P-N Junction

Semiconductors are materials whose conductivity lies between conductors and

insulators. Semiconductors are classified as intrinsic semiconductors and extrinsic
semiconductors. Extrinsic semiconductors are further classified as N-type and P-type
semiconductors.

The P-N junction is formed between the p-type and the n-type semiconductors. In this
session, let us know more about the P-N Junction.

Table of Contents:

 What is P-N Junction?

 Formation of P-N Junction
 Biasing Conditions for the P-N Junction Diode
 Forward Bias
 Reverse Bias
 P-N Junction Formula
 How does current flow in P-N junction diode?
 V-I Characteristics of P-N Junction Diode
 Applications of P-N Junction Diode
 Frequently Asked Questions – FAQs

What is P-N Junction?

Definition: A P-N junction is an interface or a boundary between two semiconductor
material types, namely the p-type and the n-type, inside a semiconductor.

In a semiconductor, the P-N junction is created by the method of doping. The p-side or
the positive side of the semiconductor has an excess of holes, and the n-side or the
negative side has an excess of electrons. The process of doping is explained in further
detail in the next section.

Formation of P-N Junction

As we know, if we use different semiconductor materials to make a P-N junction, there
will be a grain boundary that would inhibit the movement of electrons from one side to
the other by scattering the electrons and holes and thus, we use the process of doping.
We will understand the process of doping with the help of this example. Let us consider
a thin p-type silicon semiconductor sheet. If we add a small amount of pentavalent
impurity to this, a part of the p-type Si will get converted to n-type silicon. This sheet will
now contain both the p-type region and the n-type region and a junction between these
two regions. The processes that follow after forming a P-N junction are of two types –
diffusion and drift. There is a difference in the concentration of holes and electrons at
the two sides of a junction. The holes from the p-side diffuse to the n-side, and the
electrons from the n-side diffuse to the p-side. These give rise to a diffusion current
across the junction.

Also, when an electron diffuses from the n-side to the p-side, an ionised donor is left
behind on the n-side, which is immobile. As the process goes on, a layer of positive
charge is developed on the n-side of the junction. Similarly, when a hole goes from the
p-side to the n-side, an ionized acceptor is left behind on the p-side, resulting in the
formation of a layer of negative charges in the p-side of the junction. This region of
positive charge and negative charge on either side of the junction is termed as the
depletion region. Due to this positive space charge region on either side of the junction,
an electric field with the direction from a positive charge towards the negative charge is
developed. Due to this electric field, an electron on the p-side of the junction moves to
the n-side of the junction. This motion is termed the drift. Here, we see that the direction
of the drift current is opposite to that of the diffusion current.
Biasing Conditions for the P-N Junction Diode
There are two operating regions in the P-N junction diode:

 P-type
 N-type

There are three biasing conditions for the P-N junction diode, and this is based on the
voltage applied:

 Zero bias: No external voltage is applied to the P-N junction diode.

 Forward bias: The positive terminal of the voltage potential is connected to the p-type while
the negative terminal is connected to the n-type.
 Reverse bias: The negative terminal of the voltage potential is connected to the p-type and
the positive is connected to the n-type.

Forward Bias
When the p-type is connected to the battery’s positive terminal and the n-type to the
negative terminal, then the P-N junction is said to be forward-biased. When the P-N
junction is forward biased, the built-in electric field at the P-N junction and the applied
electric field are in opposite directions. When both the electric fields add up, the
resultant electric field has a magnitude lesser than the built-in electric field. This results
in a less resistive and thinner depletion region. The depletion region’s resistance
becomes negligible when the applied voltage is large. In silicon, at the voltage of 0.6 V,
the resistance of the depletion region becomes completely negligible, and the current
flows across it unimpeded.

Reverse Bias

When the p-type is connected to the battery’s negative terminal and the n-type is
connected to the positive side, the P-N junction is reverse biased. In this case, the built-
in electric field and the applied electric field are in the same direction. When the two
fields are added, the resultant electric field is in the same direction as the built-in electric
field, creating a more resistive, thicker depletion region. The depletion region becomes
more resistive and thicker if the applied voltage becomes larger.
P-N Junction Formula
The formula used in the P-N junction depends upon the built-in potential difference
created by the electric field is given as:

𝐸0=𝑉𝑇𝑙𝑛[𝑁𝐷.𝑁𝐴𝑛𝑖2]

Where,

 E0 is the zero bias junction voltage

 VT is the thermal voltage of 26mV at room temperature
 ND and NA are the impurity concentrations
 ni is the intrinsic concentration.

How does current flow in the PN junction diode?

The flow of electrons from the n-side towards the p-side of the junction takes place
when there is an increase in the voltage. Similarly, the flow of holes from the p-side
towards the n-side of the junction takes place along with the increase in the voltage.
This results in the concentration gradient between both sides of the terminals. Due to
the concentration gradient formation, charge carriers will flow from higher-concentration
regions to lower-concentration regions. The movement of charge carriers inside the P-N
junction is the reason behind the current flow in the circuit.

V-I Characteristics of P-N Junction Diode

VI characteristics of P-N junction diodes is a curve between the voltage and current
through the circuit. Voltage is taken along the x-axis while the current is taken along the
y-axis. The above graph is the V-I characteristics curve of the P-N junction diode. With
the help of the curve, we can understand that there are three regions in which the diode
works, and they are:

 Zero bias
 Forward bias
 Reverse bias

When the P-N junction diode is in zero bias condition, there is no external voltage
applied and this means that the potential barrier at the junction does not allow the flow
of current.

