Bahir Dar University

Bahir Dar Institute of Technology

Faculty of Electrical and Computer Engineering

Applied Electronics I
Laboratory Manual

Prepared by: Fasil Endalamaw

Nov, 2016
List of Experiments: Page no.

 Lab 1: Diode I-V Characteristics ……………………………………………...1

 Lab 2: Half-Wave and Full-Wave Rectification ………………………………..5

 Lab 3: Zener Diode Voltage Regulator ……….………………………………10

 Lab 4: Diode Logic Gates and Diode Clippers ………………………………..15

 Lab 5: I-V Characteristics of BJT Common-Emitter Configuration …………...20

 Lab 6: BJT Small Signal Amplifier …………………………………………...24

 Lab 7 Frequency Response of BJT Amplifier.…………………………….…..27

 Lab 8: Introduction to Multisim ………………………………………….…..31

 Lab 9: MOSFET I-V Characteristics …………………………………….……37

 Lab 10: Simulation of a BJT Amplifier Using Multisim Virtual Instruments….42

i
Preface

This laboratory manual, for the course Applied Electronics I, has been specifically prepared for
Electrical and Computer Engineering undergraduate students at Bahir Dar University. Every
possible effort has been made to cover all the topics discussed during lecture sessions.

This Lab Manual has ten experiments included in it. In the first four experiments
characteristics and applications of PN junction diodes is presented. In experiments 5 and 6, I-V
characteristics of bipolar junction transistors (BJTs) and their application as an amplifier will be
examined. On the seventh experiments, the students will study frequency response of a Common-
Emitter BJT amplifier. On the eighth and tenth experiments, the students will study how to
simulate electronic circuits using a circuit simulator called Multisim. On the ninth experiment, I-
V characteristics of n channel Metal Oxide Semiconductor Field Effect Transistors (NMOS) will
be discussed. In last experiment, the students will study how to use multisim virtual instruments
to simulate electronic circuits.

In order to cultivate a comprehensive approach to learning, each experiment begins with a set
of Objectives to be achieved, the equipment that will be required to conduct that experiment. This
is followed by the Theory/Background, that briefly elaborate the main features of the experiment.
Then after, there will be Procedures which illustrate the steps to follow so that the students can
successfully complete the specified experiments. At the end of each experiment, a set of Review
Questions are provided so that the students can remind themselves what they have acquired during
lab sessions and the student is expected to include answers to these questions in the laboratory
report.

After reading and testing each experiment, if you have uncertainties, comments and
suggestions you would like to give you can send me an email through the email address provided
below.

Fasil Endalamaw

[email protected]

ii
 Experiment 1

Diode I-V Characteristics

OBJECTIVE:

 To study methods of determining polarity of a diode.

 To understand the behaviour of a diode under forward and reverse bias conditions and be
able to plot its I-V characteristics curve.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. DC power supply 1
2. Digital Multi meter 1
3. Resistors R1=1KΩ 1
4. Diode 1
5. Connecting wires/Jumpers
6. Probes 2

THEORY:

Semiconductor Diode is a two terminal electronic device manufactured from a single PN junction.
A Diode has two polarities or terminals, Anode (P side of the junction) and Cathode (N side of the
junction). The circuit symbol for a diode is shown below.

Anode (A) Cathode (K)

P side N side

Fig.1.1: Diode Circuit Symbol

The amount of current that flows through the diode terminals depends on the polarity and amount of
bias voltage applied across the two terminals.
1

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
Hence there are two biasing modes: -

 Forward Biased Mode: - Occurs when a diode is connected in such a way that positive
terminal of the power supply is connected to the P side and negative terminal to N side of a
PN junction. In this mode, the diode conducts electrical current (ID) from P to N region,
with a forward voltage drop of approximately 0.7V for Si or 0.3V for Ge based diodes.

ID

P N
Type Type

VS

Fig.1.2: Forward Biased PN Junction Diode

 Reverse Biased Mode: - Occurs when a diode is connected in such a way that positive
terminal of the power supply is connected to the N side and negative terminal to P side of a
PN junction. The diode conducts a very small amount of electrical current from N to P
region, which is called reverse bias saturation current (IS). Most of the time this current is
in Nano ampere range.

IS

P N
Type Type

VS

Fig.1.3: Reverse Biased PN Junction Diode

In part I of this lab session, you will construct a forward and reverse biased simple diode circuits.
Based on the current readings and characteristics of a forward and reverse biased diode circuits you
will identify polarity of a diode used in the experiment. In Part II of this lab session, you will
construct a forward biased simple diode circuit. Based on the data value taken for Diode Voltage(VD)

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
and Diode Current(ID), you are expected to draw a characteristics curve for a forward biased diode,
which looks like the figure shown in Fig.1.4.

IDID

VD
VƔ

Fig.1.4: I-V Characteristics of a Forward Biased Diode

Procedures to follow:

Part 1:: Methods of Identifying Diode Polarity

1. Construct the circuit shown in Fig.1.5.

Fig.1.5: a Simple Diode Circuit

2. Record the voltage drop across R1.

3. Calculate the current that passes through the diode, which is VR1/R1.
4. Is it forward or reverse biased? Identify the polarity of the diode.
5. Reverse the diode polarity OR reverse terminals of the input DC power supply (VS).
6. Repeat steps 2-4.
Note: You can also identify polarity of a diode Physically. The terminal where there is a
band is the cathode terminal.
3

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
Part 2:: IV Characteristics of a Forward Biased Diode

1. Construct the circuit shown in Fig.1.6.

Fig.1.6: a Forward Biased Diode

2. By varying the input DC power supply (VS) value, record VR1.

3. Similarly, Calculate the current through the diode (ID=VR1/R1) and voltage drop across the
diode (VD=Vs-VR1). Put the results in the data table shown below.

VS (volt) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 5

VR1
(volt)
VD=VS-VR1
(volt)
ID=VR1/R1
(mA)

4. Plot ID against VD on a square paper in your report.

Review Questions
1. What other methods can be used to identify polarity of a diode, other than the methods you
have seen in this lab session?
2. Why do we connect a resistor in series with a diode?
3. Determine the Cut-in Voltage i.e. the approximate value of VD where the current ID begin
to rise noticeably? Is the diode manufactured from Silicon or Germanium?
4. Summarize the things you learnt in this lab session.

