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Small Signal PNP Transistor: Applications SOT-23

The BC857B is a small signal PNP transistor designed for surface mounting in portable equipment, featuring high gain and low saturation voltage. It has a maximum collector current of -100 mA and operates within a temperature range of -65 to 150 °C. The transistor is packaged in a miniature SOT-23 plastic case and is suitable for various electronic applications.

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18 views4 pages

Small Signal PNP Transistor: Applications SOT-23

The BC857B is a small signal PNP transistor designed for surface mounting in portable equipment, featuring high gain and low saturation voltage. It has a maximum collector current of -100 mA and operates within a temperature range of -65 to 150 °C. The transistor is packaged in a miniature SOT-23 plastic case and is suitable for various electronic applications.

Uploaded by

elreyrjdl
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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® BC857B

SMALL SIGNAL PNP TRANSISTOR


PRELIMINARY DATA

Type Marking
BC857B 3F

■ SILICON EPITAXIAL PLANAR PNP


TRANSISTOR
■ MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COMPLEMENTARY TYPE IS
BC847B

APPLICATIONS
■ WELL SUITABLE FOR PORTABLE SOT-23
EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH

HIGH GAIN AND LOW SATURATION


VOLTAGE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) -50 V
V CEO Collector-Emitter Voltage (I B = 0) -45 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -100 mA
I CM Collector Peak Current -200 mA
P tot Total Dissipation at T C = 25 o C 250 mW
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

June 2002 1/4


BC857B

THERMAL DATA

R thj-amb • Thermal Resistance Junction-Ambient Max 500 o


C/W
• Device mounted on a PCB area of 1 cm . 2

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = -30 V -1 -15 nA
Current (I E = 0) V CB = -30 V T C = 150 o C -5 µA
I EBO Emitter Cut-off Current V EB = -5 V -100 nA
(I C = 0)
V (BR)CBO Collector-Base I C = -10 µA -50 V
Breakdown Voltage
(I E = 0)
V (BR)CEO ∗ Collector-Emitter I C = -2 mA -45 V
Breakdown Voltage
(I B = 0)
V (BR)EBO Emitter-Base I E = -10 µA -5 V
Breakdown Voltage
(I C = 0)
V CE(sat) ∗ Collector-Emitter I C = -10 mA I B = -0.5 mA -0.07 -0.3 V
Saturation Voltage I C = -100 mA I B = -5 mA -0.25 -0.65 V
V BE(sat) ∗ Base-Emitter I C = -10 mA I B = -0.5 mA -0.7 V
Saturation Voltage I C = -100 mA I B = -5 mA -0.85 V
V BE(on) ∗ Base-Emitter On I C = -2 mA V CE = -5 V -0.6 -0.65 -0.75 V
Voltage I C = -10 mA V CE = -5 V -0.82 V
h FE DC Current Gain I C = -2 mA V CE = -5 V 220 475
fT Transition Frequency I C = -10 mA V CE = -5 V f = 100MHz 100 MHz
C CBO Collector-Base IE = 0 V CB = -10 V f = 1 MHz 4.5 pF
Capacitance
NF Noise Figure V CE = -5 V I C = -0.2 mA f = 1KHz 2 10 dB
∆f = 200 Hz R G = 2 KΩ
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

2/4
BC857B

SOT-23 MECHANICAL DATA

mm mils
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 0.85 1.1 33.4 43.3

B 0.65 0.95 25.6 37.4

C 1.20 1.4 47.2 55.1

D 2.80 3 110.2 118

E 0.95 1.05 37.4 41.3

F 1.9 2.05 74.8 80.7

G 2.1 2.5 82.6 98.4

H 0.38 0.48 14.9 18.8

L 0.3 0.6 11.8 23.6

M 0 0.1 0 3.9

N 0.3 0.65 11.8 25.6

O 0.09 0.17 3.5 6.7

0044616/B

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BC857B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved


STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

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