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CO-2 Part-1

The document discusses the importance of simple models for estimating circuit performance, focusing on resistance and capacitance in MOS transistors. It provides details on resistance estimation, sheet resistance values for various materials, and capacitance estimation related to MOS systems. Additionally, it highlights the impact of parasitic capacitances and routing capacitance on the overall performance of circuits.

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lakshmi
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7 views44 pages

CO-2 Part-1

The document discusses the importance of simple models for estimating circuit performance, focusing on resistance and capacitance in MOS transistors. It provides details on resistance estimation, sheet resistance values for various materials, and capacitance estimation related to MOS systems. Additionally, it highlights the impact of parasitic capacitances and routing capacitance on the overall performance of circuits.

Uploaded by

lakshmi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Circuit characterization and

Performance Estimation
Introduction

➢ Need simple models to estimate system


performance in terms of signal delay and power
dissipation.
➢ Each layer in an MOS transistor has both
resistance and capacitance that are fundamental
components in estimating the performance of a
circuit or system.
➢ They also have inductance characteristics that is
assumed to be negligible.
Resistance Estimation
The resistance of a uniform slab of conducting material may be
expressed as:
 l l
R = ( )( ) where  =resistivity, t=thickness, =length/width
t w l w
Alternatively as R = Rs ( ) (ohms) where R s = sheet resistance=R
w

w w

l l

t t

1 Rectangular Block 4 Rectangular Blocks


R = R (L/W)  R = R (2L/2W) 
= R (L/W) 
Sheet Resistance
Typical sheet resistance values for materials are very well characterized

Typical Sheet Resistances for 5µm Technology

Layer Rs (Ohm / Sq)


Aluminium 0.03
N Diffusion 10 – 50
Silicide 2–4
Polysilicon 15 - 100
N-transistor Channel 104

P-transistor Channel 2.5 x 104


Sheet Resistance
Note: L defined parallel to current and W defined perpendicular to current.
Sheet Resistance
Rs for poly is 4 /square in 1micron tech.
Rpoly = 4 /square x (19/3 + 11/4 + 19/3) squares = 61.6 .
A note: A corner square has a sheet resistance of ~0.5 Rs.
Sheet Resistance
Sheet Resistance
Capacitance Estimation
✓Switching speed of MOS systems strongly dependent:
✓Parasitic capacitances associated with the MOS transistor.
✓Interconnect capacitance of "wires".
✓Resistance of transistors and wires.

✓Total load capacitance on the output of a CMOS gate is sum of:


✓Gate capacitance (of receiver logic gates downstream).
✓Driver diffusion (source/drain) capacitance.
✓Routing ( line ) capacitance of substrate and other wires.
Area capacitance of layers
Area capacitance given in pF/µm2
Standard unit of capacitance
=15
MOSFET capacitances
MOS Capacitor Characteristics

✓The capacitance-voltage characteristics of an MOS structure depend on the


state of the semiconductor surface.
✓Depending on gate voltage, the surface may be in :
accumulation
depletion
inversion
MOS Capacitor Characteristics

In accumulation:

In deletion mode
MOS Capacitor Characteristics
In inversion mode:
Diagrammatic representation of parasitic
Capacitances of MOS

✓The capacitance of a MOS transistor can be modeled using 5 capacitors


✓The overlap of gate over the drain and source is assumed to be zero.
✓An approximation of gate capacitance (Cgs , Cgd and Cgb ) is given as:

K SiO 2 ox
Cox =
tox
Estimating Routing Capacitance
Routing capacitance between metal and poly can be approximated using a
parallel-plate model.

✓The parallel-plate model approximation ignores fringing fields.


✓The effect of the fringing fields is to increase the effective area of the plates.
✓Consequently, poly and metal lines will actually have a higher capacitance than that
predicted by the model.

✓As line widths are scaled, the width (w) and heights of wires tend to reduce less
than their separations.
✓Accordingly, this fringing effect increases in importance.
MOS Inverter with Resistive load
MOS Inverter with Resistive load

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