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 2

Half-Wave and Full-Wave Rectification

OBJECTIVE:

 To study half-wave and full-wave bridge rectification with and without a filtering capacitor.
 To examine the effect of a capacitor upon the rectified output waveform and its mean value.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. Function Generator 1
2. Digital Oscilloscope 1
3. Digital Multi meter 1
C1=22µF 1
4. Capacitor
C2=470µF 1
5. Diode 4
6. Resistor R=1KΩ 1
7. Connecting wires/Jumpers
8. Probes 6

THEORY:

Semiconductor diodes can be used for many applications. One application of diodes is in the design
of rectifier circuits. A diode rectifier forms the first stage of a dc power supply.

Voltage
Input Rectifier Filter Output
(AC) Regulator (DC)

Fig.2.1: DC Power Supply Block Diagram

Rectification is the process of converting an alternating (AC) voltage into one that is limited to one
polarity. It is a fundamental step in AC to DC conversion. The diode is useful for this function
5

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
because of its nonlinear characteristics, that is, current exists for one voltage polarity, but is
essentially zero for the opposite polarity. Rectification is classified as half-wave and full-wave, with
half-wave being the simpler and full-wave being more efficient.

Half-Wave Rectification

Fig.2.2: Half–Wave Rectifier Circuit

In half-wave rectification, either the positive or negative half of the input AC supply voltage is
allowed to reach at the output, while the other half is blocked. Hence it is called a half-wave rectifier.
If the Anode terminal is connected to positive terminal of the power supply and cathode terminal is
connected to the negative terminal of the power supply, only positive half-cycle of the input AC
supply voltage will appear across the output load, R. Hence the output voltage will appear across R
as frequently as the positive half-cycle of the input voltage repeats and have the same frequency as
the input voltage. If the diode in fig 2-2 is reversed, it will conduct during the negative portion of
the input signal.

But such a rectifier circuit suffers from a large ripple. In order to minimize this ripple a capacitor
is added in parallel with the load resistor, R.

Full-Wave Rectification
The large ripples available in the half-wave rectified ac voltage could be further reduced using full-
wave rectification. In this method, both the positive and negative half-cycles of the input will appear
at the output with the same polarity. A full-wave rectifier circuit shown below is called a Diode
Bridge rectifier circuit. In Fig.2.3, during the positive half cycle of the supply ‘A’ is more positive

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
than ‘B’. Diodes D1 and D2, therefore conduct while diodes D3 and D4 are reverse biased. During
the negative half cycle D3 and D4 conduct with the others reverse biased.

Fig.2.3: Diode Bridge Rectifier Circuit

Procedures to follow:

Part 1:: Half-Wave Rectification

1. Construct the circuit shown in Fig.2.4.

Fig.2.4: Half–Wave Rectifier Circuit

2. Turn on the function generator.

3. Set Vin to have Vpp=10V sinusoidal signal with frequency of 50Hz.
4. Connect channel 1 of the Oscilloscope to Vin and channel 2 to Vout.
[Adjust Voltage/Division=2V and Time/Division=10ms]
5. Observe and plot the input and output waveforms on the same axis.
6. Measure and label the period (T) and amplitude of the two waveforms to show the periods,
when the diode is conducting and those when it is not. Record the Mean or Average value
of the output signal as well. Compare period (T) of the input and output signals.
7. Add a capacitor with value of 22uF in parallel with the load resistor (R) to the circuit
diagram of Fig.2.4.
7

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 8. Plot the input and output waveforms on the same axis and record the new mean voltage. Is
the new mean value of the output signal greater or less than it was before?
9. Now replace the 22uF capacitor by a much larger value of 470uF. Is the ripple now less or
more than it was with the lower value capacitor? Is the new mean value of the output signal
greater or less than it was with the lower value capacitor?

Part 2:: Full-Wave Rectification

1. Construct the circuit shown in Fig.2.5.

Fig.2.5: Diode Bridge Rectifier Circuit

2. Turn on the function generator.

3. Set Vin to have Vpp=10V sinusoidal signal with frequency of 50Hz.
4. Connect channel 1 of the Oscilloscope to Vin and channel 2 to Vout.
[Adjust Voltage/Division=2V and Time/Division=10ms]
5. Plot the input and output waveforms on the same axis.
6. Measure and label the period (T) and amplitude of the two waveforms to show the periods,
when the diode is conducting and those when it is not. Record the Mean or Average value
of the output signal as well. Compare period (T) of the input and output signals.
7. Should the amplitude of the output signal be the same as it was for a half-wave rectifier?
Does your observation confirm your answer?
8. Add a capacitor with value of 22uF in parallel with the load resistor (R) to the circuit
diagram of Fig.2.5.
9. Plot the input and output waveforms on the same axis and record the new mean voltage. Is
the new mean value of the output signal greater or less than it was before?

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 10. Now replace the 22uF capacitor by a much larger value of 470uF. Is the ripple now less or
more than it was with the lower value capacitor? Is the new mean value of the output signal
greater or less than it was with the lower value capacitor?

Review Questions
1. Why will the amplitude of the output waveform not be exactly equal to the amplitude of the
input voltage? How much will it differ?
2. The mean voltage you obtain is positive. How could you obtain a negative mean voltage?
3. Describe briefly the effect of the capacitor on the ripple and mean value. How do you relate
the value of the capacitor to the amount of ripple?
4. List other methods that help us to reduce the ripple.
5. Summarize the things you learnt in this lab session.

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 3

Zener Diode Voltage Regulator

OBJECTIVE:

 To determine the constant voltage characteristics of reverse biased Zener diodes.

 To investigate the use of a Zener diode in a simple voltage regulator circuit.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. DC power supply 1
2. Digital Multi meter 1
R1=100Ω 1
3. Resistors
R2=100Ω 1
4. Potentiometer Max=10kΩ 1
5. Zener Diode Vz=3.3V 1
6. Connecting wires/Jumpers
7. Probes 4

THEORY:

The Zener diode is like a general-purpose diode consisting of a Silicon or Germanium PN junction.
When biased in the forward direction it behaves just like a normal diode passing the rated current,
but as soon as a reverse voltage applied across the Zener diode exceeds the rated voltage of the
device, the diodes breakdown voltage is reached. The current now flowing through the Zener diode
increases dramatically to the maximum circuit value (which is usually limited by a series resistor)
and once achieved, this reverse saturation current remains fairly constant over a wide range of
applied voltages. The voltage value at which the voltage across the Zener diode becomes stable is
called Zener diode breakdown voltage, (Vz). For Zener diodes, this voltage can range from less than
one volt to hundreds of volts. As shown in Fig.3.2, this Zener breakdown voltage on the I-V curve
is almost a vertical straight line. The Zener Diode is used in its reverse breakdown mode, i.e. the
Anode terminal connects to the negative terminal of the supply voltage and Cathode terminal
connects to positive terminal of the supply voltage.
10

