EI-27003: Electronics Devices and Circuits
Lecture - 7
Subject Incharge: Mr. Rajesh Khatri
Associate Professor
LECTURE - 7
Year: 2020-21
Unit – 4 : MOS Transistor
Today’s class:
1. Construction
2. Types and symbols
3. Operation-1
Construction:
MOS Transistor also called as MOSFET stands for:
Metal Oxide Semiconductor Field Effect Transistor
O
OOoo
MOS Construction
MOS consists of p-type substrate/body
In it two n-type semiconductor layers
are alloyed as shown in fig.
Over the substrate and between two
n-type layers, a layer of Oxide(SiO2)
is deposited as shown in fig.
A thin layer of Metal is deposited over this SiO2 layer.
Contacts are taken out from this metal layer and from two
n-layers as well as from substrate/body.
These contacts are Source (S), Drain (D), Gate (G) and
Body (B) as shown in fig.
Such type of MOS transistor is called as n-channel MOS
or simply nMOS.
MOS Transistor – Symbols & 3D view
Symbols:
Now instead of metal polysilicon is used at gate.
OR
Operation – 1 (NMOS)
Some important points:
Body of NMOS is always connected to ground/most negative.
In NMOS drain (D) is connected to +ve terminal of battery and source (S) is
connected to ground. (VDS)
In NMOS Gate (G) is connected to +ve terminal of battery w.r.t. source (S)
(VGS)
Operation with No gate voltage
With NO bias voltage applied to Gate(VGS=0),
two back to back diodes exist in series between
drain and source.
One is n+ drain and p-type substrate and other is
n+ source and p-type substrate.
These back to back diodes prevent current conduction from drain to source
when voltage VDS is applied.
Operation – 1 (NMOS)
Creating channel for current flow.
Consider fig shown.
Here source and drain are grounded and +ve
voltage is applied to the gate (VGS).
The +ve voltage on gate causes the free holes
to be repelled from region of substrate under
the gate. These holes are pushed downward
into substrate, leaving behind a carrier depletion region.
Also, the +ve gate voltage attracts electrons from the n+ source and drain
regions just below oxide layer. When sufficient number of electrons
accumulate near the surface of substrate under gate, an n region is in effect
created, connecting source and drain regions.
Now if voltage is applied between drain and source (VDS) , current flows
through this induced n region called as n-channel.
Note that n-channel is formed in p-substrate i.e. inverting substrate from p
type to n type, this channel is called as inversion layer.
Operation – 1 (NMOS)
Threshold Voltage: The value of VGS at which a sufficient
number of mobile electrons accumulate in the channel
region to form a conducting channel is called as threshold
voltage and is denoted as Vt
Vt for n channel MOS is positive and is controlled during
device fabrication and is typically in range of 0.5v to 1v.
Time for Quiz
https://forms.gle/JpQTS2qpQDbKvamE7
