Jesv6n3 1
Jesv6n3 1
Siddharth Bhat
SRM University
India
[email protected]
Shubham Choudhary
SRM University
India
[email protected]
Jayakumar Selvakumar
SRM University
India
[email protected]
ABSTRACT: This paper presents a pre-amplifier latch based CMOS comparator design. This design is premeditated to be
used as a comparator window. This design is attractive due to its low power dissipation and speed. Preamplifier implies a
cascode structure which stabilizes the output voltage and latch with its regenerative feedback which makes comparison fast
along with detection of small difference between the inputs. The design is simulated in 90-nm CMOS technology using
Cadence EDA software. This design provides a low power of 55 μW with a speed of 55 MHz and supply voltage of 1.2 V.
1. Introduction
Demand for devices with portable battery is increasing rapidly and the crux of matter is low power design methodologies for high
speed applications. This power reduction is achieved by voltage scaling. The voltage scaling results in subthreshold region of
operation and these increasing demands need to meet in results in new architectures and innovative circuits. As we stepfeatures
the performance is affected by process variation. This exists in certain applications like window comparators, analog to digital
converters and others. Comparators are the heart of all these applications. Overall performance of comparator is influenced by
its design [1]. The important function of the comparator is to compare certain values versus the reference value. Preamplifier
based comparators are used for low power design and high speed. The preamplifier stage of comparator improves the sensitivity
of comparator from noise generated by feedback stage[2].The latch stage senses the small difference between the inputs and
Comparators with high performance are required to amplify small inputs to signals with sufficient level to be detected by various
systems [8]. In the proposed design of the comparator as in [1], a fully differential with an enhanced reset architecture using
transmission gates to increase the speed has been used for sample and hold less ADC. A fast comparator with high accuracy is
key element for ADC [9]. Apart from technological amendments, designing new circuits for low voltage operation and shunning
stacking of transistors between the rails is preferred.
In systems designed for testing and fault detection, window comparators are utilized. They are also required to meet the demand
of low power design. The conventional window comparator [4]with voltage hysteresis property operating in noisy conditions
employs comparators along with AND gate. Comparators are the vital elements of many electronic systems and it must be
optimized to achieve higher performance.
Section 2 describes the different stages of comparator, section 3 represents the simulation result of comparator design along
with table of comparison, section 4 discusses window comparator using comparator with some of the results and at last section
5 encloses the paper.
The comparator design is major challenge to meet the requirements according to the technology. The preamplifier based
comparator circuit has been parted into three stages which are preamplifier stage followed by decision circuit stage that is latch
circuit and at last post-amplifier stage.
The drain to source voltage (VDS) of the transistors M3 and M4 is fixed as their drain is connected to source of transistors M1 and
M2 respectively. The biasing voltage selection is an important factor as it affects output. Gain of the feedback loop is high and
can be given as product of transconductance and resistance of transistors involved in feedback loop. The transistors M3, M1
and M7 forms feedback loop which can be seen in fig. 2. The output is thus stabilized. The biasing circuit is used which provides
fixed biasing voltages to transistors M1- M2 and M7-M12.
When input voltages VIN1 and VIN2 are applied then corresponding transistors are turned on. The working of circuit in differential
mode is as follows. When VIN1 is greater than VIN2, if the input voltages are enough to turn in the transistors M5 and M6 then both
the transistors are on and current through M6 is more than M5 so the output IOUT- is obtained which is more than IOUT+. When
Vin2 is greater than Vin1 then IOUT+ is greater than IOUT- .
Fig. 2 shows the schematic design of SR latch. While designing the decision circuit, transistor widths were kept minimum that
is 120 nm to cater for speed. To retain the circuit in self biased condition, the sizes of transistors were adjusted accordingly.
Transistor pair M3, M6 and M4, M7 constitutes the cross-coupled inverter pair structure which act as the main regenerative loop
for the latch. For least capacitive effects their sizes of length and width are kept minimum, and W/L ratio is kept as for an ideal
inverter. To set the metastable trip point of the inverter to half of the supply voltage sizes are further optimized. Input IN1 is
applied on the gate terminals of transistors M1, M5 and IN2 at M2 and M8. Let there be high level voltage at IN1 so transistor M5
will turn driving the output OUT1 to ground. This in turn connected to gate terminal of M4 and M7 gives output OUT2 which is
equal and opposite to OUT1.
amplifiers is handled by voltage at the node connecting source of transistor M4 to gate of transistor M1 and M2. This node
voltage is due to the device pairs M1, M2 and M11, M12 which is stabilized by negative feedback loop employing devices M4, M5,
M8, M9. Utilizing fully differential self-biased amplifiers as output stage gives full swing output without noise and need for
reference voltage is banished [11].
In this section simulation results are presented and the circuit is simulated using 90 nm CMOS technology. We have used full
scale supply voltage of 1.2 V. VREF is 0.6 V and input is ramp signal of 0.9 Vpp.
Fig. 5 shows the DC gain of pre-amplifier of 32 dB. Fig. 6 shows the transient response of comparator design where one input is
a ramp signal and other input is VREF of 0.6 V. The comparator 3.3..design converts the input to square wave of high voltage level
of 1.04 V. The output changes its orientation according to input. When the input is lower than the VREF then output goes to low
level logic, when input is greater than reference voltage the output goes to high level logic. The delay is 18.05 nsec with power
dissipation of 55 μ W.
In digital electronics, for measuring the quality and performance of CMOS circuit power-delay-product (PDP) is a Fig. of merit [6,
7]. It is also termed as switching energy, it is product of consumed power and delay. For calculating PDP we need to calculate
power consumption by the circuit and then the time taken by circuit from the instance of giving input and obtaining output.
Finally these two parameters are multiplied giving PDP. The PDP of this design is 9.92x10-17J.
Speed 55 MHz - - - - -
PDP 0.99 pJ - - - - -
This section describes one of the applications of the comparator. A window comparator circuit consists of one output with two
states that is low state and high state, two inputs indicating the high and low limit. When the input is in between the range VLOW
≤ VIN ≤ VHIGH output is high [4]. The circuit of window comparator has two comparators and one AND gate as shown in fig. 7.
There are many applications but most important is used as the input stage of low power SAR ADC with a bypass window
for medical applications [4]. In fig. 8 shows the transient response of comparator window. The voltage limits are set to 0.8
V and 0.6 V which indicates higher limit and lower limit respectively.
Ramp signal is fed as input so when the input is in between the limiting voltages that is 0.6 £ V Vin £ 0.8 V, we get output
of high level equal to 1.20 V.
Journal of Electronic Systems Volume 6 Number 3 September 2016 77
Figure 8. Transient response of comparator window
5. Conclusion
This paper presents a low power pre-amplifier based CMOS comparator architecture simulated in 90-nm CMOS technology
using cadence tool. The design is based on preamplifier, latch and output buffer. The cascode design of preamplifier provides
a gain of 32 dB with low power consumption of 3.3 μW. The biasing voltage plays vital role in stabilizing the drain voltages which
further fixes output voltage of amplifier. The design is simulated with operating voltage 1.2 V. The comparator achieves the dc
offset voltage of 0.6 mV with a power dissipation of 55 μW, which is useful in low power applications.
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