AN1767

Solutions for Radio Frequency Electromagnetic Interference

in Amplifier Circuits

Author: Dragos-George Ducu Since EMI can affect most electronic devices, including
medical and avionics equipment, modern devices
Microchip Technology Inc.
include EMI filters to ensure the proper operation in
harsh EMI environments. An EMI filter is typically used
WHAT IS ELECTROMAGNETIC to suppress conducted interference present on any
INTERFERENCE (EMI) power or signal line. It may be used to suppress the
interference generated by the device itself, as well as
Nowadays, the number of mobile devices increases to suppress the interference generated by other equip-
day by day. All mobile devices are wireless and radiate ment, in order to improve the immunity of a device to
electromagnetic waves producing electromagnetic the EMI signals present within its electromagnetic
interference with other devices. environment.
Electromagnetic interference is a disturbance that The impedance of an EMI filter has a highly reactive
affects an electrical circuit due to either electromagnetic component. This means the filter provides much higher
induction or electromagnetic radiation emitted by an resistance to higher frequency signals. This high
external source. Man-made or natural external impedance attenuates or reduces the strength of these
disturbances cause degradation in the performance of signals, so that they have less of an effect on other
electrical equipment. devices. Most EMI filters are discrete components; how-
EMI can enter a system (or device) through either con- ever, the latest trend is to integrate EMI filters inside the
duction, radiation or both. Radiated EMI is most often integrated circuit. This application note discusses both
conducted by Printed Circuit Board (PCB) traces or approaches to solving EMI issues.
wires that lead to active devices, such as op amps. The In order to increase EMI immunity, Microchip Technology
physical length of these traces and wires makes them Inc. has started designing op amps and other linear
effective antennas at microwave and Radio Frequen- devices with input EMI filters. For instance, the
cies (RF). Additionally, EMI-sensitive devices may be MCP642X family has enhanced EMI protection to mini-
placed within a shielded container that highly attenu- mize any electromagnetic interference from external
ates such radiated signals. In this case, the wires and sources, such as power lines, radio stations and mobile
connections in and out of the container form the only communications. This feature makes the devices well
conduction path for the EMI signals into the devices. suited for EMI-sensitive applications.
Conducted EMI, on the other hand, originates from
several sources. In addition to radiated EMI signals,
conducted EMI may enter a system through the power
mains or may be generated by the system itself.
Switching power supplies, for example, can be a
source of EMI.
Electromagnetic interference examples include the
noise you hear in the speaker when you put a cell
phone near a computer speaker or the loud static noise
produced by the tape player when you make a call on
a cell phone in the car. This EMI propagates in the sys-
tem through conduction over signal, power lines and/or
through radiation in empty space. The most common
sources of conducted interference are switching power
supplies, AC motors, microcontrollers or digital circuits.

 2014 Microchip Technology Inc. DS00001767A-page 1

AN1767
TYPES OF EMI
EMI can be classified in many ways: Load

• By its coupling mechanism:

EMI EMI
- Radiated Source Victim
- Conducted
• By the way it was created:
- Man-made EMI
- Naturally occurring EMI
• By its duration:
- Continuous interference
GND
- Impulse noise
• By the bandwidth: FIGURE 1: Inductive Coupling.
- Narrowband • Capacitive Coupling – If the voltage in a
- Broadband conductor is changed, then this creates an
The most important classification of EMI for system and electric voltage coupled with the nearby conductor
electronic designers is coupling mechanisms. In radi- and induced voltage in it. The noise is injected in
ated coupling, the source and victim are separated by a the affected conductor with the CC * dVL/dt value,
distance. The source radiates a signal and the victim where CC is the capacitance between conductors.
receives it in a way that disrupts its performance. In con-
Parasitic Capacitance
ducted coupling, there is a conduction route along which
the signal can travel (power cables, interconnection Load
cables).
Coupled EMI has the following modes: EMI EMI
Source Victim
• Common-mode EMI coupling occurs when the
noise has the same phase in the two conductors.
• Differential-mode EMI coupling occurs when the
noise is out of phase on the two conductors.
Depending on the type of EMI coupling, Common-
mode and Differential-mode EMI may require separate
filters. GND GND

