Lab Manual

BASIC
ELECTRONICS
ENGINEERING

(BE01000111)
Department of Electronics and Communication Engineering
Shree Swami Atmanand Saraswati Institute of Technology
 Shree Swami Atmanand Saraswati Institute of
Technology

CERTIFICATE

This is to certify that

Enrolment No. of B.E 1st year
2nd semester has satisfactorily completed Laboratory
work in subject of “Basic Electronics Engineering”
(BE01000111) during the Academic year 2024-25.

Staff In-Charge Head Of The Department

Date: / /
 SHREE SWAMI ATMANAND SARASWATI INSTITUTE OF TECHNOLOGY

ELECTRONICS AND COMMUNICATION ENGINEERING DEPARTMENT

INDEX
Subject Code: BE01000111 Subject Name: Basic Electronics Engineering
Class: B.E. Sem – 2ND Enrollment No:
Signature of Student: Name of Student:
List of Experiments

Sr. Page
Objective Date Sign
No. No
To observe waveforms on oscilloscope, measure basic parameters
1 amplitude and frequency of sine wave and square wave.

Obtain VI characteristics of semiconductor rectifier diode.

2
Obtain VI characteristics of semiconductor Photo-diode.
3
To design and verify the performance of Zener diode as voltage
4 regulator.

To observe waveform at the output of half wave & Full wave

rectifier with and without filter capacitor. To measure DC voltage,
5
DC current, ripple factor with and without filter capacitor.
To observe waveform at the output of bridge rectifier with and
Without filter capacitor. To measure DC voltage, DC current,
6
Ripple factor with and without filter capacitor.

To construct clipper circuits on breadboard and to observe waveforms

7 at the output of clipper circuits.

To obtain common emitter characteristics of NPN transistor.

8
Study and measure the frequency response of BJT amplifier CE
9 configuration.

To obtain characteristics of field effect transistor (FET).

10

Name of Faculty: Signature of Faculty:

 BASIC ELECTRONICS

EXPERIMENT NO: 1 DATE:

AIM: To observe waveforms on oscilloscope, measure basic parameters amplitude and
frequency of sine wave and square wave.

APPARATUS: CRO, Function generator, Power Supply.

THEORY:

1. CATHOD RAY OSCILLOSCOPE (CRO):

Cathode ray oscilloscope is one of the most useful electronic equipment, which gives a
visual representation of electrical quantities, such as voltage and current waveforms in an electrical
circuit. It utilizes the properties of cathode rays of being deflected by an electric and magnetic
fields and of producing scintillations on a fluorescent screen. Since the inertia of cathode rays is
very small, they are able to follow the alterations of very high frequency fields and thus electron
beam serves as a practically inertia less pointer. When a varying potential difference is established
across two plates between which the beam is passing, it is deflected and moves in accordance with
the variation of potential difference. When this electron beam impinges upon a fluorescent screen,
a bright luminous spot is produced there which shows and follows faithfully the variation of
potential difference.
When an AC voltage is applied to Y-plates, the spot of light moves on the screen vertically
up and down in straight line. This line does not reveal the nature of applied voltage waveform.
Thus to obtain the actual waveform, a time-base circuit is necessary. A time-base circuit is a circuit
which generates a saw-tooth waveform. It causes the spot to move in the horizontal and vertical
direction linearly with time. When the vertical motion of the spot produced by the Y-plates due to
alternating voltage, is superimposed over the horizontal sweep produced by X-plates, the actual
waveform is traced on the screen.

2. FUNCTION GENERATION:

A function generation produces different types of waveforms of adjustable frequency. The

common output waveforms are: sine, square, triangle and saw tooth waves. The frequency may be
adjusted from a fraction of a Hertz to several hundred kilohertz. The various signals available from
the function generation make it a versatile signal source useful for most measurement and
electronics test applications. Its low frequency ranges are particularly well- suited for simulating
mechanical and servo techniques.
Frequencies are read out on a 4 digit LED display with a maximum frequency up to tens
of MHz. Additional quality features include the relatively low distortion factor of the generated
signals and constant amplitude flatness throughout the entire frequency range of the instruments.

