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Basu 2012

The article discusses the development of microelectromechanical system (MEMS) cantilever-based frequency doublers, which utilize the inherent square-law nonlinearity of capacitive transducers for frequency doubling of input signals. Experimental results demonstrate successful frequency doubling for input signals ranging from 500 kHz to 1 MHz and 227.5 kHz to 455 kHz, showcasing the potential of these devices for high-frequency signal processing applications. The cantilevers were fabricated using polysilicon and tested with laser Doppler vibrometry, yielding results that align with analytical and simulation predictions.

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0% found this document useful (0 votes)
5 views8 pages

Basu 2012

The article discusses the development of microelectromechanical system (MEMS) cantilever-based frequency doublers, which utilize the inherent square-law nonlinearity of capacitive transducers for frequency doubling of input signals. Experimental results demonstrate successful frequency doubling for input signals ranging from 500 kHz to 1 MHz and 227.5 kHz to 455 kHz, showcasing the potential of these devices for high-frequency signal processing applications. The cantilevers were fabricated using polysilicon and tested with laser Doppler vibrometry, yielding results that align with analytical and simulation predictions.

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shivanku
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© © All Rights Reserved
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Journal of Intelligent Material Systems and

Structures
http://jim.sagepub.com/

Microelectromechanical system cantilever-based frequency doublers


Joydeep Basu and Tarun K Bhattacharyya
Journal of Intelligent Material Systems and Structures published online 9 October 2012
DOI: 10.1177/1045389X12461695

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Article

Journal of Intelligent Material Systems


and Structures
0(0) 1–7
Microelectromechanical system Ó The Author(s) 2012
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DOI: 10.1177/1045389X12461695
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Joydeep Basu1,2 and Tarun K Bhattacharyya1

Abstract
Microelectromechanical system based on-chip resonators offer great potential for high-frequency signal processing cir-
cuits such as reference oscillators and filters. This is due to their exceptional features such as small size, large
frequency–quality factor product, integrability with CMOS integrated circuits, low power consumption, low-cost batch
fabrication, and so on. A capacitively transduced cantilever beam resonator is one such popular microelectromechanical
resonator topology. In this article, the inherent square-law nonlinearity of the voltage-to-force transfer function of a can-
tilever resonator’s capacitive transducer has been employed for the realization of frequency doubling effect. Using this
concept, frequency doubling of input signals of 500 kHz to1 MHz and 227.5 kHz to 455 kHz have been experimentally
demonstrated for two cantilever beams of length 51.75 and 76.75 mm, respectively. The microelectromechanical system
cantilevers have been fabricated with polysilicon using the PolyMUMPs surface micromachining process, and their testing
has been performed using laser Doppler vibrometry. The test results obtained are in reasonable compliance with the
analytical and CoventorWare finite element simulation results. The high efficiency demonstrated by the cantilever fre-
quency doubler makes it a promising choice for signal generation at high frequencies.

Keywords
Cantilever, frequency doubler, laser Doppler vibrometry, microelectromechanical system, radio frequency microelectro-
mechanical system

