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Exp 3

The document outlines an experiment to plot the gain-frequency characteristics of a BJT amplifier, focusing on measuring collector characteristics and DC bias values. It details the objectives, required equipment, and a step-by-step procedure for conducting the experiment, including circuit construction and data recording. The experiment concludes with the analysis of results and comparisons between experimental and simulated values using PSPICE.

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Vipul Sharma
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11 views3 pages

Exp 3

The document outlines an experiment to plot the gain-frequency characteristics of a BJT amplifier, focusing on measuring collector characteristics and DC bias values. It details the objectives, required equipment, and a step-by-step procedure for conducting the experiment, including circuit construction and data recording. The experiment concludes with the analysis of results and comparisons between experimental and simulated values using PSPICE.

Uploaded by

Vipul Sharma
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EXPERIMENT 1: PLOT GAIN-FREQUENCY CHARACTERISTICS

OF BJT AMPLIFIER.
Objectives:

 To graph the collector characteristics of a transistor using experimental


methods.
 To measure AC and DC voltages in a common-emitter amplifier.
Equipment:
Instruments
1 DC Power Supply
3 Digital Multimeter
(DMM) 1 Function
Generator
1 Oscilloscope

Components
Capacitors: 15 μF, 10 μF
Resistors: 1 k, 3 k, 10 k, 33 k, 330 k, 10 k
potentiometer, 1M potentiometer
Transistors: 2N3904
Procedure:
Part A : The Collector Characteristics (BJT)*Using two potentiometers*

1. Construct the circuit of Fig. 4.1. Vary the 1M potentiometer to set IB
= 10
A as in Table 4.1.
20V
DC Supply

- VRC + B

A RC=1k
B Base
RB=330k A
1M Collector
Emitter
C IB 10k

Fig. 4.1

2. Set the VCE to 2V by varying the 10k potentiometer as required by


the first line of Table 4.1.
3. Record the VRC and VBE values in Table 4.1.
4. Vary the 10 k potentiometer to increase VCE from 2V to the values
appearing in Table 4.1. (Note: IB should be maintained at 10 A for
the range of VCE levels.) Record VRC and VBE values for each of the
measured VCE values. Use the mV range for VBE.
5. Repeat step 2 through 5 for all values of IB indicated in Table 4.1.
6. Compute the values of IC (from IC = VRC/RC) and IE (from IE = IB+IC).
Use measured resistor value for RC.
7. Using the data of Table 4.1, plot the collector characteristics of the
transistor on a graph paper. (Plot IC versus VCE for the various values
of IB. Choose an appropriate scale for IC and label each IB curve).

Part B : Common-Emitter DC Bias


1. Measure all resistor values (R1, R2, RC and RE) from circuit in Fig. 4.2
using DMM.
2. Calculate DC Bias values (VB, VE, VC and IE) and record them.
3. Calculate AC dynamic resistance, re.
4. Construct circuit as of Fig. 4.2 and set VCC = 10 V.
5. Measure the DC bias values (VB, VE, VC and IE) and record them.
6. Calculate IE using values obtained in Step 5.
7. Calculate re using the value of IE from Step 6.
8. Compare value of re obtained both from Step 3 & 7.

DC Supply

Fig. 4.2

PSPICE Instructions:

Using PSPICE Simulation, find the DC Bias values (VB, VE, VC and IE) for the circuit in
Fig.
Compare the values obtained from PSPICE with the experimental ones.Results and
Calculations:
Part A – Step 3
IB VCE VRC IC VBE IE
(A) (V) (V) (mA) (V) (mA)
meas meas (calc) meas (calc)
2
4
10 6
8

2
4
30 6
8

2
50 4
6
8
Table
4.1
Part B
R1 (measured) =_________ , R2 (measured) =__________ , RC
(measured)= ________________ RE(measured) = ____________
VB (calculated) = ______________-__, VE (calculated) = ________
VC (calculated) =_____________ , IE (calculated) = ____________
re (calculated) =

VB (measured) = __________, VE (measured) = ____________VC


(measured) = ,IE (calculated) using
measured values of VE and RE =
I E  VE / RE

re (measured) = , using measured IE from Step 6.


Graph IC versus VCE for each value of IB (use graph paper)

RESULT : Thus we have observed gain-frequency characteristics of BJT


amplifier.

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