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The document outlines an assignment for a Bachelor of Science in Electrical and Electronic Engineering course, focusing on MOSFET technology and digital electronic design. It includes tasks such as explaining key concepts, calculating threshold voltage, and analyzing a resistive converter design problem. Additionally, it provides formulas for MOSFET currents and logic levels for circuit analysis.

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stanley.mwangemi
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4 views

Assignment1

The document outlines an assignment for a Bachelor of Science in Electrical and Electronic Engineering course, focusing on MOSFET technology and digital electronic design. It includes tasks such as explaining key concepts, calculating threshold voltage, and analyzing a resistive converter design problem. Additionally, it provides formulas for MOSFET currents and logic levels for circuit analysis.

Uploaded by

stanley.mwangemi
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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School of Computing and Engineering Sciences

Bachelor of Science in Electrical and Electronic Engineering

BEE4221: DIGITAL ELECTRONIC DESIGN ASSIGNMENT 1

1. Explain each of the following as used in MOSFET technology


a) Scaling
b) Technology node
2. Consider a MOS system with the following parameters
𝑡𝑜𝑥 = 200𝐴̇
𝜙𝐺𝐶 = −0.85𝑉
𝑁𝐴 = 2 × 1015 𝑐𝑚−3
𝑄0𝑥 = 𝑞2 × 1011 𝑐/𝑐𝑚2

Determine the threshold voltage 𝑉𝑇0 under zero bias at room temperature (𝑇 = 300𝐾).
Note that 𝜀0𝑥 = 3.97𝜀0 𝜀𝑠𝑖 = 11.7𝜀0

3. In a resistive converter design problem the following data are provided

𝟓𝑽
𝑽𝑫𝑫
𝟑𝟎𝝁𝑨/𝑽𝟐
𝒌,𝒏
𝟏𝑽
𝑽𝑻𝟎

𝑊
It is required to have to have a 𝑉𝑂𝐿 = 0.2𝑉. Determine the possible ( ) ratio of the
𝐿

driver transistor and the value of 𝑅𝐿 that achieve the required 𝑉𝑂𝐿 if the following
parameters are to be optimized:

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a) power dissipated
b) area occupied by the circuit
4. Consider a resistive –load inverter circuit with 𝑉𝐷𝐷 = 5𝑉, 𝑘𝑛, = 20 𝜇𝐴/𝑉 2 ,𝑉𝑇0 = 0.8 𝑉
𝑊
𝑅𝐿 = 200 𝑘Ω and ( ) = 2. Calculate the critical voltages 𝑉𝑂𝐿 , 𝑉𝑂𝐻 , 𝑉𝐼𝐿 , 𝑉𝐼𝐻 ) on the
𝐿

VTC and find the noise margin of the circuit.

Formula sheet

MOSFET CURRENTS
𝑘𝑛′ 𝑊𝑉𝑜𝑣 𝑉𝐷𝑆 𝑓𝑜𝑟 𝑠𝑚𝑎𝑙𝑙 𝑉𝐷𝑆
𝐼𝐷 =
𝐿
𝑉𝐷𝑆 𝑎𝑠 𝑉𝐷𝑆 𝑖𝑛𝑐𝑟𝑒𝑎𝑠𝑒𝑠 𝑉𝐷𝑆
𝑘𝑛′ 𝑊 (𝑉𝑜𝑣 − ) 𝑉𝐷𝑆
𝐼𝐷 = 2 < 𝑉𝐺𝑆
𝐿 − 𝑉𝑇 𝑙𝑖𝑛𝑒𝑎𝑟 𝑟𝑒𝑔𝑖𝑜𝑛
𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑇 )2 𝑉𝐷𝑆
𝐼𝐷 = ≥ 𝑉𝐺𝑆
2
𝑘𝑛, 𝑊 − 𝑉𝑇 𝑠𝑎𝑡𝑢𝑟𝑎𝑡𝑖𝑜𝑛 𝑟𝑒𝑔𝑖𝑜𝑛
𝐼𝐷 =
𝐿
RATIONED LOGIC
𝑽𝑶𝑯 = 𝑽𝑫𝑫

𝟏
𝑽𝑰𝑳 = 𝑽𝑻𝑶 +
𝒌𝒏 𝑹𝑳

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