Introduction technology. The central principle followed for achiev-


ing this lies in the utilization of a nonlinear element for
Over the past few years, microelectromechanical system generating harmonics of an input signal of a particular
(MEMS)–based resonators have emerged as an attractive frequency. Hence, we can generate signals at higher fre-
alternative for quartz crystal resonators for sensing and quencies using this technique. Mainly diode and field-
high-frequency signal processing applications. Some of effect transistor (FET)–based frequency multipliers
their promising aspects include quality factor (Q) values have seen rapid development in the last few decades,
close to that for quartz in both vacuum and air and oper- with the best Schottky diode frequency multiplier of
ating frequencies in the very high frequency (VHF) and today being able to generate signals with frequencies of
ultrahigh frequency (UHF) ranges, low power consump- the order of 1 THz (Camargo, 1998; Faber et al., 1995;
tion, compact size, and the feasibility of monolithic inte- Golio, 2002; Ward et al., 2004). However, all these
gration and fabrication using low-cost Complementary have their intrinsic limitations, with a typical frequency
metal–oxide–semiconductor (CMOS) compatible pro- doubler losing about 70% of the input signal power to
cesses (Basu and Bhattacharyya, 2011b; Nguyen, 2007). heat (Wang et al., 2009). Recently, graphene-based
Micromechanical cantilevers vibrating in flexural modes FETs have been employed for frequency doubling with
are one of the most popular MEMS resonators used in more than 90% converting efficiency (Wang et al.,
various applications of micro- and nanotechnologies of
the present age (Chakraborty and Bhattacharyya, 2010; 1
Department of Electronics and Electrical Communication Engineering,
Lin et al., 2004, 2007). The simplicity of the structure and Indian Institute of Technology Kharagpur, Kharagpur, India
its operation, the ease of fabrication over a wide range of 2
Presently at: Intel Technology India Pvt. Ltd, Bangalore, India
dimensional variations, the ease of excitation and reso-
nance measurements, and the extensively researched ana- Corresponding author:
Joydeep Basu, Department of Electronics and Electrical Communication
lytical background contribute toward this popularity. Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302,
Frequency multiplication has been an indispens- India.
able part of radio frequency (RF) communication Email: [email protected]

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2 Journal of Intelligent Material Systems and Structures 0(0)

Figure 1. (a) Top view and (b) side view of the cantilever resonator.

2009, 2010). However, a maximum generated frequency Also, kn is equal to 1.875 for the first resonance
of only up to 400 kHz has been reported. Therefore, it mode of the beam (i.e. for n = 1). Before explaining its
can be said that the development of frequency doublers frequency doubling operation, we need to start with the
is still a topic of interest, as we need such devices for a concept of a cantilever being used as a resonator for
plethora of applications such as wireless communica- which a dc-bias voltage Vdc should be applied to the
tion and radio astronomy. This article demonstrates beam and an ac-excitation vi should be applied to the
for the first time the potential of MEMS cantilevers for actuation (or input) electrode. Thus, a resultant poten-
usage in frequency doubling application. Due to the tial difference of (Vdc 2 vi) is produced across the input
low-loss attribute (or equivalently, a high Q) offered by transducer comprising the beam and input electrode.
MEMS devices, improved circuit performance can be Due to this applied voltage, an electrostatic force (Fe)
expected from a micromechanical frequency doubler is generated between this electrode and the beam hav-
than semiconductor devices utilized for the same task ing both constant (F0) and time varying (Fi) compo-
(Rebeiz, 2003). The concept proposed in this work can nents, the expression of which can be derived using the
be further extended by using bulk-mode MEMS reso- energy method (Senturia, 2001)
nator geometries, such as a circular-disk resonator  
(Basu and Bhattacharyya, 2011a; Wang et al., 2004) ∂ 1
Fe = Ci (Vdc  vi )2
for the generation of frequencies up to the UHF range. ∂y 2  
1 ∂Ci
= (Vdc  vi )2 = F0 + Fi ð3Þ
2 ∂y
Theory
where Ci(y) denotes the input transducer capacitance.
An electric field–driven micromechanical cantilever The time varying force Fi is given in equation (4),
resonator is one of the most fundamental and widely where only the dominant term (for Vdc .. vi) has been
studied structures in MEMS, which can provide a high retained
Q and narrow band-pass filtering function. The sche-
  "   #
matic diagram of a simple cantilever beam fixed at one
∂Ci ∂ eAi y 1
end is shown in Figure 1. The instantaneous deflection Fi ffi Vdc vi =  Vdc vi 1
∂y ∂y d0 d0
under undamped-free vibration of the beam of length L !
and rectangular cross section with width W and thick- eAi
ffi Vdc vi ð4Þ
ness h, as shown in Figure 1, is governed by the Euler– d20
Bernoulli equation (Bao, 2005)
Here, e is the permittivity of the medium, d0 is the sta-
∂4 y ∂2 y tic electrode-to-beam gap spacing, and Ai is the input
EI 4 + rA 2 = 0 ð1Þ transducer area. Hence, this force acting on the beam
∂x ∂t
has the same frequency as that of input vi. Now, when
Here, y(x,t) is the out-of-plane deflection of the beam the frequency of vi approaches the beam’s resonant fre-
at a distance x from the clamped end at a time instant quency (v1 = 2pf1), the beam begins to vibrate in reso-
t, r and E are the density and Young’s modulus of the nance in a direction perpendicular to the substrate,
beam material, respectively, A is the cross-sectional creating a dc-biased time varying capacitor Co(t)
area, and I is the area moment of inertia of the beam. between the beam and the output electrode. As shown
Solving this equation, the natural frequency of the in equation (5), Co(t) has a fixed and a sinusoidally
beam for nth vibration mode can be determined as varying component
(Bao, 2005; Chakraborty and Bhattacharyya, 2010)
Co (t) = Cfix + Cvar sin (vt) ð5Þ
 0:5  sffiffiffiffi
1 k4n h E
fn = 2
ð2Þ For all input frequencies away from the resonance
2p 12 L r frequency, Co ’ Cfix. However, at resonance, large