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Anode (A) Cathode (K)
[ P side] [ N side]

Fig.3.1: Zener Diode Circuit Symbol

IZ

VZ (breakdown voltage)
VZ
IZ(min) VƔ

IZ(max)

Fig.3.2: Zener Diode I-V Characteristics

The Zener Diode Voltage Regulator

From the I-V characteristics curve, we can see that the Zener diode has a region in its reverse bias
characteristics of almost a constant negative voltage regardless of the value of the current flowing
through the diode and remains nearly constant even with large changes in current as long as the
Zener diodes current remains between the breakdown current IZ(min) and the maximum current
rating IZ(max). This ability to control itself can be used to great effect to regulate or stabilise a
voltage source against supply or load variations. The fact that the voltage across the diode in the
breakdown region is almost constant turns out to be an important application of the Zener diode as
a voltage regulator.

The function of a voltage regulator is to provide a constant output voltage to a load connected
in parallel with it in spite of the ripples in the supply voltage or the variation in the load and the
Zener diode will continue to regulate the voltage until the diodes current falls below the minimum
11

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
IZ(min) value in the reverse breakdown region. Since an output of a rectifier circuit contains ripple
superimposed onto the DC voltage, by connecting a simple Zener voltage Regulator circuit as shown
below across the output of the rectifier, a more stable output voltage can be produced. The resistor,
RS is connected in series with the Zener diode to limit the current flow through the Zener diode.

Fig.3.3: Zener Diode Voltage Regulator

Procedures to follow:

Part 1: Zener Diode Voltage Regulator with Variable Supply and Fixed Load

1. Construct the circuit shown in Fig.3.4.

Fig.3.4: Zener Diode Voltage Regulator with Variable Supply and Fixed Load

2. By varying the DC input supply voltage (Vs) value, record the corresponding VR1 and Vout.
3. Similarly, Calculate the current that passes through the load (IL= Vout/R2), the current that
passes through the source resistance (IS = VR1/R1), the current that passes through the zener
diode (IZ = IS - IL) and the power dissipation across the Zener diode (PZ =VZ IZ). Put the
results in the data table shown below.
12

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 VS VR1 Vout = VZ IS = VR1/R1 IL = Vout/R2 IZ = IS - I L PZ = VZ IZ
(volt) (volt) (volt) (volt) (volt) (volt) (volt)
1
2
3
4
5
6
7
8
9
10
11
12
15
20

4. Plot IZ against VZ on a square paper in your report.

Part 2: Zener Diode Voltage Regulator with Variable Load and Fixed Supply

1. Construct the circuit shown in Fig.3.5.

Fig.3.5: Zener Diode Voltage Regulator with Variable Load and Fixed Supply
13

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 2. Turn on the DC input supply voltage (Vs) and adjust it to 15V. [ Don’t change this value
until the end of this experiment.]
3. Set the Potentiometer to Minimum and measure the Output Voltage (Vout).
4. Set the Potentiometer to Maximum and measure the Output Voltage (Vout).
5. Compare Vout when the potentiometer is at its Maximum and Minimum values. Is there
any variation in Vout value?

Review Questions
1. Does the breakdown voltage obtained from the graph agree with its nominal value? If not,
can you suggest a reason for the difference?
2. For both part 1 and part 2, describe the performance of the voltage regulator circuit for the
given supply voltage and load variation respectively. Is the Zener diode doing its job well?
3. Summarize the things you learnt in this lab session.

14

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 4

Diode Logic Gates and Diode Clippers

OBJECTIVE:

 To implement digital logic operations using Diodes.

 To investigate the application of Diodes and Zener diodes in clipping alternating signals.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. DC power supply 1
2. Function Generator 1
3. Digital Oscilloscope 1
4. Digital Multi meter 1
5. Resistors R=1KΩ 1
6. Zener Diode Vz=3.3V 2
7. Diode 2
8. Connecting wires/Jumpers
9. Probes 8

THEORY:

Diode Logic Gates

A Digital Logic Gate is an electronic device that makes logical decisions based on the different
combinations of digital signals present on its inputs. It is the basic building block from which all
digital electronic circuits and microprocessor based systems are constructed from. Basic digital logic
gates perform logical operations of AND, OR and NOT on binary numbers.

In digital logic design only two voltage levels or states are allowed and these states are generally
referred to as Logic 1 and Logic 0, High and Low, or True and False. These two states are represented
in Boolean algebra and standard truth tables by the binary digits of 1 and 0 respectively. Most digital
logic gates and digital logic systems use positive logic, in which a logic level 0 or Low is represented

15

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
by a zero voltage, 0V or ground and a logic level 1 or High is represented by a higher voltage such
as +5V, with the switching from one voltage level to the other, from either a logic level 0 to a 1 or a
1 to a 0 being made as quickly as possible to prevent any faulty operation of the logic circuit.

Diodes together with resistors can be used to implement digital logic functions. The Figures
below show two diode logic gates. To see how these circuits function, consider a positive logic
system in which voltage values close to 0V correspond to logic 0 (or Low) and voltage values close
to +5V correspond to logic 1 (or High).

 OR Gate: - The output of this gate will be High (1) if any of the inputs are High (1). The
output of an OR gate becomes Low (0) if and only if all inputs are Low (0).

A B Output

0 0 0
A 0 1 1
Output
B 1 0 1
1 1 1

Fig.4.1: a Two-Input OR Gate Circuit Symbol and Its Truth Table

 AND Gate: - The output of this gate will be High (1) if and only if all inputs are High (1).
If any input(s) are Low (0), the output is guaranteed to be in a Low state.

A B Output

0 0 0
A
Output 0 1 0
B
1 0 0
1 1 1

Fig.4.2: a Two-Input AND Gate Circuit Symbol and Its Truth Table

16

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Fig.4.3: (a) a Two-Input Diode OR Logic Circuit (b) a Two-Input Diode AND Logic Circuit

Diode Clipper
The Diode Clipper, also known as a Diode Limiter, is a wave shaping circuit that takes an input
waveform and clips or cuts off its top half, bottom half or both halves together to produce an output
waveform that resembles a flattened version of the input. Diode Clipping Circuits can be used in
a variety of applications to modify an input waveform or to provide over-voltage protection to
ensure that the output voltage never exceeds a certain level protecting the circuit from high voltage
spikes. Thus diode clipping circuits can be used in voltage limiting applications. A Clipper that
works on both the positive and negative peaks of an input waveform is called Double Clipper.
There are so many diode configurations that can do clipping. In this lab session we will consider
two configurations, using a normal Diode and Zener Diode.