3. POWER SUPPLY:

The D.C. power for electronic circuits is most conveniently obtained from commercial a.c
lines by using rectifier-filter system, called a d.c. power supply. When voltage regulating devices
are used with ordinary power supply, it is called regulated d.c. power supply that keeps the d.c.
voltage at fairly constant value. The line regulation of d.c. supply is the fractional change in output

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voltage with respect to change in supply line voltage and load regulation is defined as fractional
change in output voltage with respect to change in load current.
Practically, we use multi-output regulated power supply. This is particularly suitable for
experimental set-ups and circuit development. It provides three output voltages 0 – 30 V, 0 – 5 V
and 0 - ±15 V with current ratings of 2A, 5A and 0.5A max. All outputs are protected against
overload and short circuit by fixed current limiting circuits.

VARIOUS MEASUREMENTS USING CRO:

1. Study of waveforms:

To study the waveforms of an A.C voltage, it is led to the y – plates and the time base
voltage is given to the X-plates. The size of the figure displayed on the screen, can be adjusted
suitably by adjusting the gain controls. The time base frequency can be changed, so as to
accommodate one, two or more cycles of the signal. There is a provision in CRO to obtain a sine
wave or a square wave or a triangular wave.

2. Measurement of D.C.Voltage:

Deflection on a CRO screen is directly proportional to the voltage applied to the deflecting
plates. Therefore, if the screen is first calibrated in terms of known voltage. i.e. the deflection
sensitivity is determined, the direct voltage can be measured by applying it between a pair of
deflecting plates. The amount of deflection so produced multiplied by the deflection sensitivity,
gives the value of direct voltage.

3. Measurement of A.C voltage:

To measure the alternating voltage of sinusoidal waveform, The A.C. signal, from the
signal generator, is applied across the y – plates. The voltage (deflection) sensitivity band switch
(Y-plates) and time base band switch (X-plates) are adjusted such that a steady picture of the
waveform is obtained on the screen. The vertical height (l) i.e. peak-to-peak height is measured.
When this peak-to-peak height (l) is multiplied by the voltage (deflection) sensitivity(n) i.e.
volt/div, we get the peak-to-peak voltage (2Vo). From this we get the
Peak voltage (Vo). The rms voltage Vrms is equal to Vo/ 2. This rms voltage Vrms is
verified with rms voltage value, measured by the multi-meter.

4. Measurement of frequency:

An unknown frequency source (signal generator) is connected to y- plates of CRO. Time

base signal is connected to x – plates (internally connected). We get a sinusoidal wave on the
screen, after the adjustment of voltage sensitivity band switch (Y-plates) and time base band
switch (X-plates). The horizontal length (l) between two successive peaks is noted. When this
horizontal length is multiplied by the time base (m) i.e. sec/div, we get the time-period(T).The
reciprocal of the time-period(1/T) gives the frequency(f). This can be verified with the frequency,
measured by the multi-meter.

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PROCEDURE:

1. Take CRO and connect its supply cord to the power supply and turn itON.
2. By adjusting focus and intensity bring a sharp & bright ground line onCRO screen.
3. Apply sine wave from function generator to either channel X or channelY and properly
ground it to CRO ground.
4. Obtain smooth sine wave on CRO screen and measure its time period and from that
calculate frequency of the same signal.
5. Also measure voltage of same sine wave from CRO screen.
6. Apply different waveforms from function generation and repeat the sameprocedure.

PRECAUTIONS:

1. The continuity of the connecting wires should be tested first.

2. The frequency of the signal generator should be varied such that steadywave form is
formed.

OBSERVATION TABLE:

Sr. Functions Peak to Voltage Peak to Peak Rms

No. (Waves) peak Sensitivity Peak voltage Voltage
length (Volt/Div) Voltage Vp=(Vp2p/2) Vrms=
(Divisions) (y) Vp2p = x*y (volt) (Vp/√2)
(x) (volt) (volt)
1. Sine
2. Square

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Sr. Functions Length of 1 Time- Time- Measured Frequency
No. (Waves) cycle base period frequency on Function
length (Sec/Div) Tp = a*b f = 1/Tp Gen.
(Divisions) (b) (Sec) (Hz) (Hz)
(a)
1. Sine
2. Square

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 2 DATE:

AIM: Obtain VI characteristics of semiconductor rectifier diode.
APPARATUS: Bread board, DC Power supply, Connecting wire, Volt meter, Current
meter, PN junction diode, 1 kΩ Resistor.

