PROGRAM: B. TECH.

FIRST YEAR (SESSION-2024-25)

COURSE: C1UD124B SEMICONDUCTOR AND OPTOELECTRONIC DEVICES

Due date : ( 10.01.2025 to 26.01.2025 ) Note: Dear students solve all questions of
Assignment-3 and submit/ upload the solution on GULMS on or before 26.01.2025

S.No. QUESTIONS /ASSIGNMENT-1

1 Describe photon interaction processes with matter. Differentiate among them in brief. plot energy
level diagram of three level laser and explain the terms population inversion. Illustrate how
stimulated emission contributes to the laser's operational efficiency and coherence.
2 Explain how an increase in hole concentration affects the semiconductor’s conductivity. Analyze the
variation of Fermi energy level in N-type and P-type semiconductor by changing temperature.
3 Discuss coherence phenomenon. Differentiate between temporal coherence and spatial coherence
write the importance of resonant cavity for laser production
4 Write Fermi function, Interpret the effects of temperature on the Fermi level in p-type and n-type
semiconductors, If the value of Fermi function for a certain energy level is 0.65. Find the percentage
of probability that this energy level is not occupied by the electron. In an intrinsic semiconductor, the
conduction band edge is located at Ec=1.42 eV and the valence band edge is located at Ev=0.82 eV.
If the temperature is 300 K, calculate the position of the Fermi level.
5 Calculate the occupation probability of a state at energy equal to the Fermi energy for a system at
temperature T. Apply the Fermi-Dirac distribution function to calculate the probability of occupying
the energy state of an electron above the 0.1 eV of Fermi energy at 300K.
6 Explain radiative recombination in LED? Describe the working of light emitting diode with its energy
band diagram. In a LED, the semiconductor material has band gap of 1.3 eV. Calculate the
wavelength of light emitted by the LED. Write two drawbacks of Light emitting diodes
7 How many independent current mechanisms are possible in a semiconductor? For an n-type
semiconductor, Write the relation between intrinsic Fermi-level and the new Fermi-level? Identify
the types of charges present at the boundary of the depletion region in a PN junction when no
external voltage is applied. List and explain the key factors that influence the width of the depletion
region in a PN junction.
8 Analyze the process of absorption, spontaneous emission and stimulated emission for the production
of LASER. How many levels are in He-Ne laser? Describe the production of laser light by He-Ne gas
laser with schematic diagram and energy level transition. Explain the method of population
inversion in He-Ne laser,
9 Discuss how the uncertainty principle constrains the possible orbits of electrons in the atom and
contributes to the concept of quantized energy levels.
10 Draw a forward bias circuit diagram for a P-N junction diode by connecting voltmeter and ammeter.
Also calculate the source voltage if 2 mA current is flowing the circuit and 0.76 V is developed across
the diode.
11 Sketch the graph for effective mass and energy with wave vector k of an electron is moving in a
periodic potential.
12 The ideal current (short circuit) and ideal voltage (open circuit) in a solar cell are 82mA and 12 V,
respectively. The maximum current and voltage drawn from the solar cell are 45mA and 8.0 V.
Determine the fill factor and efficiency of the solar cell if total optical power incident on the solar
 surface is 500 mW.
13 Compare between avalanche and zener breakdown of a P-N junction diode and sketch the zener
characteristics at two different zener voltages.
14 Draw the experimental diagram of Hall effect. In Hall experiment, the current flowing in x-direction is
3mA and the applied magnetic field along z- direction is 0.08 Tesla. Find the Hall voltage if the
thickness of the semiconductor sample is 0.5 mm and Hall coefficient is 0.024 m3/C.
15 Identify and contrast the main characteristics of coherent light and incoherent light in terms of their
phase relationship, frequency, directionality, and interference patterns.
16 Using band diagrams, explain how electronic and optical properties are affected in direct and indirect
band gap semiconductors. Provide examples of each type
17 Explain the concept of quantum tunneling and discuss its importance in the field of electronic
devices. Using a conceptual diagram, abstractly describe the different imaging modes of a scanning
tunneling microscope, emphasizing their theoretical functions and applications.
18 Sketch and explain the energy band diagram of an intrinsic semiconductor. Identify and label the
Fermi level, valence band, and conduction band. How does the Fermi level position relate to the
conduction and valence bands in an intrinsic semiconductor?
19 Analyze the impact of semiconductor technology on the healthcare industry, particularly focusing on
diagnostics and medical devices and role of semiconductor technology in the advancement of
modern telecommunications. Discuss the role of semiconductors in advancing AI and ML
technologies and discuss their impact on the development and performance of these fields.
20 Describe how a photodiode sensor operates in practical terms. Explain what dark current is in the
context of a photodiode sensor. Provide an illustration of the IV (current-voltage) characteristics to
highlight its significance and effects on sensor performance. How does the reverse bias voltage affect
the operation of a photodiode? Explain it with using diagram.
21 Explain the factors that influence the width of the depletion region in a PN junction. Analyze how the
Fermi level shifts in a semiconductor when it is doped with a donor or an acceptor impurity. Include
diagrams showing the shift in Fermi level for both n-type and p-type doping.
22 Explain how the electric field in the depletion region prevents further diffusion of charge carriers
across the junction. Explain the behavior of Fermi level with increasing acceptor concentration in p-
type semiconductor. Describe the formation of a P-N junction diode, including the steps involved and
the characteristics of p-type and n-type materials.