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Experiment No. 6

The document outlines Experiment No. 6, which aims to study the characteristics of a transistor in common emitter configuration using various apparatus. It details the theory behind bipolar junction transistors, the procedure for measuring input and output characteristics, and includes observation tables for recording data. Additionally, it lists precautions to avoid damaging the transistor and ensure accurate measurements.

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18 views3 pages

Experiment No. 6

The document outlines Experiment No. 6, which aims to study the characteristics of a transistor in common emitter configuration using various apparatus. It details the theory behind bipolar junction transistors, the procedure for measuring input and output characteristics, and includes observation tables for recording data. Additionally, it lists precautions to avoid damaging the transistor and ensure accurate measurements.

Uploaded by

hemantjangda2006
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Experiment No.

Aim: To study the characteristics of transistor in common emitter configuration.

Apparatus: Two DC power supplies (0 to 1 & 0 to 10 V), two voltmeters (0 to 1 & 0 to 10


V), one microammeter (0 to 250 μA), one milliammeter (0 to 50 mA), a pnp transistor,
connecting wires.

Theory: The transistor is a three-layer (called emitter, base and collector) semiconductor
device consisting of either two n- and one p-type layers of material or two p- and one n-type
layers of material. The former is called an npn transistor, while the latter is called a pnp
transistor (Fig. 1). The emitter (E) layer is heavily doped, the base (B) lightly doped, and the
collector (C) moderately doped. The outer layers have widths much greater than the
sandwiched p- or n-type material. The abbreviation BJT, from bipolar junction transistor, is
often applied to this three terminal device.

The biasing of the transistor is done differently for different uses. The transistor works as an
amplifier, with its emitter-base junction forward biased and the base-collector junction
reverse biased. When the transistor is biased in this way it is said to be in active state.

When a transistor is used in common-emitter configuration, the input is between the base and
the emitter and the output is between the collector and the emitter.

Input Characteristics: The common-emitter input characteristics are plotted between base
current IB and the base-emitter voltage VBE, with collector-emitter voltage VCE kept constant.

Output Characteristics: The common-emitter output characteristics are plotted between


collector current IC and the collector-emitter voltage VCE, with the base current IB kept
constant.

Circuit Symbol:

Fig. 1: Symbols for (a) npn transistor, (b) pnp transistor


Circuit Diagram:

Fig. 2

Procedure:

Input characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep output voltage VCE = _____V by varying VCC.
3. Varying VBB gradually, note down emitter current IB and base-emitter voltage VBE.
4. Vary VBB in steps of 0.1V up to 1V.
5. Repeat above procedure (step 3) for VCE = _____V.

Output characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep emitter current IB = ______ μA by varying VBB.
3. Varying VCC gradually in steps of 1V up to 10V and note down collector current IC
and collector-emitter voltage (VCE).
4. Repeat above procedure (step 3) for IB = __________μA, and _________μA.

Observation Table:

Range of voltmeter:

Least count of voltmeter:

Range of ammeter:

Least count of ammeter:


Input characteristics
VCE =______V VCE =______V
S. No. VBE (volts) IB (μA) VBE (volts) IB (μA)

Output characteristics
IB =______μA IB =______μA IB =______μA
S. No. VCE (volts) IC (mA) VCE (volts) IC (mA) VCE (volts) IC (mA)

Result:

The input and output characteristics of given transistor in common emitter configuration
are shown in the graphs.

Precautions and Sources of Error:

1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damaging of the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.

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