When the P-N junction diode is in forward bias condition, the p-type is connected to the
positive terminal while the n-type is connected to the negative terminal of the external
voltage. When the diode is arranged in this manner, there is a reduction in the potential
barrier. For silicone diodes, when the voltage is 0.7 V and for germanium diodes, when
the voltage is 0.3 V, the potential barriers decrease, and there is a flow of current.

When the diode is in forward bias, the current increases slowly, and the curve obtained
is non-linear as the voltage applied to the diode overcomes the potential barrier. Once
the diode overcomes the potential barrier, the diode behaves normally, and the curve
rises sharply as the external voltage increases, and the curve obtained is linear.
When the P-N junction diode is in negative bias condition, the p-type is connected to the
negative terminal while the n-type is connected to the positive terminal of the external
voltage. This results in an increase in the potential barrier. Reverse saturation current
flows in the beginning as minority carriers are present in the junction.

When the applied voltage is increased, the minority charges will have increased kinetic
energy which affects the majority charges. This is the stage when the diode breaks
down. This may also destroy the diode.

Applications of P-N Junction Diode

 P-N junction diode can be used as a photodiode as the diode is sensitive to the light when
the configuration of the diode is reverse-biased.
 It can be used as a solar cell.
 When the diode is forward-biased, it can be used in LED lighting applications.
 It is used as rectifier in many electric circuits and as a voltage-controlled oscillator in
varactors.

Physics Related Articles

Semiconductor Diode Zener Diode

Extrinsic Semiconductors Electric Field Lines

Frequently Asked Questions – FAQs

Q1

What happens when the battery voltage is increased in a forward-biased

P-N junction?

The current through the junction increases when the battery voltage is increased in a
forward-biased P-N junction.
Q2

What happens when a P-N junction is reverse biased?

The holes and electrons tend to move away from the junction.
Q3

What are the two breakdown mechanisms of the P-N junction?

The two breakdown mechanisms are Zener breakdown and Avalanche breakdown.
Q4

What is the static resistance of a diode?

Static resistance of a diode is defined as the ratio of the DC voltage applied across the
diode to the DC current flowing through the diode.
Q5

What is the dynamic resistance of a diode?

Dynamic resistance of a diode is defined as the ratio of change in voltage to the change
in current.
Q6

What is reverse resistance?

Reverse resistance is defined as the resistance offered by the P-N junction diode when
it is reverse biased.
Q7
What is a semiconductor?
A semiconductor is a material whose conductivity stays between an insulator and a
conductor.
Q8
What are the two types of semiconductors?
N-type semiconductors and p-type semiconductors are the two types of
semiconductors.
Q9
What are n-type semiconductors?
N-type semiconductors are intrinsic semiconductors doped with antimony (Sb),
phosphorus (P), or arsenic (As) as doping impurities.
Q10
What is meant by doping?
In semiconductor technology, doping is the process of intentional infliction of impurities
into intrinsic semiconductors for the objective of remodelling their optical, structural, and
electrical properties.
Q11
What is a diode?
A diode is an electrical device that enables the current to flow only in one direction. In
an electrical circuit diagram, a diode is denoted by a triangle symbol with a line along
one vertex.
Q12
What are the main types of diodes?
Light-emitting diode, avalanche diode, laser diode, Schottky diode, photodiode, p-n
junction diode, and Zener diode are the main types of diodes.
Q13
What are the three regions in which diodes function?
Forward bias, zero bias and reverse bias are the three regions in which diodes function.
Q14
Give one application of P-N junction diodes.
P-N junction diodes are used as rectifiers in numerous electric circuits. They are also
used as voltage-controlled oscillators in varactors.

EXAMPLE: 1

Determine the current ID and the diode voltage VD for the following circuit in Fig. 1
with VDD = 5V and R = 1k. Assume that the diode has a current of 1 mA at a voltage of
0.7 V and its voltage drop changes by 0.1V for every decade change in current.

R ID

VDD VD

Fig. 1 A simple circuit used to illustrate the analysis of the circuits in which the diode is

forward conducting.
Solution:

To begin the iteration, we assume that VD = 0.7 V and the use equation to
determine the current,

ID = VDD - VD

= (5 – 0.7)/ 1k = 4.3 mA

We then use the diode equation to obtain a better estimate for VD. This can be done by
following equation:

V2 – V1 = 2.3nVT log(I2/I1)

For this case, 2.3n VT = 0.1V. Thus

V2 = V1 + 0.1 log (I2/I1)

Substituting V1 = 0.7, I1 = 1 mA, and I2 = 4.3mA result in V2 = 0.763V. Thus the results
of the first iteration are ID = 4.3 mA and VD = 0.763.

The second iteration proceeds in a similar manner:

ID = 5 -0.763 = 4.237 mA

1k

V2 = 0.7763 + 0.1 log(4.237/ 4.3)

= 0.762 V

Thus the second iteration yields ID = 4.237 mA and VD = 0.762 V. Since these values
are not much different from the values obtained after the first iteration, no further
iterations are necessary, and the solution is ID = 4.237 mA and VD = 0.762 V.