A. Diode Double Clipper

Fig.4.4: Diode Double Clipper

Upper limit = VƔ1 where VƔ1 is Cut-in voltage for Diode 1

Lower limit = VƔ2 where VƔ2 is Cut-in voltage for Diode 2
17

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
B. Zener Diode Double Clipper

Fig.4.5: Zener Diode Double Clipper

Upper limit = VƔ1+VZ2 where VƔ1 is Cut-in voltage for Zener Diode 1 and
VZ2 is breakdown voltage for Zener Diode 2
Lower limit = VƔ2+VZ1 where VƔ2 is Cut-in voltage for Zener Diode 2 and
VZ1 is breakdown voltage for Zener Diode 1

Procedures to follow:

Part 1:: Diode Logic Gates

1. Construct the OR diode logic circuit shown in Fig.4.3 (a).

2. Measure the Output voltage (VO) for the input combinations shown below. Put the results
in the data table shown below.

V1 V2
VO
(DC) (DC)

0V 0V

5V 0V

0V 5V

5V 5V

18

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 3. Construct the AND diode logic circuit shown in Fig.4.3 (b).
4. Measure the Output voltage (VO) for the input combinations shown below. Put the results
in the data table shown below.

V1 V2
VO
(DC) (DC)

0V 0V

5V 0V

0V 5V

5V 5V

Part 2:: Diode Clipper

1. Construct the circuit shown in Fig.4.4.

2. Turn on the function generator.
3. Connect channel 1 of the Oscilloscope to the Ac input supply voltage(VS) and channel 2 to
the output(Vout). [Adjust Voltage/Division=2v and Time/Division=10ms]
4. Now apply a 0Vpp sinusoidal input signal (VS) with frequency of 50Hz. Slightly increase
the Ac input supply voltage(VS) value until you see clipping on the output signal.
5. Observe and plot the input and output waveforms on the same axis.
6. Repeat steps 1-5 for Fig.4.5 as well.

Review Questions
1. In part 1, what would have been the value of the output voltage had you used ideal diodes?
2. In part 2, what is the difference between the output waveforms of both figures?
3. In part 2, what would happen to the output waveforms, if the direction of the diodes in both
figures is reversed?
4. Summarize the things you learnt in this lab session.

19

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 5

I-V Characteristics of BJT Common-Emitter Configuration

OBJECTIVE:

 To study I-V characteristics of a Common-Emitter configuration.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. DC power supply 1
2. Digital Multi meter 1
R1=1KΩ 1
3. Resistors
R2=220kΩ 1
4. Potentiometer Max=10kΩ 1
5. Transistor BC107/108 1
6. Connecting wires/Jumpers
7. Probes 4

THEORY:

The Bipolar Junction Transistor (BJT) is a three terminal semiconductor device containing two PN
junctions, i.e. when either a thin P or N type semiconductor is inserted in between N or P regions.
Bipolar Junction Transistors can be NPN or PNP as shown below. Therefore, it has three separately
doped regions which are called Emitter, Base, and Collector. The basic transistor principle is that
the voltage between two terminals controls the current through the third terminal.

Fig.5.1: NPN and PNP Simplified Block Diagram and Circuit Symbols
20

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
A single PN junction has two modes of operation, forward bias and reverse bias. The bipolar
transistor, with two PN junctions, therefore has four possible modes of operation, depending on the
bias condition of each PN junction, which is one reason for the versatility of the device. For example,
if the transistor is used as an amplifying device, the Base–Emitter (B–E) junction is forward biased
and the Base–Collector (B–C) junction is reverse biased, in a configuration called the forward-active
operating mode, or simply the active region. In order to implement the forward active mode, a BJT
circuit can be configured in three different modes, which are Common-Base, Common-Collector,
and Common-Emitter. Fig.5.2 shows one of the three possible ways to configure a transistor called
Common-Emitter configuration.

Fig.5.2: NPN Transistor in Common-Emitter Configuration

In this configuration, the Emitter is common to the input and output terminals. In this circuit, VBB
forward biases the B–E junction and controls the base current (IB). The C–E voltage can be varied
by changing VCC. The base current (IB) is derived from input signal and the collector current (IC) is
used to generate an output. The ratio between IB and IC represents the current gain of the transistor
(β). In this lab session we are going to draw input I-V characteristics (IB Vs VBE) and output I-V
characteristics (IC Vs VCE for different values of IB) for a Common-Emitter configuration.
 The Input I-V Characteristics (IB Vs VBE): - is similar to what we have seen in diode
characteristics. When B-E junction is forward biased i.e. VBB ≥ VBE (on), the B-E junction
will act as a diode.
 The Output I-V Characteristics (IC Vs VCE for different values of IB):- In NPN, in order
for the transistor to be biased in the forward-active mode, the B–C junction must be zero or
reverse biased, which means that VCE must be greater than approximately VBE (on). If,
however, VCE < VBE (on), the B–C junction becomes forward biased, the transistor is no
longer in the forward-active mode, and the collector current very quickly drops to zero.
21

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 IB

Forward-Bias
Region

VBE
VBE (on)

Fig.5.3: Common-Emitter Input I-V Characteristics

Forward Active Mode

IC
IB4

IB3

IB2

IB1

VCE

Fig.5.4: Common-Emitter Output I-V Characteristics

Procedures to follow:

1. Construct the circuit shown in Fig.5.5.

Fig.5.5: Common-Emitter Circuit

22

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 2. By varying VCC, set the Collector – Emitter voltage (VCE) to 0.5V
3. Use the potentiometer to adjust the Base Current (IB) to 0A.
4. Record the Base – Emitter voltage (VBE) and the Collector Current (IC).
5. For each corresponding IB and VCE values shown in the data table below, by repeating steps
2-4, record VBE and IC.

IC (mA) for VCE:

IB VBE
(µA)
0.3V 0.5V 0.7V 1V 2V 5V 10V

10

20

30

40

5. Plot IB against VBE on a square paper in your report.

6. Plot IC against VCE for each value of IB on a square paper in your report.

Review Questions
1. At what approximate value of VBE does the B-E junction become forward biased?
2. What would happen to the IC value, when VCE becomes less than VBE (on)? What is the
significance of this value?
3. What do you notice about the effect of VCE on IC, when VCE becomes greater than about
1.0V?
4. Summarize the things you learnt in this lab session.

