SemiWell Semiconductor SCR6C60

Silicon Controlled Rectifiers Symbol

3. Gate
○
Features

▼
○ ○
2. Anode 1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 6 A )
◆ Low On-State Voltage (1.4V(Typ.)@ ITM)

TO-126

General Description

Standard gate triggering SCR is suitable for the application where

requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system. 3
2
1

Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )

Symbol Parameter Condition Ratings Units

VDRM Repetitive Peak Off-State Voltage 600 V

IT(AV) Average On-State Current Half Sine Wave : TC = 106 °C 3.8 A

IT(RMS) R.M.S On-State Current 180° Conduction Angle 6 A

1/2 Cycle, 60Hz, Sine Wave

ITSM Surge On-State Current 66 A
Non-Repetitive

I2 t I2t for Fusing t = 8.3ms 21 A2 s

di/dt Critical rate of rise of on-state current 50 A/㎲

PGM Forward Peak Gate Power Dissipation 5 W

PG(AV) Forward Average Gate Power Dissipation 0.5 W

IFGM Forward Peak Gate Current 2 A

VRGM Reverse Peak Gate Voltage 5.0 V

TJ Operating Junction Temperature - 40 ~ 125 °C

TSTG Storage Temperature - 40 ~ 150 °C

Dec, 2002. Rev. 3 1/5

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCR6C60

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Ratings
Symbol Items Conditions Unit
Min. Typ. Max.

VAK = VDRM
Repetitive Peak Off-State
IDRM TC = 25 °C ─ ─ 10 ㎂
Current
TC = 125 °C ─ ─ 200

VTM Peak On-State Voltage (1) ITM = 9 A tp=380㎲ ─ ─ 1.6 V

VAK = 6 V(DC), RL=10 Ω

IGT Gate Trigger Current (2) TC = 25 °C ─ ─ 15 mA

VD = 6 V(DC), RL=10 Ω
VGT Gate Trigger Voltage (2) TC = 25 °C ─ ─ 1.5 V

VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V

Critical Rate of Rise Off-State Linear slope up to VD = VDRM 67% ,

dv/dt 200 ─ ─ V/㎲
Voltage Gate open TJ = 125°C

IT = 100mA, Gate Open

IH Holding Current TC = 25 °C ─ ─ 20 mA

Rth(j-c) Thermal Impedance Junction to case ─ ─ 3.12 °C/W

Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 89 °C/W

※ Notes :

1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%

2. RGK Current not Included in measurement.

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 SCR6C60
Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature

140

Max. Allowable Case Temperature [ C]

1
10

o
VGM(5V) 120
o
PGM(5W) θ = 180
Gate Voltage [V]

100

0
PG(AV)(0.5W)
10 π 2π
IGM(2A)
o 80
25 C
θ
360°
60
θ : Conduction Angl e
VGD(0.2V)
-1
10 40
-1
10 10
0
10
1 2
10
3
10 10
4 0 1 2 3 4

Gate Current [mA] Average On-State Current [A]

Fig 3. Typical Forward Voltage Fig 4. Thermal Response

100 10
1
Transient Thermal Impedance [ C/W]
o
On-State Current [A]

0
10

o
10 125 C

-1
10
o
25 C

-2
1 10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10
-5
10
-4
10
-3
10
-2
10
-1 0
10 10
1

On-State Voltage [V] Time (sec)

Fig 5. Typical Gate Trigger Voltage vs. Fig 6. Typical Gate Trigger Current vs.
Junction Temperature Junction Temperature
10 10
VGT(25oC)

IGT(25 C)
VGT(t C)

IGT(t C)
o
o

1
o

0.1 0.1
-50 0 50 100 150 -50 0 50 100 150

o o
Junction Temperature[ C] Junction Temperature[ C]

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SCR6C60

Fig 7. Typical Holding Current Fig 8. Power Dissipation

10 7

o
θ = 180

Max. Average Power Dissipation [W]

6
o
o θ = 120
o
θ = 90
5
θ = 30
o θ = 60
IH(25oC)
IH(t C)

4
o

1
3

0.1 0
-50 0 50 100 150 0 1 2 3 4
o
Junction Temperature[ C] Average On-State Current [A]

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 SCR6C60
TO-126 Package Dimension

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 7.5 7.9 0.295 0.311
B 10.8 11.2 0.425 0.441
C 14.2 14.7 0.559 0.579
D 2.7 2.9 0.106 0.114
E 3.8 0.150
F 2.5 0.098
G 1.2 1.5 0.047 0.059
H 2.3 0.091
I 4.6 0.181
J 0.48 0.62 0.019 0.024
K 0.7 0.86 0.028 0.034
L 1.4 0.055
φ 3.2 0.126

A D

φ
G L
F
3
2
C
1
1. Gate
2. Anode
J K 3. Cathode
H

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