The two forms of induced coupling (Figure 1), capacitive FIGURE 2: Capacitive Current Coupling.
coupling and magnetic coupling, are presented in • Magnetic Induction – Magnetic coupling occurs
Figures 2 and 3. when a parasitic magnetic field is transferred
• Inductive Coupling – When an EMI source has between the source and the victim. Variation of
the same ground as the EMI victim, then any the current in a conductor creates a magnetic
current due to the EMI source enters the ground field, which couples with nearby conductors and
connection and generates a parasitic voltage at induces parasitic voltage in it. The voltage
the EMI victim input. The signals with high induced is VM = -M * diL/dt, where M is the mutual
frequency and high di/dt at the output of the EMI inductance.
source will couple more efficiently into the EMI
victim because the ground plane impedance
appears as an inductance for these signals. If a
feedback path exists between these two circuits, Load
then the parasitic signals can cause oscillations.
The solution consists in separate ground
EMI EMI
connections for both circuits, avoiding common Source Victim
impedance. * *

Mutual Inductance

FIGURE 3: Magnetic Coupling.

DS00001767A-page 2  2014 Microchip Technology Inc.

 AN1767
DEFINING EMIRR Many gas sensors have a metal mesh which covers the
sensor in order to reduce EMI sensitivity. Metal mesh
The op amp’s primary response to RF EMI is an offset dimensions match the frequency of radiation to be
error voltage or offset voltage shift. This error is screened, allowing gases to pass into the sensor, and
reflected at the op amp’s output, causing performance yet provide electromagnetic screening. Although the
degradation in the system. The offset voltage shift is mesh size of the screen will affect the maximum
due to a nonlinear conversion of the AC EMI into a DC attenuated frequency, screens with up to 2 mm spacing
signal. The nonlinear behavior appears because of are adequate for covering regions up to 100 MHz. How-
internal p-n junctions, which form diodes and rectify ever, high-frequency interference can pass through the
EMI signals, usually at the inputs’ ESD diodes. The metallic mesh, affecting the sensor.
error signal caused by EMI is superimposed over the
existing DC offset voltage.
The parameter which describes the EMI robustness of
an op amp is the Electromagnetic Interference Rejection &
Ratio (EMIRR). It quantitatively describes the effect that 5HJXODWRUV
/LQHDU 6ZLWFKLQJ
an RF interfering signal has on the op amp’s perfor- 5
*DV6HQVRU
mance. Newer devices with internal passive filters have (OHPHQW
improved EMIRR over older devices without internal 
filters. This means that, with good PCB layout 0&3[[
MCP64XX
$'&
!ELWV 3,&
Š
0&8
5
techniques, the EMC (Electromagnetic Compatibility) 
performance will be better.
EMIRR is defined as shown in Equation 1:

EQUATION 1: FIGURE 4: Gas Sensor Signal Chain.

VRF
EMIRR(dB) = 20  log  ------------- Pressure Sensors
 V OS
In Figure 5, a three op amp instrumentation circuit has
Where:
been used to condition signal from the pressure sensor.
VRF = Peak Amplitude of RF Interfering An op amp without internal EMI filtering produced
Signal (VPK) Figure 6, while the MCP6421 EMI-hardened op amp
VOS = Input Offset Voltage Shift (V) produced Figure 7.
The difference between the two types of op amps is
clearly visible. The typical standard op amp has an
TYPICAL APPLICATIONS WITH output voltage shift (disturbing signal) larger than 1V as
a result of the RF signal transmitted by the cell phone.
EMI-HARDENED OP AMPS The EMI-hardened op amp does not show any
All amplifier applications need EMI filtering; the significant disturbances.
following examples are used to illustrate this point. As can be seen, the design with the MCP6424 is robust
without any external EMI filtering.
Gas Sensors
Gas sensors are devices which detect the presence VDD
VDD R3
and the level of certain gases. They are usually R + R R – R 10 k
battery-powered and transmit audible and visible MCP6421
warnings. R1 VDD
100
For instance, a carbon monoxide (CO) sensor responds VB VOUT
to CO gas by reducing its resistance proportionally to VA MCP6421
VDD R2
the amount of CO present in the air that is exposed to 100 R5
the internal element. Because this sensor can be 10 k
corrupted by parasitic electromagnetic signals, the EMI R – R R + R
MCP6421
op amp (MCP6421) can be used to condition this
sensor. Although magnetic fields are rare, they could
10 k
create noise by being coupled into the circuit due to the VOUT = (VA – VB)
100
circuit’s low impedance around the sensor.
FIGURE 5: Wheatstone Bridge Amplifier.

