0% found this document useful (0 votes)
15 views8 pages

Mos1 Const. Opera.

Lecture 7 covers the construction, types, symbols, and operation of MOS transistors (MOSFETs), specifically focusing on n-channel MOS (nMOS). It details the structure of the MOS transistor, including the p-type substrate and n-type layers, as well as the operation principles such as the creation of a conducting channel and the concept of threshold voltage. The lecture also includes a quiz link for further assessment.

Uploaded by

adwaitdubey14
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
15 views8 pages

Mos1 Const. Opera.

Lecture 7 covers the construction, types, symbols, and operation of MOS transistors (MOSFETs), specifically focusing on n-channel MOS (nMOS). It details the structure of the MOS transistor, including the p-type substrate and n-type layers, as well as the operation principles such as the creation of a conducting channel and the concept of threshold voltage. The lecture also includes a quiz link for further assessment.

Uploaded by

adwaitdubey14
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

EI-27003: Electronics Devices and Circuits

Lecture - 7

Subject Incharge: Mr. Rajesh Khatri


Associate Professor

LECTURE - 7

Year: 2020-21
Unit – 4 : MOS Transistor
 Today’s class:
1. Construction
2. Types and symbols
3. Operation-1
Construction:
MOS Transistor also called as MOSFET stands for:
Metal Oxide Semiconductor Field Effect Transistor
O

OOoo
MOS Construction
 MOS consists of p-type substrate/body
 In it two n-type semiconductor layers
are alloyed as shown in fig.
 Over the substrate and between two
n-type layers, a layer of Oxide(SiO2)
is deposited as shown in fig.
 A thin layer of Metal is deposited over this SiO2 layer.
 Contacts are taken out from this metal layer and from two
n-layers as well as from substrate/body.
 These contacts are Source (S), Drain (D), Gate (G) and
Body (B) as shown in fig.
 Such type of MOS transistor is called as n-channel MOS
or simply nMOS.
MOS Transistor – Symbols & 3D view
 Symbols:

Now instead of metal polysilicon is used at gate.

OR
Operation – 1 (NMOS)
 Some important points:
 Body of NMOS is always connected to ground/most negative.
 In NMOS drain (D) is connected to +ve terminal of battery and source (S) is
connected to ground. (VDS)
 In NMOS Gate (G) is connected to +ve terminal of battery w.r.t. source (S)
(VGS)

 Operation with No gate voltage


With NO bias voltage applied to Gate(VGS=0),
two back to back diodes exist in series between
drain and source.
One is n+ drain and p-type substrate and other is
n+ source and p-type substrate.
These back to back diodes prevent current conduction from drain to source
when voltage VDS is applied.
Operation – 1 (NMOS)
 Creating channel for current flow.
 Consider fig shown.
 Here source and drain are grounded and +ve
voltage is applied to the gate (VGS).
 The +ve voltage on gate causes the free holes
to be repelled from region of substrate under
the gate. These holes are pushed downward
into substrate, leaving behind a carrier depletion region.
 Also, the +ve gate voltage attracts electrons from the n+ source and drain
regions just below oxide layer. When sufficient number of electrons
accumulate near the surface of substrate under gate, an n region is in effect
created, connecting source and drain regions.
 Now if voltage is applied between drain and source (VDS) , current flows
through this induced n region called as n-channel.
 Note that n-channel is formed in p-substrate i.e. inverting substrate from p
type to n type, this channel is called as inversion layer.
Operation – 1 (NMOS)
 Threshold Voltage: The value of VGS at which a sufficient
number of mobile electrons accumulate in the channel
region to form a conducting channel is called as threshold
voltage and is denoted as Vt

 Vt for n channel MOS is positive and is controlled during


device fabrication and is typically in range of 0.5v to 1v.
Time for Quiz

https://forms.gle/JpQTS2qpQDbKvamE7

You might also like