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Tutorial

The document consists of a tutorial sheet with various questions related to semiconductor physics, including calculations of resistance, carrier concentrations, energy band diagrams, and properties of p-n junctions. It covers topics such as doping, current density, capacitance changes, and BJT operation. Each question requires specific calculations or diagrams based on given parameters and conditions.

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jayawase11
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8 views

Tutorial

The document consists of a tutorial sheet with various questions related to semiconductor physics, including calculations of resistance, carrier concentrations, energy band diagrams, and properties of p-n junctions. It covers topics such as doping, current density, capacitance changes, and BJT operation. Each question requires specific calculations or diagrams based on given parameters and conditions.

Uploaded by

jayawase11
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EC 201: Tutorial sheet

01/09/2024

Q1. An n-type Si bar 0.1 cm long and 100 µm2 in cross-sectional area has a majority carrier
concentration of 5×1020 /m3 and the carrier mobility is 0.13 m2/V-s at 300 K. Find the
resistance of the bar.
Q2.A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole
concentration p0 and electron concentration n0 at 300 K? Where is EF relative to Ei?
Q3. An n-type semiconductor having uniform doping is biased as shown in the figure. Draw
the energy band diagram for the biased n-type semiconductor.

Q4.(a) A Si bar 1 µm long and 100 µm2 in cross-sectional area is doped with 1017 cm-3
phosphorus. Find the current at 300 K with 10 V applied.
(b) How long does it take an average electron to drift 1 µm in pure Si at an electric field
of 100 V/cm? Repeat for 105 V/cm.
Q5. For the below figure, consider a semiconductor bar with w = 0.1 mm, t = 10 µm, and
L = 5 mm. For B = 10 kG in the direction shown (1 kG = 10-5 Wb/cm2) and a current
of 1 mA, we have VAB = -2 mV and VCD = 100 mV. Find the type, concentration, and
mobility of the majority carrier.

Q6. In an n-type semiconductor rectangular bar, if the length of the bar becomes four times
of the original length and doping is decreased by half of its original doping, then how
it will affect the conductivity and current density through the bar if the applied voltage
remains the same?
Q7. Consider a Si sample kept at room temperature having a band gap Eg = 1.12 eV.
(a) If the Fermi level EF is located exactly at the middle of the band gap for this sample,
then what will be the probability of finding an electron at E = EC + 2kT?
(b) If the Fermi level EF is located such that EF = EV, then what will be the probability
of finding an electron at E = EV + kT?
Q8. A hypothetical semiconductor has an intrinsic carrier concentration of 1010/cm3 at 300
K, it has conduction and valence band effective densities of states Nc and Nv, both
equal to 1019/cm3.
(a) What is the band gap Eg?
(b) If the semiconductor is doped with Nd = 1016 donors/cm3, what are the equilibrium
electron and hole concentrations at 300 K?
(c) If the same piece of semiconductor, already having Nd = 1016 donors/cm3, is also
doped with Na = 2×1016 acceptors/cm3, what are the new equilibrium electron and hole
concentrations at 300 K?
(d) Consistent with your answer to part (c), what is the Fermi level position with respect
to the intrinsic Fermi level, EF- Ei?
Q9. An abrupt Si p-n junction has Na = 1018 cm-3 on one side and Nd = 5×1015 cm-3 on the
other.
(a) Calculate the Fermi level positions at 300 K in the p and n regions.
(b) Calculate the depletion width.
(b) Draw an equilibrium band diagram for the junction and determine the built-in
potential V0 from the diagram.
Q10. An abrupt Si p-n junction (A = 10-4 cm2) has the following properties at 300 K:
p-side: 𝑁𝐴 = 1017 𝑐𝑚−3 , 𝜏𝑛 = 0.1 𝜇𝑠, 𝜇𝑝 = 200 𝑐𝑚2 /𝑉𝑠 and n-side: 𝑁𝐷 =
1015 𝑐𝑚−3 , 𝜏𝑝 = 10 𝜇𝑠, 𝜇𝑛 = 1300 𝑐𝑚2 /𝑉𝑠. The junction is forward biased by 0.5 V.
What is the forward current? What is the current at a reverse bias of −0.5 V?
Q11. In a p-n junction, the n-side doping is five times the p-side doping. The intrinsic
carrier concentration = 1011 cm-3 and band gap is 2 eV at 100°C. If the built in junction
potential is 0.65 V, what is the doping on the p side?
Q12. A Si n+p junction has an acceptor doping of 2×1017/cm3 on the p side and cross-
sectional area of 10-2 cm2. If majority carrier lifetime is 10 ns and corresponding
diffusion coefficient is 400 cm2/s, estimate the current density under a reverse bias of
0.3 V at 300 K temperature.
Q13. In a p+n diode reverse biased at 5 V, the generated capacitance is 20 pF. If the
doping of the p side is doubled and the bias is change to 20 V, what will be the change
in capacitance? If now the bias is changed to 100 V, then what will be the change?
Q14. For a BJT, 𝛼 = 0.98, 𝐼𝐶𝐵𝑂 = 0.6 𝜇𝐴. This BJT is connected in common emitter
mode and operated in active region with 𝐼𝐵 = 20 𝜇𝐴. Calculate the collector current.
Q15. Consider two BJTs biased in active region at same collector current with area,
𝐴1 = 0.2𝜇𝑚 × 0.2𝜇𝑚 and 𝐴2 = 300𝜇𝑚 × 300𝜇𝑚. Assuming all other device
parameters are identical, find the difference between the base-emitter voltages of the
two BJTs.

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