Birla Institute of Technology and Science – Pilani, Hyderabad Campus

First Semester 2022-2023

ECE/EEE/INSTR F214 – Electronic Devices Comprehensive (Closed Book)
Time: 9:30 AM -12:30 PM Date: 30th December 2022 Total Marks: 80

Name: ID:

PART-A (Objective Types) Max. Marks: 30

Students guilty of taking any unfair means during the examination will be referred to the appropriate
disciplinary authorities.

The rough work should be done in the supplementary/main sheet provided during examination, and
both of these sheets will be non-evaluative.

Instructions Part-A:
1. Q1-6 carries 3 marks, and Q7-12 carries 2 marks with 50% negative marking for wrong answer
2. The right option (in capital letter only, for Example- A or B etc.) should be written in the text box
beside each questions
3. No other form of answers will be considered, answer written in pencil will not be considered
4. For lack of clarity/overwriting in written option, the answer will be treated as wrong answer
5. For numerical problems, consider nearest possible values given in the options

Q1. Consider a p+-n Si junction at T = 300 K with NA = 1018 cm3 and ND = 1016 cm3, and ni = 1.5×1010
cm-3. The minority carrier hole diffusion constant is Dp = 12 cm2/s and the minority carrier hole lifetime
is tp = 100 ns. The cross-sectional area of the junction is A = 10-4 cm2. Calculate the magnitude of reverse
saturation current Is = A.Js. [M3]

A. 1.327×10-12 Amp
Answer.
B. 7.898×10-11 Amp
C. 3.949×10-15 Amp
D. 1.327×10-16 Amp
E. 4.268×10-14 Amp

Q2. An abrupt Germanium (ni= 1013 cm-3, ε=16.2 at T= 500 K) p-n junction has the following hole density
profile (in cm-3). Calculate the potential drop at T= 500 K in the depletion region when a voltage of 0.45
V is applied in region1 and region 2.- [M3]

A. 0.345 V
Answer.
B. 0.927 V
C. 1.245 V
D. 0.795 V
E. 1.085 V

Q3. A Si sample is doped with 1015 Phosphorus atoms/cm3. At 300K, calculate the electron and hole
concentrations per cm3 and the position of the Fermi level with reference to conduction band edge in eV
(use Eg = 1.1 eV, ni = 1.5 × 1010 /cm3) [M3]
A. no = 1015 cm-3, po = 2.25×105 cm-3, 0.576 eV Answer.
B. no = 2.25×1015 cm-3, po = 105 cm-3, 0.261 eV
C. no = 105 cm-3, po = 2.25 × 1015 cm-3, 0.261 eV
D. no = 1015 cm-3, po = 2.25 × 1010 cm-3, 0.576 eV
E. no = 1015 cm-3, po = 2.25 × 105 cm-3, 0.261 eV

Q4. The resistivity of a uniformly doped n-type silicon sample is 0.5 Ω-cm. If the electron mobility (µn)
is 125 cm2/V-s, the donor impurity concentration ND is [M3]

A. 2.5×1017 /cm3
Answer.
B. 1017 /cm3
C. 2.5×1016 /cm3
D. 1016 /cm3
E. 2.5×1015 /cm3

Q5. Consider a Silicon p-n junction at room temperature with ND = 2×1015 cm-3 and NA = 2×1016 cm-3.
The ni = 1.5×1010 cm-3. If the junction is reverse-biased with Va = -10V. Permittivity of free space =
8.85×10-14 F.cm-1, and Dielectric constant of silicon = 12. Determine the percent change in junction
depletion width if the doping in the p region is increased by a factor of 2. [M3]

A. 2.27% Answer.
B. 3.26 %
C. 4.95 %
D. 1.14 %
E. 5.62 %

Q6. A sample of silicon (bandgap 1.12 eV @ 300K) at T = 450 K is doped with boron at a concentration
of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8×1014 cm-3. The holes and electrons
concentration of the material is, respectively (NC: 2.8×1019/cm3 and NV: 1.04×1019/cm3, both at 300 K)
[M3]

A. p0 = 4.23×1011 cm-3, n0 = 3×1016 cm-3

Answer.
B. p0 = 4.23×1016 cm-3, n0 = 7×1011 cm-3
C. p0 = 7×1014 cm-3, n0 = 4.23×1011 cm-3
D. p0 = 4.23×1014 cm-3, n0 = 7×1011 cm-3
E. p0 = 7×1014 cm-3, n0 = 3×1016 cm-3
F. p0 = 7×1014 cm-3, n0 = 4.23×1016 cm-3

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Q7. MOS devices are scaled to smaller dimensions. As the gate oxide thickness increases, what will
happen to the pinch-off voltage? What must be done to the channel doping to maintain the same VT?
[M2]

A. Pinch-off Voltage Decreases & Doping must be increased Answer.

B. Pinch-off Voltage Increases & Doping must be decreased
C. Pinch-off Voltage Decreases & Doping must be decreased
D. Pinch-off Voltage Increases & Doping must be increased
E. Pinch-off Voltage Decreases & Doping must be kept unaltered
Q8. For the MOS CAP shown alongside, what type of charge density exist in the insulator region and
also what polarity of voltage needs to be applied to gate (metal) to make the bands flat? [M2]

A. Positive Charge, +Ve voltage

B. Positive Charge, -Ve voltage Answer.
C. Negative Charge, +Ve voltage
D. Negative Charge, -Ve voltage
E. None of the Above

Q9. The complete depletion approximation in p-n junction is used –? [M2]