THEORY:

P-N JUCTION DIODE

Forward bias

For the forward bias of a P-N junction, P-type is connected to the positive terminal while
the N-type is connected to the negative terminal of a battery. The potential at P-N junction can be
varied with the help of potential divider. At some forward volt1ge (0:3 V for Ge and 0.7 V for Si),
the potential barrier is altogether eliminated and current starts flowing. This voltage is known as
threshold voltage (Vth) or cut-in voltage or knee voltage. It is practically same as barrier voltage
VB, For Vin < Vth, the current flow is negligible. As the forward applied voltage increases beyond
threshold voltage, the forward current rises exponentially as shown in figure. It should be
remembered that if the forward voltage is increased beyond a certain safe value, it produces an
extremely large current which may destroy the junction due to overheating.

Reverse bias

For the reverse bias of P-N junction, P-type is connected to the negative terminal while N-
type is connected to the positive terminal of a battery. The reverse potential at P-N junction can
be varied with the help of potential divider. In this case the junction resistance becomes very high
and practically no current flows through the circuit. However, in practice, a small current of the
order of nA flows in the circuit due to minority carriers. This is known as reverse current. The
reverse current is shown in figure. As the reverse voltage is increased from zero, the reverse current
quickly rises to its maximum or saturation value. The slight increase is due to minority carriers.

CIRCUIT DIAGRAM:

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PROCEDURE:
1. Connect the circuit as shown above diagram for forward & reverse bias.
2. Apply the input voltage form the DC power supply. Vary the inputvoltage and
measure the forward voltage and forward current.

3. Apply the input voltage form the DC power supply. Vary the inputvoltage and
measure the reverse voltage and reverse current.
4. Fill the observation table as given below and plot the graph.

OBSERVATION TABLE:
Forward Bias
Sr. No. Input voltage Forward Voltage Forward Current
Vi (volt) VD (volt) ID (mA)
1
2
3
4
5

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6
7
8
9
10

Reverse Bias

Sr. No. Input Reverse Voltage Reverse Current

voltage
Vi (volt) VR (volt) IR (μA)
1
2
3
4
5
6
7
8
9
10

GRAPH: Draw V-I Characteristics for Forward and Reverse Bias on same graph paper.

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 3 DATE:

AIM: Obtain VI characteristics of semiconductor Photo-diode.
APPARATUS: Bread board, DC Power supply, Connecting wire, Volt meter, Current
meter, Photo diode, 1 kΩ Resistor.

THEORY:

PHOTO DIODE

The semiconductor photodiode is a light detector device which detects presence of light. It is
used to convert optical power into electrical current. PN junction Photo diode have P type and N
type semiconductor forms junction. Thin P type layer is deposited on N type substrate. P-N
junction has a space charge region at the interface of the P and N type material. Light enters
through P-layer as shown in the following figure. This diode has relatively thin depletion region
around the junction. It is reverse biased to increase width of the depletion region. Photons of light
entering in P-layer ionize electron-hole pair. Photon generates electron-hole pair in the depletion
region that moves rapidly with the drift velocity by the electric field.

Fig. PHOTO DIODE

Responsivity is important technical term related to the photodiode. It is ratio of

photocurrent to incident optical power. Responsivity of the photodiode is proportional to width
of the junction. Photo diode is used in fiber optic communication at receiver side. It detects
incoming light from the fiber end and convert it into electrical signal. It can be also used in
remote control receiver.

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CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the power supply, voltmeter, current meter with the photodiode asshown in the
figure.

2. Apply 10V from the DC power supply.

3. Apply AC power to the lamp for light intensity.

4. Vary the distance between the lamp and photo diode.

5. Measure reverse leakage current (photo current) of photodiode for differentlight

intensity.

