2N3906

General Purpose
Transistors
PNP Silicon

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Features
• Pb−Free Packages are Available* COLLECTOR
3

2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 1
Collector − Emitter Voltage VCEO 40 Vdc EMITTER

Collector − Base Voltage VCBO 40 Vdc

Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC 200 mAdc TO−92
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29
Derate above 25°C 5.0 mW/°C STYLE 1

Total Power Dissipation @ TA = 60°C PD 250 mW

12 1
2
Total Device Dissipation @ TC = 25°C PD 1.5 W 3 3
Derate above 25°C 12 mW/°C STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range AMMO PACK

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
2N
Stresses exceeding Maximum Ratings may damage the device. Maximum 3906
Ratings are stress ratings only. Functional operation above the Recommended
ALYWG
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. G
1. Indicates Data in addition to JEDEC Requirements.

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

February, 2010 − Rev. 4 2N3906/D
 2N3906

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 60 − −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 80 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 −
Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc − 0.4

Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) 0.65 0.85 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95

SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10− 4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos
Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td − 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts − 225 ns
Fall Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 75 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

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 2N3906

ORDERING INFORMATION
Device Package Shipping†
2N3906 TO−92 5000 Units / Bulk
2N3906G TO−92 5000 Units / Bulk
(Pb−Free)

2N3906RL1 TO−92 2000 / Tape & Reel

2N3906RL1G TO−92 2000 / Tape & Reel
(Pb−Free)

2N3906RLRA TO−92 2000 / Tape & Reel

2N3906RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

2N3906RLRM TO−92 2000 / Tape & Ammo Box

2N3906RLRMG TO−92 2000 / Tape & Ammo Box
(Pb−Free)

2N3906RLRP TO−92 2000 / Tape & Ammo Box

2N3906RLRPG TO−92 2000 / Tape & Ammo Box
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

3V

275
< 1 ns
+0.5 V 10 k

CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

3V
+9.1 V < 1 ns

275

10 k
0

1N916 CS < 4 pF*

10 < t1 < 500 ms

t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

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3
 2N3906

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn −On Time Figure 6. Fall Time

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 2N3906

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0 IC = 0.5 mA
SOURCE RESISTANCE = 200 W
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 7. Figure 8.

h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

70

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

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5
 2N3906

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
-55°C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 -55°C TO +25°C

-0.5
0.4 +25°C TO +125°C
-1.0
VCE(sat) @ IC/IB = 10 -55°C TO +25°C
0.2 qVB FOR VBE(sat)
-1.5

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. “ON” Voltages Figure 16. Temperature Coefficients

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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
SCALE 1:1 ISSUE AM
DATE 09 MAR 2007

12 1
2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
AMMO PACK

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D G 2.40 2.80
J 0.39 0.50
G K 12.70 ---
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

STYLES ON PAGE 2

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 1 PAGE 1 OFXXX3
 TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 2 PAGE 2 OFXXX3
 DOCUMENT NUMBER:
98ASB42022B

PAGE 3 OF 3

ISSUE REVISION DATE

AM ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. 09 MAR 2007

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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© Semiconductor Components Industries, LLC, 2007 Case Outline Number:

March, 2007 − Rev. 11AM 29
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