 2014 Microchip Technology Inc. DS00001767A-page 3

AN1767

VDD VDD
0.5V/div

VOUT
10 IDD MCP6421
VSS
1.8V 100 k
to
Time (0.5s/div) 5.5V
1 M
FIGURE 6: Output of Pressure Sensor VDD – VOUT
Amplifier with Standard Op Amps and No IDD =
(10V/V) • (10)
External Filtering.
High-Side Battery Current Sensor

FIGURE 8: Battery Current Sensing.

0.5V/div

0.5V/div

Time (0.5s/div)

FIGURE 7: Output of Pressure Sensor

Time (0.5s/div)
Amplifier with EMI-Hardened (MCP6421)
Op Amps without External Filtering. FIGURE 9: Output of Current Sensor
with EMI-Hardened Op Amp.
Current Sensors
The MCP6421/2/4 op amps’ Common-mode input
range, which goes 0.3V beyond both supply rails,
supports their use in high-side and low-side battery
current sensing applications. The low quiescent current
0.5V/div

helps prolong battery life and the rail-to-rail output

supports detection of low currents.
Figure 8 shows a high-side battery current sensor
circuit. The 10 resistor is sized to minimize power
losses. The battery current (IDD) through the 10
resistor causes its top terminal to be more negative
than the bottom terminal. This keeps the Common- Time (0.5s/div)
mode input voltage of the op amp below VDD, which is
within its allowed range. The output of the op amp will
FIGURE 10: Output of Current Sensor
also be below VDD, within its maximum output voltage
swing specification. Low-power current sensing is
with Standard Op Amp.
widely used, even in automotive applications.
Figures 9 and 10 show the difference between the
EMI-enhanced op amp and a standard op amp. As can
be seen in Figure 10, the parasitic signal represented
with continuous pulses gives a wrong output current
value.

DS00001767A-page 4  2014 Microchip Technology Inc.

 AN1767
CLASSICAL SOLUTION FOR EMI
5)
REDUCTION
9&&
5*
External Filters  8

The traditional way to reduce parasitic RF signals, or to 5 *1'

prevent them from entering the op amp input stage, is to 9,1 

use a Low-Pass Filter (LPF) located close to the input. &

For the inverting op amp in Figure 11, the filter capacitor *1'
C is placed between the equal value resistors, R1 and
R2. Note that C cannot be connected directly to the
inverting input of the op amp, since that would cause *1'
instability. In order to minimize signal loss, the filter FIGURE 12: Non-Inverting Amplifier with
bandwidth should be at least 20 or 30 times the signal EMI External Filter.
bandwidth. For the non-inverting op amp in Figure 12,
capacitor C can be connected directly to the op amp Equation 2 is used to calculate the cutoff frequency for the
input, as shown, and an input resistor with a value, “R”, EMI filters of the inverting and non-inverting amplifiers.
yields the same corner frequency as the inverting
op amp. EQUATION 2:
In both cases, low inductance chip-style capacitors 1
must be used. The capacitor must be free of resistive f = ---------------
2  RC
losses or voltage coefficient problems, which limits the
choice to either the NP0 mentioned or a film type. Note
Precision Instrumentation Amplifiers (INA) are
that a ferrite bead can be used instead of R1. However,
particularly sensitive to DC offset errors due to the
ferrite bead impedance is not well controlled, is
presence of Common-mode (CM) EMI/RFI. This is very
nonlinear and is generally not greater than 100Ω at
similar to the problem in op amps and, as is true with op
10 MHz to 100 MHz. This requires a large value
amps, the sensitivity to EMI/RFI is more acute with the
capacitor to attenuate lower frequencies.
lower power in-amp devices.
The relatively complex balanced RC filter preceding the
5)
INA performs all of the high-frequency filtering.
9&& Common-mode chokes offer a simple, one-component
EMI/RFI protection alternative to the passive RC filters,
5 5 as shown in Figure 13. In addition to being a low
8
9,1 
component count approach, choke-based filters offer
&
9287 low noise by dispensing with the resistances. However,
 selecting the proper Common-mode choke is critical.
Note that, unlike the family of RC filters, a choke only
filter offers no differential filtering. Differential-mode
*1' (DM) filtering can be added with a second stage
*1' *1'
following the choke.
FIGURE 11: Inverting Amplifier with EMI Because even the best CM chokes create some DM
External Filter. currents (mainly because of leakage inductance), two
Differential-mode chokes, followed by a capacitor across
the input terminal of the amplifier, must be added follow-
ing the CM choke. The two CM capacitors must be
grounded to the enclosure or to the analog ground.