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Basu and Bhattacharyya 3

If we assume that the sinusoidal y(t) is given by


y0sin[2p(2fi)t], then io has the following expression

∂Co eAo y0
io = Vdc = Vdc (4pfi ) cos½2p(2fi )t ð8Þ
∂t d20
Hence, the output current has twice the frequency of
the input signal.

Design, simulation, and fabrication


For verifying the concept, two polysilicon cantilever
beams of 2 mm thickness have been designed and fabri-
cated using the PolyMUMPs surface micromachining
technology (Carter et al., 2005), having lengths of 51.75
and 76.75 mm, respectively. These are intended to have
the first resonance mode at 1 MHz and 455 kHz corre-
spondingly (using equation (2)); and hence, they can
Figure 2. (a) Schematic diagram of the cantilever-based double an input signal frequency of 500 kHz to 1 MHz
frequency doubler. (b) First mode shape of the 76.75-mm-long and 227.5 kHz to 455 kHz, respectively. The width has
cantilever beam at 455 kHz. been taken as 10 mm. The beam has been realized using
the Poly1 structural layer of polysilicon having a thick-
ness of 2.0 mm and deposited by low-pressure chemical
deflections of the beam occur with Cvar assuming a sig- vapor deposition (LPCVD). The bottom electrodes
nificant value. Thus, in this condition (i.e. for v = v1), have been patterned in the 500-nm-thick Poly0 layer of
an output motional current io is produced at the output polysilicon. The resulting electrode-to-beam air gap is 2
transducer as given by mm. Electrical connections from the pads to the beam
and I/O-electrodes have also been realized using the
∂Co Poly0 layer. The two cantilever beam resonators have
io = Vdc = Vdc Cvar v cos (vt) ð6Þ
∂t been simulated in CoventorWare finite element method
(FEM)–based simulation software (Basu et al., 2011;
having a frequency of v1. This frequency filtering func-
Coventor, 2008), and modal analyses have been per-
tion justifies the operation as a resonator. The output
formed to determine the mode shapes and the corre-
current can be directed to a load resistor RL, which
sponding modal frequencies. The first vibration mode
provides the proper termination impedance for the
for the 76.75-mm-long beam is at 455 kHz, the simu-
resonator.
lated modal shape for which is shown in Figure 2(b).
Now, for using this cantilever as a frequency doubler
Field-emission scanning electron microscope
rather than a resonator, we need to apply the dc poten-
(FESEM) image of a fabricated cantilever-based fre-
tial (Vdc) also in series with the ac-input excitation (vi) quency doubling device is provided in Figure 3, which
to the input electrode, as illustrated in Figure 2(a). This also illustrates the various material layers utilized in the
is due to the fact that the electrostatic force Fe produced fabrication of the structure.
on the beam is proportional to the square of the voltage
difference between the beam and the input electrode
(from equation (3)), which is here equal to vi. Hence, if Characterization
the frequency of the sinusoidal vi is say, fi, then the force
The two cantilever resonator-based frequency doubling
Fe acts at a frequency of 2fi. Now, if the cantilever is
devices have been electromechanically characterized at
selected to have a resonant frequency (f1) of the same
the wafer level using laser Doppler vibrometry (LDV)
2fi, then the beam vibrates at resonance and we get a
technique by which non-contact vibration measure-
sinusoidal motional current io with a frequency of 2fi
ments of a surface can be made in real time (Polytec,
(using equation (6)) in the load connected at the output
2012; Pandey and Pratap, 2007). LDV uses the princi-
port. Taking Ao and y(t) as the output transducer over-
ple of Doppler frequency shift of backscattered laser
lap area and vertical deflection of the beam from the
light from a moving surface for measuring the compo-
position of rest, respectively, we obtain the following
nent of velocity, which lies along the axis of the laser
  beam. A microscanning laser vibrometer (model:
eAo eAo eAo y(t)
Co (t) = = ffi 1+ Polytec MSV 300) has been utilized for characterizing
d0  y(t) d0 (1  y(t)=d0 ) d0 d0
the frequency response of the designed cantilevers. The
ð7Þ electrical excitation signal generated by the internal

