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The document outlines a laboratory experiment for studying the characteristics of SCR (Silicon Controlled Rectifier) and TRIAC (Triode for Alternating Current) in the context of power electronics. It includes objectives, apparatus needed, theoretical background, procedures for conducting the experiments, and post-lab questions to assess understanding. Key concepts such as latching current, holding current, and the various modes of operation for TRIAC are also discussed.

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0% found this document useful (0 votes)
16 views9 pages

Exp 1

The document outlines a laboratory experiment for studying the characteristics of SCR (Silicon Controlled Rectifier) and TRIAC (Triode for Alternating Current) in the context of power electronics. It includes objectives, apparatus needed, theoretical background, procedures for conducting the experiments, and post-lab questions to assess understanding. Key concepts such as latching current, holding current, and the various modes of operation for TRIAC are also discussed.

Uploaded by

vmpawankar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Power Electronics in

TY BTECH (PEC): 2024–25 Electric mobility

Expt. No. 1 Date:

Characteristics of SCR, TRIAC

Objectives

1. To study and plot the VI characteristics of SCR, TRIAC

2. Observe the effect of gate current

Pre-lab Questions:

1. Define Latching current

2. Define Holding current

3. Explain the different working modes of operation of a TRIAC


Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Apparatus:

1. Power supply
2. Multimeter
3. Trainer kit
4. Trainer kit ‘TRIAC CHARACTERISTICS’ (POWERCON make)
5. 0-300V DC through variac
6. 0-30V/200 mA D.C.
7. 0-25mA and 0-100 mA D.C. Ammeter’s.
8. 0-500 V D.C Voltmeters
9. Connecting links

Theory (SCR):

A thyristor is a four-layer semiconductor device of PNPN structure with three PN


junctions. It has three terminal anode, cathode and gate. When the anode voltage
is made positive with respect to cathode, the junctions J1 and J3 are forward biased.
The junctions J2 is reversed biased and, only a small leakage current flows from
anode to cathode. The thyristor is then said to be in the OFF mode. If Anode to
Cathode voltage is increased to a sufficiently large value, the reversed biased
junction J2 will break. This is known as avalanche breakdown and the corresponding
voltage is called forward breakdown voltage VBO. Since junctions J1 and J3 are
already forward biased, there will be free movement of carriers across all three
junctions, resulting in a large forward anode current. The device will then be in a
conducting state or on state. The voltage drop would be due to the ohmic drop in
the four layers and it is small, typically, 1V. In the on state, the anode current is
limited by an external impedance or resistance.

Figure 1V-I Characteristics of SCR


Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Latching current is the minimum anode current required to maintain the thyristor in
the on state immediately after the thyristor has been turned on and the gate signal
has been removed Once the thyristor is turned on, it behaves like a conducting diode
and there is no control over the device. The device will continue to conduct because
there is no depletion layer on the junction J2 due to the free movements of the
carriers. However, if the forward anode current is reduced below a level known as
the holding current, a depletion layer will develop around the junction J2, due to
reduced number of carriers and the thyristor will be in the blocking state. Holding
current is the minimum anode current required to maintain the thyristor in the on
state. Holding current is less than latching current. A thyristor can be turned on by
increasing the forward voltage VAK beyond VBO, but such a turn on could be
destructive. In practice, the forward voltage is maintained below VBO and the
thyristor is turned on by applying a positive voltage between its gate and cathode.
Once a thyristor is turned on by a gating signal and its anode current is greater than
holding current, the device continues to conduct due to positive feedback, even if
the gating signal is removed.

Figure 2 Circuit Diagram for SCR Characteristics

Procedure:

1. Connect the circuit as per the connection diagram.


2. Keep the gate current a fixed value (I G1).
3. By varying the anode to cathode voltage note the voltage (Vak)
and current (Ia).
4. Note the forward break over voltage(VBO)
5. Change the gate current value (IG1, IG2) and repeat steps 3 and 4

6. Plot the graph between Vak and Ia , denoting VBO's.


Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Observation Table:

IG1= mA I G2= mA

Vak (V) Ia (mA) Vak (V) Ia (mA)

Plot the characteristics of SCR for the above reaqdings


Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Theory(TRIAC):

Thyristor Characteristics: ‐ The TRIAC is a three terminal, four layer semiconductor


device for controlling current. It gains its name from the term TRIode for Alternating
Current. Its three terminals are MT1, MT2 and the gate (G). TRIAC is the most
widely used member of the thyristor family. It is basically a combination of two SCRs
connected in antiparallel configuration within the same chip. Unlike SCRs, it is a
bidirectional device, and can be triggered either by positive or negative gate signal.
Because of its bidirectional conduction property, TRIAC is widely used in the field of
Power electronics for control purposes. TRIAC BT136 is the most widely used in the
fan regulator. Like an SCR, a TRIAC also starts conducting only when the break
over voltage is reached. Earlier to that the leakage current which is very small in
magnitude, flows through the device and therefore it remains in the OFF state. The
first quadrant characteristic is just like an SCR, but in the third quadrant
characteristics of a TRIAC is identical to its first quadrant, except that, as the
polarities of the main terminals change, the direction of current changes. MT2 is
positive with respect to MT1 in the first quadrant and if is negative it is negative in
the quadrant. The device when starts conducting allows very heavy amount of
current to flow through it. This high inrush of current must be limited by using
external resistance, or it may otherwise damage the device. The gate is the control
terminal of the device. By applying proper signal at the gate, the firing angle of the
device can be changed thus, the phase control process can be achieved. Its main
limitation as comparison to SCRs is, its low power handling capacity.
Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Figure 2 Circuit Diagram for TRIAC Characteristics

Triac can be turned on by either positive gate drive or negative gate drive.
Thus we have four triggering modes namely –

1. I+ First quadrant mode,


MT2 positive with respect to MT1., and gate is positive

2. III+ Third quadrant with respect to MT1., and gate is positive


MT2 negative with respect to MT1., and gate is positive

3. I- First quadrant mode, MT2 positive with respect to MT1., and


gate is negative

4. III+ Third quadrant mode, MT2 negative with respect to MT1., and
gate is negative

The sensitivity of triac is defined as gate current required to turn on. More the
gate current required, less is the sensitivity. The sensitivity of triac is best in
I+mode, moderate in I- and III modes and lowest in III+mode.
Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Procedure:

1.Connect the circuit as per the connection diagram.


2.Gate current(IG) can be adjusted by using pot and by varying
0-30V D.C voltage.
3.Slowly increase anode voltage(VA ) by varying 0-300V D.C.power
supply and take reading of VA and anode current IA. Carefully
observe the point at which triac starts conducting. Once the
maximum current reached anode voltage reading starts
decreasing. This action indicates firing of TRIAC. Note down anode
current reading
4. Reduce the 0-300V DC supply and switch off the power supply.
5. Repeat the procedure of reversing the polarities of anode supply
voltage and record the observation in table.
6.Repeat the procedure for negative gate supply voltage
7.Plot the graph of Va versus Ia
Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Observation Table:

Ig= mA -Ig= mA

VMT2 = I anode (mA) VMT2 = I anode (mA)


Positive Negative
Power Electronics in
TY BTECH (PEC): 2024–25 Electric mobility

Post-lab Questions:

1. What is the effect of gate current on break over voltage?


Explain with justification.

2. Discuss the methods of turning on the SCR when the gate is


disconnected

3. What are the applications of TRIAC

4.Compare SCR, TRIAC & DIAC

Conclusion:

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