23

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 6

BJT Small Signal Amplifier

OBJECTIVE:

 To understand AC voltage and current amplification in the Bipolar Junction Transistors.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. Function Generator 1
2. Digital Oscilloscope 1
3. Digital Multi meter 1
4. Transistor BC107/108 1
5. Potentiometer Max=10KΩ 1
R1=10KΩ 1
6. Resistors R2=220KΩ 1
R3=1KΩ 1
C1=1µF 1
7. Capacitors
C2=1µF 1
8. Connecting wires/Jumpers
9. Probes 6

THEORY:

An Amplifier is an electronic circuit that is used to raise the strength of a weak signal. The process
of raising the strength of a weak signal is known as amplification. The transistor is used for
amplification. When a transistor is used as an amplifier, the first step is to choose a proper
configuration in which device is to be used. Then the transistor is biased to get the desired Q-point.
The signal is applied to the amplifier input and gain is achieved. The purpose of biasing is to
establish a Q-point about which variations in current and voltage can occur in response to an AC
input signal. An AC signal, shown in Fig.6.1 (a) below, changes polarity every half cycle. So it is
necessary to supply the transistor with a dc bias signal so that it amplifies over the entire cycle.
The term small signal refers to the use of signals that take up a relatively small percentage of an
24

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
amplifier’s operational range. Those amplifiers designed to handle these small AC signals are
called Small Signal Amplifiers.

Fig.6.1 (b) shows an amplifier where capacitor C1 couples the sinusoidal AC source to base of
the transistor. The capacitor C2 couples the output to an external load. These coupling capacitors
block DC and thus prevent the source and load resistances from changing the DC bias voltages at
the base and collector terminals. C1 and C2 act as short circuits to signal voltage. The input signal
voltage Vin causes the base voltage to vary sinusoidally above and below its DC bias level. The
resulting variation in base current produces a larger variation in collector current. As the collector
current increases, the collector voltage decreases. The varying collector current will cause the
voltage to be opposite in polarity to the input signal. The output is taken from the capacitor.

Amplifier Characteristics: -

 Voltage Gain: can be determined by measuring the peak to peak collector–emitter and
base-emitter voltage and taking the ratio of the two.
Voltage Gain = (Collector – Emitter Voltage) / (Base – Emitter Voltage) = VCE/VBE
 Current Gain: can be determined by measuring the peak to peak collector and base current
and taking the ratio of the two.
Current Gain = Collector Current / Base Current = IC/IB
 Input Impedance: can be determined by taking the ratio of the peak to peak base emitter
voltage and peak to peak base current.
Input Impedance = (Base – Emitter Voltage) / (Base Current) = VBE/IB

Fig.6.1: (a) Sinusoidal AC Signal (b) Small Signal Amplifier

25

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
Procedures to follow:

1. Construct the circuit shown in Fig.6.1 (b) on the circuit board.

2. Turn on the function generator.
3. Disconnect the input AC signal and vary the base bias potentiometer until you get a DC
Collector-Emitter voltage (VCE) of 7.5V (approximately half of the supply voltage).
4. Connect channel 1 of the Oscilloscope to Vin and channel 2 to Vout.
[Adjust Voltage/Division = 2V and Time/Division = 10ms]
5. Now apply a 0Vpp sinusoidal input signal (Vin) with frequency of 50Hz. Slightly increase
Vin value until you read an output of 8Vpp on the Oscilloscope. The output signal should be
sinusoidal.
6. Observe and plot the input and output waveforms on the same axis. Label the amplitudes as
well. Determine the voltage gain.
7. Determine the current gain of the amplifier circuit.
8. Determine the input impedance of the amplifier using the equation given above.

Review Questions
1. What is the reason for setting the quiescent point of the transistor at approximately half of
the biasing voltage?
2. If the output signal becomes flat at the top or bottom of the sine wave, what might be the
problem?
3. Summarize the things you learnt in this lab session.

26

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 7

Frequency Response of BJT Amplifier

OBJECTIVE:

 To plot the frequency response of a BJT amplifier and determine the voltage gain, lower
cut off frequency, upper cut off frequency, bandwidth of the amplifier.
 Investigate the effect of input signal frequency change on the voltage gain and frequency
response of a BJT amplifier.

EQUIPMENT AND COMPONENTS REQUIRED:

EQUIPMENT or COMPONENT TYPE QUANTITY

1. Function Generator 1
2. Digital Oscilloscope 1
3. Digital Multi meter 1
4. Transistor BC107/108 1
5. Potentiometer Max=10KΩ 1
R1=10KΩ 1
R2=220KΩ 1
6. Resistors
RL=1KΩ 1
RF=470Ω 1
C1=1µF 1
7. Capacitors C2=1µF 1
C3=1µF 1
8. Connecting wires/Jumpers
9. Probes 6

THEORY:

Amplifiers are designed to be used over a range of frequencies. If the loudspeakers are to reproduce
the sound faithfully, the amplifier used must amplify all the frequency components of signal by
same amount. If it does not do so, the output of the loudspeaker will not be the exact replica of the
original sound. The voltage gain of an amplifier varies with signal frequency because reactances
27

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
of the capacitors in the circuit changes with signal frequency and hence affects the output voltage.
The curve between voltage gain and signal frequency of an amplifier is known a frequency
response. In general, an amplifier gain versus frequency will resemble that shown in Fig.7.1. Three
frequency ranges, low, midband, and high, are indicated. The frequency response of an amplifier
is limited in the low and high frequency bands because of the presence of capacitors.

 Midband Range [fL ≤ f ≥ fH]: - In this frequency range, coupling and bypass capacitors act
as short circuits, and internal transistor capacitances act as open circuits. In this region, the
gain is almost constant and this gain is called midband gain (AV (max)). The gain at f = fL
and at f = fH is 3dB less than the maximum midband gain. The bandwidth of the amplifier is
defined as fBW = fH − fL.
 Low-Frequency Range [f < fL]: - In this frequency range, the gain decreases as the
frequency decreases because of coupling and bypass capacitor effects. The internal transistor
capacitances are treated as open circuits.
 High-Frequency Range [f > fH]: - In this frequency range, the gain decreases as the
frequency increases because of internal transistor capacitance effects. In this region, coupling
and bypass capacitors are treated as short circuits.

Gain

Av

0.707Av

Frequency
fL fH

Fig.7.1: Frequency Response of an Amplifier

28

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
The frequencies at which the gain reduces to 70.7% of the maximum gain are known as upper cut
off frequency (fH) and lower cut off frequency (fL).