6. Draw graph of light intensity (distance) versus photocurrent.

OBSERVATION TABLE:.

Bulb Distance=
Bulb Distance= medium Bulb Distance= short
Sr.No. Large
Intensity I1>I Intensity I2>I1>I
Intensity I=0
VR(VOLT) ID(uA) VR(VOLT) ID(uA) VR(VOLT) ID(uA)
1

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3

GRAPH: Draw D-I Characteristics for Forward and Reverse Bias on same graph paper.

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 4 DATE:

AIM: To design and verify the performance of Zener diode as voltage regulator.
APPARATUS: Bread board, DC Power supply, Connecting wire, Volt meter, Current
meter, Zener diode,1 kΩ Resistor.

THEORY:
Forward bias

For the forward bias of a zener diode, P-type is connected to the positive terminal while
the N-type is connected to the negative terminal of a battery. The potential at zener diode can be
varied with the help of potential divider. At some forward volt1ge (0:3 V for Ge and 0.7 V for Si),
the potential barrier is altogether eliminated and current starts flowing. This voltage is known as
threshold voltage (Vth) or cut-in voltage or knee voltage. It is practically same as barrier voltage
VB, For Vin < Vth, the current flow is negligible. As the forward applied voltage increases beyond
threshold voltage, the forward current rises exponentially as shown in figure. It should be
remembered that if the forward voltage is increased beyond a certain safe value, it produces an
extremely large current which may destroy the junction due to overheating.

Reverse bias

For the reverse bias of zener diode, P-type is connected to the negative terminal while N-
type is connected to the positive terminal of a battery. The reverse potential at P-N junction can
be varied with the help of potential divider. In this case there is a strong electric field in the region
of junction (because of heavy doping in P & N regions) which can disrupt the bonding force within
the atom and generate carriers. Because of this phenomenon, when external voltage increases then
the heavy current flows but voltage across diode remains constant. Thus in reverse bias condition,
zener is working as a voltage regulator.

CIRCUIT DIAGRAM:

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PROCEDURE:

1. Connect the circuit as shown above diagram for forward & reverse bias.
2. Apply the input voltage form the DC power supply and measure theforward
voltage and forward current. (Fig. 1)

3. Apply the input voltage form the DC power supply and measure thereverse
voltage and reverse current.(Fig. 2)

4. Fill the observation table as given below and plot the graph.

OBSERVATION TABLE:
Forward Bias
Sr. Input voltage Zener Forward Voltage Zener Forward Current
No. VI (volt) VF (volt) IF (mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10

Reverse Bias
Sr. Input voltage Zener Reverse Voltage Zener Reverse Current
No. VI (volt) VR (volt) IR (mA)
1.

2.

3.

4.

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5.

6.

7.

8.

9.

10

GRAPH: Draw V-I Characteristics for Forward and Reverse Bias on same graph paper.

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 5 DATE:

AIM: To observe waveform at the output of half wave & Full wave rectifier with and without
filter capacitor. To measure DC voltage, DC current, ripple factor with and without filter capacitor.

APPARATUS: Bread board, Connecting wire, 2 No PN Junction diode, 1 kΩ Resistor, Step

down center tap transformer, CRO, CRO Probe, Capacitor 0.01uf.

THEORY:
(A) Half wave rectifier with ‘C’ filter

In positive half cycle of input signal, the diode is forward biased so it works in conduction
state. Thus input signal will appear at output terminals. In negative half cycle of input signal, the
diode is in reverse biased. So current through the load is zero. Hence the output voltage is zero.
Half wave rectifier without filter capacitor convert AC voltage into pulsating DC voltage. Filter
capacitor is used to obtain smooth DC voltage. Construct following circuit to perform this
practical.

