CUNT WORKBOOK =! Electrical Engineering Analog Electronics oesContents Important Formulae 1 WORKBOOK Electical Semiconductor Physics Diode CltCURtS nnn tn BIT BSN BIT Amplifief son sion Fleld Effect Transistor Multistage Amplifiers Feedback Amplifiers Operational Amplifiers. Oscillaotrs and Mulkivibrators 2B 32 38 48 52 56 5Analog Electronics IMPORTANT FORMULAE 1. Didoe Circuits Ripple factor of inductor filter for half wave rectifier Ripple factor (y) 2 = < 22 wpb y= (TS value of AC component | | 5 DC value =| (i) L-cFilter Form factor (F) & Ripple factor of LC filter for fullwave rectifier rms value _ Ving & v2. Xe] DC value Voc : 3 X,| Crest factor (C) 2 3 Capacitor Filter Peak value g| — Forhalf wave rectifier, ripple factor is ims value 7 Efficiency (n) 2 28 f,RLC Output DC power 2 | Peak to peak ripple voltage ‘AC input power z = v, = 1 rao [eee | Graremeaey [aaa | x ) 2] Forfull wave rectifie * = = : 5 |v = te te SORTER | RIE || 2h oo & a iv) C-L-C Filter ne ea 1a Lo / ae For half wave rectifier and full wave rectifier, ripple emoancy 0 RR 22 sR factor is —— tv | Sptam ||2 32 Kal Kex, 4 2 A el ar mn amg ||3 we | Roe | askin | mete |/9 Beatmiy 7 a 71/3 2. BJTand FET Biasing a} - = | Common Base Configuration Te=Ig+Io+h Te=Ig+l Filters fe = Ie + Ic + Fogo | or | te = Ie + Io (i) Inductor Filter Current amplification factor (a) Ripple factor of inductor filter for full wave rectifier4 Electrical Engineering @ Analog Electronics Collector current T= ale + Teo Base current amplification factor (8) i b=42| eo = OTB Total collector current TaeTane WTAOS & MADE EASY (i) Fixed biased circuit Thermal Run To = Bla + Togo | (0°) [Le = Bla + (1+ B)fowo | |* Current amplification factor (y) 5 Te ~ = Y ‘Tp. i fyst+B & Total emitter current f Te= (1+ Bla + (+ B)loao 3 ([Eaeamiea [ea Compaen |e npwatn [CE Coenen | 2 ‘Smal (150) ign 9), tonto inty | | see) we 7 S=1+8] (ii) Collector to Base bias circuit amperes 6a Me y008 # jysenred Valin ou 3. Midfrequency Analysis of Amplifiers ‘Common Emitter Amplifier ‘Output voltage Voltage gain Zn = Pi Re Bre Input impedance seen from base Zina Blote _ gr He = Br ‘Output impedance Common Base Amplifier Input impedanceMADE EASY Voltage gain Common Collector Amplifier (or Emitter Follower) DC output voltage Vou = in — Var Input impedance Zn = Fill Re BRE Input impedance seen from base B(Re + Fe) Zintoase ‘Output impedance Zag = 1g + Fel RillRe Voltage gain Hybrid model or low frequency model Current gain Input impedance Voltage gain T Rankimprovement Workbook 5 Common Source Configuration * Voltage gain Ye HR (ATV, "eRe +R, trom then = 79m Ro AT Ga wine,» Voge + inputimpedence _[Zq FilRe + Ouiputimeedangs Z {with load Ry) = [Rolla + (4+ DRs] withoutload. 8, = [Zo => tg +(u+ DRs ‘Common Drain Amplifier * Voltage gain BR, Ve tat Ro ++ OR, Vy C hoe = —9mFs. if rye then Anne, + Output impedance without load R, [> -(ta+Fo)| wat + Output moscancowi oad, If rye then Ete rR ued f rg->e then ‘Common Gate Amplifier Av= OmRo * Unloaded voltage gain: © Inputimpedance: | ZinG Electrical Engineering © Analog Electronics * Outputimpedance: Zo= Po Vi Vos + DC ON state resistance: | fosiom = 7 4, High Frequency Analysis and Multistage Amplifier Common emitter short circuit current gain ~ Rattze (Ce 4C,) gio t o fr = Pgh (b>? 