Procedures to follow:

1. Construct the circuit shown in Fig.7.2 on the circuit board.

Fig.7.2: Common-Emitter BJT Amplifier

2. Turn on the function generator.

3. Disconnect the input AC signal and vary the base bias potentiometer until you get a DC
Collector-Emitter voltage (VCE) of 7.5V (approximately half of the supply voltage).
4. Connect channel 1 of the Oscilloscope to Vin and channel 2 to Vout.
[Adjust Voltage/Division = 2V and Time/Division = 10ms]
5. Now apply a 0Vpp sinusoidal input signal (Vin) with frequency of 20Hz. Slightly increase
Vin value until you read an output of 8Vpp on the Oscilloscope. The output signal should be
sinusoidal.
6. Keeping the input voltage constant vary the input signal frequency (f) and record the Input
Voltage[Vin(rms)], Output Voltage[Vout(rms)], Voltage Gain[Av=Vout(rms) / Vin(rms)],
Voltage Gain in dB[Av(dB) = 20log10(Av)] of the amplifier.

29

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 f Vin Vout Av = [Vout(rms)/Vin(rms)] Av(dB)=20log10(Av)
(Hz) (rms) (rms)
20
50
75
100
200
500
1k
10k
20k
50k
100k
200k
500k
1M
10M
100M

7. Plot output voltage against input frequency on a square paper in your report.
8. From the plot, determine the values of mid-band voltage gain, Lower cut-off frequency,
Upper cut-off frequency, and Bandwidth of the amplifier.

Review Questions
1. What is the reason for setting the quiescent point of the transistor at approximately half of
the biasing voltage?
2. If the output signal becomes flat at the top or bottom of the sine wave, what might be the
problem?
3. Summarize the things you learnt in this lab session.
30

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 Experiment 8

Introduction to Multisim

OBJECTIVE:

 To study basics about a circuit simulator called Multisim.

EQUIPMENT AND COMPONENTS REQUIRED:

 Circuit Simulator (Multisim)

THEORY:

Multisim is a general purpose Analog circuit simulator that is used to verify circuit designs and to
predict the circuit behaviour. Multisim has Analog and Digital libraries of standard components
(such as NAND, NOR, flip-flops, and other digital gates, op amps, etc.) which makes it a useful
tool for a wide range of Analog and Digital applications. Multisim’s user interface consists of the
following basic elements:

31

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
 No. Name Description
1 Menu Bar is where you find commands for all functions.
2 Design Toolbox is where you navigate through the different types of files in a
project (schematics, PCBs, reports), view a schematic’s hierarchy
and show or hide different layers.
3 Component toolbar Contains buttons that you use to select components from the
Multisim databases for placement in your schematic.
4 Standard toolbar Contains buttons for commonly-performed functions such as Save,
Print, Cut, and Paste.
5 View toolbar Contains buttons for modifying the way the screen is displayed.
6 Simulation toolbar Contains buttons for starting, stopping, and other simulation
functions.
7 Main toolbar Contains buttons for common Multisim functions.
8 In Use List Contains a list of all components used in the design.
9 Instruments Contains buttons for each instrument.
toolbar
10 Scroll Left/Right
11 Circuit Window is where you build your circuit designs.
(or workspace)
12 Spreadsheet View Allows fast advanced viewing and editing of parameters including
component details such as footprints, RefDes, attributes and design
constraints.
13 Active Tab

Schematic Capture
Schematic capture is the first stage in developing your circuit. This is where you choose the
components you want to use, place them on the circuit window in the desired position and
orientation, wire them together, and otherwise prepare your design. You can modify component
properties, orient your circuit on a grid, add text and a title block, add sub circuits and buses, and
control the colour of the circuit window background, components and wires. The first step in
schematic capture is to place the appropriate components on your circuit window. You typically
do this via the component browser (that is, the Select a Component dialog box). You can also
select Place  Component to display the Select a Component dialog box. Refer to the figure
below.

32

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
Each button on the Components toolbar corresponds to a group of components with similar
functionality. Click one of these buttons to open the component browser and select the desired
component. Components are organized by database, group, and family (for example, Master
Database, Sources Group, Power Sources Family). Type-ahead allows you to type a few characters
to jump to the component you are looking for. Search capabilities allow you to find components
using generalized wildcard searches throughout all the databases. Each time you place a
component, it is added to the In Use List. To place another instance of any currently placed
component, select it from the list and click to place it in the desired location. After you have placed
a component, you can rotate or flip it to the desired orientation.

Wiring Components
To create a basic wire, click on any one of a placed component's symbol pins and click on a pin
on another component to complete the connection. You can also double-click anywhere in a circuit
to start a wire. This creates a junction at that location and starts wiring from that point. You have
the option to make an automatic connection if a component pin is touching a wire, another pin or
a junction. After you have placed a wire, you can change its path by clicking on it and dragging
any of the selection handles that appear.

33

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
Wires can easily be disconnected from one location and moved to another. You may also change
the colour of part or all of a wire.

Labelling
There are many ways that you can label your designs in Multisim:
 Adding a Title Block: - Title blocks can include elements such as text, lines, arcs, Bezier
curves, rectangles, ovals, arcs, and bitmaps.
 Adding Miscellaneous Text: - You can use the Place  Text command to place text
anywhere on the workspace.
 Adding a Comment
 Using Graphic Annotation: - Use this functionality to add the following graphic elements
to your workspace: - Text, Line, Multiline, Rectangle, Ellipse, Arc, Polygon, Picture,
Comment.
 Modifying Net Names: - Multisim automatically assigns a net name to each node in the
circuit. If desired, you can modify a net name to something more meaningful to the circuit
design. For example, you may wish to change a net name to “Output.” If you are planning to
modify net names for certain “global” reserved nets such as VCC and GND, there are some
cautions that apply.

Simulation in Multisim
Simulation is a mathematical way of emulating the behaviour of a circuit. With simulation, you
can determine much of a circuit's performance prior to physically constructing the circuit or using
physical test instruments. There are several sections in the Multisim software that are closely tied
to the simulation process: setting up the circuit to be simulated, setting up the simulation
parameters, performing the simulation, and analyzing the results.