CIRCUIT DIAGRAM:

CALCULATION:

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(B) Full wave rectifier with ‘C’ filter

In positive half cycle of input signal, the diode D1 forward biased and diode D2 reverse
biased. So D1 can be replaced by short circuit and D2 can be replaced by open circuit. Here the
output is same as input.
In Negative half cycle of input signal, the diode D1 reverse biased and diode D2 forward
biased. So D1 can be replaced by open circuit and D2 can be replaced by short circuit. For this
case also, the output is same as input. Note that for both the input half cycles, the current through
the load is flowing in the same direction so the output is positive in both the cases. Full wave
rectifier without filter capacitor convert AC voltage into pulsating DC voltage. Filter capacitor is
used to obtain smooth DC voltage. Construct following circuit to perform this practical.

CIRCUIT DIAGRAM:

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CALCULATION:

PROCEDURE:
1. Connect the circuit as shown in Fig.1 for half wave rectifier.

2. Apply the input voltage from mains and observe the input and outputwaveforms.

3. Now connect the capacitor filter across the load and observethe filtered
output waveform.
4. Change the value of capacitor and see the effect on output waveform.

5. Repeat the same procedure for Fig.2 for full wave rectifier.

6. Calculate all the parameters of half wave, full wave rectifier.

GRAPH: Draw the input-output waveforms on graph paper.

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CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 6 DATE:

AIM: To observe waveform at the output of bridge rectifier with and without filter capacitor. To
measure DC voltage, DC current, ripple factor with and without filter capacitor.

APPARATUS: Bread board, Connecting wire, 4 No PN Junction diode, 1 kΩ Resistor, Step

down center tap transformer, CRO, CRO Probe, Capacitor 0.01uf.

THEORY:

Full wave Bridge rectifier with ‘C’ filter

In positive half cycle of input signal, the diodeD1 and D3 are forward biased and diode D2
and D4 are reverse biased. So D1 and D3 can be replaced by short circuit and D2 and D4 can be
replaced by open circuit. Here the output is same as input.
In positive half cycle of input signal, the diode D1 and D3 are reverse biased and diode D2
and D4 are forward biased. So D1 and D3 can be replaced by open circuit and D2 and D4 can be
replaced by short circuit. For this case also, the output is same as input. Note that for both the input
half cycles, the current through the load is flowing in the same direction so the output is positive
in both the cases. Full wave rectifier without filter capacitor convert AC voltage into pulsating DC
voltage. Filter capacitor is used to obtain smooth DC voltage. Construct following circuit to
perform this practical.

CIRCUIT DIAGRAM:

CALCULATION:

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PROCEDURE:
1. Connect the circuit as shown in Fig. for full wave Bridge rectifier.

2. Apply the input voltage from mains and observe the input and outputwaveforms.

3. Now connect the capacitor filter across the load and observethe filtered
output waveform.
4. Change the value of capacitor and see the effect on output waveform.

5. Calculate all the parameters of bridge rectifier.

GRAPH: Draw the input-output waveforms on graph paper

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 7 DATE:

AIM: To construct clipper circuits on breadboard and to observe waveforms at the output of
clipper circuits.

APPARATUS: Bread board, Connecting wire, 2 No PN Junction diode, 1 kΩ Resistor, CRO,

CRO Probe, DC Power supply, Function Generator.

THEORY:
Clipper Circuits. Clipping circuits. A clipper is a device which limits, remove orprevents
some portion of the wave form (input signal voltage) above or below a certain level In other words
the circuit which limits positive or negative amplitude ,or both is called chipping circuit.

1. Positive Clipper
2. Negative Clipper
3. Positive Clipper with Bias
4. Negative Clipper with Bias
5. Combinational Diode Clipper
Positive Clipper

The Clipper which removes the positive half cycle of the input is known as positive clipper.

When Vin ≥ Vref. : The diode is ON so Vout = Vref. (constant)

When Vin ≤ Vref. : The diode is OFF so Vout = Vin

Negative Clipper

The Clipper which removes the negative half cycle of the input is known as negative
clipper.
When Vin ≥ (-Vref.) : The diode is OFF so Vout = Vin

When Vin ≤ (-Vref.) : The diode is ON so Vout = -Vref. (constant)

Combination Clipper
Note: (Vref1 > Vref2) & Vref1/Vref2= 0 to 5V.
When Vin ≥ Vref1 :The diode D1 is ON & D2 is OFF so Vout = + Vref1
(constant)

When Vref1 ≥ Vin ≥ (-Vref2) : The diode D1 is OFF & D2 is OFF so Vout = Vin

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When Vin ≤ (-Vref2) : The diode D1 is OFF & D2 is ON so Vout = -Vref2

(constant)

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit of positive clipper as shown in Fig.