Differential-mode Chokes VCC

CCM1 - U3
VIN1
CDIFF VOUT
VIN2
+
CCM2 GND
Common-mode Choke

GND
FIGURE 13: Differential Amplifier with External EMI Filter.

 2014 Microchip Technology Inc. DS00001767A-page 5

AN1767
Figure 14 shows a classical three op amp INA with RC One way to place components symmetrically is to place
filters at the input. If the time constants of R5 – C5 and R5 – C5 and R6 – C6 symmetrically around C4.
R6 – C6 are not well matched, some of the input Figure 14 represents the MCP6H04 INA evaluation
Common-mode signal at VIN is converted to a board (order number: MCP6H04EV). Three tests have
Differential-mode signal at the Instrumentation been conducted with this evaluation board. A personal
Amplifier inputs. For this reason, C5 and C6 must be mobile phone has been used as an EMI parasitic signal
well matched and much smaller than C4. Moreover, R5 source, with the input signal being a 10 mV
and R6 must also be well matched. It is assumed that peak-to-peak sine wave.
the source resistances seen on the VIN terminals are
low with respect to R5 – R6 and matched. In this type of The cell phone was 10 cm above the board and the
filter, the chosen C4 must be much larger than C5 or C6 parasitic signal is an approximately 850 MHz GSM
(C4 >> C5 and C4 >> C6) in order to suppress spurious signal.
differential signals due to CM-to-DM conversion,
resulting from the mismatch between the R5 – C5 and
R6 – C6 time constants. The overall filter bandwidth
must be at least 10 times the input signal bandwidth.
Physically, the filter components must be symmetrically
mounted on a PC board with a large area ground plane
and placed close to the Instrumentation Amplifier
inputs for optimum performance.

VCC
GND
VCC
R5 R3
VIN (–) +B GND 2 -D
100K
VSS R1 R2 JP1 2 GND VDD
1K MCP6H04 1 1
OUTB OUTD
U1B
VDD 10K 10K VREF VSS
-B MCP6H04 +D
U1D
VCC
GND R4 C3
RF
50K 100K 0.1 μF

C5 GND
10 nF GND GND
U1A
GND +A MCP6H04
RG VSS
1K OUTA TP1
C4
100 nF VDD VOUT
-A
RL
10K CL
VCC
60 pF
C6
C1
10 nF RF*
100 nF
50K GND GND
GND
GND
VCC

-C
MCP6H04 VDD R1* R2*
U1C OUTC
R6 VSS 10K 10K
VIN (+) +C
1k
GND

FIGURE 14: Three Op Amp Instrumentation Amplifier.

