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Tutorial 5

The document outlines a tutorial for EE542L focusing on the physics and modeling of semiconductor devices, covering topics such as the density of states effective mass for silicon, carrier distributions in degenerate semiconductors, and calculations of electron and hole concentrations under various doping conditions. It also includes tasks related to energy band diagrams and the derivation of density of states expressions for 2D solids. The tutorial emphasizes understanding the relationships between effective mass and bandstructure effective mass for different materials.

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2 views

Tutorial 5

The document outlines a tutorial for EE542L focusing on the physics and modeling of semiconductor devices, covering topics such as the density of states effective mass for silicon, carrier distributions in degenerate semiconductors, and calculations of electron and hole concentrations under various doping conditions. It also includes tasks related to energy band diagrams and the derivation of density of states expressions for 2D solids. The tutorial emphasizes understanding the relationships between effective mass and bandstructure effective mass for different materials.

Uploaded by

akhila
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE542L: Physics and Modeling of Semiconductor Devices

Tutorial 5
1) For Si, assume that the density of states effective mass does not change with temperature and can be
given for electrons by 𝑚𝑛∗ = 1.182 𝑚𝑜 and for holes by 𝑚𝑝∗ = 0.81 𝑚𝑜 . Plot the graph of ni vs T.

2) The carrier distributions or number of electrons as a function of energy in the conduction band was
noted to peak at an energy very close to the conduction band edge. Taking the semiconductor to be
degenerate, determine the precise energy relative to conduction band edge where the electron
distribution peaks.
3) Si is doped with Phosphorous with ND = 1E15 cm-3 >> NA. Calculate n/ND for temperatures T = 25K,
50K, 75K and 100K. Assume gd = 2 and EC – ED = 0.045eV. Compare your results with the graph given
in the book.
4) Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si
under the following conditions:
(i) T = 300K, NA << ND, ND = 1E14 cm-3.
(ii) T = 300K, NA = 1E15 cm-3, ND << NA.
(iii) T = 300K, NA = 1E15 cm-3, ND = 1E16 cm-3.
(iv) NA = 0, ND = 1E14 cm-3 for T = 1970C and 3720C.
For each of these cases, find out EF-Ei and draw a carefully dimensioned energy band diagram

5) For the energy band diagram shown below:

i) Sketch the electrostatic potential & electric field inside the semiconductor as a function of x
ii) The carrier pictured on the diagram moves back & forth between x=0 and x=L without changing its
total energy. Sketch the kinetic energy and potential energy as a function of position inside the
semiconductor. Take EF to be the energy reference level
iii) Roughly sketch n & p versus x
iv) Is the semiconductor degenerate at any point? If so, where?

6) Density of states expression was derived in the class for a 3D solid. Along similar lines, derive the
expression of density of states for a 2D solid.

7) The relationship between the density of states effect mass and the bandstructure effective mass for
GaAs, Ge and Si has been derived in the book. Go through the exercise and make sure you understand
it.

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