A. To determine the space charge density at equilibrium

Answer.
B. To determine the forward bias maximum electric field
C. To determine the reverse bias current
D. Both (B) and (C)
E. Both (A) and (C)
F. Both (A) and (B)

Q10. The Drain Induced Barrier Lowering does which of the following –? [M2]

A. Increases the off-state current

Answer.
B. Increases the on-state current
C. Increases the threshold voltage
D. Both (B) and (C)
E. Both (A) and (C)
F. Both (A) and (B)

Q11. The small signal gate capacitance will be almost equal to oxide capacitance at- [M2]

A. Accumulation condition
Answer.
B. Weak-inversion condition
C. Depletion condition
D. Flat-band condition
E. None of the Above

Q12. In a Metal-Oxide-Semiconductor (p-type) structure, the doping of the semiconductor significantly

influences the overall gate capacitance when- [M2]

A. A positive oxide charge density is present with large positive gate bias Answer.
B. A negative oxide charge density is present with large negative gate bias
C. Negligible oxide charge density is present with large negative gate bias
D. Negligible oxide charge density is present with large positive gate bias
E. None of the Above

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PART-B (Fill in the Blanks) Max. Marks: 50

Instructions Part-B:
1. No negative marking
2. The right answer should be written in the text box beside each question in the specified units only,
3. No other form of answers will be considered, answer written in pencil will not be considered
4. For lack of clarity/overwriting in the written option, the answer will be treated as the wrong
answer

Q13. Consider the energy band diagram of isolated systems of materials shown below. For the
semiconductor, effective masses at conduction band and valance band are equal and the Fermi potential
is 0.30V. In the limiting case of insulator thickness tox 0, the materials are brought into contact with
each other and equilibrium is set-up. The electrostatic potential drop across the semiconductor is found
to be 0.5 V. (Consider there are no image force induced barrier lowering effects)

Find out:

(1) Electron Affinity of the Semiconductor when 1.0 V bias applied at metal contact (in eV only) [M5]

Answer.

(2) Energy barrier height for holes at -2.0 V bias applied at metal contact (in eV only) [M5]

Answer.

Q14. Consider the energy band diagram of isolated systems of materials shown below. The materials are
brought into contact with each other and equilibrium is set-up.
Find out:

(1) Valence band discontinuity at the junction interface (in eV only) [M5]

Answer.

(2) Built-in potential across the junction (in V only) [M5]

Answer.

Q15. A Si (ni = 1010 cm-3 at 300K) p-n junction at equilibrium has minority electron and hole
concentrations of 1 × 105 cm−3 and 1 × 106 cm−3, respectively at room temperature. If the doping in the p
region is increased by a factor of 5 and the total depletion region width is kept constant, then

Find out:

(1) Percent change in total built-in potential (in % only) [M5]

Answer.

(2) Percent change in depletion layer width in n-side (in % only) [M5]

Answer.

Q16. Consider a Si n-MOSFET under the following operating condition: – The MOSFET has channel
length of 20 nm, width of 1 µm and SiO2 (k=3.9) thickness of 4 nm. The threshold voltage is 0.2 V and
the maximum supply voltage is 0.6 V. The permittivity of free space is 8.85 ×10-14 F/cm.
 Find out the saturation on-set bias (in V only) VDS_SAT in the MOSFET. [M5]

Answer.

Q17. Determine the temperature (in Kelvin only) at which there is one in a million chance that an energy
state 0.55 eV above the Fermi energy level is occupied by an electron. [M5]

Answer.

Q18. Calculate the hole concentration (in cm-3 only) in Si when the conductivity is minimum. Given μn
= 1350 cm2/V.sec, μp = 450 cm2/V.sec, ni = 1.5 × 1010 /cm3. [M5]

Answer.

Q19. A sample of Ge is doped to the extent of 1014 donor atoms/cm3 and 7 × 1013 acceptor atoms/cm3.
The resistivity of pure Ge sample is 60 Ω.cm. If the total conduction current density is 52.3 mA/cm3, find
the applied electric field (in V/cm only). Given μp = 1800 cm2/V.sec, μn = 3800 cm2/V.sec. [M5]

Answer.

Standard Values:

Take q = 1.6 × 10−19 C, ε0 = 8.854 × 10-12 F/m, KT/q = 0.0259 V @ T= 300K

εSi = 11.7× ε0, εSiO2 = 3.9× ε0
 Formula Sheet:

FD distribution: Conductivity:

For parabolic band approximations: and

Density of States: and

Charge Concentrations: and

and

Diffusion Current Density: and

Drift Current Density: and

Diffusion Coefficients: Mobility:

PN junction:

 Dp D 
I  qA pn  n n p (e qV / kT  1)  I o (e qV / kT  1)
L Ln 
Current:  p
...........(15)

Built-in Potential: Max Equilibrium Electric Field:

Equilibrium Depletion Width: Charge neutrality condition:

MOS-CAP:

Flat Band Potential: VFB = (φm – φs) - Qox/Cox

Gate Oxide (Insulator) Capacitance:

Cox = A (ꜫox/tox)

Depletion Layer thickness:

Surface Potential @ inversion on-set:

Capacitance (@ Depletion/Inversion):

Semiconductor Capacitance (@ Depletion):

Threshold Voltage:

MOSFET:

MOSFET Current (VG>VT @ Linear):

MOSFET Current (VG>VT @ Linear):

Channel Inversion Charge:

Metal/Semiconductor Junction:

Schottky Barrier (Metal/n-semi’):

Schottky Barrier (Metal/p-semi’):