2. Apply 1 KHz, 10V P-P input signal from Function generator.

3.Observe the input & Output Waveforms. Repeat the same procedure for the
Negative and Combinational Clipper circuits.

GRAPH: Draw the input-output waveforms on graph paper.

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 8 DATE:

AIM: To obtain common emitter characteristics of NPN transistor.

APPARATUS: BC 547 Transistor, 1M ohm resistor,1 k ohm resistor, DCPower

supply, A-meters, Volt meters.

THEORY:

Transistor is a three terminal, bipolar, current controlled semiconductor device. In this

configuration, the input signal is applied between base and emitter and the output is taken from
collector and emitter. As emitter is common to the input and output circuits, hence the name
common emitter configuration. In the circuit, the battery VBB provides forward bias to emitter-
base junction and VCC provides reverse bias to collector-emitter junction.

Input Characteristics

The curve between base current IB and base-emitter voltage VBE at constant collector-
emitter voltage VCE represents the input characteristics. For fixed VCE, as VBE increases the IB
increases exponentially. The curve is same as diode characteristics. Also as VCE increases,
because of the base width modulation, the curve departs from the original curve.

Output Characteristics

The curve between collector current IC and collector-emitter voltage VCE at constant base
current IB represents the output characteristics. Transistor works in different regions: Active,
Cutoff and Saturation.

Active Region

(Emitter junction forward biased and collector junction reverse biased)

The collector current is essentially independent of collector voltage VCB but depends only
on emitter current IE. As VCE increases, Ic increases rapidly as β is greater than unity.

Saturation Region

(Both emitter junction and collector junction are forward biased)

The small change in value of VCE produces large change in IC.

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Cutoff Region

(Both emitter junction and collector junction are reverse biased)

A small amount of collector current floes even when IB=0.This is the collector
leakage current ICEO.

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in figure.
2. Keep the Voltage VCE constant by setting VCC.
3. Vary the voltage VBB and measure the voltage VBE and current IB.
4. Repeat the above procedure for different values of VCE.

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5. Now keep the current IB constant by setting VBB.
6. Vary the voltage VCC and measure the voltage VCE and current IC. Repeatthe above
procedure for different values of IB.
7. Draw the graphs for input and output characteristics.

OBSERVATION TABLE:
Input Characteristics

VCE = VCE = VCE =

VBE IB VBE IB VBE IB

(Volts) (µA) (Volts) (µA) (Volts) (µA)

Output Characteristics
IB = IB = IB =
VCE IC VCE IC VCE IC
(Volts) (mA) (Volts) (mA) (Volts) (mA)

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GRAPH:
1. Plot IB verses VBE for different values of VCE.
2. Plot IC verses VCE for different values of IB.

CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 9 DATE:

AIM: Study and measure the frequency response of BJT amplifier CEconfiguration.

APPARATUS: Bread Board, Electronics Component, Function Generator, CRO,

Connecting wires.

CIRCUIT DIAGRAM:

THEORY:

This is most popular type of coupling as it provides excellent audio fidelity. A coupling
capacitor is used to connect output of first stage to input of second stage. Resistances R1, R2,
Reform biasing and stabilization network. Emitter bypass capacitor offers low reactance paths to
signal coupling Capacitor transmits ac signal, blocks DC.
When ac signal is applied to the base of the transistor, its amplified output appears across
the collector resistor Rc. It is given to the second stage for Further amplification and signal appears
with more strength. Frequency response curve is obtained by plotting a graph between frequency
and gain in db .The gain is constant in mid frequency range and gain decreases on both sides of
the mid frequency range. The gain decreases in the low frequency range due to coupling capacitor
Cc and at high frequencies due to junction capacitance Cbe.

PROCEDURE:

1) Apply input by using function generator to the circuit.

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2) Observe the output waveform on CRO.

3) Measure the voltage at output.

