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Report 1.2

The report details the measurement and analysis of the input and output characteristics of a Bipolar Junction Transistor (BJT) in a Common Emitter configuration. Key parameters such as output resistance, current gain, and the DC operating point (Q-point) were determined through experimental data and simulations. The findings indicate that as the base current increases, the output resistance rises while the current gain decreases.

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ee23bt028
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12 views10 pages

Report 1.2

The report details the measurement and analysis of the input and output characteristics of a Bipolar Junction Transistor (BJT) in a Common Emitter configuration. Key parameters such as output resistance, current gain, and the DC operating point (Q-point) were determined through experimental data and simulations. The findings indicate that as the base current increases, the output resistance rises while the current gain decreases.

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ee23bt028
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Report 2.

2
Experiment number : 2

Input and Output characteristics of


BJT in CE configuration

Name = Jadhav Aditya Santosh (EE23BT027)


Mali Bhavesh Jitendra (EE23BT028)
1. Objective :

Measurement of output (IC-VCE) characteristics of BJT

Analyze the input characteristics of a Bipolar Junction


Transistor (BJT) configured in a Common Emitter (CE) setup
through both breadboard implementation and NGSPICE
simulation

Determine key parameters such as current gain, input


resistance, output resistance, and the DC operating point (Q
point).
Observation : Input characteristics

Reading for constant Ib=35.1 µA :


Graph for constant Ib=35.1 µA :
Reading for constant Ib=37.4 µA :
Graph for constant Ib=37.4 µA :
Calculation :

1. Output Resistance (Ro) :

Output resistance is found from the slope of the Ic


vs. Vce curve at a constant base current (IB​)

Ro​=(​Vce2​−Vce1)/(Ic2​−Ic1)

For Ib=35.1 µA :
Take 2 points (0.009,0.021) and (0.069,0.324)
Ro=(0.069-0.009)/(0.324-0.021)= 198.01 Ohm

For Ib=37.4.1 µA :
Take 2 points (0.0084,0.032) and (0.078,0.382)
Ro=(0.078-0.0084)/(0.382-0.032)= 198.85 Ohm
2. Current Gain (β) :

β=Ic/Ib
FInding current gain in saturation region

For Ib=35.1 µA :
β=Ic/Ib =(0.49 mA)/(35.1 µA)=13.96

For Ib=37.4 µA :
β=Ic/Ib =(0.49 mA)/(37.4 µA)=13.10

3) Q-point

The Q-point is generally selected at a moderate IC_CC​


and VCE_{CE}CE​value within the active region. Based
on the given data, we can approximate the Q-point by
averaging the values:

VCE(Q)​=(20.069+0.078​)/2=0.0735V

IC(Q)​=(20.324+0.382​)/2=0.353mA
Q-point is

(VCE(Q)​,IC(Q)​)=(0.0735V,0.353mA)

Conclusion :

The output characteristics show that when the base


current increases from Ib1=35.1 µA to Ib2=37.4 µA :

1.Output Resistance increases


2.Current gain decreases
___________________________________________________________

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