CIRCUIT APPLICATIONS OF CNFETs

Presented by:

Natasha Collier (Alabama A&M University)

Rand Jean (Morgan State University)
Saleem Kala (National Polytechnic Institute of Toulouse)
Patrick Ndai (Washington State University)

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 MOSFET Structure

Metal

Oxide
(SiO2)

Semiconductor

Structure of a MOS Field Effect Transistor

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 MOSFET Structure

Channel

Id
q
Id

MOSFET under bias

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 CNFET Structure

Capacitance = 17 pF/m
Diameter = 3 nm
Length = 10 nm

Carbon Nanotube

Structure of a Carbon Nanotube Field Effect Transistor (CNFET)

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 CNFET Structure

Id

CNFET under bias

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 SPICE Model of the Ballistic CNFET

Arijit Raychowdhury et al., ‘Modeling of Carbon Nanotube Field Effect Transistors for
Efficient Circuit Simulation’, IEEE Trans. Nano., to be published.
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 DC characteristics of the CNFET compared to MOSFET
Id (A/micron)

Vd (Volts) Id (A/micron) Vd (Volts)

Id v. Vd characteristic of a CNFET Id v. Vd characteristic of a 65-nm MOSFET

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 DC characteristics of the CNFET compared to MOSFET
Id (A/micron)

Vg (Volts) Id (A/micron) Vg (Volts)

Id v. Vg characteristic of a CNFET Id v. Vg characteristic of a 65-nm MOSFET

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DC characteristics of the CNFET compared to MOSFET

Capacitance (Farad)
Accumulation Depletion Inversion

Vg (Volts) Vg (Volts)

Capacitance v. Gate Voltage

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 Ring Oscillator

•Inverter
DC characteristic of the CNFET inverter

Output Voltage

Input Voltage

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 Ring Oscillator

1
0 01 1
0 1
0

1 1

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 Ring Oscillator

Voltage (Volts)
Voltage (Volts)

Time(s) Time(s)

CNFET ring oscillator: MOSFET ring oscillator:

frequency = 3.5 THz frequency = 1.74 GHz

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 Ring Oscillator
Frequency v/s Interconnect Capacitance
CNFET MOSFET

1.00E+13

1.00E+12

1.00E+11

1.00E+10

1.00E+09
CN
FE
T 1.00E+08
MO
Frequency (Hz)

SF 1.00E+07
ET
1.00E+06

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00
1.00E-20 1.00E-18 1.00E-16 1.00E-14 1.00E-12 1.00E-10 1.00E-08 1.00E-06 1.00E-04
1.00E-01

Capacitance (Farad)

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Electrical Characteristics of 65-nm MOSFETs in
super-threshold regime (VDD=1V)

• ID vs VD and ID vs VG Curve
• Schematics, DC, and Transient Analysis:
1. Inverter
2. Nand
3. Xor
4. Full Adder
5. Four-bit Ripple Carry Adder

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 65 nm MOSFET ID vs VG Curve
Drain Current (A)

Super-threshold

Gate Voltage (V)

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 65-nm MOSFET ID vs VD Curve
Drain Current (A)

Drain Voltage (V)

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 Inverter Properties:
(I) Schematics

Symbol

Truth Table
A Output
0 1
1 0

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 (II) Voltage Transfer Curve

Output Voltage (V)

Input Voltage (V)

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 (III) Inverter Gate Delay

Voltage (V)

Time (s)

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 Nand Properties
(I) Schematics

Symbol

Truth Table
A B Output
0 0 1
0 1 1
1 0 1
1 1 0

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 (II) Nand Logic
Voltage (V)

Time (s)

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 (III) Nand Gate Delay

Voltage (V)

Time (s)

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 Xor Properties
(I) Schematics

Symbol

Truth Table
A B Output
0 0 0
0 1 1
1 0 1
1 1 0

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 (II) Xor Logic

Voltage (V)

Time (s)

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 (III) Xor Gate Delay
Voltage (V)

Time (s)

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 Full Adder Properties
(I) Schematics
Symbol

Truth Table
A B C in Sum C out
0 0 0 0 0
0 0 1 1 0
0 1 0 1 0
0 1 1 0 1
1 0 0 1 0
1 0 1 0 1
1 1 0 0 1
1 1 1 1 1

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 (II) Full Adder Delays

Voltage (V)

Time (s)

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Four-bit Ripple Carry Adder Properties

(I) Schematics

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 (II) Four-Bit Ripple Carry Adder Delays:
Voltage (V)

Time (s)

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 CIRCUIT APPLICATIONS OF CNFETs

Introduction
•CNFETs in Digital Design
•Logic Gates: NAND, XOR, INVERTER
•Full Adder
•4 Bit Ripple-Carry Adder

• Circuit Delays & Power

• Performance comparison

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 CIRCUIT APPLICATIONS OF MOSFETs
Conclusion

•Operating frequency of full adder = 4.8 GHz

• Power-delay product of full adder = 3.56 e-16 J
• Operating frequency of four-bit ripple carry adder
= 4.7 GHz
• Power-delay product of four bit ripple carry adder
= 2.06 e-15 J

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 CIRCUIT APPLICATIONS OF CNFETs

Inverter NAND XOR

Input Output Input Output Input Output

0 1 00 1 00 0
1 0 01 1 01 1
10 1 10 1
11 0 11 0

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 CIRCUIT APPLICATIONS OF CNFETs

Full Adder Design (36 transistors)

1 0 0
1 1
1 1 1
1
1 1 1
0
1 1
1 1
1 1 1
0
0 1
1

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CIRCUIT APPLICATIONS OF CNFETs
Delay

50% Delay

90% Delay

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 CIRCUIT APPLICATIONS OF CNFETs

Full Adder Operation

•Delay (50 % delay) = 0.8ps

• Average Power = 4µW

• 10-90 % Delay = 1.3ps

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 CIRCUIT APPLICATIONS OF CNFETs
Full Adder Output
B = 1, Cin = 0, A changing from 1 to 0.