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4 Journal of Intelligent Material Systems and Structures 0(0)

Figure 3. SEM image of the 76.75-mm-long cantilever frequency doubler. The inset shows a close-up view of the tip of the beam.
SEM: scanning electron microscope.

signal generator of the LDV system has been applied confirms the frequency doubling effect of the
between the beam and any one of the two bottom elec- device.
trodes to excite out-of-plane modes in the cantilever.
The verification of the frequency doubling effect has The resonance frequency (f1), quality factor (Q), and
been separately done for each of the cantilevers in two the damping ratio (z) can be obtained from either of the
consecutive steps, by the application of two different vibration velocity/displacement/voltage responses as a
kinds of signals as described below: function of the frequency of the applied signal. The
vibration velocity spectrum for the two cantilever beam
 In the first step, a periodic chirp input signal hav- resonators subjected to periodic chirp input are shown
ing a uniform distribution of energy across a fre- in Figure 4(a) and (b). The measurements have been
quency range from 0 to 2 MHz have been used repeated for various values of the peak amplitude of
for exciting the cantilever. It is like finding the input vi (up to 10 V). The resonance frequency can be
harmonic response of the beam. The device detected as the frequency at which the peak of velocity
responds at all the frequencies. However, it will (or displacement) amplitude occurs in the output spec-
have maximum amplitude of vibration at the fre- trum. Hence, from Figure 4(a) and (b), it can be seen
quencies of resonance, elsewhere; the amplitude that the first mode of vibration is obtained approxi-
will be relatively very small. This helps us in mately at 435 and 960 kHz for the two cantilevers of
finding the resonant frequencies and correspond- length 76.75 and 51.75 mm, respectively. A slight reduc-
ing modal shapes of the flexural vibration modes tion of the fundamental resonance frequency is mainly
within this frequency range. due to squeezed film air damping (Chakraborty and
 In the second step, a sinusoidal voltage of Bhattacharyya, 2010). All the measured spectrums have
frequency equal to half of the first resonance a spike at about 120 kHz due to system-generated noise.
mode frequency (f1, determined in the previous The half-power or 3-dB bandwidth (Df) can be obtained
step) has been applied as the excitation signal. from the difference of frequencies at which the vibra-
As the electrostatic force (Fe) acting on the tion velocity magnitude is 1/O2 times of the peak mag-
cantilever is proportional to the square of the nitude. Using the values of f1 and Df, the quality factor
voltage difference between the beam and the and the damping ratio (Pandey and Pratap, 2007) can
input transducer, hence, this force is produced be determined, respectively, from equations (9) and (10)
at a frequency of f1. This causes the cantilever
f1
beam to vibrate at the first resonance mode. In Q= ð9Þ
Df
this way, out-of-plane deflection has been
excited in the beam at a frequency that is twice 1
Q = pffiffiffiffiffiffiffiffiffiffiffiffiffi ð10Þ
the frequency of the input voltage, which 2z 1  z2

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Basu and Bhattacharyya 5

Figure 4. Velocity spectrums of the (a) 76.75-mm-long and (b) 51.75-mm-long cantilever beams obtained from LDV.
LDV: laser Doppler vibrometry.

