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Exp 1 Characteristics of Diode

The document outlines an experiment to study the V-I characteristics of a P-N junction diode under forward and reverse bias conditions. It details the objective, apparatus required, theoretical background, working principles, and procedures for conducting the experiment, including circuit diagrams and observation tables. The experiment aims to illustrate how the diode allows current to flow in one direction while blocking it in the opposite direction.

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Uxama Mughal
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64 views5 pages

Exp 1 Characteristics of Diode

The document outlines an experiment to study the V-I characteristics of a P-N junction diode under forward and reverse bias conditions. It details the objective, apparatus required, theoretical background, working principles, and procedures for conducting the experiment, including circuit diagrams and observation tables. The experiment aims to illustrate how the diode allows current to flow in one direction while blocking it in the opposite direction.

Uploaded by

Uxama Mughal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Experiment No.

01

Study of semiconductor Diode characteristics


1.1: Objective

To observe and draw the Forward and Reverse bias V-I Characteristics
of a P-N Junction diode.

1.2: Apparatus
1. P-N Diode
2. Regulated Power supply
3. Resistor
4. Ammeter
5. Voltmeter
6. Breadboard
7. Connecting wires

1.3: Theory
The semiconductor diode is formed by doping P-type impurity in one side and N-
type of impurity in another side of the semiconductor crystal forming a p-n
Junction as shown in figure 2.1.

Figure 2.1
At the junction initially free charge carriers from both side recombine forming
Negatively charged ions in P side of junction (an atom in P- side accept electron and becomes
negatively charged ion) and positively charged ion on n-side( an atom in n-side accepts
hole i.e. donates electron and becomes positively charged ion)region. This region deplete of
any type of free charge carrier is called as depletion region. Further recombination of free
carrier on both sides is prevented because of the depletion voltage generated due to charge
carriers kept at distance by depletion ( acts as a sort of insulation) layer as shown dotted in the
above figure.

1.3.1: Working principle


When voltage is not applied across the diode, depletion region forms as shown in the above
figure. When the voltage is applied between the two terminals of the diode (anode and
cathode) two possibilities arises depending on polarity of DC supply.

 Forward-Bias Condition: When the +Ve terminal of the batter y is connected to P-type
material & -Ve terminal to N-type terminal as shown in the circuit diagram, the
diode is said to be forward biased. The application of forward bias voltage will force
electrons in N- type and holes in P-type material to recombine with the ions near
boundary and to flow crossing junction. This reduces width of depletion region. This
further will result in increase in majority carrier s flow across the junction. If forward
bias is further increased in magnitude the depletion region width will continue to
decrease, resulting in exponential rise in current as shown in ideal diode characteristic
curve.
 Reverse –biased Condition: If the negative terminal of battery (DC power supply) is
connected with P-type terminal of diode and +Ve terminal of battery connected to N
type then diode is said to be reverse biased. In this condition the free charge carriers (i.e.
electrons in N -type and holes in P-type) will move away from junction widening
depletion region width. The minority carriers (i.e. -Ve electrons in p- type and +Ve
holes in n-type) can cross the depletion region resulting in minority carrier current
flow called as reverse saturation current ( Is) . As no of minority carrier is very
small so the magnitude of few microamperes. Ideally current in reverse bias is zero.In
short current flows through diode in forward bias, and does not flow through diode
in reverse bias. Diode can pass current only in one direction.

1.4: Experiment Procedure


Connect the power supply, voltmeter, current meter with the diode as shown in the figure
1.2 for forward bias diode. You can use two multimeter (one to measure current through diode
and other to measure voltage across diode). Increase voltage from the power supply from
0V to 20V in step as shown in the observation table measure voltage across diode and current
through diode. Note down readings in the observation table Reverse DC power supply polarity
for reverse bias as shown in figure 1.3,Repeat the above procedure for the different values of
supply voltage for reverse bias Draw VI characteristics for forward bias and reverse bias in one
graph. Draw VI characteristics for forward bias and reverse bias in one graph
1.5: Circuit diagram (Forward bias)

Figure 2.2

1.6: Circuit diagram (Reverse Bias)

Figure 2.3

1.7: Observation table: (Forward bias)

Supply Voltage Diode Voltage Diode Current


Sr No. (Volts) (Vd) (Id)

1
2
3
4
5
6
Table 2.1
1.8: Observation table: (Reverse Bias)

Supply Voltage Diode Voltage Diode Current


Sr No. (Volts) (Vd) (Id)

1
2
3
4
5
6
Table 2.2

1.9: Draw V-I characteristics of PN junction diode:

Figure 2.4

POST LAB
Make both circuits on multisim & attach the print out of simulated circuits.
INSTRUCTOR VERIFICATION

Total Marks: ----------------------- Obtained Marks: ----------------

Remarks: --------------------------------------------------------------------------------------------------------
---------------------------------------------------------------------------------------------------------------------
---------------------------------------------------------------------------------------------------------------------
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Instructor Signature: ---------------------------- Date: -------------------------------

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