Sum

Cout

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 CIRCUIT APPLICATIONS OF CNFETs

4 Bit Ripple Carry Adder Operation

•Add two 4-bit numbers
•Result = 4 bit Sum & Carry Out
•Maximum Delay = 1.7ps

•Average Power =11µW

•Total 10-90% delay time = 4ps

•Thus CLK frequency = 250GHz

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 CIRCUIT APPLICATIONS OF CNFETs
Carry Out Bits Sum Bits

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 CIRCUIT APPLICATIONS OF CNFETs
CNFET DEVICES
Component Delay (s) Power (W) PDP (J)
Full Adder 0.8ps 4 µW 3.20e-18

4-bit RCA 1.7ps 11 µW 1.87e-17

MOSFET DEVICES

Component Delay (s) Power (W) PDP (J)

Full Adder 102ps 4.8 µW 4.9 e-16

4-bit RCA 139ps 29 µW 4.03 e-15

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MOSFETs vs. CNFETs
In
Subthreshold Region

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 Subthreshold Voltage in MOSFETs

• Region on MOSFET I-V

characteristics where Vgs is below
threshold voltage
• Current in the channel flows by
diffusion
Sub-Threshold
• Transistor turns off abruptly when
Vgs reduces to Vth (nMOS) Region
• Transistor turns off gradually (real)

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MOSFET Inverter at Vsub

0.9V

0.7V

Threshold Voltage

0.3V
Sub-threshold

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 CNFET Inverter

0.5 V

Threshold voltage
0.3 V

Sub-threshold region
0.15 V

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Sub-threshold MOSFET Ring Oscillator

Frequency at super-threshold
= 1.74 GHz
Frequency at sub-threshold
= 0.267 GHz

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Sub-threshold CNFET Ring Oscillator

Frequency at super-threshold
= 3.5 THz
Frequency at sub-threshold
= 2.24 THz

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 Frequency v. Interconnect Capacitance at subthreshold
MOSFET CNFET
1.00E+13

1.00E+12

1.00E+11

1.00E+10

1.00E+09
Frequency (Hz)

CN 1.00E+08
FE
T
1.00E+07
MO
SF
ET 1.00E+06

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00
1.00E-18 1.00E-17 1.00E-16 1.00E-15 1.00E-14 1.00E-13 1.00E-12 1.00E-11 1.00E-10 1.00E-09 1.00E-08 1.00E-07 1.00E-06

Capacitance (Farad)

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 Frequency v. Interconnect Capacities
MOSFET (Super) MOSFET (Sub) CNFET (Super) CNFET (Sub)

1.00E+13

1.00E+12

1.00E+11

1.00E+10

1.00E+09
Frequency (Hz)

CN
FE 1.00E+08
T(
sup
CN er)
MO FET ( 1.00E+07
SF s
ET ub)
MO (su 1.00E+06
SF per
ET )
(su 1.00E+05
b)

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00
1.00E-18 1.00E-17 1.00E-16 1.00E-15 1.00E-14 1.00E-13 1.00E-12 1.00E-11 1.00E-10 1.00E-09 1.00E-08 1.00E-07 1.00E-06 1.00E-05

Capacitance (Farads)
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 MOSFET Full adder at Sub-threshold

Voltage (Volts)

Time (s)

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 CNFET Full adder at Sub-Threshold

Voltage (Volts)

Time (s)

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 MOSFET 4-bit Ripple Carry
Voltage (Volts)

Time (s)

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 CNFET 4-bit Ripple Carry

Voltage (Volts)

Time (ns)

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 MOSFETs v. CNFETs
MOSFET Circuit Results
Operation Delay Power PDP
Component (second) (Watts) (Joules)
Full Adder Superthreshold 103.8 p 3.44 u 3.56e-16

Subthreshold 6.01 n 31 n 1.9e--16

1.9e

4-Bit RCA Superthreshold 106 p 19.4 u 2.06e--15

2.06e
Subthreshold 6.232 n 74.75 n 0.47e--15
0.47e
CNFET Circuit Results

Component Operation Delay Power PDP

(second) (Watts) (Joules)
Full Adder Superthreshold 0.8p 4u 3.2e-18

Subthreshold 0.54 p 21 n 1.13e-20

4-Bit RCA Superthreshold 1.7p 11u 1.87e-17

Subthreshold 14.1 p 98.51 n 1.38e-18

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 CIRCUIT APPLICATIONS OF CNFETs

§ Conclusion
Speed
Power Consumption
Further studies

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 CIRCUIT APPLICATIONS OF CNFETs

Acknowledgements

§ Professor David Janes

§ Professor Cheng-Kok Koh
§ Professor Kaushik Roy
§ Professor Jim Eaton
§ Arijit Raychowdury
§ Min C. Chai

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