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Ele 307 Tutorial 1

The document is a tutorial set for ELE 307, containing various problems related to transistor circuits, including calculations for resistances, currents, and voltages in active regions. It includes tasks such as finding base and collector currents, plotting characteristics, and determining Q-points. Additionally, it addresses scenarios involving silicon transistors with specified parameters and conditions.

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samuelodeyemi3000
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10 views3 pages

Ele 307 Tutorial 1

The document is a tutorial set for ELE 307, containing various problems related to transistor circuits, including calculations for resistances, currents, and voltages in active regions. It includes tasks such as finding base and collector currents, plotting characteristics, and determining Q-points. Additionally, it addresses scenarios involving silicon transistors with specified parameters and conditions.

Uploaded by

samuelodeyemi3000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ELE 307 TUTORIAL SET 1

1. In the circuit shown below, 𝑉𝐶𝐶 = 24𝑉, 𝑅𝐶 = 10𝑘Ω 𝑎𝑛𝑑 𝑅𝐸 = 270Ω. If a silicon
transistor with 𝛽 = 45 is used and if 𝑉𝐶𝐸 = 5𝑉, find R. Neglect the reverse
saturation current.

2. For the transistor circuit shown below, transistor 𝑄1 𝑎𝑛𝑑 𝑄2 operate in the active
region with 𝑉𝐵𝐸1 = 𝑉𝐵𝐸2 = 0.7𝑉, 𝛽1 = 100 𝑎𝑛𝑑 𝛽2 = 50. The reverse saturation
current may be neglected. Find
(a) 𝐼𝐵2 , 𝐼1 , 𝐼2 , 𝐼𝐶2 , 𝐼𝐵1 , 𝐼𝐶1 , 𝑎𝑛𝑑 𝐼𝐸1
(b) The voltages 𝑉𝑜1 𝑎𝑛𝑑 𝑉𝑜2.

3. For the circuit shown below, 𝛽 = 100. Find


(a) If the silicon transistor is in cut-off, saturation or in the active region.
(b) 𝑉0
(c) The minimum value of 𝑅𝐸 for which the transistor operates in the active region.
[Take 𝑉𝐵𝐸 = 0.7𝑉, 𝑉𝐵𝐸𝑠𝑎𝑡 = 0.8𝑉 𝑎𝑛𝑑 𝑉𝐶𝐸𝑠𝑎 = 0.2𝑉].
4. The IC-VCE characteristics of a transistor are as shown in the Table below:

VCE IB
1 4 8 10
(V) (μA)
3.0 3.1 3.3 3.4 20
6.8 7.5 8.4 8.9 40
10.8 11.9 13.1 13.9 60
14.5 15.9 17.8 18.8 80
IC 18.6 20.8 23.3 24.8 100
(mA) 22.9 25.2 28.7 30.2 120
26.0 29.0 33.0 35.0 140
29.1 32.9 37.8 40.1 160
32.5 36.7 42.0 44.7 180
36.0 40.5 46.5 49.5 200

(a) Plot the characteristics and draw the curve representing a dissipation of
100mW in the transistor.
(b) Find the lowest value of the collector load resistor (RC) which may be used
with a collector supply voltage (VCC) of 10 V if the dissipation in the transistor
is not to exceed 100 mW for any value of base current.
(c) Determine the value of base current required with the value of the collector
load resistor in (b) above to set the collector-emitter voltage (VCE) to 5 V.
(d) Estimate the dc current gain at the operating point in (c) above.

5. Determine the Q-points in the circuits shown below if |𝑉𝐵𝐸 | = 0.7 𝑉 and 𝛽 = 100.
6. (a) If 𝛼 = 0.98 and 𝑉𝐵𝐸 = 0.7 𝑉, find the value of 𝑅1 in the circuit shown below for
an emitter current of 2 mA.

(b) With the value of 𝑅1 in (a) above, determine the new value of the emitter
current if the 20-𝑘Ω resistor becomes open-circuited.

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