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Tutorial 2

The document is a tutorial sheet for EC 201, dated 08/11/2024, containing problems related to MOSFET characteristics, including I-V relationships, calculations of output resistance, early voltage, and channel length modulation. It also covers CMOS process parameters, capacitance characteristics of MOS capacitors, and ID-VD characteristics of ideal MOSFETs. The exercises require derivations, calculations, and sketches related to semiconductor physics and device operation.

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4 views

Tutorial 2

The document is a tutorial sheet for EC 201, dated 08/11/2024, containing problems related to MOSFET characteristics, including I-V relationships, calculations of output resistance, early voltage, and channel length modulation. It also covers CMOS process parameters, capacitance characteristics of MOS capacitors, and ID-VD characteristics of ideal MOSFETs. The exercises require derivations, calculations, and sketches related to semiconductor physics and device operation.

Uploaded by

deepak.kumar.ece23
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EC 201: Tutorial sheet

08/11/2024

1. Derive the I-V relationship for an ideal MOSFET.


2. For a particular MOSFET operating in the saturation region at a constant VGS, ID is found
to be 2 mA for 𝑉𝐷𝑆 = 4 𝑉 and 2.2 mA for 𝑉𝐷𝑆 = 8 𝑉. Calculate the values of
𝑟0 (𝑂𝑢𝑡𝑝𝑢𝑡 𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒), 𝑉𝐴 (𝐸𝑎𝑟𝑙𝑦 𝑣𝑜𝑙𝑡𝑎𝑔𝑒) 𝑎𝑛𝑑 𝜆 (channel length modulation
parameter).
3. Consider a CMOS process for which 𝐿𝑚𝑖𝑛 = 0.8 𝜇𝑚, 𝑡𝑜𝑥 = 15 𝑛𝑚, 𝜇𝑛 = 550 𝑐𝑚2 /
𝑉. 𝑠 and 𝑉𝑇𝐻 = 0.7 𝑉.
(a) Find 𝐶𝑜𝑥 and 𝑘𝑛′
(b) For an NMOS transistor with W/L=16 μm/0.8 μm, calculate the values of
𝑉𝑂𝑉 (= 𝑉𝐺𝑆 − 𝑉𝑇𝐻 ), 𝑉𝐺𝑆 𝑎𝑛𝑑 𝑉𝐷𝑆𝑚𝑖𝑛 to operate the transistor in saturation region
with 𝐼𝐷𝑆 = 100 𝜇𝐴.
(c) For the device in (b), find the value of 𝑉𝑂𝑉 𝑎𝑛𝑑 𝑉𝐺𝑆 required to cause the device to
operate as a 1000 Ω resistor for very small 𝑉𝐷𝑆 .
4. An ideal MOS-C is operated at 300 K. 𝑡𝑜𝑥 (𝑜𝑥𝑖𝑑𝑒 𝑡ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠) = 0.1 𝜇𝑚 𝑎𝑛𝑑 𝑁𝐷 =
2 × 1015 /𝑐𝑚3 .
(a) Sketch the general shape of the high frequency C-V characteristic to be expected from
the given device.
(b) Defining CMAX to be the maximum high-frequency capacitance, determine CMAX.

(c) Defining CMIN to be the minimum high-frequency capacitance, determine CMIN.

(d) If 𝑉𝐺 = 𝑉𝑇 , determine 𝜑𝑆 .
(e) Determine VT.
5. The energy band diagram for an ideal MOS-capacitor (oxide thickness, d=0.2 μm)
operated at 300 K is shown below. Note that the applied gate voltage causes band bending
in the semiconductor such that 𝐸𝐹 = 𝐸𝑖 at the Si-SiO2 interface. Answer the following
questions:

(a) What is the electron concentration at the Si-SiO2 interface?


(b) 𝑁𝐷 =?
(c) 𝜙𝑆 =?
(d) 𝑉𝐺 =?
(e) What is the voltage drop (∆𝜙𝑜𝑥 ) across the oxide?
(f) What is the equivalent capacitance C of the MOS-capacitor at the pictured bias
point?
6. An ID-VD characteristic derived from an ideal MOSFET is pictured below. Note that
𝐼𝐷𝑠𝑎𝑡 = 10−3 𝐴 and 𝑉𝐷𝑠𝑎𝑡 = 5 𝑉 for the given characteristic. Answer the following
questions:

(a) Given a turn-on voltage of 𝑉𝑇 = 1 𝑉, what is the gate voltage one must apply to the
MOSFET to obtain the pictured characteristic?
(b) Determine 𝑔𝑑 if the quiescent operating point of the MOSFET is point (3) on the
pictured characteristic.
(c) Determine 𝑔𝑚 if the quiescent operating point of the MOSFET is point (3) on the
pictured characteristic.
(d) Suppose the gate voltage is readjusted so that 𝑉𝐺 − 𝑉𝑇 = 3 𝑉. For the new condition,
determine 𝐼𝐷 if 𝑉𝐷 = 4 𝑉.

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