1) f, = ——lie __ 2m hyolCe + Ce) o f Im © 2nlC, +C,) * Common emitter gain with resistive load atéutput A= Where, t= Omiys [Ce + CT Om Fi] feh> te Multistage Amplifier es t= ct ‘* When amplifier are non-identical then f= te thee TaeTane NAICS & fag wan NoRDerY Sv JON OI jysenred Valin ou MADE EASY AC analysis of 1. Non inverting input: + Voltage gain for non-inverting input Vout = Re. Vy 2h 2. Inverting input; + Differential voltage gain Re Az Be 2 ‘Common mode volta: MRR {ns = DAV Input bias current (/,) Tat h Ig = vt toe 2 Input offset current Fig = (Ip = 152) Inverting Amplifier GainMADE EASY Integrator i - ag) viat + Velo ) Logarithmic Amplifier Vi Vo = —nVpin fo = Vln Antilog Amplifier ¥, V, = =IoR antilog— nV, 6. Feedback, Power, Tuned Amplifiers andTimes Schmitt Trigger Triangular Wave Generator 2Re Ry CVeu | [7 _ 2A OVea RyVaar +Ve) | |? Reon Ve) 4R, Ry C Benet T, ‘Square Wave Generator or Astable Multivit 448 T= anc +8] Monostable Multivibrator a4 fe T= RCH in| + RC phase shift oscillator using BJT 1 RCVaK +6 2nRC JAK +6 RC Phase Shift Oscillator using FET TaeTane WTAOS & fag wan NoRoIerY ASV TOWN ONIN jysenred Valin ou T rank improvement Workbook 1 2nRCVE RC Phase Shift Oscillator using Op-Amp —1_ 2n ROVE Wein Bridge Oscillator i 2m RgRaCiCr Colpitt’s Oscillator Hartley Oscillator 7 2nJC(h + Le) 555 Astable Multivibrator 7 * Total time, T= Te + Tp = 0.698 (Ra + 2R)O ith feedback for -ve feedback. for +ve feedback. Sensitivity ‘3A, _ aATA A 1+ AB Feedback [ Input [Output | cain | ®[ Re Vattage series | vokege | votage | a, | * | + Garvenisenes | Votege | Curent) oy | # | + Voltage hunt | Curent | votege | Re | + | 4 Currenishunt | Curent | Cuvee) a, | + | + ooSemiconductor Physics (a) 557m (0) 8.20mA rom o| teem a Braman @1_ The space charge width of p-n junction diode, |= | @.6 A diode with a forward bias of 0.8 Vis carrying given excess hole concentration N,= 10° cnr, | 2.6 mA of current at room temperature. If y = 2 excess donor concentration Np = 10° cm, | for this diode, the dynamic resistance (r) of the ntrinsic concentration of charge cartier diode will bo n,=15 x 10" cm, will be____ x 10% cm. |® (a) 308 Q) (b) 102 (Assume Vp= 25 mV cg = 117 xe, and|Z| (6) 200 (@) 6160 f= 885 x 10°17 Fim) © | @.7 Considerthe folowing statements @2_The slope of Depletion width versus Vj, where | & 1. Ina forwardt-biased p-njunction, the injected V,= junction voltage of abrupt p* n junction, is | & hole current inn-regionis proportonalto the given by 10.49 x 10 cm/V"2, Then doping | & total charge Qof the injected minority carrier concentration of n-type atoms is 2 holes (Assumes = 11,7 ¢pande,=885% 10 Fiem), |B 2. If a p-n junction is heavily doped, (Neglect builtin potentia). g bbreakciown voltage will reduce. (a) 1.17 x 10° fom? (b) 1.17 x 10" ems, z 3. In a Zener diode, p and n materials are (©) 1.47 x 10" /em? (a) 1.47 x 10" fom? |B heavily doped, : to that of an ideal current source. current is g ° {@) increases if the doping concentration of |2 5. Potential barrier decreases at high é temperature. side is increased, : Which of these statements are correct? (&) increases ifthe doping concentration of |& fe) 12.3ands fe) 2 tans rside js ina, 5 (c) 1.2,4and5 (a) 2,3and5 (c) decreasésit the junction area is reduced. | (@) decreases if the doping of n and p side is In a reverse biased p-n junction, almost no increased current flows because (a) electrons and holes recombine before they @.4 What is dynamic resistance of a silicon p-n an cross the junction, Junetion diode, when the forward current is (0) only minority carriets, whose densities are 5mAat T= 300°K? very small, contribute to the current, when (a) 10349 (b) 22652 they cross the junction. (o) 8.202 (d) 16.459 5 (c) the electric field in the neutral regions is very @S_ Asilicon diode has a saturation currentof7.5uA |Z smal ‘al room temperature 300°K, The saturation | 7 (d) all the applied voltage appears across the current at 400° would be 5 ohmic contacts. Saori ROE ERSUMADE EASY T rank improvement Workbook 9 Publlsations @.9. Inmany commercial applications, temperatures | | @.11_ Themeanlifetime of holes for a Germanium P*N of electronic circuits can vary from -50°C to | diode is 101s, and a forward current of0.1 mA 125°C. To maintain a constant current ina diode | 9 flows through it. The diffusion capacitance of ‘over this temperature range, by how much will |= the diode at