Figure 5. The first mode vibrating beam shape for the 51.75-mm-long cantilever beam measured using LDV.
LDV: laser Doppler vibrometry.

Thus, from the spectrum for the 76.75-mm-long can- Poly1 beam has been properly released and is free at
tilever beam, the Q and z have been calculated as 40 the end.
and 0.0125, respectively. Next, a sinusoidal signal of frequency equal to half
The modal shape of the first vibration mode of of the corresponding first mode resonance frequency
each of the cantilevers has also been visualized using has been used. Figure 6(a) shows the vibration velocity
LDV. The one obtained for the 51.75-mm-long canti- spectrum for the beam of length 76.75 mm. Here, the
lever beam is shown in Figure 5. Measured modal resonance peak has been obtained at 454 kHz by using
shape has been found to match with that obtained an input of half of this frequency. Similarly, the output
from FEM simulations. This also shows that the vibration voltage spectrum having a peak at 960 kHz

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6 Journal of Intelligent Material Systems and Structures 0(0)

Figure 6. (a) Velocity spectrum of a 76.75-mm-long cantilever and (b) vibration voltage spectrum of a 51.75-mm-long cantilever
obtained from LDV for input at half the resonance frequency.
LDV: laser Doppler vibrometry.

Table 1. Test results for identical cantilever beams on three separate dies.

Die no. Measured output frequency of cantilever frequency doubler (in kHz)
First cantilever (theoretical f1 = 455) Second cantilever (theoretical f1 = 1000)

1 454 960
2 454 957
3 453 959

for the second beam of length 51.75 mm is provided in been finite element simulated for their mechanical
Figure 6(b). This has been obtained by providing an response. Theory and simulation have been found to
input excitation at 500 kHz, which is half the resonance match quite well. Furthermore, the functionality of the
frequency of this beam. Hence, the frequency doubling frequency-doubling device has been experimentally
effect has been experimentally confirmed. All of the demonstrated using LDV technique for two fabricated
output spectrums have shown high spectral purity. The cantilever beams. The testing has been repeated on
same set of testing has also been repeated for similar devices on multiple dies. The test results have been
devices but present on separate dies. Table 1 presents found to be in reasonable compliance with the esti-
the experimental output frequencies obtained by the mated results. The work reported here can be further
application of sinusoidal input (at half frequency) to continued with various prospects, including the detailed
cantilevers on three such dies. Only a minor variation performance comparison of MEMS frequency doubler
has been observed across the results. with comparable semiconductor versions, and the utili-
zation of high-frequency bulk-mode resonator geome-
tries for frequency-doubling applications.
Conclusion
In this article, MEMS cantilever beam fixed at one end Funding
has been utilized for realizing frequency doubler. The Project on RF-MEMS at IIT Kharagpur was sponsored by
microstructures have been designed and fabricated National Programme on Micro and Smart Systems
using a surface micromachining process and have also (NPMASS), Government of India.

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Basu and Bhattacharyya 7

Acknowledgements Golio M (2002) RF and Microwave Semiconductor Device


The authors would like to thank Professor Rudra Pratap and Handbook. Boca Raton, FL: CRC Press.
his research group in the Department of Mechanical Li M, Tang HX and Roukes ML (2007) Ultra-sensitive
Engineering, and Professor Navakanta Bhat and his research NEMS-based cantilevers for sensing, scanned probe and
group in the Department of Electrical Communication very high-frequency applications. Nature Nanotechnology
Engineering at Indian Institute of Science, Bangalore, for 2: 114–120.
their help in characterizing the devices using their facilities. Lin Y-W, Lee S, Li S-S, et al. (2004) Series-resonant VHF
micromechanical resonator reference oscillators. IEEE
Journal of Solid-State Circuits 39(12): 2477–2491.
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