STP3NA100

STP3NA100FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
STP3NA100 1000 V <5 Ω 3.5 A
STP3NA100FI 1000 V <5Ω 2A
■ TYPICAL RDS(on) = 4.3 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED 3 3
2 2
■ REDUCED THRESHOLD VOLTAGE SPREAD 1 1

TO-220 TO-220FI
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP3NA100 STP3NA100FI
V DS Drain-source Voltage (V GS = 0) 1000 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 1000 V
V GS Gate-source Voltage ± 30 V
o
ID Drain Current (continuous) at T c = 25 C 3.5 2.0 A
ID Drain Current (continuous) at T c = 100 o C 2.0 1.2 A
IDM (•) Drain Current (pulsed) 14 14 A
P tot Total Dissipation at T c = 25 o C 110 45 W
Derating Factor 0.88 0.36 W/ o C
V ISO Insulation Withstand Voltage (DC)  2000 V
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
(•) Pulse width limited by safe operating area
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STP3NA100/FI

THERMAL DATA

TO-220 ISOWATT220
o
R thj-case Thermal Resistance Junction-case Max 1.14 2.78 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc-sink Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 3.5 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 170 mJ
(starting T j = 25 o C, I D = I AR , VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V (BR)DSS Drain-source I D = 250 µA VGS = 0 1000 V
Breakdown Voltage
I DSS Zero Gate Voltage V DS = Max Rating 25 µA
Drain Current (V GS = 0) V DS = Max Rating T c = 125 o C 250 µA
I GSS Gate-body Leakage V GS = ± 30 V ± 100 nA
Current (V DS = 0)

ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V GS(th) Gate Threshold V DS = VGS ID = 250 µA 2.25 3 3.75 V
Voltage
R DS(on) Static Drain-source On V GS = 10V I D = 1.5 A 4.3 5 Ω
Resistance
ID(on) On State Drain Current V DS > I D(on) x R DS(on)max 3.5 A
V GS = 10 V

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g fs (∗) Forward V DS > I D(on) x R DS(on)max I D = 1.5 A 1.5 3 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 1100 1430 pF
C oss Output Capacitance 85 110 pF
C rss Reverse Transfer 20 30 pF
Capacitance

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 STP3NA100/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 500 V I D = 1.7 A 20 27 ns
tr Rise Time R G = 4.7 Ω V GS = 10 V 27 35 ns
Qg Total Gate Charge V DD = 800 V I D = 3.5 A V GS = 10 V 48 65 nC
Q gs Gate-Source Charge 8 nC
Q gd Gate-Drain Charge 23 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t r(Voff) Off-voltage Rise Time V DD = 800 V I D = 3.5 A 62 85 ns
tf Fall Time R G = 47 Ω V GS = 10 V 22 30 ns
tc Cross-over Time (see test circuit, figure 5) 95 125 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I SD Source-drain Current 3.5 A
I SDM (•) Source-drain Current 14 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 3.5 A V GS = 0 1.6 V
t rr Reverse Recovery I SD = 3.5 A di/dt = 100 A/µs 1000 ns
o
Time V DD = 100 V T j = 150 C
Q rr Reverse Recovery (see circuit, figure 5) 15 µC
Charge
I RRM Reverse Recovery 35 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

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STP3NA100/FI

Thermal Impedance for TO-220 Thermal Impedance forTO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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 STP3NA100/FI

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature

Temperature

Source-drain Diode Forward Characteristics

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STP3NA100/FI

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STP3NA100/FI

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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STP3NA100/FI

ISOWATT220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
G1

G
H

F2

1 2 3
L2 L4
P011G

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 STP3NA100/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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