room temperature is the diode voltage have to change? $ (a) 168 (o) 23.6 pF (@ 141v (©) 089Vv g (6) 44.4nF (@) 38.5 pF (c) 0.44 (a) 0.65V z @.12 Assertion (A) : The dynamic resistance of a @.10 The bartier voltage (Vp or V,)in ajunction diode | 2 diode is constant, is the effect of 2 Reason (R) : Dynamic resistance of a diode is (@) the voltage needed to make the| = used for small-signal operation and is defined semiconductor material behave as a| 5 as the reciprocal of the slope of the volt-ampere ‘conductor. z characteristic, (©) the emf required to move the holes fast | 3 (a) Both A and)R are true and R is the correct enough to have the mobility equal to that of | © explatation6fiAl the electrons, g (b) Both AandR aretrue but Ris not the correct () the p-side and n-side of the junetion forming | © @xplanalion of A abattery. 2 (e) Ais trué)but R is false. (@) the recombination of charge cartiers across | # (6) Aig false but R is true. the junction leaving behind the opposite | = charged ions. g 2 on 3 3 Seoprig MADE EASE enanedomaypbodinayPSE) cea comers] Diode Circuits both the diodes are ideal. The impedance offered by the circuit across the terminal A and B is ° g 2, G1 Inthe circuit given below, all diodes are ideal. | 2 : g m le g Ly = ako ; tosinue(S) 10ka 10ka 2 2 S (a) 5k (©) 10 ko a (c)/ 20 ka. (@) 100 ka 3 | @.5), Tho diodes shown in fgure below areieal The The value of output voltage Vy, is equal v ou : circuitworks as to HC 2 Inthe crcuitshown below, assumethe diodes fe] 7 "| * are ideal andthe ammeter is an avagie |5| WF indicating meter with zero internal resistance. D, 2 2 _ oO 8 (a) Bridge rectifier (b) Voltage doubler Bo. : (c) Rectifier with fiter (d) Comparator dsinat VA aE 5 characterstics of zener diode is shown i 3 figure given below, 2 1800 The ammeter reading is ma |e @.3_ Assume that the supply voltage in the figure | 2 tsa shown belowstarts decreasing from 30 Vto 0V. The maximum supply voltage at which the zener 4ov voltage loses its regulating ability is v so0Ke. Powe ev Zoo @.4 Asinusoidal voltage source Vy.= 10sinatVots, | 3 's applied across the terminal A and B. Here |” Scone MADE EASEMADE EASY T rank improvement Workbook ll Publlsations ‘The power dissipation in the zener diode is (a) 0.5 Watts (b) 0 Watts (c) 0.17 Watts (d) Can'tbe calculated @.10 Consider a V-rgraph shown in figure below. Let V, is the zener breakdown voltage and V, be the avalanche breakdown voltage. Then V, and V, respectively corresponds to the points @.7__AZener regulator has an input voltage trom 15V (@ Aands 10.20 Vanda load current from 10 mA to 20 mA. (0) Band A Ifthe Zener voltage is 5 V, what is the value of (6) canbe either one the series resistance? (Assume J, mq = 0) ° fa) 2502 (t) 5000 z (4) cannot be determined (o) 7502 (a) 15002 2 | @.11 Find the percentage increase in the reverse 3 saturation current of a diode if the temperature @.8_ Which one of the following is the circuit shown | 3 is increased from 25°C to 55°C is in figure below? (Assume Rtove very large) |= (@) 125% (e) 1.25% g (o) 8% (6) 700% | @.12 Ifthe change in forward voltage applied across i diode is +50 mV, then the per unit change in current 2 in Gediode at room temperature of 27°C is, g (Assume Voge nV; and V,= 25 mV) (9) Ponive cape | page Ole (©) Negative clamper z (©) Peak-to-peak detector ¥ | @AB Consider the circuit shown below (a) Voltage doubler 7 3 ov @.9 Inthe circuit shown below, both the diodes are’) tov B cosia ideal x 15y 2 ———— y 8 Assuming V;to be 25 m\, the diffusion resistance 3 of the diode shown above will be __@ Ww (Take n= 1) .14 Consider the circuit shown in the figure below: vee 2a 2 6av >; R, IF, (0) = 108in(wf) V then the output waveform | 5 of the circuit V(t) can be represented by | 2 (Assume all the diode to be ideal) : The voltage regulator circuit has @ Zener diode +s