Instruments
Multisim includes a number of virtual instruments that you can use to measure the behaviour of
your circuits. These instruments are set, used and read just like their real-world equivalents.
Depending on your edition of Multisim, you will have some or all of the following instruments:

34

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering
  Multimeter  Logic Analyzer  Voltmeter

 Wattmeter  Logic Converter  Ammeter

 Spectrum Analyzer  Function Generator  Current Probe

 Frequency Counter  Measurement Probe  Function Generator

 Distortion Analyzer  Network Analyzer  Four Channel

 Word Generator  IV Analyzer Oscilloscope

Data Analysis

Multisim offers you many analyses, all of which use simulation to generate the data for the analysis
you want to perform. When you activate an analysis, the results are displayed on a plot in the
Multisim Grapher. The Grapher is a multi-purpose display tool where you can view, adjust, save,
and export graphs and tables. It displays the results of all Multisim analyses in graphs and tables.
It also displays a graph of traces for some instruments (for example, the Oscilloscope and Bode
Plotter). The most commonly used types of analysis which can be done with Multisim include: -
DC Operating Point Analysis, AC analysis, Transient analysis, DC Sweep analysis, Noise and
Fourier analysis. Note: You cannot do any simulation on the circuit if you don't have a ground.

Procedures to follow:

Part 1: DC Circuit

1. Construct the circuit shown in Fig.7.1.

Fig.7.1: A DC Circuit with Two Voltage Sources

35

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

 2. Use any of the DC circuit analysis techniques to find the current and the voltage drops at
each circuit elements. [Do the analysis using hand calculations.]
3. Go to Simulate  Instruments  Preset Measurement Probes  From Dynamic Probe
Settings and Put it where you would like to take measurements.
4. Run the simulation. Record values of voltage and current at each circuit elements.
5. Compare these values with the results you already determined at procedure 2.

Part 2:: High Pass Filter Circuit

1. Construct the RC Circuit shown in Fig.7.2.

Fig.7.2: A High Pass Filter

2. Use AC analysis to investigate the behaviour of the circuit.

3. Observe and plot the output(Vout) against frequency and compare it with the expected one.

Review Questions

1. Explain the difference between the Analysis you have done in part 1 and 2.
2. Compare the experimental results you got in part 1 and 2 with the result you determined
using hand calculations. If there is deviation in between the two, what do you think is the
cause?
3. Summarize the things you learnt in this lab session.

36

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

 Experiment 9

MOSFET I-V Characteristics

OBJECTIVE:

 To investigate I-V characteristics of a MOSFET.

EQUIPMENT AND COMPONENTS REQUIRED:

 Multisim

THEORY:

A Field Effect Transistor (FET) operates as a conducting semiconductor channel with two ohmic
contacts: - the Source and the Drain, where the number of charge carriers in the channel is
controlled by a third contact, the Gate. The most popular amongst the FETs are the MOSFETs
(Metal-Oxide Semiconductor Field Effect Transistors). There are two major types of MOSFETs,
called the Enhancement type and Depletion type. Each of these types can be manufactured with a
so called n channel or p channel: - Depletion and Enhancement Type.

Enhancement-Mode N-Channel MOSFET (NMOS)

The physical structure of n-Channel Enhancement-Type MOSFET (NMOS) is shown in Fig.8.2.

The device is fabricated on a p-type Body (or Substrate). Two heavily doped n-type regions
(Source and Drain) are created in the Substrate. A thin (fraction of micron) layer of SiO2, which
is an excellent electrical insulator, is deposited between Source and Drain region. Metal is
deposited on the insulator to form the Gate of the device (thus, Metal-Oxide Semiconductor).
Metal contacts are also made to the Source, Drain, and Body region to make contact with the
external world. Enhancement-mode n-channel MOSFET (NMOS) has no structural channel. For
an n-channel MOSFET, a positive gate voltage (VGS) above a threshold value induces a channel
by creating a thin layer of negative charges in the substrate region adjacent to the SiO2 layer. The
conductivity of the channel is enhanced by increasing the gate-to-source voltage and thus pulling

37

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

more electrons into the channel area. For any gate voltage below the threshold value, there is no
channel. The circuit symbols for the n-channel and p-channel Enhancement MOSFETs are shown
in Fig.8.1. The broken lines symbolize the absence of a physical channel. An inward pointing
substrate arrow is for n-channel, and an outward-pointing arrow is for p-channel.

Fig.8.1: n-channel and p-channel Enhancement-mode MOSFET Circuit Symbols

NMOS (n-channel MOSFET) Gate (G)

Source (S) Drain (D)
Oxide (SiO2)

n+ n+

P-type substrate

Body (B)

Fig.8.2: NMOS (n-channel MOSFET)

Modes of Operation

MOSFET device operates in three distinct modes of operation depending on the applied Gate to
Source voltage (VGS), Drain to Source voltage (VDS) while Source and Body terminals being
grounded. In a typical MOS device the Gate current is zero and the current that flows from the
Drain end to the Source end is determined by considering the following three regions of operation:

 Cut-Off Region: - When VGS < Vtn , no channel is induced (no inversion layer is created),
and so IDS = 0. Hence the NMOS is said to be in Cut-off mode.

38

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

 Linear/Triode Region: - When an induced channel is present (i.e. VGS > Vtn), but the
value of VDS is not large enough to pinch-off this channel (i.e. VDS < VGS - Vtn), the NMOS
is said to be in Triode mode. Hence
IDS = K n [ (VGS – Vtn ) VDS – (VDS2 / 2 )] Where: K n = (W/L) µn Cox
 In this region of operation, IDS depends on the values of VDS and VGS.
 Saturation Region: - When an induced channel is present (i.e. VGS > Vtn), and the value of
VDS is large enough to pinch off this channel (i.e. VDS ≥ VGS –Vtn), the NMOS is said to be in
Saturation mode. Substituting VDS = VGS – Vtn in to the above general equation results in:
IDS = K n [(VGS – Vtn) 2] /2

Procedures to follow:

Part 1: MOSFET biasing

1. Construct the circuit shown in Fig.8.3.

Fig.8.3: Voltage Divider biasing

2. Go to Simulate  Instruments  Preset Measurement Probes  From Dynamic Probe

Settings and Put it where you would like to take measurements.
3. Run the simulation and record the value of VGS, VDS and IDS. Record the gate current as well.
4. Compare this value with the calculated values of VGS, VDS and IDS. You can find the
parameter values required for your calculation by Double clicking on the NMOS and then
clicking Edit Model.