For the first test, we have removed the EMI input filter The parasitic signal rejection ratio for larger band-
(R5 – C5, C4, R6 – C6) and have applied the parasitic widths, for example, 400 MHz – 3 GHz (Equations 3
signal from the cell phone. The results can be seen in and 4), does not provide the same level of accuracy
Figure 15. because of the parasitic inductance of the capacitors.
For the second test, the inputs filters have been left on For instance, the inductance of 0603 SMD capacitors
the board and the test has been repeated. The results with a tight PCB layout is around 5 nH. The 10 nH
can be seen in Figure 16. capacitors would have a resonant frequency around
23 MHz. Many EMI filters use 100 pF capacitors,
The filter bandwidth for the Common-mode is calcu- whose resonant frequency would be around 230 MHz.
lated using Equation 3, while the filter bandwidth for the This can make a big difference in EMI rejection. Such a
Differential-mode is calculated using Equation 4. difference can be noticed by comparing Figures 16
These equations are used to estimate the parasitic and 17. In Figure 17, the 10 nF C5 and C6 capacitors
signal rejection ratio for a narrow bandwidth. have been replaced with 100 pF capacitors.

DS00001767A-page 6  2014 Microchip Technology Inc.

 AN1767
For the third test, the MCP6H04 op amp has been
replaced with the MCP6424 EMI-hardened op amp and EMI Signal
the EMI input filters (R5 – C5, C4, R6 – C6) have been
removed. The test has been repeated under the same
conditions and the results can be seen in Figure 18.

0.5V/div
EQUATION 3:
Input Signal
1
BW CM = -----------------------------------------------------
2   R 5  R 6   C 5  C 6 

EQUATION 4: Output Signal

1
BWDM = ------------------------------------------------------------------------
2   R5 + R 6   2C 4 + C 5  C 6  Time (0.5s/div)

FIGURE 17: Standard Amplifier with

EMI Signal
External Filtering (C5 = C6 = 100 pF).

EMI Signal
0.5V/div

0.5V/div
Input Signal

Input Signal

Output Signal

Output Signal
Time (0.5s/div)
FIGURE 15: Standard Amplifier without Time (0.5s/div)
External Filtering.
FIGURE 18: EMI Amplifier (MCP6424)
without External Filtering.
EMI
Parasitic
SignalSignal
Pin Protection
Amplifier outputs also need to be protected from
0.5V/div

EMI/RFI, especially if they must drive long lengths of

Input Signal cable, which act as antennas. RF signals received on
an output line couple back into the amplifier input
where they are rectified and appear again on the output
as an offset shift.
Output Signal
A resistor and/or ferrite bead in series with the output is
the simplest and least expensive output filter, as shown
Time (0.5s/div) in Figure 19. Adding a resistor-capacitor-resistor “T”
FIGURE 16: Standard Amplifier with circuit, as shown in Figure 19 (lower circuit), improves
External Filtering (C5 = C6 = 10 nF). this filter with just slightly more complexity. The output
resistor and capacitor divert most of the high-frequency
energy away from the amplifier, making this configura-
tion useful even with low-power active devices. Of
course, the time constant of the filter must be chosen
carefully in order to minimize any degradation of the
desired output signal. The ferrite bead can increase
nonlinear distortion in some cases, especially when the
output current is high.

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AN1767

9 120
&&
110 V
PEAK = 100 mVPK
100 MCP6421
VDD=5.5V

EMIRR (dB)
 8 90
5& 80
VOUT 70
FB1
60

50
40
30
20 MCP6286
*1'
10
V 0
CC
100k 1M 10M 100M 1G 10G
Frequency (Hz)
 8
5$ 5B FIGURE 20: EMIRR vs. Frequency for
VOUT EMI-Hardened and Standard Op Amps.
 &7
Figure 21 shows the efficiency of the EMI-hardened
op amps in rejecting various levels of parasitic noise.