4) From the readings calculate voltage gain.

5) Note down various values of gain for different frequencies.

6) A graph is plotted between frequency and voltage gain.

OBSERVATIONS:

Applied Input Voltage Vi = .

SR APPLIED OUTPUT VOLTAGE GAIN

NO. FREQUENCY (fin) VOLTAGE (20 log10 (V0/Vi)) dB
(V0)

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CALCULATIONS:

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CONCLUSION:

SIGNATURE

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EXPERIMENT NO.: 10 DATE:

AIM: To obtain characteristics of field effect transistor (FET).

APPARATUS: BFW10 JFET, 1M ohm resistor, 1 k ohm resistor, DC Power supply, A-

meters, Volt meters.

THEORY:
Field effect transistor or FET is a transistor, where output current is controlled by electric
field. FET sometimes, is called uni-polar transistor as it involves single carrier type operation. The
basic types of FET transistor is completely different from BJT transistor basics. FET is three
terminal semiconductor devices, with source, drain and gate terminals.
The charge carries are electrons or holes, which flow from the source to drain though an
active channel. This flow of electrons from source to drain is controlled by voltage applied across
the gate and source terminals.

Types of FET Transistor

FETs are of two types- JFETs or MOSFETs.

Junction FET
The Junction FET transistor is a type of field effect transistor that can be used as an
electrically controlled switch. The electric energy flows through an active channel between
sources to drain terminals. By applying a reverse bias voltage to gate terminal, the channel is
strained so the electric current is switched off completely.

The junction FET transistor is available in two polarities which are:

N- Channel JFET
N channel JFET consists of an n type bar at the sides of which two p type layers are doped.
The channel of electrons constitutes the N channel for the device. Two ohmic contacts are made
at both ends of the N-channel device, which are connected together to form the gate terminal.The
N channel JFET has greater conductivity than the P channel JFET. So the N channel JFET is more
efficient conductor compared to P channel JFET.

P-Channel JFET
P channel JFET consists of a P type bar, at two sides of which n type layers are doped. The
gate terminal is formed by joining the ohmic contacts at both the sides. Like in an N channel JFET,

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the source and drain terminals are taken from the other two sides of the bar. A P type channel,
consisting of holes as charge carriers, is formed between source and drain terminal.

Characteristics of p channel Junction FET Transistor

Given below is characteristic curve of p channel Junction Field Effect transistor and different
modes of operation of the transistor.

Fig. Characteristics of p channel junction FET transistor

Cutoff region:
When the voltage applied to the gate terminal is enough positive for the channel width to be
minimum, no current flows. This causes the device to be in cut off region.

Ohmic region:
The current flowing through the device is linearly proportional to the applied voltage until a
breakdown voltage is reached. In this region, the transistor shows some resistance to the flow of
current.

Saturation region:
When the drain source voltage reaches a value such that the current flowing through the device is
constant with the drain source voltage and varies only with the gate source voltage, the device is
said to be in saturation region.

Break down region:

When the drain source voltage reaches a value which causes the depletion region to break down,
causing an abrupt increase in the drain current, the device is said to be in breakdown region. This
breakdown region is reached earlier for lower value of drain source voltage when gate source
voltage is more positive.

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CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in figure.
2. Keep the Voltage VDS constant.
3. Vary the voltage VGS and measure the current ID
4. Repeat the above procedure for different values of VDS.
5. Now keep the voltage VGS constant.
6. Vary the voltage VDS and measure the current ID.
7. Repeat the above procedure for different values of VGS.8. Draw
the graphs for input and output characteristics.

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OBSERVATION TABLE:
Transfer Characteristics

VDS = VDS = VDS =

VGS ID VGS ID VGS ID
(Volts) (mA) (Volts) (mA) (Volts) (mA)

Output Characteristics

VGS = VGS = VGS =

VDS ID VDS ID VDS ID
(Volts) (mA) (Volts) (mA) (Volts) (mA)

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GRAPH:
1. Plot ID verses VGS for different values of VDS.

2. Plot ID verses VDS for different values of VGS.

CONCLUSION:

SIGNATURE

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