vaso z with forward cut-in voltage V, = 0.7 V and the (@) valt= ly +t viso zener breakdown voltage V, = 4.8V, The value co es of knee current IS izing = 5 MA and the © wor 1 Mn > maximum power rating of zener diode is Vastt); Vy $0 3 0.48 W. Then the maximum value of power that © y= (i VYy20 can be dissipated in the load resistance R, and 0; <0 the maximum value of resistance R, 4 =H6(t respectively are Scoomah MADE RSH12 (@) 0.235 Wand 192. (0) 0.576 Wand 384.2 () 0.235 W and 384.2 (a) 0.576 Wand 192.2 Q.15 In the figure shown below, ive The Vay Of the circuit is (Assume the cut in voltage of the diode V, = 0.7 V) (a) 84V (b) 62 () 92 (d) ov @.16 Adiode circuil shown below is to be used as a switching circuit. The outputof the circuit isread as logic high or logic low, Let the reference voltage is 1.1 V, if Vis above this reference voltage, the output is logic high else output is logic low. Taking the cut in voltage of each diode to be 0.7 V, then the minimum value of input for which the output will be logic high is. v. @.17 What are the values of V, and I for the diode circuit shown below? (Assume the drop across the diodes to be 0.7 V) Electrical Engineering @ Analog Electronics Paneva dow Oven ro 20 F004 + MADE EASY ay sv (a) -2.2V and -0.25 mA respectively (b) -1.9V and 0 mA respectively (c) -2.2V and =0.14 mA respe (d) -1.9 Vand 0.25 mA respe ely ely @.18 The cutin voltage'for each diode in figure is Vj= 06 WeEach diode current is 0.5 mA. The value of R,, R, and R, will be respectively ertov wove (a) 10k@, 5k, 2.93 ko (0) 6 KO, 3kO, 3.43 KQ (0) 5kO, 6 KO, 4.93 k2 (6) 6kO, 8k2, 6.43 KQ @.19 Consider the circuit shown in the figure belowMADE EASY The output curve of V,,, versus J, can be represented as (a) ——_|" ©) rr () —— @.20 Consider half wave rectifier with fier shown inthe figure fed with a 60 Hz sinusoidal signal having a peak value V, 400 V, Le load resistance R= 10kQ. The value of capacitance (in uF) such that peak to peak ripple voltage is 2v. aang WBNS @ ag aan NoRoeRY ASV TOWN OSI T rank improvement Workbook 13 @.21 Assume that the cut in voltage for the diode is 0.7 V. Then which of the clipper circuit performs the operations given below: v : - kD © v wi w - - R 2 e, a o R or z* - av -14 Electrical Engineering @ Analog Electronics @.22 A Si p*n junction has a donor doping of 5 x 108 cm? on n-side and cross sectional area of 10- em?. Given that constant D, = 10 cm*s and diffusion length of holes is 3.16 x 10% em. If the diode is reverse biased with a voltage of 0.5 Volts at temperature 300K, then the magnitude of the current lowing through the diode is (Assume V, = 26 mV, n, (@) 2278x 10% A (b) 3.47 x 10° A, (0) 2278x108 A (6) 347x107, diffusion 15 x 10" ems) @.23 Consider a silicon fon junction at temperature T= 300 K. The doping concentration on p-side and nside are N, = 10° car and Np= 10'° cm? respectively and depletion region width on n-side 's given by 0.864 um, Magnitude of the maximum electric field generated at pn junction is x 104 V/cm, (Given eg, = 1.04 x 10°"? Fjem) @.24 Find the ratio of hole diffusion current to the electron diffusion current crossing junetion of p-ndiode, it conductivity at p-sideis 1.4 S/om and at n-side is 0.4 Siem Assume L,, = L,, = 0.10.em (a) 0.10 (b) 35 fo) 0.14 (d) 056 @.25 A silicon abrupt junction at T= 200 K is doped with imputity congentrations N= 1.86 x 10 car® and N, = 1.024 x 10% env, And the intrinsic cartier concentration n, =0.785 x 10" em. Then the buiit-n potential is v. (Assume Boltzmann constant K = 8.62 x 10° eVi*K, complete ionization at T= 200 Kk). aang WB ukaoD @ ag aan NoROIeRY ASV TOWN 8 do 2a FU p004 Fh MADE EASY Gey ‘Objective Quenitone @.26 Consider the circuit given below along with the input waveform V, 5v 26v ar 26V| ifthe diode is ideal, then the waveform of output voltage V, will be Y% 25v tay] 135V fa) av