*1' *1'
120
FIGURE 19: Output Pin Protection 100
400 MHz

Techniques.
MCP6421
EMIRR (dB) 80

Second-Order Effects Caused by EMI 60

The most common op amp response to EMI is a shift in 40

the DC offset voltage that appears at the op amp
MCP6286
output. Conversion of a high-frequency EMI signal to 20
DC is the result of the nonlinear behavior of the internal
0
diodes, formed by silicon p-n junctions inside the 0.01 0.1 1
device, especially the ESD diode. This behavior is RF Input Peak Voltage (VPK)
referred to as rectification because an AC signal is
converted to DC. The RF signal rectification generates FIGURE 21: EMIRR vs. Parasitic Signal
a small DC voltage in the op amp circuitry. When this Level for EMI-Hardened and Standard Op Amps.
rectification occurs in the op amp signal path, the effect
is amplified and appears as a DC offset at the op amp
output. This effect is undesirable because it adds to the
offset error.
EMIRR is a useful metric to describe how effectively an
op amp rejects rectifying EMI. As can be seen in
Figure 20, EMI-hardened op amps are more efficient in
rejecting high-frequency EMI than standard op amps.
MCP6421 has a high Electromagnetic Interference
Rejection Ratio (EMIRR) at 1.8 GHz (97 dB) compared
to the MCP6286 standard op amp (80 dB).

DS00001767A-page 8  2014 Microchip Technology Inc.

 AN1767
PCB TIPS AND TRICKS FOR EMI The following guidelines must be observed in order to
eliminate or reduce noise caused by the conduction
Normal mode EMI propagates via unintentional loop path sharing of impedances or common impedance
antennas developed within circuits. The amount of noise:
current, EMI frequency and loop area determine the
1. Decouple the op amp power leads at low
antenna’s effectiveness. The EMI induced current is
frequency and high frequency.
proportional to the loop area. The majority of
Common-mode EMI originates from capacitively 2. Reduce common impedance.
coupled (conducted) Normal mode EMI. The higher the 3. Eliminate shared paths.
frequency of the parasitic signal, the greater the 4. Use low-impedance electrolytic (low frequency)
coupling between the adjacent conductors on the PCB. and local low inductance (high frequency)
Thus, the adjacent conductors may act as antennas. bypasses.
PCB traces and wiring that contain the loop currents 5. Use ground and power planes.
may act as antennas and couple EMI/RFI in or out of 6. Optimize system design.
circuits. Balanced lines and balanced PCB signal
traces may be utilized to help prevent Common-mode
EMI, conducted or induced, from being converted to a
differential signal. If the circuit following the line exhibits
Common-mode Rejection (CMR) at the EMI frequency,
the Common-mode EMI will be canceled to the extent
of the available CMR. The balanced line consists of two
identical and separated conductors, equidistant from
each other, and having consistent dielectric character-
istics such that their impedance is identical and the EMI
voltage/current is the same for each conductor.
In an unbalanced line circuit, each non-identical
conductor sees a different electrical environment when
exposed to the Common-mode EMI. The impedance to
ground for each conductor is different and the voltage FIGURE 22: Continuous Ground Plane
developed between them is different. When the EMI and Short Current Loop – Recommended Layout.
reaches the circuit following the line, it appears as a
differential voltage. If an active circuit is used and has
sufficient bandwidth, it may amplify the EMI and pass it
on to the signal path that follows.
There is a capacitance between any two conductors
separated by a dielectric (air and vacuum, as well as all
solid or liquid insulators, are dielectrics). If there is a
change of voltage on one conductor, there will be a
change of charge on the other and a displacement
current will flow in the dielectric.
If changing magnetic flux from current flowing in one
circuit couples into another circuit, it will induce an
Electromagnetic Field (EMF) in the second circuit.
Such mutual inductance can be a troublesome source FIGURE 23: Discontinuous Ground Plane
of noise coupling from circuits with high dI/dT values. and Large Current Loop – Not Recommended
Layout.