39

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

Part 2:

1. Construct the circuit shown in Fig.8.4.

Fig.8.4: Circuit Diagram of NMOS

2. Go to Simulate  Instruments  Preset Measurement Probes  From Dynamic Probe

Settings and Put it where you would like to take measurements.
3. Run the simulation and record the value of VGS, VDS and IDS. Record the gate current as well.
4. Compare this value with the calculated values of VGS, VDS and IDS. You can find the
parameter values required for your calculation by Double clicking on the NMOS and then
clicking Edit Model.
5. Now in your schematic window do the following: Double click on the NMOS  Click Edit
Model. In the separate window delete whatever is there and paste the following:
M1 1 2 3 3 MOST1
.MODEL MOST1 NMOS(Level=3 Kp=30u W=6m L=1u Vto=1.5)

Then click Change Part Model and exit it.

6. Once again run your simulation and record the new IDS. Calculate IDS and compare it with
the recorded value.
7. Change VGS to 13V. In which region is the NMOS working? How much is IDS for this case?

40

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

Part 3::NMOS I-V Characteristics

1. Construct the circuit shown in Fig.8.5.

Fig.8.5: Circuit Diagram of NMOS with VGS=15V and VDS=15V

2. Make the type of Analysis DC Sweep.

3. Set the primary parameter of the DC Sweep analysis to V1 or VDS (Start value=0, Stop
value=8, Increment=0.01) and the secondary parameter to V2 or VGS(Start value=0, Stop
value=5, Increment=1). Set the output to be -I(V1) or - I DS
4. Observe and plot of IDS against VDS for different values of VGS on a square paper in your
report. Can you suggest a possible value for Vtn by just looking at the plot?

Review Questions

1. Does the IDS (recorded) and IDS (calculated) values match? If not, what possible reason can
you suggest?
2. What is the difference between AC Analysis and DC Sweep Analysis?
3. In pat 3, Can you suggest a possible value for Vtn by just looking at the plot?
4. Summarize the things you learnt in this lab session.

41

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

 Experiment 10

Simulation of a BJT Amplifier Using Multisim Virtual

Instruments

OBJECTIVE:

 To simulate a BJT Amplifier by using Multisim Virtual Instruments and investigate its

characteristics.

EQUIPMENT AND COMPONENTS REQUIRED:

 Multisim

THEORY:

Multisim provides a number of virtual instruments. These instruments are used to measure the
behaviour of electrical circuits. They are set, used and read just like their real-world equivalents.
They look and feel just like the instruments you’ve seen and used in a lab. Virtual instruments are
one of the best and easiest ways of examining your circuit’s behaviour by displaying the results of
simulation. The instrument toolbar is displayed by default on the right menu bar and are indicated
by the following icons. If your instrument toolbar is not displayed, click the View  Toolbars 
Instrument Toolbar menu item.

Fig.10.1: Instruments Toolbar

42

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

Multimeter
Use the multimeter to measure AC or DC voltage or current, and resistance or decibel loss between
two nodes in a circuit. To use the instrument, click on the Multimeter button in the Instruments
toolbar and click to place its icon on the workspace. The icon is used to wire the Multimeter to the
circuit. Double-click on the icon to open the instrument face, which is used to enter settings and
view measurements.

XMM1

Positive Negative
Terminal Terminal

Fig.10.2: (a) Multimeter Icon (b) Multimeter Menu

Function Generator
The function generator is a voltage source that supplies sine, triangular or square waves. The
function generator has three terminals through which waveforms can be applied to a circuit. The
common terminal provides a reference level for the signal. To use the instrument, click on the
Function Generator button in the Instruments toolbar and click to place its icon on the workspace.
The icon is used to wire the function generator to the circuit. Double clicking the function
generator, the waveform can be changed and its frequency, amplitude, duty cycle and DC offset
can be controlled.
XFG1

Positive Negative
Terminal Terminal

Common or Neutral
Terminal

Fig.10.3: (a) Function Generator Icon (b) Function Generator Menu

43

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

Oscilloscope
The Dual-Channel Oscilloscope displays the magnitude and frequency variations of electronic
signals. It can provide a graph of the strength of one or two signals over time, or allow comparison
of one waveform to another. To use the instrument, click on the Oscilloscope button in the
Instruments toolbar and click to place its icon on the workspace. The icon is used to wire the
oscilloscope to the circuit. Double-click on the icon to open the instrument face, which is used to
enter settings and view measurements.

XSC1

Ext T rig
+ Trigger
_
A B
+ _ + _ Terminals
Channel A
Terminals

Channel B
Terminals

Fig.10.4: Oscilloscope Icon

To display the exact values of the wave, drag the vertical cursor until the desired value appears.
You can also move a cursor to a precise location by right-clicking on it and using the pop-up menu
that appears. The cursors are the blue and yellow vertical lines. They trace along the waveform,
and the value of the signal at the point of the cursor is given in the big white box. The first row
lists the data for cursor 1. The second row lists the data for cursor 2. The third row contains data
relating the differences between the two cursor points (T2-T1). By right-clicking, the cursors can
be set to trace along either waveform.

44

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

Procedures to follow:

1. Construct the circuit shown in Fig.10.5.

Fig.10.5: Common Emitter BJT Amplifier

2. Now apply a 0Vpp sinusoidal input signal (Vin) with frequency of 50Hz. [Double clicking
the function generator[XFG1], you can set the AC voltage parameters.]
3. Vary the base bias potentiometer until you get a reading on Multimeter XMM1 [DC
Collector-Emitter voltage (VCE)] of 7.5V (approximately half of the supply voltage).
4. Select the Oscilloscope from the Instrument toolbar and place it onto the schematic.
5. Wire Channel A and Channel B terminals of the Oscilloscope to both the input and output of
the amplifier circuit. Place a ground component and connect it to the negative terminals of
the Oscilloscope. To easily differentiate between traces on the oscilloscope, right-click on
the wire connected to Channel B and select Segment Colour from the pop-up. Select a colour
that differs from the wire connected to the Channel A, for example blue and click the OK
button. Simulation cannot be running when changing wire colour. The schematic should look
like Fig.10.6.

45

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering

 Fig.10.6: Connecting the Oscilloscope to the Schematic

6. Set the function generator to generate a sinusoidal signal with 1V Amplitude and 50Hz
frequency. Go to Simulate  Run to start the simulation.
7. Double-click on the Oscilloscope to observe the simulation results (see the Figure shown
below). To get a good view of the input and output signals set the time base to 10ms/Div.,
meaning that the length of a grid block is 10ms. The scale has been adjusted to 2V/Div.,
meaning that the height of a grid block represents 2V for the channel A and B signal.

46

Applied Electronics I Laboratory Manual

Bahir Dar Institute of Technology, Faculty of Electrical and Computer Engineering