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Tut 1

This document is a tutorial on semiconductor materials and pn junctions, covering calculations related to electron and hole concentrations in silicon and GaAs, as well as conductivity, diffusion current density, and reverse-bias characteristics. It includes specific problems with provided answers for various scenarios involving doping concentrations, built-in potentials, and diode behaviors. The tutorial serves as a comprehensive guide for understanding key concepts in basic electronics related to semiconductors.

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Adarsh Kumar Meher
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9 views2 pages

Tut 1

This document is a tutorial on semiconductor materials and pn junctions, covering calculations related to electron and hole concentrations in silicon and GaAs, as well as conductivity, diffusion current density, and reverse-bias characteristics. It includes specific problems with provided answers for various scenarios involving doping concentrations, built-in potentials, and diode behaviors. The tutorial serves as a comprehensive guide for understanding key concepts in basic electronics related to semiconductors.

Uploaded by

Adarsh Kumar Meher
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Basic Electronics

TUTORIAL 1

Topic covered: Semiconductor materials and pn junction

1. (a) Calculate the concentration of electrons and holes in silicon that has a concentration of
acceptor atoms equal to 5 × 1016 cm−3. Is the semiconductor n-type or p-type? (b) Repeat
part (a) for GaAs. [ni = 1.5×1010 cm-3 (Si) and ni = 1.8×106 cm-3 (GaAs)]
[Ans: 4.5×103 cm-3 ; 6.48×10-5 cm-3 ]
2. The electron concentration in silicon at T = 300K is n0 = 5 × 1015 cm−3. (a) Determine the
hole concentration. (b) Is the material n-type or p-type? (c) What is the impurity doping
concentration?
[Ans: 4.5×104 cm-3 ; 5×1015 cm-3 ]
3. In GaAs, the mobilities are μn = 8500 cm2/V–s and μp = 400 cm2/V–s. (a) Determine the
range in conductivity for a range in donor concentration of 1015 ≤ Nd ≤ 1019 cm−3. (b) Using
the results of part (a), determine the range in drift current density if the applied electric field
is E = 0.10 V/cm.
[Ans: 1.36 -1.36×104 Ω-cm; 0.136-1.36×104 A/cm2 ]
4. The hole concentration in silicon is given by
p(x) = 104 + 1015 exp(−x / Lp); x ≥ 0

The value of Lp is 10μm. The hole diffusion coefficient is Dp = 15 cm2/s. Determine the
hole diffusion current density at (a) x = 0, (b) x = 10μm, and (c) x = 30μm.
[Ans: 2.4 A/cm2; 0.883 A/cm2, 0.119 A/cm2]
5. Consider a silicon pn junction. The n-region is doped to a value of Nd =1016 cm−3. The
built-in potential barrier is to be Vbi = 0.712 V. Determine the required p-type doping
concentration. [Ans: 1.76 ×1016]
6. Consider a uniformly doped GaAs pn junction with doping concentrations of Na =
5×1018cm−3 and Nd = 5×1016cm−3. Plot the built-in potential barrier Vbi versus temperature
for 200K ≤ T ≤ 500K.

7. The zero-bias capacitance of a silicon pn junction diode is Cjo = 0.02pF and the built-in
potential is Vbi = 0.80V. The diode is reverse biased through a 47-k resistor and a voltage
source. (a) For t < 0, the applied voltage is 5 V and, at t = 0, the applied voltage drops to
zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As
an approximation, use the average diode capacitance between the two voltage levels.) (b)
1
Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change
from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
[Ans: 5.44×10-10 sec; 8.09×10-10sec]
8. (a) At what reverse-bias voltage does the reverse-bias current in a silicon pn junction diode
reach 90 percent of its saturation value? (b) What is the ratio of the current for a forward-
bias voltage of 0.2 V to the current for a reverse bias voltage of 0.2 V?
[Ans: -0.0599 V, 2190]
9. The reverse-bias saturation current for a set of diodes varies between 5 ×10−14 ≤ IS ≤
5×10−12A. The diodes are all to be biased at ID = 2mA. What is the range of forward-bias
voltages that must be applied? [Ans: 0.6347 V to 0.5150 V]

10. (a) A germanium pn junction has a diode current of ID = 1.5mA when biased at VD = 0.30V.
What is the reverse-bias saturation current? (b) Using the results of part (a), determine the
diode current when the diode is biased at (i) VD = 0.35 V and (ii) VD = 0.25 V.
[Ans: 1.462×10-8 A; 10.3mA; 0.219mA]

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