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AN1767
In some applications where low-level signals encounter MEASURING THE EMIRR
high levels of common impedance noise, it is not
possible to prevent interference and the system
Measuring Output Offset Voltage
architecture may need to be changed. Possible
changes include: The MCP6421 EMIRR evaluation board is used to
• Transmitting signals in differential form demonstrate the EMI rejection performances of the
MCP6421 op amp. To this effect, use the setup in
• Amplifying signals to higher levels for improved
Figure 24.
Signal-to-Noise Ratio (SNR)
• Converting signals into currents for transmission The power supply voltage must be within the allowed
range for the op amp. The op amp is biased by a 50Ω
• Converting signals directly into digital form
transmission line, RC snubbers and LC Low-Pass Filter
Crosstalk is the second most common form of to reject high-frequency power supply noise.
interference. In the vicinity of the noise source, i.e.,
A high-frequency signal generator is used to apply
near-field interference is not transmitted as an
input signal to the op amp, and control the amplitude
electromagnetic wave and the term, crosstalk, may
and frequency. The amplitude at the op amp’s input is
apply to either inductively or capacitively coupled
different from the initial RF voltage amplitude because
signals.
of impedance mismatches caused by PCB traces and
Capacitively coupled noise may be reduced by reducing connectors. These multiple impedance mismatches
the coupling capacity (by increasing conductor separa- generate reflections along the signal path, changing
tion), but it is most easily cured by shielding. A conductive the amplitude of the input signal.
and grounded shield (known as a Faraday shield)
These reflections can be avoided or minimized by
between the signal source and the affected node will
carefully matching the op amp’s input to a single
eliminate this noise by routing the displacement current
generator output impedance of 50. The op amp input
directly to ground.
impedance will never perfectly match the output
With the use of such shields, it is important to note that impedance of the signal generator. At low frequencies,
it is always essential that a Faraday shield be the op amp’s input is matched using two 50 resistors
grounded. A floating or open-circuit shield almost in parallel.
invariably increases capacitively coupled noise.
The op amp’s DC output offset voltage that results from
RF signal rectification is measured with a multimeter. A
Low-Pass Filter (LPF) is connected at the op amp
output in order to prevent the EMI signal from entering
into the multimeter, because EMI can be present at the
op amp output due to the feedback network. To
separate inherent offset voltage from offset voltage
produced by EMI, two measurements are taken. For
the first measurement, the signal generator is off and
only inherent offset voltage is present at the op amp
output. For the second measurement, an RF input
signal is applied on the input pin of the op amp, and as
a result of the rectification process, inherent offset
voltage plus the EMI-related offset voltage appear at
the output. The difference between these two results
represents the offset voltage shift given by the op amp’s
rectification.

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 AN1767

Signal Generator (50Ω )

MCP6421 EMIRR Evaluation Board

SMA Cable (50Ω)

Digital Multimeter (10 GΩ)

LPF
DUT (high input impedance,
dependent on frequency)

FIGURE 24: EMIRR Characterization Setup for Op Amps.

CONCLUSIONS REFERENCES
EMI is a real problem today and it can affect most MCP6H04 User’s Guide – “MCP6H04 Evaluation
electronic devices, including medical and avionics Board User’s Guide” (DS52005), Microchip Technology
equipment. Modern devices include EMI filters to Inc., 2011
ensure the proper operation of equipment in harsh EMI MCP6421 User’s Guide – “MCP6421 Electromagnetic
environments. Interference Rejection Ratio Evaluation Board User’s
This application note demonstrates that the Guide” (DS50002175), Microchip Technology Inc.,
EMI-hardened op amps are more efficient in rejecting 2013
high-frequency EMI than standard op amps. It also
shows how standard op amps can reject EMI using
external filters.
Several examples have been used to demonstrate the
EMI performance of Microchip amplifiers, and to
discuss how EMIRR is measured and characterized.

 2014 Microchip Technology Inc. DS00001767A-page 11

AN1767
NOTES:

DS00001767A-page 12  2014 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
ensure that your application meets with your specifications.
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
Incorporated in the U.S.A. and other countries.
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions
QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology
FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A.
arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of
devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries.
the buyer’s risk, and the buyer agrees to defend, indemnify and
Analog-for-the-Digital Age, Application Maestro, BodyCom,
hold harmless Microchip from any and all damages, claims,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
suits, or expenses resulting from such use. No licenses are
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
conveyed, implicitly or otherwise, under any Microchip
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
intellectual property rights.
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2014, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-63276-331-0

QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures

== ISO/TS 16949 ==
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2014 Microchip Technology Inc. DS00001767A-page 13

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03/25/14
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DS00001767A-page 14  2014 Microchip Technology Inc.