9
16 f=470MHz 8
V GG=3.5V
OUTPUT POWER Pout (W)

14 Pin=20m W 7
DRAIN CURRENT I DD (A)

12 Pout 6
10 5
8 4
6 IDD 3
4 2
2 1
0 0
4 5 6 7 8 9 10 11 12 13 14
DRAIN VOLTAGE VDD (V)

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
16 8 16 8
f=400MHz Pout f=440MHz
14 V DD=12.5V 7 14 V DD=12.5V
7
OUTPUT POWER Pout (W)

OUTPUT POWER Pout (W)

Pin=20m W Pin=20mW Pout
12 6 12 6

DRAIN CURRENT I DD(A)

DRAIN CURRENT I DD(A)

10 5 10 5
8 4 8 4
6 IDD 3 6 IDD 3
4 2 4 2
2 1 2 1
0 0 0 0
2 2.5 3 3.5 4 2 2.5 3 3.5 4
GATE VOLTAGE VGG(V) GATE VOLTAGE VGG(V)

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE
16 8
f=470MHz
14 V DD=12.5V 7
OUTPUT POWER Pout (W)

Pin=20m W Pout
12 6
DRAIN CURRENT I DD(A)

10 5

8 4
IDD
6 3

4 2
2 1

0 0
2 2.5 3 3.5 4
GATE VOLTAGE V GG (V)

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

OUTLINE DRAWING (mm)

1 INPUT TERMINAL (Pin)

2 GATE BIAS DC SUPPLY TERMINAL (VGG)
3 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
4 OUTPUT TERMINAL (Pout)
5 FIN (GND)

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

TEST BLOCK DIAGRAM Power DUT Spectrum

Meter 5 Analyzer

1 2 3 4

Signal Pre- Directional ZG=50 ZL=50 Power

Directional
Attenuator Attenuator Attenuator
Generator amplifier Coupler Coupler Meter

C1 C2

- + + -
DC Power DC Power
Supply VGG Supply VDD

C1, C2: 4700pF, 22uF in parallel

1 INPUT TERMINAL (Pin)
2 GATE BIAS DC SUPPLY TERMINAL (VGG)
3 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
4 OUTPUT TERMINAL (Pout)
5 FIN (GND)

EQUIVALENT CIRCUIT
3

1 4

2 1 INPUT TERMINAL (Pin)

2 GATE BIAS DC SUPPLY TERMINAL (VGG)
3 DRAIN BIAS DC SUPPLY TERMINAL (VDD)
4 OUTPUT TERMINAL (Pout)
5 FIN (GND)

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is
attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated
with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At Pout=7W, VDD=12.5V and Pin=20mW each stage transistor operating conditions are:
Pin Pout Rth(ch-case) IDD @ T=40% VDD
Stage
(W) (W) (°C/W) (A) (V)
1
st 0.02 1.5 4.5 0.25
nd
12.5
2 1.5 7.0 2.4 1.15
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.25A – 1.5W + 0.02W) x 4.5°C/W = Tcase + 7.4 °C
Tch2 = Tcase + (12.5V x 1.15A – 7.0W + 1.5W) x 2.4°C/W = Tcase + 21.3 °C

For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=7W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (7W/40% – 7W + 0.02W) = 2.85 °C/W
When mounting the module with the thermal resistance of 2.85 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 37.4 °C
Tch2 = Tair + 51.3 °C

The 175°C maximum rating for the channel temperature ensures application under derated conditions.

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

Output Power Control:

By the gate voltage (VGG).
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.

Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50 ?
c) Is the source impedance ZG=50 ?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.

PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:

1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets, please
contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under
a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements. In the application, which is base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and
others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi
Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate
ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating
into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case
there is risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.

Publication Date : Jun. 2019

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<Silicon RF Power Modules >

RA07H4047M
RoHS Compliance, 400-470MHz 7W, 12.5V, 2 Stage Amp. For Portable Radio

10. Design and use environment:

Please avoid use in the place where water or organic solvents can adhere directly to the product and the
environments with the possibility of salt air, caustic gas(hydrosulfuric H2S, sulfurous gas SO2, chlorine gas Cl2,
nitrogen dioxide NO2, ozone O3, etc), dust, salinity, etc. Reliability could be markedly decreased and also there is
a possibility failures could result causing a serious accident. Likewise, there is a possibility of causing a serious
accident if used in an explosive gas environment. Please allow for adequate safety margin in your designs.
11. Please refer to the additional precautions in the formal specification sheet.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.

© 2019 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Jun. 2019

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