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Experiment No. 5

The document outlines Experiment No. 5, which aims to study the characteristics of a transistor in common base configuration using specific apparatus and procedures. It describes the theory behind transistors, including their structure and biasing, and details the steps to observe input and output characteristics through a series of measurements. Additionally, it includes precautions to avoid damaging the transistor and ensure correct circuit connections.

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hemantjangda2006
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11 views3 pages

Experiment No. 5

The document outlines Experiment No. 5, which aims to study the characteristics of a transistor in common base configuration using specific apparatus and procedures. It describes the theory behind transistors, including their structure and biasing, and details the steps to observe input and output characteristics through a series of measurements. Additionally, it includes precautions to avoid damaging the transistor and ensure correct circuit connections.

Uploaded by

hemantjangda2006
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Experiment No.

Aim: To study the characteristics of transistor in common base configuration.

Apparatus: Two DC power supplies (0 to 1 & 0 to 10 V), two voltmeters (0 to 1 & 0 to 10


V), two milliammeters (0 to 50 mA), a pnp transistor, connecting wires.

Theory: The transistor is a three-layer (called emitter, base and collector) semiconductor
device consisting of either two n- and one p-type layers of material or two p- and one n-type
layers of material. The former is called an npn transistor, while the latter is called a pnp
transistor (Fig. 1). The emitter (E) layer is heavily doped, the base (B) lightly doped, and the
collector (C) moderately doped. The outer layers have widths much greater than the
sandwiched p- or n-type material. The abbreviation BJT, from bipolar junction transistor, is
often applied to this three terminal device.

The biasing of the transistor is done differently for different uses. The transistor works as an
amplifier, with its emitter-base junction forward biased and the base-collector junction
reverse biased. When the transistor is biased in this way it is said to be in active state.

When a transistor is used in common-base configuration, the input is between the emitter and
the base and the output is between the collector and the base.

Input Characteristics: The common-base input characteristics are plotted between emitter
current IE and the emitter-base voltage VEB, with collector-base voltage VCB kept constant.

Output Characteristics: The common-base output characteristics are plotted between


collector current IC and the collector-base voltage VCB, with the emitter current IE kept
constant.

Circuit Symbol:

Fig. 1: Symbols for (a) npn transistor, (b) pnp transistor


Circuit Diagram:

Fig. 2

Procedure:

Input characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep output voltage VCB = _____V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter-base voltage VEB.
4. Vary VEE in steps of 0.1V up to 1V.
5. Repeat above procedure (step 3) for VCB = _____V.

Output characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep emitter current IE = ______ mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 10V and note down collector current IC
and collector-base voltage (VCB).
4. Repeat above procedure (step 3) for IE = __________mA, and _________mA.

Observation Table:

Range of voltmeter:

Least count of voltmeter:

Range of ammeter:

Least count of ammeter:


Input characteristics
VCB =______V VCB =______V
S. No. VEB (volts) IE (mA) VEB (volts) IE (mA)

Output characteristics
IE =______mA IE =______mA IE =______mA
S. No. VCB (volts) IC (mA) VCB (volts) IC (mA) VCB (volts) IC (mA)

Result:

The input and output characteristics of given transistor in common base configuration are
shown in the graphs.

Precautions and Sources of Error:

1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damaging of the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.

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