Assignment 1
Assignment 1
Q2. What is depletion layer and junction potential in an unbiased p-n junction?
Q3. What is reverse breakdown? Explain the two breakdown mechanisms in a diode.
Q4. Write the diode equation and explain the significance of various terms.
Q5. Explain the V-I characteristics of diode. Explain the effect of temperature on a p-n junction. Define
forward static and dynamic resistance of a diode.
Q6. The current of germanium diode is 100 A at a voltage of -1V, at room temperature. Determine
the magnitude of current for the voltage of 0.2 V at room temperature.
Q7. A silicon diode has a reverse saturation current of 60nA. Calculate the voltage at which 1% of the
rated current will flow through the diode at room temperature if diode is rated for 1A.
Q8. For a silicon diode with reverse saturation current of 0.1 A, calculate the dynamic forward and
reverse resistance at a voltage of 0.62 and -0.62 V respectively , applied across the diode at room
o
temperature of 26 C.
Q9. Write in detail about the two types of capacitances associated with a diode. State its practical
significances.
Q10. What is rectifier? What are the important characteristics of a rectifier circuit? Explain why diode
can be used as a rectifier?
Q11. Define ripple factor and rectifier efficiency. What is the requirement of a rectifier in terms of
ripple factor? How it is achieved?
Q 12.. What is a Clipper and Clamper circuit? Draw any two type of circuit and explain its working.
Q 14. Explain how capacitor filter smoothen the dc waveform getting from fullwave rectifier.